DTS2315datasheet

1 P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Power Management for Portable and Consumer - Load Switches - DC/DC Converters Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) - 20 0.065 at VGS = - 4.5 V - 4.5 13.8 nC0.090 at VGS = - 2.5 V - 3.7 0.1175 at VGS = - 1.8 V - 3.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 VGate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 4.5 A TC = 70 °C - 3.7 TA = 25 °C - 3.5b, c TA = 70 °C - 2.6b, c Pulsed Drain Current (t = 300 µs) IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 1.4 TA = 25 °C - 1b, c Maximum Power Dissipation TC = 25 °C PD 1.7 WTC = 70 °C 1.1TA = 25 °C 1b, c TA = 70 °C 0.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t  5 s RthJA 100 130 °C/WMaximum Junction-to-Foot (Drain) Steady State RthJF 60 75 S G D P-Channel MOSFET G TO-236 (SOT-23) S D Top View 2 3 1 DTS2315 Administrator 附注 原厂代理商 深圳森利威尔电子有限公司 联系人：黄先生 手机：13760325070 QQ：2355368872 欢迎咨询,竭诚服务 2 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 14 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ 2.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 10 µA VDS = 0 V, VGS = ± 4.5 V ± 1 Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 4 A 0.0465 0.0650 VGS = - 2.5 V, ID = - 4 A 0.0740 0.0900 VGS = - 1.8 V, ID = - 2 A 0.1135 0.1175 Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 12 V, ID = - 4.5 A 23.8 36 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A 13.8 21 Gate-Source Charge Qgs 1.9 Gate-Drain Charge Qgd 3 Gate Resistance Rg f = 1 MHz 2.2 11 22  Turn-On Delay Time td(on) VDD = - 10 V, RL = 2.8  ID  - 3.6 A, VGEN = - 4.5 V, Rg = 1  22 33 ns Rise Time tr 21 32 Turn-Off Delay Time td(off) 62 93 Fall Time tf 14 21 Turn-On Delay Time td(on) VDD = - 10 V, RL = 2.8  ID  - 3.6 A, VGEN = - 8 V, Rg = 1  9 18 Rise Time tr 6 12 Turn-Off Delay Time td(off) 65 98 Fall Time tf 15 23 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 1.4 A Pulse Diode Forward Current ISM - 20 Body Diode Voltage VSD IS = - 3.6 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 3.6 A, dI/dt = 100 A/µs, TJ = 25 °C 13 20 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 5 DTS2315 3 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Current vs. Gate-Source Voltage Output Characteristics On-Resistance vs. Drain Current 0.000 0.010 0.020 0.030 0.040 0.050 0 3 6 9 12 15 I G S S - G at e C ur re nt (m A ) VGS - Gate-Source Voltage (V) TJ = 25 °C 0 3 6 9 12 15 0 0.5 1 1.5 2 I D - D ra in C ur re nt ( A ) VDS - Drain-to-Source Voltage (V) VGS = 1.5 V VGS = 8 V thru 2 V VGS = 1 V 0 0.02 0.04 0.06 0.08 0.1 0 5 10 15 20 R D S (o n) - O n- R es is ta nc e (Ω ) ID - Drain Current (A) VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V Gate Current vs. Gate-Source Voltage Transfer Characteristics Capacitance 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 0 4 8 12 16 20 I G S S - G at e C ur re nt (A ) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C 0 0.1 0.2 0.3 0.4 0.5 0 0.35 0.7 1.05 1.4 I D - D ra in C ur re nt ( A ) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 500 1000 1500 2000 0 5 10 15 20 C - C ap ac ita nc e (p F) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss DTS2315 4 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Charge Single Pulse Power, Junction-to-Ambient Soure-Drain Diode Forward Voltage 0 2 4 6 8 0 5 10 15 20 25 V G S - G at e- to -S ou rc e V ol ta ge (V ) Qg - Total Gate Charge (nC) VDS = 16 V VDS = 5 V VDS = 10 V ID = 4.5 A 0 10 20 30 0.001 0.01 0.1 1 10 100 Time (s) Po w e r (W ) 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 I S - S ou rc e C ur re nt ( A ) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C On-Resistance vs. Junction Temperature Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 R D S (o n) - O n- R es is ta nc e (N or m al iz ed ) TJ - Junction Temperature (°C) ID = 4 A VGS = 4.5 V VGS = 2.5 V 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 V G S (th ) ( V ) TJ - Temperature (°C) ID = 250 μA 0.000 0.020 0.040 0.060 0.080 0 2 4 6 8 R D S (o n) - O n- R es is ta nc e (Ω ) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 4 A DTS2315 5 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Safe Operating Area, Junction-to-Ambient Power Junction-to-Case 0.001 0.01 0.1 1 10 100 0.1 1 10 100 I D - D ra in C ur re nt ( A ) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 10 s, 1 s DC 0 0.5 1 1.5 2 0 25 50 75 100 125 150 P o w er (W ) TC - Case Temperature (°C) Current Derating* Power Junction-to-Ambient 0 1.4 2.8 4.2 5.6 7 0 25 50 75 100 125 150 I D - D ra in C ur re nt ( A ) TC - Case Temperature (°C) 0.0 0.2 0.4 0.5 0.7 0.9 0 25 50 75 100 125 150 P ow er (W ) TA - Ambient Temperature (°C) DTS2315 6 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 000101110-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) N o rm a liz ed Ef fe ct ive Tr a n si en t Th er m al Im pe da nc e 1 0.1 0.01 Duty Cycle = 0.5 Single Pulse 0.02 0.05 0.001 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Foot 1 0.1 0.01 0.2 Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz ed Ef fe ct ive Tr a n si en t Th er m al Im pe da nc e Single Pulse 0.1 10-3 10-2 110-110-4 0.02 0.05 DTS2315 1 SOT-23 (TO-236): 3-LEAD b EE1 1 3 2 S e e1 D A2A A1 C Seating Plane 0.10 mm 0.004" C C L1 L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3° 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Package Information � 1 A P P L IC A T IO N N O T E RECOMMENDED MINIMUM PADS FOR SOT-23 0. 10 6 (2. 69 2) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0. 04 9 (1. 24 5) 0. 02 9 (0. 72 4) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to IndexReturn to Index Application Note