DTM9435datasheet

1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) - 30 0.042 at VGS = - 10 V - 5.8 0.055 at VGS = - 6 V - 5.0 0.060 at VGS = - 4.5 V - 4.4 S D S D S D G D SO-8 5 6 7 8 Top View 2 3 4 1 S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID - 5.8 - 4.1 A TA = 70 °C - 4.6 - 3.2 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.3 - 1.1 Maximum Power Dissipationa TA = 25 °C PD 2.5 1.3 W TA = 70 °C 1.6 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 40 50 °C/WSteady State 70 95 Maximum Junction-to-Foot (Drain) Steady State RthJF 24 30 DTM9435 Administrator 附注 原厂代理商 深圳森利威尔电子有限公司 联系人：黄先生 手机：13760325070 QQ：2355368872 欢迎咨询,竭诚服务 2 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 70 °C - 5 On-State Drain Currentb ID(on) VDS ≤ - 10 V, VGS = - 10 V - 20 A VDS ≤ - 5 V, VGS = - 4.5 V - 5 Drain-Source On-State Resistanceb RDS(on) VGS = - 10 V, ID = - 5.8 A 0.033 0.042 ΩVGS = - 6 V, ID = - 5 A 0.043 0.055 VGS = - 4.5 V, ID = - 4.4 A 0.056 0.060 Forward Transconductanceb gfs VDS = - 15 V, ID = - 5.8 A 13 S Diode Forward Voltageb VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.1 V Dynamica Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A 16 24 nCGate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 8.8 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 14 25 ns Rise Time tr 14 25 Turn-Off Delay Time td(off) 42 70 Fall Time tf 30 50 Source-Drain Reverse Recovery Time trr IF = - 1.2 A, dI/dt = 100 A/µs 30 60 DTM9435 3 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 5 10 15 20 25 30 0 1 2 3 4 5 VGS = 10 V thru 6 V VDS - Drain-to-Source Voltage (V) I D - D ra in C ur re nt (A ) 3 V 5 V 4 V R D S( on ) - O n- Re sis ta nc e (Ω ) 0.00 0.03 0.06 0.09 0.12 0.15 0 4 8 12 16 20 ID - Drain Current (A) VGS = 6 V VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0.0 3.2 6.4 9.6 12.8 16.0 VDS = 15 V ID = 3.5 A V G S - G at e- to -S ou rc e Vo lta ge (V ) Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 5 10 15 20 25 30 0 1 2 3 4 5 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) I D - D ra in C ur re nt (A ) 0 220 440 660 880 1100 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss C - C ap ac ita nc e (pF ) Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 5.7 A TJ - Junction Temperature (°C) R DS (on ) - O n- Re sis ta nc e (N orm a liz e d) DTM9435 4 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 50 1 VSD - Source-to-Drain Voltage (V) I S - So ur ce C ur re nt (A ) 10 TJ = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Va ria nc e (V ) V G S( th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 0 2 4 6 8 10 ID = 5.8 A R D S( on ) - O n- Re sis ta nc e (Ω ) VGS - Gate-to-Source Voltage (V) 0 90 150 30 60P ow er (W ) Time (s) 120 1 1010-110-210-3 Safe Operating Area, Junction-to-Foot 100 1 0.1 1 10 100 0.01 10 100 ms 0.1 TC = 25 °C Single Pulse 1 s 10 s DC 10 ms 1 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified I D - D ra in C ur re nt (A ) DTM9435 5 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N or m al ize d Ef fe ct ive T ra n sie nt Th er m al Im pe da nc e 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1 1010-110-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) No rm al ize d Ef fe ct ive T ra n sie nt Th er m al Im pe da nc e DTM9435 1 DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"L B A1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 S Package Information 1 A P P L IC A T IO N N O T E RECOMMENDED MINIMUM PADS FOR SO-8 0. 24 6 (6. 24 8) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0. 15 2 (3. 86 1) 0. 04 7 (1. 19 4) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index Application Note Datasheet Package Drawings - 71192 Pad Guidelines - 72606