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Semiconductor_tutorial.pdf

Semiconductor_tutorial.pdf

上传者: lerry_74 2014-03-27 评分1 评论0 下载0 收藏0 阅读量790 暂无简介 简介 举报

简介:本文档为《Semiconductor_tutorialpdf》,可适用于IT/计算机领域,主题内容包含ProfessorNCheung,UCBerkeleySemiconductorTutorialEESEESemiconductorTutorial符等。

ProfessorNCheung,UCBerkeleySemiconductorTutorialEESEESemiconductorTutorialElectronsand“Holes”DopantsinSemiconductorsElectronEnergyBandDiagramMobilityResistivityandSheetResistanceProfessorNCheung,UCBerkeleySemiconductorTutorialEESWhybotherknowingElectronsandHolesMicrofabricationcontrolsdopantconcentrationdistributionND(x)andNA(x)ElectronConcentrationn(x)HoleConcentrationp(x)ElectricalresistivitySheetResistanceFermilevelEf(x)PNDiodeCharacteristicsMOSCapacitorMOSTransistorElectricFieldE(x)EffectCarrierMobilityProfessorNCheung,UCBerkeleySemiconductorTutorialEESElectronPotentialEnergyIsolatedatomsAtomsinasolidAvailablestatesatdiscreetenergylevelsAvailablestatesascontinuousenergylevelsinsideenergybandsConductionBandandValenceBandProfessorNCheung,UCBerkeleySemiconductorTutorialEESProfessorNCheung,UCBerkeleySemiconductorTutorialEESTheSimplifiedElectronEnergyBandDiagramProfessorNCheung,UCBerkeleySemiconductorTutorialEESDensityofStatesatConductionBand:TheGreekTheaterAnalogyPlanViewoftheamphitheatreatEpidarusElectronEnergyAmphitheatreatEpidarus,GreeceBuiltcBCEnergyGap(noavailableseats)NotethatthenumberofavailableseatsatsamepotentialenergyincreaseswithhigherelectronenergyProfessorNCheung,UCBerkeleySemiconductorTutorialEESAnunoccupiedelectronicstateinthevalencebandiscalleda“hole”Conceptofa“hole”ConductionBandValenceBandProfessorNCheung,UCBerkeleySemiconductorTutorialEESProfessorNCheung,UCBerkeleySemiconductorTutorialEESElectronandHoleConcentrationsforhomogeneoussemiconductoratthermalequilibriumn:electronconcentration(cm)p:holeconcentration(cm)ND:donorconcentration(cm)NA:acceptorconcentration(cm))Chargeneutralitycondition:NDp=NAn)LawofMassAction:np=niNote:CarrierconcentrationsdependonNETdopantconcentration(NDNA)!AssumecompletelyionizedtoformNDandNAProfessorNCheung,UCBerkeleySemiconductorTutorialEESHowtofindn,pwhenNaandNdareknownnp=NdNa()pn=ni()(i)IfNdNa>ni:nºNdNa(ii)IfNaNd>ni:pºNaNdProfessorNCheung,UCBerkeleySemiconductorTutorialEESMobilechargecarrierdriftvelocityvisproportionaltoappliedEfield:mnmpCarrierMobilitym|v|=mEMobilitydependson(NDNA)!(Unit:cmV•s)ProfessorNCheung,UCBerkeleySemiconductorTutorialEESRRsElectricalResistanceofLayoutPatterns(UnitofRS:ohmssquare)L=mmW=mmR=RsR=RsR=RsR=RsmmR=RsMetalcontactTopViewProfessorNCheung,UCBerkeleySemiconductorTutorialEESRICresistor=RpaperRSresistorRSpaperICResistorPatternResistorPaperPatternmicronscentimetersmagnifiedResistanceofArbitraryLayoutPatternsBeforeyoudothelayoutandfabricatethestructurewhichisexpensiveandtimeconsumingCutoutasimilarpatternonaresistorpaperwithaknownRSpaperMeasureRpaperexperimentallyacrossthetwoterminalsYouknowRSresistorofofamicrofabricatedlayerbypointprobemethodWillthislayoutpatterngivethedesiredRvalueYoucandeduce

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