WSR80N10 100V85A

SymbolParameterRatingUnitsVDSDrain-SourceVoltage100VVGSGate-SourceVoltage卤25VID@TC=25鈩�ContinuousDrainCurrent,VGS@10V185AID@TC=100鈩�ContinuousDrainCurrent,VGS@10V165AID@TA=25鈩�ContinuousDrainCurrent,VGS@10V110AID@TA=70鈩�ContinuousDrainCurrent,VGS@10V18.2AIDMPulsedDrainCurrent2,TC=25掳C200AEASAvalancheEnergy,Singlepulse,L=0.5mH189mJIASAvalancheCurrent,Singlepulse,L=0.5mH28APD@TC=25鈩�TotalPowerDissipation4150WPD@TC=100鈩�TotalPowerDissipation475WTSTGStorageTemperatureRange-55to150鈩�TJOperatingJunctionTemperatureRange150鈩�SymbolParameterTyp.Max.UnitR胃JAThermalResistanceJunction-Ambient1---50鈩�WR胃JCThermalResistanceJunction-Case1---1.1鈩�WBVDSSRDSONID100V10m鈩�85AAdvancedhighcelldensityTrenchtechnologySuperLowGateChargeExcellentCdV/dteffectdecline100%EASGuaranteedGreenDeviceAvailableGeneralDescriptionFeaturesApplicationsPowerManagementinTVConverter.DC-DCConverterLEDTVBackLightAbsoluteMaximumRatingsThermalDataTO-220ABPinConfigurationProductSummeryN-ChMOSFETWSR80N10Page1www.winsok.twDec.2014TheWSR80N10isthehighestperformancetrenchN-ChMOSFETwithextremehighcelldensity,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverterapplications.TheWSR80N10meettheRoHSandGreenProductrequirement,100%EASguaranteedwithfullfunctionreliabilityapproved.DGSSymbolParameterConditionsMin.Typ.Max.UnitBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250uA100------V鈻矪VDSS/鈻砊JBVDSSTemperatureCoefficientReferenceto25鈩�,ID=1mA---0.096---V/鈩�RDS(ON)StaticDrain-SourceOn-Resistance2VGS=10V,ID=30A---13m惟VGS(th)GateThresholdVoltageVGS=VDS,ID=250uA2.03.04.0V鈻砎GS(th)VGS(th)TemperatureCoefficient----5.5---mV/鈩�IDSSDrain-SourceLeakageCurrentVDS=80V,VGS=0V,TJ=25鈩�------1uAVDS=80V,VGS=0V,TJ=55鈩�------5IGSSGate-SourceLeakageCurrentVGS=卤20V,VDS=0V------卤100nAgfsForwardTransconductanceVDS=5V,ID=30A---27---SRgGateResistanceVDS=0V,VGS=0V,f=1MHz---1.01.8惟QgTotalGateCharge(10V)VDS=80V,VGS=10V,ID=30A---42---nCQgsGate-SourceCharge---12---QgdGate-DrainCharge---12---Td(on)Turn-OnDelayTimeVDD=50V,VGS=10V,RG=3惟,ID=1A---19---nsTrRiseTime---9---Td(off)Turn-OffDelayTime---36---TfFallTime---22---CissInputCapacitanceVDS=15V,VGS=0V,f=1MHz---2100---pFCossOutputCapacitance---255---CrssReverseTransferCapacitance---100---SymbolParameterConditionsMin.Typ.Max.UnitEASSinglePulseAvalancheEnergy5VDD=25V,L=0.5mH,IAS=28A160------mJSymbolParameterConditionsMin.Typ.Max.UnitISContinuousSourceCurrent1,6VG=VD=0V,ForceCurrent------35AISMPulsedSourceCurrent2,6------60AVSDDiodeForwardVoltage2VGS=0V,IS=15A,TJ=25鈩�------1.3VtrrReverseRecoveryTimeIF=15A,dI/dt=100A/碌s,TJ=25鈩�---42---nSQrrReverseRecoveryCharge---90---nCNote:1.Thedatatestedbysurfacemountedona1inch2FR-4boardwith2OZcopper,t<10sec.2.Thedatatestedbypulsed,pulsewidth鈮�300us,dutycycle鈮�2%3.TheEASdatashowsMax.rating.ThetestconditionisVDS=25V,VGS=10V,L=0.5mH,IAS=26A4.Thepowerdissipationislimitedby150鈩�junctiontemperature5.TheMin.valueis100%EAStestedguarantee.6.ThedataistheoreticallythesameasIDandIDM,inrealapplications,shouldbelimitedbytotalpowerdissipation.GuaranteedAvalancheCharacteristicsDiodeCharacteristicsElectricalCharacteristics(TJ=25鈩�unlessotherwisenoted)N-ChMOSFETWSR80N10Page2www.winsok.twDec.201410N-ChMOSFETWSR80N10Page2www.winsok.twDec.2014TypicalOperatingCharacteristicsPowerDissipationPtot-Power(W)Tj-JunctionTemperature(掳C)DrainCurrentTj-JunctionTemperatureID-DrainCurrent(A)ThermalTransientImpedanceNormalizedTransientThermalResistanceSquareWavePulseDuration(sec)SafeOperationAreaVDS-Drain-SourceVoltage(V)ID-DrainCurrent(A)020406080100120140160020406