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UNISONIC TECHNOLOGIES CO., LTD
5N60 Power MOSFET
www.unisonic.com.tw 1 of 6
Copyright © 2005 Unisonic Technologies Co., Ltd QW-R502-065,B
4.5 Amps, 600 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 5N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra low gate charge ( typical 15 nC )
* Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1.Gate
3.Source
2.Drain
TO-220
1
1
TO-220F
*Pb-free plating product number: 5N60L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating
Package
1 2 3
Packing
5N60-TA3-T 5N60L-TA3-T TO-220 G D S Tube
5N60-TF3-T 5N60L-TF3-T TO-220F G D S Tube
5N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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5N60 Power MOSFET
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ABSOLUTE MAXIMUM RATING (TC = 25℃ unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 1) IAR 4.5 A
TC = 25℃ 4.5 A Continuous Drain Current
TC = 100℃
ID 2.6 A
Pulsed Drain Current (Note 1) IDM 18 A
Avalanche Energy, Single Pulsed (Note 2) EAS 210 mJ
Avalanche Energy, Repetitive Limited by TJ(MAX) EAR 10 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
TC = 25℃ 100 W Power Dissipation
Derate above 25℃ PD 0.8 W/℃
Junction Temperature TJ +150 ℃
Operating and Storage Temperature TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction-to-Ambient θJA 62.5 °C/W
Junction-to-Case θJC 1.25 °C/W
Case-to-Sink θCS 0.5 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS =0V, ID = 250µA 600 V
VDS =600V, VGS = 0V 1 µADrain-Source Leakage Current IDSS VDS =480V, TC = 125℃ 10 µA
Breakdown Voltage Temperature
Coefficient
BV△ DSS/△
TJ
ID =250µA, Referenced to 25℃ 0.6 V/℃
Forward VGS =30V, VDS = 0V 100 nAGate-Body Leakage Current
Reverse
IGSS VGS =-30V, VDS = 0V -100 nA
On Characteristics
Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250µA 2.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID = 2.25A 2.0 2.5 Ω
Forward Transconductance gFS VDS =40V, ID = 2.25A (Note 4) 4.7 S
Dynamic Characteristics
Input Capacitance CISS 515 670 pF
Output Capacitance COSS 55 72 pF
Reverse Transfer Capacitance CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
6.5 8.5 pF
Switching Characteristics
Delay Time tD(ON) 10 30 nsTurn-On
Rise Time tR 42 90 ns
Delay Time tD(OFF) 38 85 nsTurn-Off
Fall Time tF
VDD = 300V, ID =4.5 A,
RG = 25Ω (Note 4, 5)
46 100 ns
Total Gate Charge QG 15 19 nC
Gate-Source Charge QGS 2.5 nC
Gate-Drain Charge QGD
VDS = 480 V, ID = 4.5A,
VGS = 10 V (Note 4, 5)
6.6 nC
5N60 Power MOSFET
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A 1.4 V
Maximum Continuous Drain-Source Diode
Forward Current
IS
4.5 A
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
18 A
Reverse Recovery Time tRR 300 ns
Reverse Recovery Charge QRR
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/µs (Note 4) 2.2 µC
Note 1. Repetitive Rating : Pulse width limited by TJ
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃
3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
5N60 Power MOSFET
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TEST CIRCUITS AND WAVEFORMS
Same Type
as D.U.T.
L
VDDDriver
VGS
RG
-
VDS
D.U.T. +
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
P. W.
Period
D=VGS
(Driver)
ISD
(D.U.T.)
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
VDD
10V
VDS
(D.U.T.)
-
+
VGS=
P.W.
Period
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Fig. 1B Peak Diode Recovery dv/dt Waveforms
5N60 Power MOSFET
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TEST CIRCUITS AND WAVEFORMS (Cont.)
VGS
D.U.T.
RG
10V
VDS
RL
VDD
VDS 90%
10%
VGS
tD(ON)
tR
tD(OFF)
tFPulse Width ≤ 1μs
Duty Factor ≤0.1%
Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms
50kΩ
0.3μF
DUT
VDS
Same Type
as D.U.T.
10V0.2μF
12V
Charge
QGS QGD
QG
VGS
3mA
VG
Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform
D.U.T.
RD
10V
VDS
L
VDD
tp IAS
tp Time
BVDSS
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
5N60 Power MOSFET
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TYPICAL CHARACTERISTICS
101
100
10110-1 100
Drain-Source Voltage, VDS (V)
D
ra
in
C
ur
re
nt
, I
D
(A
)
10-1
*Notes:
1. 250µs Pulse Test
2. TC=25℃
V GS
Top: 5.0V
Bottorm :4.5V
On-Region Characteristics
10-2
100
10-1
2
Gate-Source Voltage, VGS (V)
D
ra
in
C
ur
re
nt
, I
D
(A
)
Transfer Characteristics
4 6 8 10
101
*Notes:
1. VDS=40V
2.250µs Pulse Test
25℃
5V
4.5V
0
0
D
ra
in
-S
ou
rc
e
O
n-
R
es
is
ta
nc
e,
R
D
S(
O
N)
(Ω
)
Drain Current, ID (A)
2 4
VGS=20V
1
2
4
5
6
On-Resistance Variation vs. Drain Current
and Gate Voltage
3
6 8 10
*Note: TJ=25℃
VGS=10V
100
10-1
10-2
Drain-Source Voltage, VDS (V)
D
ra
in
C
ur
re
nt
, I
D
(A
)
102101100 103
10ms
Operation in This Area
is Limited by RDS(on)
*Notes:
1. TC=25℃
2. TJ=150℃
3. Single Pulse
101
Maximum Safe Operating Area
1ms
100ms
100sµ
DC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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