单向可控硅-双向可控硅选型手册（可编辑）

单向可控硅-双向可控硅选型手册（可编辑） 单向可控硅-双向可控硅选型手册 SCRTRIACs 2012 Q3 SEMIWILL - - - 100V 1800V 0 3A 100A SOT 23 SOT 89 SOT 223 - - - - - - - - TO 92 TO 126 TO 251 TO 252 TO 220AB TO 220F TO 3P TO 247 SCRTRIACs com Product Index Sensitive Gate SCRs BT169D BT169G BT169DS BT169S BT169M BT169N MCR100-6 MCR100-8 MCK100-6 MCK100-8 C106 2P4M 2P5M 2P6M X0205 X0405 MCR706 TS820 SCRs Bt151 BT151S BT152 16TTS16 25TTS16 30TTS16 40TPS12 40TPS16 70TPS12 TOTPS16 TRIACs MAC97A6 MAC97A8 BT131 BT134 BT136 BTAB06 BTAB08 BTAB10 BTAB12 BTAB16 BTAB20 BTAB24 BTAB41 BTAB60 Sensitive Gate SCRs SEMIWILLPIGT SOT-23SOT-89SOT-223TO-92TO-251TO-252TO-263TO-220TO-220FTO-3PTO-24 7 FEATURES PNPN devices designed for high volume line-powered consumer applications such as relay and lamp drivers small motor controls gate drivers for larger thyristors and sensing and detection circuits PACKAGE SOT-23SOT-89SOT-223TO-92TO-251TO-252TO-263TO-220TO-220FTO-3PTO-247 etc SOLUTIONS Energy saving lamp protection circuit protector of leakage of electricity gas ignition device a negative ion generator motorcycle ignition curlers digital camera flasher a touch switch BT169D SENSITIVE GATE SILICON CONTROLLED RECTIFIERS A K DESCRIPTION G PNPN devices designed for high volume line-powered consumer applications such as relay and lamp drivers SCHEMATIC SYMBOL small motor controls gate drivers for larger thyristors and sensing and detection circuits FEATURES Sensitive gate allows triggering by micro controllers and other logic circuits Blocking voltage to 400V On-state current rating of 08A RMS at 80?C K High surge current capability – 10A G A Minimum and imum values of IGT VGT and IH specified for ease of design Immunity to dVdt – 20Vμsec minimum at 110?C TO-92 PACKAGE Glass-passivated surface for reliability and uniformity ABSOLUTE IMUM RATINGS TJ 25?C UNLESS OTHERWISE SPECIFIED Symbol Parameter Condition Ratings Units V DRM Repetitive Peak Off -State Voltage 400 V IT AV Average On-State Current Half SineWave TC 74 ?C 05 A IT RMS com-State Current All Conduction Angle 08 A ITSM Surge On-State Current 12 Cycle60HzSine Wave Non-Repetitive 10 A I2 2 t I t for Fusing t 83ms 0415 A2s PGM Forward Peak Gate Power Dissipation 01 W PG AV Forward Average Gate Power Dissipation 01 W IFGM ForwardPeak Gate Current 1 A V RGM Reverse Peak Gate Voltage 5 V TJ Operating Junction Temperature - 40 125 ?C TSTG Storage Temperature - 40 125 ?C THERMAL RESISTANCES Symbol Parameter Value Unit Rth j-c Junction to Case -92 70 ?CW TO Rth j-a Junction to Ambient TO-92 180 ?CW protekdevicescom 004 com 05081R11 211 Page 1 SCRTRIACs BT169D PP0640SA - PP3500SC ELECTRICAL CHARACTERISTICS TC 25 ?C UNLESS OTHERWISE NOTED Ratings Symbol Items Conditions Unit Min Typ VAK VDRM or VRRM RGK 1000ohm TC 25 ?C — — 10 IDRM Repetitive Peak Off-State Current uA TC 125 ?C — — 200 VTM Peak On-State Voltage 1 ITM 1 A Peak — 12 17 V VAK 6 V RL 100ohm TC 25 ?C — — 200 IGT Gate Trigger Current 2 uA TC - 40 ?C — — 500 V D 7 V RL 100ohm TC 25 ?C — — 08 VGT Gate Trigger Voltage 2 V TC - 40 ?C — — 12 VGD Non-Trigger Gate Voltage 1 VAK 12 V RL 100ohmTC 125 ?C 02 — — V V D Rated VDRM Exponential wave form dvdt Critical Rate of RiseOff-State Voltage 20 35 — V uS R 1000ohm T 125?C GK J didt Critical Rate of RiseOff-State Voltage IPK 20A didt 1AuS Igt 20mA — — 50 AuS VAK 12V Gate OpenInitiating Curent 20mA TC 25?C — 2 50 IH Holding Current mA TC - 40 ?C — — 10 Notes 1 Pulse Width ?10 ms Duty cycle ? 