IR2111中文资料

VCCVBVSHOLOINCOMINupto600VTOLOADVCCFeaturesnFloatingchanneldesignedforbootstrapoperationFullyoperationalto+600VToleranttonegativetransientvoltagedV/dtimmunenGatedrivesupplyrangefrom10to20VnUndervoltagelockoutforbothchannelsnCMOSSchmitt-triggeredinputswithpull-downnMatchedpropagationdelayforbothchannelsnInternallysetdeadtimenHighsideoutputinphasewithinputDescriptionTheIR2111isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannelsdesignedforhalf-bridgeapplications.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputiscompatiblewithstandardCMOSoutputs.Theoutputdriversfeatureahighpulsecurrentbufferstagedesignedforminimumdrivercross-conduction.Internaldeadtimeisprovidedtoavoidshoot-throughintheoutputhalf-bridge.ThefloatingchannelcanbeusedtodriveanN-channelpowerMOSFETorIGBTinthehighsideconfigurationwhichoperatesupto600volts.TypicalConnectionDataSheetNo.PD-6.028CIR2111HALF-BRIDGEDRIVERProductSummaryVOFFSET600Vmax.IO+/-200mA/420mAVOUT10-20Vton/off(typ.)850&150nsDeadtime(typ.)700nsPackagesCONTROLINTEGRATEDCIRCUITDESIGNERSMANUALB-39元器件交易网www.cecb2b.comIR2111B-40CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALParameterValueSymbolDefinitionMin.Max.UnitsVBHighSideFloatingSupplyVoltage-0.3625VSHighSideFloatingSupplyOffsetVoltageVB-25VB+0.3VHOHighSideFloatingOutputVoltageVS-0.3VB+0.3VCCLowSideandLogicFixedSupplyVoltage-0.325VLOLowSideOutputVoltage-0.3VCC+0.3VINLogicInputVoltage-0.3VCC+0.3dVs/dtAllowableOffsetSupplyVoltageTransient(Figure2)—50V/nsPDPackagePowerDissipation@TA≤+25°C(8LeadDIP)—1.0(8LeadSOIC)—0.625RθJAThermalResistance,JunctiontoAmbient(8LeadDIP)—125(8LeadSOIC)—200TJJunctionTemperature—150TSStorageTemperature-55150°CTLLeadTemperature(Soldering,10seconds)—300AbsoluteMaximumRatingsAbsoluteMaximumRatingsindicatesustainedlimitsbeyondwhichdamagetothedevicemayoccur.AllvoltageparametersareabsolutevoltagesreferencedtoCOM.TheThermalResistanceandPowerDissipationratingsaremeasuredunderboardmountedandstillairconditions.AdditionalinformationisshowninFigures7through10.VW°C/WParameterValueSymbolDefinitionMin.Max.UnitsVBHighSideFloatingSupplyAbsoluteVoltageVS+10VS+20VSHighSideFloatingSupplyOffsetVoltageNote1600VHOHighSideFloatingOutputVoltageVSVBVCCLowSideandLogicFixedSupplyVoltage1020VLOLowSideOutputVoltage0VCCVINLogicInputVoltage0VCCTAAmbientTemperature-40125Note1:LogicoperationalforVSof-5to+600V.LogicstateheldforVSof-5Vto-VBS.RecommendedOperatingConditionsTheInput/OutputlogictimingdiagramisshowninFigure1.Forproperoperationthedeviceshouldbeusedwithintherecommendedconditions.TheVSoffsetratingistestedwithallsuppliesbiasedat15Vdifferential.°CV元器件交易网www.cecb2b.comIR2111CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALB-41ParameterValueSymbolDefinitionMin.Typ.Max.UnitsTestConditionstonTurn-OnPropagationDelay—8501,000VS=0VtoffTurn-OffPropagationDelay—150180VS=600VtrTurn-OnRiseTime—80130tfTurn-OffFallTime—4065DTDeadtime,LSTurn-OfftoHSTurn-On&—700900HSTurn-OfftoLSTurn-OnMTDelayMatching,HS&LSTurn-On/Off—30—DynamicElectricalCharacteristicsVBIAS(VCC,VBS)=15V,CL=1000pFandTA=25°Cunlessotherwisespecified.ThedynamicelectricalcharacteristicsaremeasuredusingthetestcircuitshowninFigure3.nsParameterValueSymbolDefinitionMin.Typ.Max.UnitsTestConditionsVIHLogic“1”InputVoltageforHO&Logic“0”forLO6.4——VCC=10V9.5——VCC=15V12.6——VCC=20VVILLogic“0”InputVoltageforHO&Logic“1”forLO——3.8VCC=10V——6.0VCC=15V——8.3VCC=20VVOHHighLevelOutputVoltage,VBIAS-VO——100IO=0AVOLLowLevelOutputVoltage,VO——100IO=0AILKOffsetSupplyLeakageCurrent——50VB=VS=600VIQBSQuiescentVBSSupplyCurrent—50100VIN=0VorVCCIQCCQuiescentVCCSupplyCurrent—70180µAVIN=0VorVCCIIN+Logic“1”InputBiasCurrent—2040VIN=VCCIIN-Logic“0”InputBiasCurrent——1.0VIN=0VVBSUV+VBSSupplyUndervoltagePositiveGoingThreshold7.38.49.5VBSUV-VBSSupplyUndervoltageNegativeGoingThreshold7.08.19.2VCCUV+VCCSupplyUndervoltagePositiveGoingThreshold7.68.69.6VCCUV-VCCSupplyUndervoltageNegativeGoingThreshold7.28.29.2IO+OutputHighShortCircuitPulsedCurrent200250—VO=0V,VIN=VCCPW≤10µsIO-OutputLowShortCircuitPulsedCurrent420500—VO=15V,VIN=0VPW≤10µsStaticElectricalCharacteristicsVBIAS(VCC,VBS)=15VandTA=25°Cunlessotherwisespecified.TheVIN,VTHandIINparametersarereferencedtoCOM.TheVOandIOparametersarereferencedtoCOMandareapplicabletotherespectiveoutputleads:HOorLO.VmVmAV元器件交易网www.cecb2b.comIR2111B-42CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALLeadDefinitionsLeadSymbolDescriptionINLogicinputforhighsideandlowsidegatedriveroutputs(HO&LO),inphasewithHOVBHighsidefloatingsupplyHOHighsidegatedriveoutputVSHighsidefloatingsupplyreturnVCCLowsideandlogicfixedsupplyLOLowsidegatedriveoutputCOMLowsidereturnFunctionalBlockDiagram8LeadDIPSO-8IR2111IR2111SPartNumberLeadAssignmentsPULSEGENINUVDETECTCOMHOVSVCCLOVBQSRRPULSEFILTERHVLEVELSHIFTDEADTIMEDEADTIMEUVDETECT元器件交易网www.cecb2b.comIR2111CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALB-43ThicknessofGateOxide800ÅConnectionsMaterialPolySiliconFirstWidth4µmLayerSpacing6µmThickness5000ÅMaterialAl-Si(Si:1.0%±0.1%)SecondWidth6µmLayerSpacing9µmThickness20,000ÅContactHoleDimension8µmX8µmInsulationLayerMaterialPSG(SiO2)Thickness1.5µmPassivationMaterialPSG(SiO2)Thickness1.5µmMethodofSawFullCutMethodofDieBondAblebond84-1WireBondMethodThermoSonicMaterialAu(1.0mil/1.3mil)LeadframeMaterialCuDieAreaAgLeadPlatingPb:Sn(37:63)PackageTypes8LeadPDIP/SO-8MaterialsEME6300/MP150/MP190Remarks:DeviceInformationProcess&DesignRuleHVDCMOS4.0µmTransistorCount164DieSize70X96X26(mil)DieOutline元器件交易网www.cecb2b.comIR2111B-44CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALFigure1.Input/OutputTimingDiagramFigure2.FloatingSupplyVoltageTransientTestCircuitFigure3.SwitchingTimeTestCircuitFigure4.SwitchingTimeWaveformDefinitionFigure5.DeadtimeWaveformDefinitionsHOINLOIN(HO)trtontftoffLOHO50%50%90%90%10%10%IN(LO)INHO50%50%90%10%LO90%10%DTFigure6.DelayMatchingWaveformDefinitionsHO50%50%10%LO90%MTHOLOMTIN(LO)IN(HO)元器件交易网www.cecb2b.comIR2111CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALB-45Figure9.IR2111TJvs.Frequency(IRFBC40)RGATE=15ΩΩΩΩΩ,VCC=15VFigure10.IR2111TJvs.Frequency(IRFPE50)RGATE=10ΩΩΩΩΩ,VCC=15VFigure7.IR2111TJvs.Frequency(IRFBC20)RGATE=33ΩΩΩΩΩ,VCC=15VFigure8.IR2111TJvs.Frequency(IRFBC30)RGATE=22ΩΩΩΩΩ,VCC=15V02550751001251501E+21E+31E+41E+51E+6Frequency(Hz)JunctionTemperature(°C)320V140V10V02550751001251501E+21E+31E+41E+51E+6Frequency(Hz)JunctionTemperature(°C)320V140V10V02550751001251501E+21E+31E+41E+51E+6Frequency(Hz)JunctionTemperature(°C)320V140V10V02550751001251501E+21E+31E+41E+51E+6Frequency(Hz)JunctionTemperature(°C)320V140V10V元器件交易网www.cecb2b.com