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UV-100.pdf

UV-100.pdf

上传者: 秸秆分解剂 2014-03-27 评分1 评论0 下载0 收藏0 阅读量680 暂无简介 简介 举报

简介:本文档为《UV-100pdf》,可适用于电子通讯领域,主题内容包含UVEnhancedSeriesInversionLayersandPlanarDiffusedSiliconPhotodiodesOSIOptoe符等。

UVEnhancedSeriesInversionLayersandPlanarDiffusedSiliconPhotodiodesOSIOptoelectronicsofferstwodistinctfamiliesofUVenhancedsiliconphotodiodesInversionchannelseriesandplanardiffusedseriesBothfamiliesofdevicesareespeciallydesignedforlownoisedetectionintheUVregionofelectromagneticspectrumInversionlayerstructureUVenhancedphotodiodesexhibitinternalquantumefficiencyandarewellsuitedforlowintensitylightmeasurementsTheyhavehighshuntresistance,lownoiseandhighbreakdownvoltagesTheresponseuniformityacrossthesurfaceandquantumefficiencyimproveswithtovoltsappliedreversebiasInphotovoltaicmode(unbiased),thecapacitanceishigherthandiffuseddevicesbutdecreasesrapidlywithanappliedreversebiasPhotocurrentnonlinearitysetsinatlowerphotocurrentsforinversionlayerdevicescomparedtothediffusedonesBelownm,theirresponsivitiesvarylittlewithtemperaturePlanardiffusedstructure(UVDSeries)UVenhancedphotodiodesshowsignificantadvantagesoverinversionlayerdevices,suchaslowercapacitanceandhigherresponsetimeThesedevicesexhibitlinearityofphotocurrentuptohigherlightinputpowercomparedtoinversionlayerdevicesTheyhaverelativelylowerresponsivitiesandquantumefficienciescomparedtoinversionlayerdevicesTherearetwotypesofplanardiffusedUVenhancedphotodiodesavailable:UVDandUVEBothserieshavealmostsimilarelectroopticalcharacteristics,exceptintheUVEseries,wherethenearIRresponsesofthedevicesaresuppressedThisisespeciallydesirableifblockingthenearIRregionofthespectrumisnecessaryUVDdevicespeakatnmandUVEdevicesatnm(seegraph)Bothseriesmaybebiasedforlowercapacitance,fasterresponseandwiderdynamicrangeOrtheymaybeoperatedinthephotovoltaic(unbiased)modeforapplicationsrequiringlowdriftwithtemperaturevariationsTheUVEdeviceshaveahighershuntresistancethantheircounterpartsofUVDdevices,buthaveahighercapacitanceThesedetectorsareidealforcouplingtoanOPAMPinthecurrentmodeconfigurationasshownbelownFEATURES•Inversionseries:InternalQE•UltraHighRSH•PlanarDiffusedSeries:IRSuppressedHighSpeedResponseHighStability•ExcellentUVresponsenAPPLICATIONS•PollutionMonitoring•MedicalInstrumentation•UVExposureMeters•Spectroscopy•WaterPurification•Fluorescence::icshopqq:icqqcom::icshopqq:icqqcomInversionLayerUVEnhancedPhotodiodesTypicalElectroOpticalSpecificationsatTA=ºC‡The‘I’or‘L’suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecaseThephotodiodechipsin“FIL”seriesareisolatedinalowprofileplasticpackageTheyhavealargefieldofviewaswellasinlinepinsFormechanicaldrawingspleaserefertopagesthru*NonCondensingtemperatureandStorageRange,NonCondensingEnvironmentModelNumberActiveAreaResponsivity(AW)Capacitance(pF)ShuntResistance(MΩ)NEP(WHz)ReverseVoltage(V)RiseTime(μs)OperatingCurrent(mA)Temp*Range(C)PackageStyleArea(mm)Dimensions(mm)nmVmVVnmVnmΩVOperatingStoragemintypmaxmintyptypmaxtyptyp‘UVEnhanced’Series,InversionLayer,MetalPackageUVφe~~TOUVφeUVxeUVφeTOUVxeUVφe~~BNCUVL‡LoProfUVφeBNCUVLLoProf‘UVEnhanced’Series,InversionLayer,PlasticPackageFILUVφe~~PlasticFILUVφeUVPxePlasticFILUVφePlasticFILUVφeModelNumberActiveAreaResponsivity(AW)Capacitance(pF)ShuntResistance(GΩ)NEP(WHz)ReverseVoltage(V)RiseTime(μs)DarkCurrent(pA)Temp*Range(C)PackageStyleArea(mm)Dimensions(mm)nmVmVVnmVnmkΩVr=mVOperatingStoragemintypmaxmintyptypmaxtyptyp‘’Series,SuperUVOSDUsqe~~TOOSDQsqeTOOSDUsqeTOOSDQsqeTOOSDQsqeTOOSDCOsqeCeramic::icshopqq:icqqcom::icshopqq:icqqcomActiveAreaResponsivity(AW)Capacitance(