1 2 Does not include RGKin measurement VOLTAGE CURRENT CHARACTERISTIC OF SCR PARAMETER SYMBOL Current Anode Peak Repetitive Off Stat ForwardVoltage VDRM VTM Peak ForwardBlocking Current IDRM On State IRRM at VRRM IH Peak Repetitive Off State ReverseVoltage VRRM Voltage Peak Reverse Blocking Current IRRM IDRM at VDRM Reverse Blocking Region off state Forward Blocking Peak On State Voltage VTM Region off state Reverse Avalanche Region Anode- Holding Current IH protekdevicescom 005 com 05081R11 211 Page 1 SCRTRIACs BT169D PP0640SA - PP3500SC PACKAGE MECHANICAL DATA Dimensions in Millimeters Dimensions in Inches Symbol Min Min A 33 37 013 0146 A1 11 14 0043 0055 b 034 055 0013 0022 b1 05 07 002 0028 C 034 054 0013 0021 D 433 483 017 019 E 433 483 017 019 e 127 TYP 005 TYP L 1407 1487 0554 0585 L1 1247 TYP 0491 TYP protekdevicescom 006 com 05081R11 211 Page 1 SCRTRIACs BT169G SENSITIVE GATE SILICON CONTROLLED RECTIFIERS A K DESCRIPTION G PNPN devices designed for high volume line-powered consumer applications such as relay and lamp drivers SCHEMATIC SYMBOL small motor controls gate drivers for larger thyristors and sensing and detection circuits FEATURES Sensitive gate allows triggering by micro controllers and other logic circuits Blocking voltage to 600V On-state current rating of 08A RMS at 80?C K High surge current capability – 10A G A Minimum and imum values of IGT VGT and IH specified for ease of design Immunity to dVdt – 20Vμsec minimum at 110?C TO-92 PACKAGE Glass-passivated surface for reliability and uniformity ABSOLUTE IMUM RATINGS TJ 25?C UNLESS OTHERWISE SPECIFIED Symbol Parameter Condition Ratings Units V DRM Repetitive Peak Off -State Voltage 600 V IT AV Average On-State Current Half SineWave TC 74 ?C 05 A IT RMS com-State Current All Conduction Angle 08 A ITSM Surge On-State Current 12 Cycle60HzSine Wave Non-Repetitive 10 A I2 2 t I t for Fusing t 83ms 0415 A2s PGM Forward Peak Gate Power Dissipation 01 W PG AV Forward Average Gate Power Dissipation 01 W IFGM ForwardPeak Gate Current 1 A V RGM Reverse Peak Gate Voltage 5 V TJ Operating Junction Temperature - 40 125 ?C TSTG Storage Temperature - 40 125 ?C THERMAL RESISTANCES Symbol Parameter Value Unit Rth j-c Junction to Case TO-92 70 ?CW Rth j-a Junction to Ambient TO-92 180 ?CW protekdevicescom 007 com 05081R11 211 Page 1 SCRTRIACs BT169G PP3500SC PP0640SA - ELECTRICAL CHARACTERISTICS TC 25 ?C UNLESS OTHERWISE NOTED Ratings Symbol Items Conditions Unit Min Typ VAK VDRM or VRRM RGK 1000ohm TC 25 ?C — — 10 IDRM Repetitive Peak Off-State Current uA TC 125 ?C — — 200 VTM Peak On-State Voltage 1 ITM 1 A Peak — 12 17 V VAK 6 V RL 100ohm TC 25 ?C — — 200 IGT Gate Trigger Current 2 uA TC - 40 ?C — — 500 V D 7 V RL 100ohm TC 25 ?C — — 08 VGT Gate Trigger Voltage 2 V TC - 40 ?C — — 12 VGD Non-Trigger Gate Voltage 1 VAK 12 V RL 100ohmTC 125 ?C 02 — — V V D Rated VDRM Exponential wave form dvdt Critical Rate of RiseOff-State Voltage 20 35 — V uS R 1000ohm T 125?C GK J didt Critical Rate of RiseOff-State Voltage IPK 20A didt 1AuS Igt 20mA — — 50 AuS VAK 12V Gate OpenInitiating Curent 20mA TC 25?C — 2 50 IH Holding Current mA TC - 40 ?C — — 10 Notes 1 Pulse Width ?10 ms Duty cycle ? 