DTQ3115datasheet

1 P-Channel 1.8 V (G-S) MOSFET FEATURES • Halogen-free according to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Small DFN3x3 Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • PA Switch • Battery Switch • Load Switch Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. e. In this document, any reference to the Case represents the body of the DFN2X2 device and Foot is the bump. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a Qg (Typ.) - 12 0.015 at VGS = - 4.5 V - 14.5 35 nC0.019 at VGS = - 2.5 V - 13.0 0.023 at VGS = - 1.8 V - 11.5 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 14.5 A TC = 70 °C - 12.7 TA = 25 °C - 10.7b, c TA = 70 °C - 8.7b, c Pulsed Drain Current IDM - 25 Continuous Source-Drain Diode Current TC = 25 °C IS - 6.7 TA = 25 °C - 3.5b, c Maximum Power Dissipation TC = 25 °C PD 6.87 W TC = 70 °C 4.6 TA = 25 °C 2.9b, c TA = 70 °C 1.96b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Package Reflow Conditionsd IR/Convection 260 DTQ3115 Top View 1 2 3 4 8 7 6 5 Pin Description S S S G D D D D DDD D SS SG DFN3x3-8(punch type) Top View Bottom View Top View Bottom View DFN3x3-8(saw type) Administrator 附注 原厂代理商 深圳森利威尔电子有限公司 联系人：黄先生 手机：13760325070 QQ：2355368872 欢迎咨询,竭诚服务 2 Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 72 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b RthJA 31 42 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 12 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 13.3 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 2.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.75 - 0.9 V Gate-Source Leakage IGSS VDS = 0 V, VGS = 5 V - 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µA VDS = - 12 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 1 A 0.014 0.015 VGS = - 2.5 V, ID = - 1 A 0.017 0.019 VGS = - 1.8 V, ID = - 1 A 0.021 0.023 Forward Transconductancea gfs VDS = - 4 V, ID = - 1 A 8.3 S Dynamicb Input Capacitance Ciss VDS = - 6 V, VGS = 0 V, f = 1 MHz 2220 pFOutput Capacitance Coss 865 Reverse Transfer Capacitance Crss 555 Total Gate Charge Qg VDS = - 6 V, VGS = - 5 V, ID = - 1 A 38 57 nC VDS = - 6 V, VGS = - 4.5 V, ID = - 1 A 35 53 Gate-Source Charge Qgs 7.3 Gate-Drain Charge Qgd 5.9 Gate Resistance Rg VGS = - 0.1 V, f = 1 MHz 28  Turn-On Delay Time td(on) VDD = - 6 V, RL = 4  ID  - 1 A, VGEN = - 4.5 V, Rg = 6  14 21 ns Rise Time tr 25 40 Turn-Off Delay Time td(off) 380 570 Fall Time tf 240 360 DTQ3115 3 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 6.5 A Pulse Diode Forward Current ISM - 25 Body Diode Voltage VSD IS = - 1 A, VGS = 0 V - 0.65 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C 311 467 ns Body Diode Reverse Recovery Charge Qrr 1.136 1.705 µC Reverse Recovery Fall Time ta 116 ns Reverse Recovery Rise Time tb 195 DTQ3115 4 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 12 20 0.0 0.5 1.0 1.5 2.0 VGS = 5 V thru 1.8 V VGS = 1 V VDS - Drain-to-Source Voltage (V) - D ra in C ur re nt (A ) I D VGS = 1.5 V 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 VGS = 2.5 V ID - Drain Current (A) VGS = 4.5 V R D S( on ) - O n- Re sis ta nc e (m VGS = 1.8 V 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 ID = 1 A - G at e- to -S ou rc e Vo lta ge (V ) Qg - T otal Gate Charge (nC) V G S VDS = 6 V VDS = 9.6 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 2.5 5.0 7.5 10.0 0.0 0.5 1.0 1.5 2.0 TC = 25 °C VGS - Gate-to-Source Voltage (V) - D ra in C ur re nt (A ) I D TC = 125 °C TC = - 55 °C 0 1000 2000 3000 0 3 6 9 12 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) C - C ap ac ita nc e (pF ) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 ID = 1 A TJ - Junction Temperature (°C) R D S( on ) - O n- Re sis ta nc e (N orm a liz e d) VGS = 4.5 V, 2.5 V VGS = 1.8 V DTQ3115 5 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 1.00.0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 125 °C VSD - Source-to-Drain Voltage (V) - So ur ce C ur re nt (A ) I S 0.001 0.01 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) V G S( th) (V ) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.01 0.02 0.03 0.04 0.05 0 1 2 3 4 5 ID = 1 A VGS - Gate-to-Source Voltage (V) R D S( on ) - D r a in -to -S ou rc e O n- Re sis ta nc e (m ) TA = 25 °C TA = 125 °C 0.001 0 40 60 50 10 Time (s) 20 Po w e r (W ) 0.01 0.1 1 30 10 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.001 10 - D ra in C ur re nt (A ) I D 0.1 TA = 25 °C Single Pulse 10 ms 100 ms DC Limited by RDS(on)* 1 s 10 s 0.01 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified BVDSS limited ID(on) limited IDM limited > DTQ3115 6 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Current Derating* 0 4 8 12 16 25 50 75 100 125 150 I D - D ra in C ur re nt (A ) TF - Foot Temperature (°C) Power Derating 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 TC - Case Temperature (°C) Po w e r (W ) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N or m a liz e d Ef fe ct ive T ra n sie nt Th er m al Im pe da nc e 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 72 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1010-110-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N or m a liz e d Ef fe ct ive T ra n sie nt Th er m al Im pe da nc e 1 DTQ3115 1 Package Information