1
Electron Microscopy
Jin Zou (邹进)
School of Engineering and Centre for
Microscopy and Microanalysis
The University of Queensland, Australia
Email: j.zou@uq.edu.au
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Light Microscopes
Compound Stereo
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Comparison of Resolution
Optical image SEM image
25 µm
SEM image has much better resolution than the optical image.
Large depth of field
4
Why Electrons Better Than Light?
The resolution (resolving power) of any
microscope is fundamentally limited by the
wavelength of the illumination used, according
to following equation
δ = 0.61λ/µsinβ or
δ ≅ λ/2
� For light in visible spectrum, the resolution is
approximately 200nm
� It is difficult to work with X-rays (problems with
focusing)
� Need to find something else
reflective index of
the view medium
Semiangle of collection
of the magnifying lens
5
Why Electrons?
Electrons have wave-like properties (de Broglie) with
wavelength dependent upon their energy
A 100keV electron has λ ≅ 4pm.
Other effects limit the resolution, 0.1 ~ 0.2 nm is
achievable, but sufficient to image atoms, because the
distance between the first nearest neighbors of atoms
is about that range.
Also, the electron-specimen interaction provides
many useful signals that can be used to understand
specimens
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Similarity: Light via Electron
Illumination
Condenser
Sample
Imaging
Recording
2
7
Difference: Light via Electron
Source: Light Electrons
Lens:
Glass Magnetic
Medium:
Air Vacuum
Importantly: Significant difference
in resolution
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Electron-Specimen Interactions
e-
Specimen
Inelastic scattered
electrons
Elastic scattered
electrons
Heat
Whether electrons are
reflected or transparent
depends upon:
• Power of incidental
electrons (eV)
• Specimen thickness
• Chemical composition
of the specimen
Inelastic scattered
electrons
Elastic scattered
electrons
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Types of Electron Microscopes
thick
thin
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Scanning Electron Microscope
Electronics
Specimen
chamber
Electron
source
Column
TV screen
Scanning
Electron
Microscope
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Scanning Electron Microscopes
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Essential Components in
Electron Microscope
Electron gun: In order to extract a lot of electrons from
a material, the material we used should have a low
work-function, e.g. tungsten. [Work-function: energy
(or work) required to withdraw an electron completely
from a metal surface. This energy is a measure of how
tightly a particular metal holds its electrons.]
Lenses for electrons: As negatively charged particles,
electrons can be bend in the magnetic field. For this
reason, electron microscopes use magnetic lenses to
bend electrons.
Vacuum system: Electrons, very light in mass, will be
strongly scattered by gas molecules when they travel in
air. In order to avoid it, a vacuum system needs to be
built.
3
13
Working Principle of SEM
A electron beam is produced by the
electron gun and accelerated by the
anode.
Magnetic lenses focus the electron
beam down the sample.
Focused electron beam scans across
the sample by the scanning coils.
Once the electron beam hits the
sample, other electrons originated
from the sample are ejected.
The detectors collect these ejected
electrons and convert them to signals
that are sent to a viewing screen
(CRT).
The CRT and the scan are
synchronous, so that an image of the
entire sample is built up on the CRT.
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Main Signals Collected in a SEM
e-
A thick specimen
Backscattered
electrons
Inelastic scattered electrons Elastic scattered electrons
Secondary
electrons
Characteristic x-rays
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e-This is due to inelastic scattering between incident electron beam
with the outer shelled electrons
in the specimen.
Mechanism of Secondary Electrons
Secondary electrons
are weak in energy,
typically < 50eV.
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Secondary Electrons
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Contrast Raised by Secondary Electrons
Shadow and edge contrast
Secondary
electrons
Secondary
electron
Detector
To see details of surface
morphology, the low
voltage should be used,
however, the resolution is
reduced at the low voltage.
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Signal of an Inclined Sample
4
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GaAs Nanostructures
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e-
Mechanism of Backscattering Electrons
This is due to elastic scattering
between incidental electrons
with nucleus.
Backscattered electrons
are bounced by nucleus
in the sample, so that
they have high energy.
nucleus
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Contrast Raised by Backscattered Electrons
e- e-
Nucleus
High density (high Z) materials cause more
backscattered electrons, so that the high
density materials show brighter contrast.
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Backscattering Electrons Images
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Secondary via Backscattered Electrons
Secondary electrons shows sample topography, whereas
backscattered electrons shows the composition.
Secondary electrons Backscattered electrons
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e-
Photon emission
characteristic x-ray
E=hν
Mechanism of Characteristic X-ray
This is due to inelastic scattering
between incident electron beam
with electrons in the inner shells
of atoms in the specimen.
Typical energy of
characteristic x-ray is
0.5 ~ 20 keV.
