WSR200N08 80V200A 173W

SymbolParameterRatingUnitsVDSDrain-SourceVoltage80VVGSGate-SourceVoltage卤25VID@TC=25鈩�ContinuousDrainCurrent,VGS@10V1200AID@TC=100鈩�ContinuousDrainCurrent,VGS@10V1144AIDMPulsedDrainCurrent2,TC=25掳C790AEASAvalancheEnergy,Singlepulse,L=0.5mH1496mJIASAvalancheCurrent,Singlepulse,L=0.5mH200APD@TC=25鈩�TotalPowerDissipation4345WPD@TC=100鈩�TotalPowerDissipation4173WTSTGStorageTemperatureRange-55to175鈩�TJOperatingJunctionTemperatureRange175鈩�SymbolParameterTyp.Max.UnitR胃JAThermalResistanceJunction-Ambient1---62.5鈩�WR胃JCThermalResistanceJunction-Case1---0.43鈩�WBVDSSRDSONID80V2.9m鈩�200AAdvancedhighcelldensityTrenchtechnologySuperLowGateChargeExcellentCdV/dteffectdecline100%EASGuaranteedGreenDeviceAvailableGeneralDescriptionFeaturesApplicationsAbsoluteMaximumRatingsThermalDataTO-220FB-3LPinConfigurationProductSummeryN-ChMOSFETWSR200N08Page1www.winsok.twDec.2014TheWSR200N08isthehighestperformancetrenchN-ChMOSFETwithextremehighcelldensity,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverterapplications.TheWSR200N08meettheRoHSandGreenProductrequirement,100%EASguaranteedwithfullfunctionreliabilityapproved.DGSGSDPowerManagementforInverterSystems.SwitchingapplicationSymbolParameterConditionsMin.Typ.Max.UnitBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250uA80------V鈻矪VDSS/鈻砊JBVDSSTemperatureCoefficientReferenceto25鈩�,ID=1mA---0.096---V/鈩�RDS(ON)StaticDrain-SourceOn-Resistance2VGS=10V,ID=100A---3.5m惟VGS(th)GateThresholdVoltageVGS=VDS,ID=250uA2.03.04.0V鈻砎GS(th)VGS(th)TemperatureCoefficient----5.5---mV/鈩�IDSSDrain-SourceLeakageCurrentVDS=80V,VGS=0V,TJ=25鈩�------1uAVDS=80V,VGS=0V,TJ=55鈩�------10IGSSGate-SourceLeakageCurrentVGS=卤25V,VDS=0V------卤100nARgGateResistanceVDS=0V,VGS=0V,f=1MHz---3.2---惟QgTotalGateCharge(10V)VDS=80V,VGS=10V,ID=30A---197---nCQgsGate-SourceCharge---31---QgdGate-DrainCharge---75---Td(on)Turn-OnDelayTimeVDD=50V,VGS=10V,RG=3惟,ID=30A---28---nsTrRiseTime---18---Td(off)Turn-OffDelayTime---42---TfFallTime---54---CissInputCapacitanceVDS=15V,VGS=0V,f=1MHz---8154---pFCossOutputCapacitance---1029---CrssReverseTransferCapacitance---650---SymbolParameterConditionsMin.Typ.Max.UnitEASSinglePulseAvalancheEnergy5VDD=25V,L=0.5mH,IAS=28A160------mJSymbolParameterConditionsMin.Typ.Max.UnitISContinuousSourceCurrent1,6VG=VD=0V,ForceCurrent------200AISMPulsedSourceCurrent2,6------350AVSDDiodeForwardVoltage2VGS=0V,IS=15A,TJ=25鈩�------1.2VtrrReverseRecoveryTimeIF=15A,dI/dt=100A/碌s,TJ=25鈩�---30---nSQrrReverseRecoveryCharge---52---nCGuaranteedAvalancheCharacteristicsDiodeCharacteristicsElectricalCharacteristics(TJ=25鈩�unlessotherwisenoted)N-ChMOSFETWSR200N08Page2www.winsok.twDec.20142.9Note*:Pulsetest;pulsewidth鈮�00碌s,dutycycle鈮�%.N-ChMOSFETWSR200N08Page2www.winsok.twDec.2014TypicalOperatingCharacteristicsTc-CaseTemperature(掳C)SafeOperationAreaVDS-Drain-SourceVoltage(V)ID-DrainCurrent(A)0.010.11101003000.1110100100010ms100us1msDCRds(on)LimitTC=25oCID-DrainCurrent(A)DrainCurrent0204060801001201401601802000255075100125150175200TC=25oC,VG=10VlimitedbypackagePowerDissipationPtot-Power(W)020406080100120140160180200050100150200250300350TC=25oC225Tc-CaseTemperature(掳C)0.00010.0010.010.11100.00010.0010.010.1ThermalTransientImpedanceSquareWavePulseDuration(sec)NormalizedEffectiveTransient10.010.020.050.10.2Duty=0.5MountedonminimumpadR胃JA:62.5oC/WSingleN-ChMOSFETWSR200N08Page4www.winsok.twDec.2014TypicalOperatingCharacteristics(Cont.)200VDS-Drain-SourceVoltage(V)ID-DrainCurrent(A