080100120TC=25oC1E-61E-51E-41E-30.010.11E-41E-30.010.112R胃JC:1.1oC/W0.010.020.050.10.2SinglePulseDuty=0.5020406080100120140160010203040506070TC=25oC,VG=10V0.11101005000.111010060010ms100碌sDC1msRds(on)LimitTC=25oCN-ChMOSFETWSR80N10Page4www.winsok.twDec.2014VDS-Drain-SourceVoltage(V)ID-DrainCurrent(A)OutputCharacteristicsRDS(ON)-On-Resistance(m鈩�)Drain-SourceOnResistanceID-DrainCurrent(A)Gate-SourceOnResistanceVGS-Gate-SourceVoltage(V)RDS(ON)-On-Resistance(m鈩�)-50-250255075100125150Tj-JunctionTemperature(掳C)GateThresholdVoltageNormalizedThresholdVoltageTypicalOperatingCharacteristics(Cont.)01234560204060801001205.5V4.5V5VV=7,8,9,10V6VGS0.20.40.60.81.01.21.41.6IDS=250碌A020406080100051015202530VGS=10V4567891010152025303540IDS=25AN-ChMOSFETWSR80N10Page5www.winsok.twDec.2014TypicalOperatingCharacteristics(Cont.)NormalizedOnResistanceTj-JunctionTemperature(掳C)VSD-Source-DrainVoltage(V)Source-DrainDiodeForwardIS-SourceCurrent(A)VDS-Drain-SourceVoltage(V)C-Capacitance(pF)CapacitanceGateChargeQG-GateCharge(nC)VGS-Gate-sourceVoltage(V)0.00.20.40.60.81.01.21.40.1110100Tj=150oCTj=25oC08162432400400800120016002000240028003200Frequency=1MHzCrssCossCiss071421283542012345678910VDS=50VIDS=30A-50-2502550751001251500.00.51.01.52.02.5RON@Tj=25oC:14m鈩�Drain-SourceOnResistanceVGS=10VIDS=25AN-ChMOSFETWSR80N10Page6www.winsok.twDec.2014A2LL1ePQDH1AA1cD1E1D2bb2E/2ESYMBOLMIN.MAX.4.830.511.141.780.360.6114.2216.511.4012.19AA1b2cDD1D2EMILLIMETERSb0.381.02TO-2209.6510.676.86MIN.MAX.INCHES0.1900.0200.0150.0400.0450.0700.0140.0240.5600.6500.4800.3800.4200.2703.560.1400.055E10.3558.389.020.3302.03A22.920.0800.11513.650.5370.3508.89RECOMMENDEDLANDPATTERNUNIT:mm2.54R0.522.54BSC0.100BSC0.2500.580PLL1e12.706.3514.730.500QH15.846.860.2300.2704.090.1613.530.1392.543.430.1000.135PackageInformationTO-220ABAttention1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplicationsthatrequireextremelyhighlevelsofreliability,suchaslifesupportsystems,aircraft'scontrolsystems,orotherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedorcontainedhereininsuchapplications.2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedinproductsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein.3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance,characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesoftheperformance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer鈥檚productsorequipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalwaysevaluateandtestdevicesmountedinthecustomer鈥檚productsorequipment.4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighqualityhighreliabilityproducts.However,anyandallsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidentsoreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign,andstructuraldesign.5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinarecontrolledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw.6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical,includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withoutthepriorwrittenpermissionofWinsokpowerSemiconductorCO.,LTD.7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedforvolumeproduction.Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeorimpliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties.8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technologyimprovement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyouIntendtouse.9,thiscatalogprovidesinformationasofSep.2014.Specificationsandinformationhereinaresubjecttochangewithoutnotice.