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25keV
co
un
ts
Energy Dispersive Spectroscopy
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Example of X-ray Microanalysis
Low average
atomic number
High average
atomic number
Zr50.5Cu21.1Ni11.9Al16.5
Zr46.4Cu19.0Ni11.6Al19.6O1.4Zr37.2Cu23.3Ni9.4Al30.1
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Example of X-ray Mapping
Si
SiO2
Al
TiNx
CoSiy
W
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e-
Increasing voltage
Increasing atomic number
Surface
Source of secondary
electron signal
Source of back-
scattered electrons
Source of X-rays
Interactive Volume and Signals
Interactive
volume
E=eV
Accelerating
voltage
Energy of
electron
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Typical Operating Parameters of SEM
Accelerating voltage: V = 1 ~ 50 kV, usually 5 ~ 40 kV
Probe size of electron beam: 1 ~ 50 µm
Energy of secondary electrons: < 50 eV
Signals of backscattered electrons: > 70% incidental
electrons
Energy range of X-ray: 0.5 ~ 20 keV
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Major Applications of SEM
Topography
� The surface features of an object and its texture (hardness,
reflectivity… etc.)
Morphology
� The shape and size of the particles making up the object
(strength, defects in IC and chips...etc.)
Composition
� The elements and compounds that the object is composed
of and the relative amounts of them (melting point,
reactivity, hardness...etc.)
Crystallographic Information
How the grains are arranged in the object (conductivity,
electrical properties, strength...etc.)
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Advantages of the SEM
Long depth of focus - 3D effect
Large specimen size
Simpler column design
Simple and rapid specimen preparation
Large range of magnification: 3X - 150,000X
Large depth of field
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Limitations of SEM
High vacuum environment for specimen
Specimens have to be conductive
Only surface region of specimen can be viewed
Less resolution than TEM
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Types of Electron Microscopes
thick
thin
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Transmission Electron Microscopes
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Transmission Electron Microscopes
The electron beam
illuminates specimen and
produces an image on
phosphor screen
Image formed as a
projection of the specimen
Contrast observed depends
upon imaging mode used
Sample limitations
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Main Signals Collected in a TEM
Elastic scattered electrons
A thin specimen
e
-
2nm 50nm
Characteristic
x-rays
Inelastic scattering
Diffraction Electron HREM STEM EELS Energy filtered
contrast diffraction imaging Imaging Spectroscopy TEM
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Elastic Scattering
Atomic
planes
e-
d
θ
Wave length
of incidental
electrons: λ
Diffraction occurs when
2dsinθ = nλ
ELASTIC scattering process:
• Changing direction with no
energy loss
• Phonon excitation through
Coulomb interaction between
the incident beam and atomic
nucleus in the sample
• Basis for electron diffraction
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Electron Optics
O
bj
ec
t p
la
ne
B
ac
k
fo
ca
l P
la
ne
Im
ag
e
Pl
an
e
Le
ns
2nm
Crystalline
specimens
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Electron Diffraction
Crystalline
specimen
e-
B
ac
k
Fo
ca
l
Pl
an
e Im
ag
e
Pl
an
e
Le
ns
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Kinds of Electron Diffraction Patterns
Single Crystal Polycrystalline Amorphous
Spot pattern Ring pattern Diffused Ring
pattern
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Index of Electron Diffraction Pattern
Si [111] diffraction pattern
220
022
_
_
g1
g2
[111] //g1× g2
Diffraction pattern of poly- Au
111
220
200
222
311
Showing all reflections
Each diffraction spot corresponds
to a particular set of atomic planes
Each diffraction line corresponds
to a family of atomic planes
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Phase Identification
matrix
200nm
8
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Inelastic scattering
with energy loss
Photon emission
characteristic x-ray
E=hν
e-
Inelastic Scattering
INELASTIC scattering process:
• Incidental electrons
suffer energy loss
• Coulomb interaction with
electrons in the sample
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Major TEM Signals
Conventional Imaging Modes:
�Diffraction Contrast
�Phase Contrast
�Mass/Thickness Contrast
Diffraction Modes:
�Electron Diffraction
Inelastic Signals
�Characteristic X-ray (also called Energy Dispersive
Spectroscopy – EDS)
�Electron Energy Loss Spectroscopy (EELS + EFTEM)
Scanning Transmission Electron Microscopy (STEM)
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Diffraction Contrast
Crystalline
specimens
e-
B
FP
IP
Bright Field
Dark Field
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Origin of Diffraction Contrast
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Diffraction Contrast & Its Applications
Diffraction contrast is used for crystalline specimens
Diffraction contrast is formed with a SINGLE
diffracted (can be transmitted) electron beam and
realised with an aperture at the back focal plane of
the objective lens
Diffraction contrast is mainly used for study of
� Defects
� Precipitates
� Grain sizes and distributions
�……
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Examples of Diffraction Contrast
Ge islands grown on Si substrate
<110>
<100>
Top view Side view
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49
Phase Contrast
Crystalline
specimens
e-
B
FP
IP
50
Phase Contrast & Its Applications
Phase contrast deals also with crystalline specimens
Phase contrast is formed with at least TWO diffracted
electron beams through their interference.