)OutputCharacteristicsTj-JunctionTemperature(掳C)GateThresholdVoltageNormalizedThresholdVoltageVGS-Gate-SourceVoltage(V)RDS(ON)-On-Resistance(m鈩�)Drain-SourceOnResistanceID-DrainCurrent(A)RDS(ON)-On-Resistance(m鈩�)Gate-SourceOnResistance0.01.02.03.04.05.06.0040804V5V4.5VVGS=5.5,6,7,8,9,10V0501001502002502.02.53.03.54.04.55.01.5VGS=10V34567891002468101214IDS=100A120160240280320-50-2502550751001251501750.20.40.60.81.01.21.41.6IDS=250碌AN-ChMOSFETWSR200N08Page5www.winsok.twDec.2014TypicalOperatingCharacteristics(Cont.)ce40VSD-Source-DrainVoltage(V)Source-DrainDiodeForwardIS-SourceCurrent(A)Drain-SourceOnResistanNormalizedOnResistanceTj-JunctionTemperature(掳C)GateChargeQG-GateCharge(nC)VGS-Gate-sourceVoltage(V)0.00.20.40.60.81.01.21.40.1110100200Tj=175oCTj=25oC080120160200012345678910VDS=64VIDS=100A6000VDS-Drain-SourceVoltage(V)C-Capacitance(pF)Capacitance081624324001500300045007500900010500Frequency=1MHzCrssCossCiss12000-50-2502550751001251501750.20.40.60.81.01.21.41.61.82.02.22.4RON@Tj=25oC:2.9m鈩�VGS=10V100AIDS=N-ChMOSFETWSR200N08Page6www.winsok.twDec.2014PackageInformationTO-220ABTO-220FB-3LSYMBOLMINNOMMAXMINNOMMAXA4.404.574.700.1730.1800.185A11.271.301.330.0500.0510.052A22.352.402.500.0930.0940.098b0.770.800.900.0300.0310.035b21.171.271.360.0460.0500.054c0.480.500.560.0190.0200.022D15.4015.6015.800.6060.6140.622D19.009.109.200.3540.3580.362DEP0.050.100.200.0020.0040.008E9.8010.0010.200.3860.3940.402E1-8.70--0.343-E29.8010.0010.200.3860.3940.402e2.54BSC0.100BSCe15.08BSC0.200BSCH16.406.506.600.2520.2560.260L12.7513.5013.650.5020.5310.537L1-3.103.30-0.1220.130L22.50REF0.098REFP3.503.603.630.1380.1420.143P13.503.603.630.1380.1420.143Q2.732.802.870.1070.1100.113胃15掳7掳9掳5掳7掳9掳胃21掳3掳5掳1掳3掳5掳胃31掳3掳5掳1掳3掳5掳Attention1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplicationsthatrequireextremelyhighlevelsofreliability,suchaslifesupportsystems,aircraft'scontrolsystems,orotherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedorcontainedhereininsuchapplications.2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedinproductsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein.3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance,characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesoftheperformance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer鈥檚productsorequipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalwaysevaluateandtestdevicesmountedinthecustomer鈥檚productsorequipment.4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighqualityhighreliabilityproducts.However,anyandallsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidentsoreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign,andstructuraldesign.5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinarecontrolledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw.6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical,includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withoutthepriorwrittenpermissionofWinsokpowerSemiconductorCO.,LTD.7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedforvolumeproduction.Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeorimpliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties.8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technologyimprovement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyouIntendtouse.9,thiscatalogprovidesinformationasofSep.2014.Specificationsandinformationhereinaresubjecttochangewithoutnotice.