Ir2111 High Voltage - High Speed Power Mosfet And Igbt Driver

Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • CMOS Schmitt-triggered inputs with pull-down • Matched propagation delay for both channels • Internally set deadtime • High side output in phase with input Description The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable rugge- dized monolithic construction. Logic input is compatible with standard CMOS outputs. The out- put drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot- through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection Preliminary Data Sheet No. PD60028J IR2111 HALF-BRIDGE DRIVER Product Summary VOFFSET 600V max. IO+/- 200 mA / 420 mA VOUT 10 - 20V ton/off (typ.) 850 & 150 ns Deadtime (typ.) 700 ns Packages VCC VB VS HO LO IN COM IN up to 600V TO LOAD VCC 8 Lead PDIP 8 Lead SOIC IR2111 2 Symbol Definition Min. Max. Units VB High side floating supply voltage -0.3 625 VS High side floating supply offset voltage VB - 25 VB + 0.3 VHO High side floating output voltage VS - 0.3 VB + 0.3 VCC Low side and logic fixed supply voltage -0.3 25 VLO Low side output voltage -0.3 VCC + 0.3 VIN Logic input voltage -0.3 VCC + 0.3 dVs/dt Allowable offset supply voltage transient (figure 2) — 50 V/ns PD Package power dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0 (8 lead SOIC) — 0.625 RthJA Thermal resistance, junction to ambient (8 lead DIP) — 125 (8 lead SOIC) — 200 TJ Junction temperature — 150 TS Storage temperature -55 150 TL Lead temperature (soldering, 10 seconds) — 300 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in figures 7 through 10. V W °C/W Symbol Definition Min. Max. Units VB High side floating supply absolute voltage VS + 10 VS + 20 VS High side floating supply offset voltage Note 1 600 VHO High side floating output voltage VS VB VCC Low side and logic fixed supply voltage 10 20 VLO Low side output voltage 0 VCC VIN Logic input voltage 0 VCC TA Ambient temperature -40 125 Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. °C V °C IR2111 3 Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-on propagation delay — 850 1,000 VS = 0V toff Turn-off propagation delay — 150 180 VS = 600V tr Turn-on rise time — 80 130 tf Turn-off fall time — 40 65 DT Deadtime, LS turn-off to HS turn-on & — 700 900 HS turn-off to LS turn-on MT Delay matching, HS & LS turn-on/off — 30 — Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in figure 3. ns Symbol Definition Min. Typ. Max. Units Test Conditions VIH Logic “1” input voltage for HO & logic “0” for LO 6.4 — — VCC = 10V 9.5 — — VCC = 15V 12.6 — — VCC = 20V VIL Logic “0” input voltage for HO & logic “1” for LO — — 3.8 VCC = 10V — — 6.0 VCC = 15V — — 8.3 VCC = 20V VOH High level output voltage, VBIAS - VO — — 100 IO = 0A VOL Low level output voltage, VO — — 100 IO = 0A ILK Offset supply leakage current — — 50 VB = VS = 600V IQBS Quiescent VBS supply current — 50 100 VIN = 0V or VCC IQCC Quiescent VCC supply current — 70 180 VIN = 0V or VCC IIN+ Logic “1” input bias current — 20 40 VIN = VCC IIN- Logic “0” input bias current — — 1.0 VIN = 0V VBSUV+ VBS supply undervoltage positive going threshold 7.3 8.4 9.5 VBSUV- VBS supply undervoltage negative going threshold 7.0 8.1 9.2 VCCUV+ VCC supply undervoltage positive going threshold 7.6 8.6 9.6 VCCUV- VCC supply undervoltage negative going threshold 7.2 8.2 9.2 IO+ Output high short circuit pulsed current 200 250 — VO = 0V, VIN = VCC PW ≤ 10 µs IO- Output low short circuit pulsed current 420 500 — VO = 15V, VIN = 0V PW ≤ 10 µs Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. mV mA V V µA IR2111 4 Symbol Description IN Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO VB High side floating supply HO High side gate drive output VS High side floating supply return VCC Low side and logic fixed supply LO Low side gate drive output COM Low side return Functional Block Diagram 8 Lead DIP 8 Lead SOIC IR2111 IR2111S Part Number Lead Assignments PULSE G E N IN UV DETECT COM H O V S V CC LO V B Q S R RPULSE FILTER HV LEVEL SHIFTDEAD TIME DEAD TIME UV DETECT Lead Definitions IR2111 5 Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition Figure 5. Deadtime Waveform Definitions Figure 6. Delay Matching Waveform Definitions HO IN LO IN(HO) trton tftoff LO HO 50% 50% 90% 90% 10% 10% IN(LO) IN HO 50% 50% 90% 10% LO 90% 10% DT HO 50% 50% 10% LO 90% MT HOLO MT IN(LO) IN(HO) IR2111 6 8 Lead PDIP 01-3003 01 8 Lead SOIC 01-0021 08 IR2111 7 Frequency (Hz) Figure 9. IR2111 TJ vs. Frequency (IRFBC40) RGATE = 15ΩΩΩΩΩ, VCC = 15V Frequency (Hz) Figure 10. IR2111 TJ vs. Frequency (IRFPC50) RGATE = 10ΩΩΩΩΩ, VCC = 15V Frequency (Hz) Figure 7. IR2111 TJ vs. Frequency (IRFBC20) RGATE = 33ΩΩΩΩΩ, VCC = 15V Frequency (Hz) Figure 8. IR2111 TJ vs. Frequency (IRFBC30) RGATE = 22ΩΩΩΩΩ, VCC = 15V 0 25 50 75 100 125 150 1E+2 1E+3 1E+4 1E+5 1E+6 Ju nc tio n Te m pe ra tu re (°C ) 320 160 30V 0 25 50 75 100 125 150 1E+2 1E+3 1E+4 1E+5 1E+6 Ju nc tio n Te m pe ra tu re (°C ) 320V 160V 30V 0 25 50 75 10 0 12 5 15 0 1E+2 1E+3 1E+4 1E+5 1E+6 Ju n ct io n Te m pe ra tu re (°C ) 32 0V 16 0V 30 V 0 25 50 75 100 125 150 1E+2 1E+3 1E+4 1E+5 1E+6 Ju nc tio n Te m pe ra tu re (°C ) 320V 160V 30V IR2111 8 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/1/99 Frequency (Hz) Figure 13. IR2111S TJ vs. Frequency (IRFBC40) RGATE = 15ΩΩΩΩΩ, VCC = 15V Frequency (Hz) Figure 14. IR2111S TJ vs. Frequency (IRFPC50) RGATE = 10ΩΩΩΩΩ, VCC = 15V Frequency (Hz) Figure 11. IR2111S TJ vs. Frequency (IRFBC20) RGATE = 33ΩΩΩΩΩ, VCC = 15V Frequency (Hz) Figure 12. IR2111S TJ vs. Frequency (IRFBC30) RGATE = 22ΩΩΩΩΩ, VCC = 15V 0 25 50 75 100 125 150 1E+2 1E+3 1E+4 1E+5 1E+6 Ju nc tio n Te m pe ra tu re (°C ) 320V 160 30V 0 25 50 75 100 125 150 1E+2 1E+3 1E+4 1E+5 1E+6 Ju nc tio n Te m pe ra tu re (°C ) 320V 140V 30V 0 25 50 75 100 125 150 1E+2 1E+3 1E+4 1E+5 1E+6 Ju nc tio n Te m pe ra tu re (°C ) 320V 140V 30V 0 25 50 75 100 125 150 1E+2 1E+3 1E+4 1E+5 1E+6 Ju nc tio n Te m pe ra tu re (°C ) 320V 140V 30V