1 2 Does not include RGKin measurement VOLTAGE CURRENT CHARACTERISTIC OF SCR PARAMETER SYMBOL Current Anode Peak Repetitive Off Stat ForwardVoltage VDRM VTM Peak ForwardBlocking Current IDRM On State IRRM at VRRM IH Peak Repetitive Off State ReverseVoltage VRRM Voltage Peak Reverse Blocking Current IRRM IDRM at VDRM Reverse Blocking Region off state Forward Blocking Peak On State Voltage VTM Region off state Reverse Avalanche Region Anode- Holding Current IH protekdevicescom 008 com 05081R11 211 Page 1 SCRTRIACs BT169G PP0640SA - PP3500SC PACKAGE MECHANICAL DATA Dimensions in Millimeters Dimensions in Inches Symbol Min Min A 33 37 013 0146 A1 11 14 0043 0055 b 034 055 0013 0022 b1 05 07 002 0028 C 034 054 0013 0021 D 433 483 017 019 E 433 483 017 019 e 127 TYP 005 TYP L 1407 1487 0554 0585 L1 1247 TYP 0491 TYP protekdevicescom 009 com 05081R11 211 Page 1 SCRTRIACs BT169DS PP0640SA - PP3500SC SENSITIVE GATE SILICON CONTROLLED RECTIFIERS A K DESCRIPTION G PNPN devices designed for high volume line-powered consumer applications such as relay and lamp drivers SCHEMATIC SYMBOL small motor controls gate drivers for larger thyristors and sensing and detection circuits FEATURES A Sensitive gate allows triggering by micro controllers and other logic circuits Blocking voltage to 600V On-state current rating of 08A RMS at 80?C G High surge current capability – 10A K Minimum and imum values of IGT VGT and IH specified for ease of design Immunity to dVdt – 20Vμsec minimum at 110?C SOT-23 PACKAGE Glass-passivated surface for reliability and uniformity ABSOLUTE IMUM RATINGS TJ 25?C UNLESS OTHERWISE SPECIFIED Symbol Parameter Condition Ratings Units V DRM Repetitive Peak Off -State Voltage 6 00 V IT AV Average On-State Current Half SineWave TC 74 ?C 05 A IT RMS com-State Current All Conduction Angle 08 A ITSM Surge On-State Current 12 Cycle60HzSine Wave Non-Repetitive 10 A I2t I 2t for Fusing t 83ms 0415 A2s PGM Forward Peak Gate Power Dissipation 01 W PG AV Forward Average Gate Power Dissipation 01 W IFGM ForwardPeak Gate Current 1 A V RGM Reverse Peak Gate Voltage 5 V TJ Operating Junction Temperature - 40 125 ?C TSTG Storage Temperature - 40 125 ?C THERMAL RESISTANCES Symbol Parameter Value Unit Rth j-c Junction to Case SOT-23 60 ?CW Rth j-a Junction to Ambient SOT-23 15 0 ?CW protekdevicescom 010 com 05081R11 211 Page 1 SCRTRIACs BT169DS PP0640SA - PP3500SC ELECTRICAL CHARACTERISTICS TC 25 ?C UNLESS OTHERWISE NOTED Ratings Symbol Items Conditions Unit Min Typ VAK VDRM or VRRM RGK 1000ohm TC 25 ?C — — 10 IDRM Repetitive Peak Off-State Current uA TC 125 ?C — — 200 VTM Peak On-State Voltage 1 ITM 1 A Peak — 12 17 V VAK 6 V RL 100ohm TC 25 ?C — — 200 IGT Gate Trigger Current 2 uA TC - 40 ?C — — 500 V D 7 V RL 100ohm TC 25 ?C — — 08 VGT Gate Trigger Voltage 2 V TC - 40 ?C — — 12 VGD Non-Trigger Gate Voltage 1 VAK 12 V RL 100ohmTC 125 ?C 02 — — V V D Rated VDRM Exponential wave form dvdt Critical Rate of RiseOff-State Voltage 20 35 — V uS R 1000ohm T 125?C GK J didt Critical Rate of RiseOff-State Voltage IPK 20A didt 1AuS Igt 20mA — — 50 AuS VAK 12V Gate OpenInitiating Curent 20mA TC 25?C — 2 50 IH Holding Current mA TC - 40 ?C — — 10 tes 1 Pulse Width ?10 ms Duty cycle ? 1 No 2 Does not include RGKin measurement VOLTAGE CURRENT CHARACTERISTIC OF SCR PARAMETER SYMBOL Current Anode Peak Repetitive Off Stat ForwardVoltage VDRM VTM Peak ForwardBlocking Current IDRM On State IRRM at VRRM IH Peak Repetitive Off State ReverseVoltage VRRM Voltage Peak Reverse Blocking Current IRRM IDRM at VDRM Reverse Blocking Region off state Forward Blocking Peak On State Voltage VTM Region off state Reverse Avalanche Region Anode- Holding Current IH protekdevicescom 011 com 05081R11 211 Page 1 SCRTRIACs BT169DS PP0640SA - PP3500SC PACKAGE MECHANICAL DATA -23 SOT