IRF630B｜IRFS630B参数

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 IR F630B /IR FS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V • Low gate charge ( typical 22 nC) • Low Crss ( typical 22 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF630B IRFS630B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 9.0 9.0 * A - Continuous (TC = 100°C) 5.7 5.7 * A IDM Drain Current - Pulsed (Note 1) 36 36 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) 9.0 A EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 72 38 W - Derate above 25°C 0.57 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter IRF630B IRFS630B Units RθJC Thermal Resistance, Junction-to-Case Max. 1.74 3.33 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W TO-220 IRF SeriesG SD S D G TO-220F IRFS SeriesG SD Rev. B, December 2002 IR F630B /IR FS630B (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2002 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.2 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 10 µA VDS = 160 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A -- 0.34 0.4 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.5 A -- 7.05 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 550 720 pF Coss Output Capacitance -- 85 110 pF Crss Reverse Transfer Capacitance -- 22 29 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100 V, ID = 9.0 A, RG = 25 Ω -- 11 30 ns tr Turn-On Rise Time -- 70 150 ns td(off) Turn-Off Delay Time -- 60 130 ns tf Turn-Off Fall Time -- 65 140 ns Qg Total Gate Charge VDS = 160 V, ID = 9.0 A, VGS = 10 V -- 22 29 nC Qgs Gate-Source Charge -- 3.6 -- nC Qgd Gate-Drain Charge -- 10.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 9.0 A, dIF / dt = 100 A/µs -- 140 -- ns Qrr Reverse Recovery Charge -- 0.87 -- µC Rev. B, December 2002©2002 Fairchild Semiconductor Corporation IR F630B /IR FS630B 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 20V VGS = 10V ※ Note : TJ = 25℃ R D S( ON ) [ Ω ], Dr ain -S ou rce O n- Re sis tan ce ID, Drain Current [A] 2 4 6 8 10 10-1 100 101 150oC 25oC -55oC ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test I D, D ra in Cu rre nt [A ] VGS, Gate-Source Voltage [V] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 VDS = 100V VDS = 40V VDS = 160V ※ Note : ID = 9.0 A V G S, Ga te- So ur ce V olt ag e [ V] QG, Total Gate Charge [nC] 10-1 100 101 0 500 1000 1500 Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss Ciss Ca pa cit an ce [p F] VDS, Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ I DR , R ev er se D ra in Cu rre nt [A ] VSD, Source-Drain voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics 10-1 100 101 10-1 100 101 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ I D, D ra in Cu rre nt [A ] VDS, Drain-Source Voltage [V] ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 IR F630B /IR FS630B 100 101 102 10-2 10-1 100 101 102 100 µs 1 ms DC 100 ms 10 ms Operation in This Area is Limited by R DS(on) ※ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse I D, D ra in Cu rre nt [A ] VDS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 10 I D, D ra in Cu rre nt [A ] TC, Case Temperature [℃] 100 101 102 10-1 100 101 102 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse I D, D ra in Cu rre nt [A ] VDS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.5 A R D S( ON ) , ( No rm ali ze d) Dr ain -S ou rce O n- Re sis tan ce TJ, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA BV DS S , (N orm ali ze d) Dr ain -S ou rce B rea kd ow n V olt ag e TJ, Junction Temperature [ oC] Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for IRF630B Figure 10. Maximum Drain Current vs Case Temperature Figure 9-2. Maximum Safe Operating Area for IRFS630B Rev. B, December 2002©2002 Fairchild Semiconductor Corporation IR F630B /IR FS630B Typical Characteristics (Continued) 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -2 1 0 -1 1 0 0 ※ N o te s : 1 . Z θ JC( t) = 1 .74 ℃ /W M a x . 2 . D u ty Fa c to r, D = t1/t2 3 . T JM - T C = P D M * Z θ JC( t) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ JC (t ), T h e rm a l R e sp o n se t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-1. Transient Thermal Response Curve for IRF630B t1 PDM t2 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -2 1 0 -1 1 0 0 ※ N o te s : 1 . Z θ JC( t) = 3 .33 ℃ /W M a x . 2 . D u ty Fa c to r, D = t1/t2 3 . T JM - T C = P D M * Z θ JC( t) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ JC( t) , T h e rm a l R e sp o n se t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for IRFS630B t1 PDM t2 Rev. B, December 2002©2002 Fairchild Semiconductor Corporation IR F630B /IR FS630B Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS EAS = L IAS2----2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p EAS = L IAS2----2 1EAS = L IAS2----2 1---- 2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL I DI D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 IR F630B /IR FS630B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Same Type as DUT VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period -------------------------- DUT VDS + _ Driver RG Same Type as DUT VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------D = Gate Pulse Width Gate Pulse Period -------------------------- Rev. B, December 2002©2002 Fairchild Semiconductor Corporation IR F630B /IR FS630B Package Dimensions 4.50 ±0.209.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2. 80 ±0 .1 0 15 .9 0 ±0 .2 0 10 .0 8 ±0 .3 0 18 .9 5M AX . (1. 70 ) (3. 70 ) (3. 00 ) (1. 46 ) (1. 00 ) (45 °) 9. 20 ±0 .2 0 13 .0 8 ±0 .2 0 1. 30 ±0 .1 0 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 Dimensions in Millimeters Rev. B, December 2002©2002 Fairchild Semiconductor Corporation IR F630B /IR FS630B Package Dimensions (Continued) Dimensions in Millimeters (7.00) (0.70) MAX1.47 (30 °) #1 3. 30 ±0 .1 0 15 .8 0 ±0 .2 0 15 .8 7 ±0 .2 0 6. 68 ±0 .2 0 9. 75 ±0 .3 0 4. 70 ±0 .2 0 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50 +0.10 –0.05 TO-220F ©2002 Fairchild Semiconductor Corporation DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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