IRF840

IRF840 N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH MOSFET n TYPICAL RDS(on) = 0.75 Ω n EXTREMELY HIGH dv/dt CAPABILITY n 100% AVALANCHE TESTED n VERY LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ® INTERNAL SCHEMATIC DIAGRAM August 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 500 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC 8.0 A ID Drain Current (continuous) at Tc = 100 oC 5.1 A IDM(•) Drain Current (pulsed) 32 A Ptot Total Dissipation at Tc = 25 oC 125 W Derating Factor 1.0 W/oC dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area (1) ISD ≤ 8A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 Ω 8 A 1 2 3 TO-220 1/8 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.0 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 8.0 A EAS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 50 V) 520 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating Tc = 125 oC 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3 4 V RDS(on) Static Drain-source On Resistance VGS = 10V ID = 4.8 A 0.75 0.85 Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V 8.0 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance VDS > ID(on) x RDS(on)max ID = 4.8 A 4.9 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 1300 200 18 pF pF pF IRF840 2/8 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 250 V ID = 4.3 A RG = 4.7 Ω VGS = 10 V (see test circuit, figure 3) 19 11 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V ID = 8.0 A VGS = 10 V 39 10.6 13.7 50 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 400 V ID = 8 A RG = 4.7 Ω VGS = 10 V (see test circuit, figure 5) 11.5 11 20 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM(•) Source-drain Current Source-drain Current (pulsed) 8.0 32 A A VSD (∗) Forward On Voltage ISD = 8.0 A VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8.0 A di/dt = 100 A/µs VDD = 100 V Tj = 150 oC (see test circuit, figure 5) 420 3.5 16.5 ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance IRF840 3/8 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations IRF840 4/8 Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature IRF840 5/8 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 1: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times IRF840 6/8 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C IRF840 7/8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . IRF840 8/8 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.