WSR98P06 -60V-132A

SymbolParameterRatingUnitsVDSDrain-SourceVoltage-60VVGSGate-SourceVoltage卤25VIDContinuousDrainCurrent,VGS@-10V;TC=25掳C-132AContinuousDrainCurrent,VGS@-10V;TC=100掳C-83AIsDiodeContinuousForwardCurrent-80AIASAvalancheEnergy,Singlepulse;L=1mH49AEASAvalancheEnergy,Singlepulse;;L=1mH1200AIDPPulseDrainCurrentTested;Tc=25掳C-264mJPDMaximumPowerDissipation;TC=25掳C250W100WTSTGStorageTemperatureRange-55to150鈩�TJOperatingJunctionTemperatureRange-55to150鈩�SymbolParameterTyp.Max.UnitR胃JAThermalResistanceJunction-Ambient1---55鈩�WR胃JAThermalResistanceJunction-Ambient1(t鈮�0s)---20鈩�WR胃JCThermalResistanceJunction-Case1---0.5鈩�WBVDSSRDSONID-60V5.2m鈩�-132AAdvancedhighcelldensityTrenchtechnologySuperLowGateChargeExcellentCdV/dteffectdecline100%EASGuaranteedGreenDeviceAvailableGeneralDescriptionFeaturesApplicationsPowerManagementinDesktopComputerorDC/DCConvertersAbsoluteMaximumRatingsThermalDataTO-220ABPinConfigurationProductSummeryWSR98P06P-ChMOSFETPage1www.winsok.twDec.2014TheWSR98P06isthehighestperformancetrenchP-ChMOSFETwithextremehighcelldensity,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverterapplications.TheWSR98P06meettheRoHSandGreenProductrequirement,100%EASguaranteedwithfullfunctionreliabilityapproved.MaximumPowerDissipation;TC=100掳CNote锛�Currentlimitedbybondwire.Notea锛歎IStestedandpulsewidthlimitedbymaximumjunctiontemperature150鈩�(initialtemperatureTj=25鈩�.DGSSymbolParameterConditionsMin.Typ.Max.UnitBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=-250uA-60------V鈻矪VDSS/鈻砊JBVDSSTemperatureCoefficientReferenceto25鈩�,ID=-1mA----0.018---V/鈩�RDS(ON)StaticDrain-SourceOn-Resistance2VGS=-10V,ID=-20A---5.26.5m惟VGS=-4.5V,ID=-10A---8.511.5VGS(th)GateThresholdVoltageVGS=VDS,ID=-250uA-1.3-1.8-2.5V鈻砎GS(th)VGS(th)TemperatureCoefficient---5.04---mV/鈩�IDSSDrain-SourceLeakageCurrentVDS=-48V,VGS=0V,TJ=25鈩�------1uAVDS=-48V,VGS=0V,TJ=55鈩�------5IGSSGate-SourceLeakageCurrentVGS=卤25V,VDS=0V------卤100nAgfsForwardTransconductanceVDS=-5V,ID=-20A---26.4---SQgTotalGateCharge(-4.5V)VDS=-30V,VGS=-4.5V,ID=-20A---136---nCQgsGate-SourceCharge---20---QgdGate-DrainCharge---33---Td(on)Turn-OnDelayTimeVDD=-15V,VGS=-10V,RG=3.3惟,ID=-20A---18---nsTrRiseTime---20---Td(off)Turn-OffDelayTime---200---TfFallTime---120---CissInputCapacitanceVDS=-15V,VGS=0V,f=1MHz---6095---pFCossOutputCapacitance---1080---CrssReverseTransferCapacitance---430---SymbolParameterConditionsMin.Typ.Max.UnitISContinuousSourceCurrent1,6VG=VD=0V,ForceCurrent-------80AISMPulsedSourceCurrent2,6-------160AVSDDiodeForwardVoltage2VGS=0V,IS=-1A,TJ=25鈩�-------1.2VtrrReverseRecoveryTime---30---nSQrrReverseRecoveryChargeIF=-20A,dI/dt=100A/碌s,TJ=25鈩�---20---nCNote:1.Thedatatestedbysurfacemountedona1inch2FR-4boardwith2OZcopper,t<10sec.2.Thedatatestedbypulsed,pulsewidth鈮�300us,dutycycle鈮�2%3.TheEASdatashowsMax.rating.ThetestconditionisVDD=-25V,VGS=-10V,L=0.1mH,IAS=-30A4.Thepowerdissipationislimitedby150鈩�junctiontemperature5.TheMin.valueis100%EAStestedguarantee.6.ThedataistheoreticallythesameasIDandIDM,inrealapplications,shouldbelimitedbytotalpowerdissipation.ElectricalCharacteristics(TJ=25鈩�unlessotherwisenoted)DiodeCharacteristicsWSR98P06P-ChMOSFETPage2www.winsok.twDec.2014TypicalCharacteristicsWSR98P06P-ChMOSFETPage3www.winsok.twDec.2014-ID-DrainCurrent(A)DrainCurrentTj-JunctionTemperature(掳C)SafeOperationArea-VDS-Drain-SourceVoltage(V)ThermalTransientImpedanceSquareWavePulseDuration(sec)PowerDissipationPtot-Power(W)Tj-JunctionTemperature(掳C)-ID-DrainCurrent(A)NormalizedTransientThermalResistance020406080100120140160050100150200250300TC=25oC0204060801001201401600255075100125150TC=25oC,VG=-10V0.010.111010050011010080010ms1msDCRds(on)LimitTC=25oC1E-61E-51E-41E-30.010.111E-41E-30.010.112R胃JC:0.5oC/W0.010.020.050.10.2SinglePulseDuty=0.5WSR98P06P-ChMOSFETPage4www.winsok.twDec.2014RDS(ON)-On-Resistance(m鈩�)Drain-SourceOnResistance-ID-DrainCurrent(A)Tj-JunctionTemperature(掳C)GateThresholdVoltage-VDS-Drain-SourceVoltage(V)-ID-DrainCurrent(A)OutputCharacteristics-VGS-Gate-SourceVoltage(V)NormalizedThresholdVoltageGate-SourceOnResistanceRDS(ON)-OnResistance(m鈩�)01234502550751001251501752003V4V3.5VVGS=4.5,5,6,7,8,9,10V04080120160200024681012VGS=10V2345678910051015202530IDS=-20A-50-2502550751001251500.20.40.60.81.01.21.41.6IDS=-250碌ATypicalCharacteristicsWSR98P06P-ChMOSFETPage5www.winsok.twDec.2014TypicalCharacteristics-VDS-Drain-SourceVoltage(V)Drain-SourceOnResistanceNormalizedOnResistance-50-250255075100125150Tj-JunctionTemperature(掳C)C-Capacitance(pF)-VSD-Source-DrainVoltage(V)Source-DrainDiodeForward-IS-SourceCurrent(A)CapacitanceGateChargeQG-GateCharge(nC)-VGS-Gate-sourceVoltage(V)0.20.40.60.81.01.21.41.61.82.02.2RON@Tj=25oC:5.6m鈩�VGS=-10VIDS=-20A0.00.20.40.60.81.01.21.40.1110100200Tj=150oCTj=25oC0816243240010002000300040005000600070008000900010000Frequency=1MHzCrssCossCiss020406080100120140012345678910VDS=-30VIDS=-20AAttention1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplicationsthatrequireextremelyhighlevelsofreliability,suchaslifesupportsystems,aircraft'scontrolsystems,orotherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedorcontainedhereininsuchapplications.2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedinproductsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein.3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance,characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesoftheperformance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer鈥檚productsorequipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalwaysevaluateandtestdevicesmountedinthecustomer鈥檚productsorequipment.4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighqualityhighreliabilityproducts.However,anyandallsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidentsoreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign,andstructuraldesign.5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinarecontrolledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw.6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical,includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withoutthepriorwrittenpermissionofWinsokpowerSemiconductorCO.,LTD.7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedforvolumeproduction.Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeorimpliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties.8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technologyimprovement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyouIntendtouse.9,thiscatalogprovidesinformationasofSep.2014.Specificationsandinformationhereinaresubjecttochangewithoutnotice.