pF)ShuntResistance(GΩ)NEP(WHz)RiseTime(µs)Temp*Range(C)nmnmnmVmVVnmReverseVoltage(V)VnmΩModelNumberArea(mm)Dimension(mm)PeakWavelengthλλλλP(nm)typtyptyptypmintyptypmaxtypOperatingStoragePackageStyle‘UVD’SeriesPlanarDiffused,MetalPackageUVDsqeUVDsqeTOUVDsqe~~TO‘UVD’SeriesPlanarDiffused,CeramicPackageUVDCsqeUVDCsqeUVDCsqe~~Ceramic‘UVE’SeriesPlanarDiffused,MetalPackageUVEsqeUVEsqeTOUVEsqe~~TO‘UVE’SeriesPlanarDiffused,CeramicPackageUVECsqeUVECsqeUVECsqe~~CeramicPlanarDiffusedUVEnhancedPhotodiodesTypicalElectroOpticalSpecificationsatTA=ºCFormechanicalspecificationspleaserefertopagesthru*NonCondensingtemperatureandStorageRange,NonCondensingEnvironment::icshopqq:icqqcom::icshopqq:icqqcomForFurtherAssistancePleaseCallOneofOurExperiencedSalesandApplicationsEngineersOrOntheInternetatwwwosioptoelectronicscomParameterDefinitions:A=Distancefromtopofchiptotopofglassa=PhotodiodeAnodeB=Distancefromtopofglasstobottomofcasec=PhotodiodeCathode(Note:cathodeiscommontocaseinmetalpackageproductsunlessotherwisenoted)W=WindowDiameterFOV=FiledofView(seedefinitionbelow)Dimensionsareininches(inch=mm)Pindiametersare"unlessotherwisespecifiedTolerances(unlessotherwisenoted)General:XX"XXX"ChipCentering:"Dimension‘A’:"WindowsAll‘UV’EnhancedproductsareprovidedwithQUARTZglasswindows,"thickAll‘XUV’productsareprovidedwithremovablewindowsAll‘DLS’PSDproductsareprovidedwithARcoatedglasswindowsAll‘FIL’photoconductiveandphotovoltaicproductsareepoxyfilledinsteadofglasswindows::icshopqq:icqqcom::icshopqq:icqqcomMechanicalSpecificationsAllunitsininchesPinoutsarebottomviewPINDIPINDPIPINDIPINDPIOSDOSDQPINDI,PINDPI,OSD,OSDQPINDI,PINDPIOSDPNAPINDIDPIPINDIDPIOSDQQuartzWindowPINDIPINDPIPINCDPPINCDPIBPXRPINCDPINCDPBPXOSDOSDTOSDTOSDQOSDUPINDPINDPPINDPSBPINDPINDPPINEFUVUVUVDUVEUVDUVEUVOSDOSDOSDTOSDTOSDQOSDUBPXRAllOthersPNABPINCDCDPBPXOSDPrefixDevicesPNABWAllOthersCDTPNABWPINAPINAPINDIPINDPIPINDIPINDPIPINYAGCDTPINAPINAPINDPSBPINDPINDPPINDPINDPUVUVDUVEUVPINHRPINHRPINHRPINHRPINHRPINDPLPIND,PINDP,PINDPSB,PIND,PINDP,PINEFUVD,UVE,UVD,UVOSD,OSD,OSDT,OSDTOSDQ,OSDUQuartzWindow:OSDQUVTransmissiveWindow:OSDUQuartzWindow:OSDQUVTransmissiveWindow:OSDUUV,UV,UVABPNBPXRAllOthersABABPNOSDPrefixDevicesAllOthersAB::icshopqq:icqqcom::icshopqq:icqqcomMechanicalSpecificationsAllunitsininchesPinoutsarebottomviewLowProfileProducts:PINDIPINDPIPINDPISBUVLUVLProducts:PINDPINDPPINDPSBUVUVProducts:PINDPINDPBNCBNCSpecialBNCProducts:PINAPPINDFProducts:FILCFILCFILUVFILCDGProducts:FILCFILCFILUVFILUVFILCDGSpecialPlasticSpecialPlastic(W)AABB(W)BFILTERCAPABC(W)(W)(W)(W)PinCircleDia=PNABFILCFILCFILUVFILUVFILCDGOuterContactAnodePIND,PINDP,PINDPSBOuterContactCathodeUV,UVOuterContactAnodePNABCPINDFPINAPDimensionsDimensionsPNFILCFILCacacFILUVFILUVcacaFILCDGcaccacPinoutsPinoutsDimensionsCasecaPNABFILCFILCFILUVFILUVFILCDGPNFILCFILCFILUVFILUVFILCDGacaccacacaaccaac::icshopqq:icqqcom::icshopqq:icqqcomMechanicalSpecificationsAllunitsininchesPinoutsarebottomviewTOProducts:XUVProducts:XUVXUVProducts:PINDSInTECTOTOSpecialCeramicPlasticProducts:RDRDAUVPUVECUVECUVECUVDCUVDCUVDCXUVCXUVCOSDCOOSDLRAOSDLRDProducts:PINRDPINRDTOSpecialPlasticProducts:PINDPINDPPINDPSBProducts:XUVBNC(W)(W)ABCNotchIndicatesAnodePinMinDaccaaccaCasePinCircleDia=PinCircleDia=PinDiameter=BNCConnectorOuterContact=CathodePinCircleDia=PNABCDUVECUVECUVECUVDCUVDCUVDCXUVCXUVCRDRDAUVPDimensionsTEC()ThermistorThermistorTEC()BottomInGaAs,CathodeBottomInGaAs,AnodeTopSilicon,AnodeTopSilicon,CathodePinoutOSDCOOSDLRAOSDLRDNote:OSDprefixpackagescomewith”(min)leads::icshopqq:icqqcom::icshopqq:icqqcom

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