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5N60C www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R502-065,B 4.5 Amps, 600 Volts N-CHANN...

5N60C
www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R502-065,B 4.5 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra low gate charge ( typical 15 nC ) * Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 1 1 TO-220F *Pb-free plating product number: 5N60L „ ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 5N60-TA3-T 5N60L-TA3-T TO-220 G D S Tube 5N60-TF3-T 5N60L-TF3-T TO-220F G D S Tube 5N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn 查询5N60供应商查询5N60供应商 5N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-065,B „ ABSOLUTE MAXIMUM RATING (TC = 25℃ unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 4.5 A TC = 25℃ 4.5 A Continuous Drain Current TC = 100℃ ID 2.6 A Pulsed Drain Current (Note 1) IDM 18 A Avalanche Energy, Single Pulsed (Note 2) EAS 210 mJ Avalanche Energy, Repetitive Limited by TJ(MAX) EAR 10 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TC = 25℃ 100 W Power Dissipation Derate above 25℃ PD 0.8 W/℃ Junction Temperature TJ +150 ℃ Operating and Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction-to-Ambient θJA 62.5 °C/W Junction-to-Case θJC 1.25 °C/W Case-to-Sink θCS 0.5 °C/W „ ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS =0V, ID = 250µA 600 V VDS =600V, VGS = 0V 1 µADrain-Source Leakage Current IDSS VDS =480V, TC = 125℃ 10 µA Breakdown Voltage Temperature Coefficient BV△ DSS/△ TJ ID =250µA, Referenced to 25℃ 0.6 V/℃ Forward VGS =30V, VDS = 0V 100 nAGate-Body Leakage Current Reverse IGSS VGS =-30V, VDS = 0V -100 nA On Characteristics Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250µA 2.0 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID = 2.25A 2.0 2.5 Ω Forward Transconductance gFS VDS =40V, ID = 2.25A (Note 4) 4.7 S Dynamic Characteristics Input Capacitance CISS 515 670 pF Output Capacitance COSS 55 72 pF Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1.0MHz 6.5 8.5 pF Switching Characteristics Delay Time tD(ON) 10 30 nsTurn-On Rise Time tR 42 90 ns Delay Time tD(OFF) 38 85 nsTurn-Off Fall Time tF VDD = 300V, ID =4.5 A, RG = 25Ω (Note 4, 5) 46 100 ns Total Gate Charge QG 15 19 nC Gate-Source Charge QGS 2.5 nC Gate-Drain Charge QGD VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4, 5) 6.6 nC 5N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-065,B „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 18 A Reverse Recovery Time tRR 300 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/µs (Note 4) 2.2 µC Note 1. Repetitive Rating : Pulse width limited by TJ 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃ 3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃ 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 5N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-065,B „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG - VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. Period D=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) - + VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit Fig. 1B Peak Diode Recovery dv/dt Waveforms 5N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-065,B „ TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON) tR tD(OFF) tFPulse Width ≤ 1μs Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 50kΩ 0.3μF DUT VDS Same Type as D.U.T. 10V0.2μF 12V Charge QGS QGD QG VGS 3mA VG Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform D.U.T. RD 10V VDS L VDD tp IAS tp Time BVDSS Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms 5N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-065,B „ TYPICAL CHARACTERISTICS 101 100 10110-1 100 Drain-Source Voltage, VDS (V) D ra in C ur re nt , I D (A ) 10-1 *Notes: 1. 250µs Pulse Test 2. TC=25℃ V GS Top: 5.0V Bottorm :4.5V On-Region Characteristics 10-2 100 10-1 2 Gate-Source Voltage, VGS (V) D ra in C ur re nt , I D (A ) Transfer Characteristics 4 6 8 10 101 *Notes: 1. VDS=40V 2.250µs Pulse Test 25℃ 5V 4.5V 0 0 D ra in -S ou rc e O n- R es is ta nc e, R D S( O N) (Ω ) Drain Current, ID (A) 2 4 VGS=20V 1 2 4 5 6 On-Resistance Variation vs. Drain Current and Gate Voltage 3 6 8 10 *Note: TJ=25℃ VGS=10V 100 10-1 10-2 Drain-Source Voltage, VDS (V) D ra in C ur re nt , I D (A ) 102101100 103 10ms Operation in This Area is Limited by RDS(on) *Notes: 1. TC=25℃ 2. TJ=150℃ 3. Single Pulse 101 Maximum Safe Operating Area 1ms 100ms 100sµ DC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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