Phase contrast is realised with (or without) an
aperture at the back focal plane of the objective lens
Phase contrast is mainly used for study of
� Defects
� Precipitates
� Interfacial structures
� Crystal growth
�……
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Phase Contrast
Phase contrast requires very thin specimens (< 20 nm
typically) for the interference
Crystals should be orientated to the directions where
the zone axes should be parallel to the incidental
electron beam
Sometimes, image simulations are needed for gain
correct interpretation as atoms can be black or white
in the image
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Examples of Phase Contrast
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Diffraction/Phase Contrasts
GaAs AlAs GaAs
Ge Quantum dots on Si
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Mass/Thickness Contrast
Mass/thickness contrast arises from incoherent elastic
scattering at the nucleus (Rutherford cross section)
� The interaction between electrons and heavy atoms is
stronger than that between electrons and light atoms . If
the thickness is homogeneous, areas in which heavy atoms
are concentrated appear with darker contrast than such
with light atoms (mass contrast). Of course, more
electrons are scattered in thick than in thin areas; thus,
thick areas appear dark (thickness contrast). However, a
thick area with light elements might have the same
contrast as a thinner area with heavier atoms.
The contrast depends upon atomic number Z and
sample thickness t.
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Application of Mass/Thickness Contrast
Amorphous materials, such as polymers and
amorphous porous
Crystalline materials, but with all electron beam
participating the formation of the images.
Biological/soft materials
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Small (< 1 nm) electron
probe across sample
EDS:
Quantitative
compositional
distributions
X-ray detector
EELS:
Compositional
information
+ electronic
structure
E
parallel
electron
detector
Analytic Electron Microscopy
STEM Imaging:
Atomic resolution structural
and compositional information
Magnetic
Prism
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Energy Dispersive Spectroscopy
Multiple
phases
Determination of
local composition 58
Examples of X-ray Mapping
Cu/Co Multilayer Structure
InGaN/GaN
Quantum Wells
In map Cu map Co map
) Elemental mapping can be achieved in a small volume
) The composition may be determined quantitatively
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ZLP
Plasmon
Core-loss
Optical Prism analogy
Electron Energy Loss Spectrum
EELS
spectrometer
EELS
Spectrum
If this is an electron beam and
the prism is magnetic field
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Electron Energy Loss Spectroscopy
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Example of Using Energy Loss Signals
Energy Filtered TEM Electron Energy
Loss Spectrum
Boron K-edge
Nitrogen K-edge
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Catalysts in BN nanotubes
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Contrast Raised by STEM
e- e-
Nucleus
High density (high Z) materials cause more elastic
scattered electrons at higher angles, so that the high
density materials show brighter contrast.
Advantages of STEM
over convictional TEM
images include
• Since this is
insensitive the strain;
• The STEM images
provide chemical
information at atomic
level.
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Ge Quantum Dots Stacks in Si
Rich information regarding to evolution of quantum
dots growth can be obtained in one image!!!
A STEM image
The image tells us:
& If the spacer layer is sufficient thin,
growth of vertically aligned quantum
dots is achievable;
& For health stacks, the average size of
upper dots is larger than the
underlined dots;
& If not, the stack will be terminated;
& There is competition of dots growth!
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Examples of STEM
Sb doped Si
Bi doped Si
Cu
Cu segregated in
Al grain boundary
Perovskite Oxides
grown epitaxially on Si
and Ge
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STEM via EFTEM
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Electron Tomograpahy
e-
Build 3D structure by taking Build 3D structure by taking
images between images between ±±7070˚˚
Electron
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Electron Tomography
Resolution: 2Resolution: 2--10 nm10 nm
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Dynamic Electron Microscopy
– A new trend
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Advantages of the TEM
Superior resolution 0.1~0.2 nm, compared of 1~3 nm
for SEM
Ability to obtain compositional and crystallographic
information from specimens with high spatial
resolution
Allowing to get all sorts of signals from same area
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Limitations of TEM
Very small areas to be investigated, so that it is
important to make sure that the areas to be studied are
representative
Changing for insulating materials, problem for
ceramic materials
The magnetic lens limits the study on magnetic
materials, such as steels.
Sample preparation can be quite lengthy and involved
Electron beams can damage sample and introduce
artifacts
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Conclusion
Electron microscopy provides comprehensive
information of targets with scales down to sub-nano-
scale.
Electron microscopy is a very useful characterising
technique.
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