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首页 ME2109ME2139ME2149优秀升压IC设计方案

ME2109ME2139ME2149优秀升压IC设计方案.doc

ME2109ME2139ME2149优秀升压IC设计方案

李思索
2017-10-25 0人阅读 举报 0 0 暂无简介

简介:本文档为《ME2109ME2139ME2149优秀升压IC设计方案doc》,可适用于高中教育领域

MEMEME优秀升压IC设计方案MEMEME移动电源优秀升压IC外置MOSFETMEM实际效率高,在AA最佳低成本升压方案,IC与外围器件温度可保证在常温ME系列是采用CMOS升压型开关稳压器,其主要包括一个参考电压源,一个振荡电路,一个误差放大器,一个相位补偿电路,通过PWMPFM切换控制电路。随着外部低通态电阻N沟道功率MOS,本产品适用于需要高效率和高输出电流的应用。ME系列交换机操作PFM控制电路的占空比为,的PWMPFM切换控制电路在轻负载,并防止IC工作电流效率下降。特点:低电压工作:启动保证从VIOUT=mA占空比:内置PWMPFM切换控制电路,。振荡频率:MHz的外部部件:线圈,二极管,电容器和晶体管输出电压范围:VV输出电压精度:,软启动功能:毫秒。包装:SOT应用范围:MP播放器,数字音频播放器数码相机,GPS,无线收发器便携式设备ULTRASMALLPACKAGEPWMPFMSWITCHINGCONTROLMESTEPUPSWITCHINGREGULATORDescriptionFeatureTheMEseriesisaCMOSstepup,Lowvoltageoperation:StartupisguaranteedswitchingregulatorwhichmainlyconsistsofafromV(I=mA)OUTreferencevoltagesource,anoscillationcircuit,,Dutyratio:BuiltinPWMPFMswitchingcontrolanerroramplifier,aphasecompensationcircuit,circuittoaPWMPFMswitchingcontrolcircuitWithan,oscillatorfrequency:MHzexternallowONresistanceNchPowerMOS,,Externalparts:coil,diode,capacitor,andthisproductisapplicabletoapplicationstransistorrequiringhighefficiencyandhighoutputcurrent,Outputvoltagerange:V~VTheMEseriesswitchesitsoperationtothe,Outputvoltageaccuracy:PFMcontrolcircuitwhosedutyratioiswith,Softstartfunction:mS,PACKAGE:SOTtothePWMPFMswitchingcontrolcircuitunderalightloadandtopreventdeclineintheefficiencybyICoperationcurrentTypicalApplicationSelectionGuide,MPplayers,digitalaudioplayers,Digitalcameras,GPS,wirelesstransceiver,PortabledevicesPinConfigurationMEVDDFBSWICHINGCETYPEPOSFIXPACKAGEFEATURETRANSISTORFUNCTIONFUNCTIONFUNCTIONExternalMEFMSOTYesYesYesExtFBTransistorSOTPininformationMEFPinNumberPinNameFunctionSOTFBFeedBackvoltagepinVDDICpowersupplypinCEShutdownpinGNDGNDpinEXTExternaltransistorconnectionpinBlockDiagramMEAbsoluteMaximumRangPARAMETERSYMBOLRATINGUNIT,VDDPinVoltageVDDV,VDDEXTPinVoltageEXTV,VinCEPinVoltageVVCEEXTPinCurrentmAIEXTPowerDissipation(SOT)PdmWOperatingTemperatureRange~TOprStorageTemperatureRange~TstgElectricalCharacteristicsMEMEFMeasuringconditions:VDD=V=VTopt=。Unlessotherwisespecified。CEParameterSYMBOLCONDITIONMINTYPMAXUNITCircuitFeedbackvoltageVVFBInputvoltageVVINOperationstartVVI=mASTOUTvoltageVOscillationstartNoexternalparts,voltageappliedtoVVOUTSTvoltageI=mAMeasuredbydecreasingVINvoltageOUTOperationholdingVVHLDgraduallyvoltageCurrentconsumptionV=V(S)×μAIFBFBSSCurrentconsumptionV=VμAIFBSSCurrentconsumptionV=VμAICESSSduringshutdownV=VVmAIEXTOUTEXTHEXTpinoutputcurrentV=VmAIEXTEXTLFeedbackTa=ppmvoltagetemperaturecoefficientOscillationfrequencyFoscMHz,MAXDUTYMaxdutyratioV=V(S)×FBFBPWMPFM,PFMDUTYV=V(S)×,noloadFBFBswitchingdutyratioMeasuredtheoscillationatEXTpinVVSHShutdownpininputVVVVOUTSLvoltageJudgedthestopofoscillationatEXTpinV<VVVOUTSLV=V(S)×μAICEFBSHShutdownpininputvoltageV=VμAICESLSoftstarttimetssmS,EfficiencyEFFINote:MEV(S)isthesetoutputvoltagevalue,andVisthetypicalvalueoftheoutputvoltageOUTOUTV(S)canbesetbyusingtherateofVandoutputvoltagesettingresistors(R,R)OBV(S)isthesetoutputvoltagevalueFBVDDVseparatetype:OUTVDD<VisrecommendedtostabilizetheoutputvoltageandoscillationfrequencyVTestCircuitExternalparts(suggest)、DiodeuseSchottkydiodesuchasINorIN(forwardvoltagedrop:V)、Inductor:μH(r<mΩ)、Capacitor:ceramiccapacitorμF(Itisbesttousetwoparallelconnectionceramiccapacitors)、Feedbackresistors:RR<KΩExternalpartsselectionforDCDCconverterMETherelationshipbetweenmajorcharacteristicsofthestepupcircuitandcharacteristicsparametersoftheexternalpartsareshowninFigureForhighefficiencyForlargeroutputcurrentForsmallerripplevoltageOperationStandbyefficiencyefficiencySmallerinductanceLargerinductanceSmallerDCresistanceofinductorLargeoutputcapacitanceLargeoutputcapacitanceWithMOSFET,smallerinputcapacitanceWithMOSFET,smallerONresistanceWithbipolartransistor,largerexternalWithbipolartransistor,resistanceRbsmallerexternalresisitanceRbFigureRelationshipbetweenmajorcharacteristicsofthestepupcircuitandexternalpartsInductorAninductancehasstronginfluenceonmaximumoutputcurrentIandefficiencyηOUTFigureshowstherelationbetweenI,andηcharacteristicstoLofMEFOUTFigureL,IOUTandηcharacteristicsThepeakcurrent(I)increasesbydecreasingLandthestabilityofacircuitimprovesandIincreasesIfLisPKOUTfurthermoremadesmall,efficiencyfallsandinrunningshort,Idecreases(BasedonthecurrentdrivecapabilityOUTMEofexternalswitchingtransistor)METhelossofIbytheswitchingtransistordecreasesbyincreasingLandtheefficiencybecomesmaximumataPKcertainLvalueFurtherincreasingLdecreasesefficiencyduetothelossofDCresistanceofthecoilAlso,IOUTdecreases,tooOscillationfrequencyishigher,smalleronecanbechoseandalsomakescoilsmallerTherecommendedinductancesaretoinductorforMEFµHChooseavalueforLbyreferringtothereferencedatabecausethemaximumoutputcurrentisduetotheinputvoltageinanactualcaseChooseaninductorsothatIdoesnotexceedtheallowablecurrentExceedingthePKallowablecurrentoftheinductorcausesmagneticsaturation,remarkablelowefficiencyanddestructionoftheICchipduetoalargecurrentIPKinuncontinuousmodeiscalculatedfromthefollowingequation:(VV,V)IOUTOUTDINI,(A)PKfLOSCFosc=oscillationfrequency,VDD=VDiodeUseanexternaldiodethatmeetsthefollowingrequirements:•Lowforwardvoltage:(VF<V)•Highswitchingspeed:(nsmax)•Reversevoltage:VOUTVFormore•Ratedcurrent:IPKormoreCapacitor(CIN,CO)Toimproveefficiency,aninputcapacitor(C)lowersthepowersupplyimpedanceandaveragestheinputINcurrentSelectCaccordingtotheimpedanceofthepowersupplyusedTherecommendedcapacitanceisμFINfortheMEFAnoutputcapacitor(C),whichisusedtosmooththeoutputvoltage,requiresacapacitancelargerthanthatOUTofthestepdowntypebecausethecurrentisintermittentlysuppliedfromtheinputtotheoutputsideinthestepuptypeAμFceramiccapacitorisrecommendedfortheMEFHowever,ahighercapacitanceisrecommendediftheoutputvoltageishighortheloadcurrentislargeIftheoutputvoltageorloadcurrentislow,aboutμFcanbeusedwithoutproblemsSelectCaftersufficientevaluationwithactualapplicationOUTAceramiccapacitorcanbeusedforboththeinputandoutputMEEnhancementMOSFETtypeMEForaMOSFET,anNchannelpowerMOSFETshouldbeusedBecausethegatevoltageandcurrentoftheexternalpowerMOSFETaresuppliedfromthesteppedupoutputvoltageV,theMOSFETisdrivenmoreOUTeffectivelyDependingontheMOSFETyouuseinyourdevice,thereisachanceofacurrentoverrunatpowerONThoroughlytestallsettingswithyourdevicebeforedecidingonwhichonetouseAlso,trytouseaMOSFETwiththeinputcapacitanceofpForlessSincetheONresistoroftheMOSFETmightdependonthedifferencebetweentheoutputvoltageVOUTandthethresholdvoltageofMOSFET,andaffecttheoutputcurrentaswellastheefficiency,thethresholdvoltageshouldbelowWhentheoutputvoltageislow,thecircuitoperatesonlywhentheMOSFEThasthethresholdvoltagelowerthantheoutputvoltagePrecautionsMountexternalcapacitors,adiode,andacoilascloseaspossibletotheICUniqueripplevoltageandspikenoiseoccurinswitchingregulatorsBecausetheylargelydependonthecoilandthecapacitorused,checkthemusinganactuallymountedmodelMakesuredissipationoftheswitchingtransistor(especiallyatahightemperature)doesnotexceedtheallowablepowerdissipationofthepackageTheperformanceofthisICvariesdependingonthedesignofthePCBpatterns,peripheralcircuitsandexternalpartsThoroughlytestallsettingswithyourdeviceAlso,trytouserecommendedexternalpartsTypicalApplicationCircuitForFBandexternalForFBandexternalTypicalPerformanceCharacteristicsMEVin=VVin=VVin=VVin=VVin=VVin=VPackageDimensionMEPackagetype:SOTUnit:mm(inch)MillimetersInchesDIMMinMaxMinMaxAAABCDEEeREFREFeREFREFLaMETheinformationdescribedhereinissubjecttochangewithoutnoticeNanjingMicroOneElectronicsIncisnotresponsibleforanyproblemscausedbycircuitsordiagramsdescribedhereinwhoserelatedindustrialproperties,patents,orotherrightsbelongtothirdpartiesTheapplicationcircuitexamplesexplaintypicalapplicationsoftheproducts,anddonotguaranteethesuccessofanyspecificmassproductiondesignUseoftheinformationdescribedhereinforotherpurposesandorreproductionorcopyingionofNanjingMicroOneElectronicsIncisstrictlyprohibitedwithouttheexpresspermissTheproductsdescribedhereincannotbeusedaspartofanydeviceorequipmentaffectingthehumanbody,suchasexerciseequipment,medicalequipment,securitysystems,gasequipment,oranyapparatusinstalledinairplanesandothervehicles,withoutpriorwrittenpermissionofNanjingMicroOneElectronicsIncAlthoughNanjingMicroOneElectronicsIncexertsthegreatestpossibleefforttoensurehighqualityandreliability,thefailureormalfunctionofsemiconductorproductsmayoccurTheuseroftheseproductsshouldthereforegivethoroughconsiderationtosafetydesign,includingredundancy,firepreventionmeasures,andmalfunctionprevention,topreventanyaccidents,fires,orcommunitydamagethatmayensue

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ME2109ME2139ME2149优秀升压IC设计方案

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