下载

2下载券

加入VIP
  • 专属下载特权
  • 现金文档折扣购买
  • VIP免费专区
  • 千万文档免费下载

上传资料

关闭

关闭

关闭

封号提示

内容

首页 PIN-RD15

PIN-RD15.pdf

PIN-RD15

秸秆分解剂
2014-03-27 0人阅读 举报 0 0 暂无简介

简介:本文档为《PIN-RD15pdf》,可适用于IT/计算机领域

HighBreakdownVoltage,FullyDepletedSeriesLargeActiveAreaPhotodiodesTheLargeActiveAreaHighSpeedDetectorscanbefullydepletedtoachievethelowestpossiblejunctioncapacitanceforfastresponsetimesTheymaybeoperatedatahigherreversevoltage,uptothemaximumallowablevalue,forachievingevenfasterresponsetimesinnanosecondsThehighreversebiasatthispoint,increasestheeffectiveelectricfieldacrossthejunction,henceincreasingthechargecollectiontimeinthedepletedregionNotethatthisisachievedwithoutthesacrificeforthehighresponsivityaswellasactiveareaTheLargeActiveAreaRadiationDetectorscanalsobefullydepletedforapplicationsmeasuringhighenergyXrays,raysaswellashighenergyparticlessuchaselectrons,alpharaysandheavyionsThesetypesofradiationcanbemeasuredwithtwodifferentmethodsIndirectanddirectIndirectHighEnergyRadiationMeasurement:Inthismethod,thedetectorsarecoupledtoascintillatorcrystalforconvertinghighenergyradiationintoadetectablevisiblewavelengthThedevicesaremountedonaceramicandcoveredwithaclearlayerofanepoxyresinforanexcellentopticalcouplingtothescintillatorThismethodiswidelyusedindetectionofhighenergygammaraysandelectronsThisiswheretheXUVdevicesfailtomeasureenergieshigherthankeVThetypeandsizeofthescintillatorcanbeselectedbasedonradiationtypeandmagnitudeDirectHighEnergyRadiationMeasurement:BothPINRDandPINRDA,canalsobeusedwithoutanyepoxyresinorglasswindowfordirectmeasurementofhighenergyradiationsuchasalpharaysandheavyionsTheradiationexhibitslossofenergyalongalinearlinedeepintothesiliconafterincidentontheactiveareaTheamountoflossandthepenetrationdepthisdeterminedbythetypeandmagnitudeoftheradiationInordertomeasurecompletelytheamountofradiation,thedepletionlayershouldbedeepenoughtocoverthewholetrackfromtheincidentpointtothestoppointThisrequiresahighbiasapplicationtofullydepletethedetectorInspiteofthelargeactiveareaaswellashighbiasvoltageapplications,thedevicesexhibitsuperlowdarkcurrents,lowcapacitancesandlowseriesresistancesInadditiontotheiruseinhighenergyparticledetection,thePINRDandPINRDAarealsoexcellentchoicesfordetectionintherangebetweentonminapplicationswherealargeactiveareaandhighspeedisdesiredThesedetectorscanbecoupledtoachargesensitivepreamplifierorlownoiseopampasshownintheoppositepageTheconfigurationforindirectmeasurementisalsoshownwithascintillatorcrystalnFEATURESLargeActiveAreaHighSpeedDetectors•LargeActiveArea•FullyDepleteable•FastResponse•UltraLowDarkCurrent•LowCapacitanceLargeActiveAreaRadiationDetectors•LargeActiveArea•ScintillatorMountable•FullyDepleteable•UltraLowDarkCurrent•LowCapacitance•HighBreakdownVoltagenAPPLICATIONSLargeActiveAreaHighSpeedDetectors•LaserGuidedMissiles•LaserWarning•LaserRangeFinder•LaserAlignment•ControlSystemsLargeActiveAreaRadiationDetectors•ElectronDetection•MedicalInstrumentation•HighEnergySpectroscopy•ChargedParticleDetection•HighEnergyPhysics•NuclearPhysics::icshopqq:icqqcom::icshopqq:icqqcomFullyDepletedPhotodiodesTypicalElectroOpticalSpecificationsatTA=ºCDIRECTDETECTIONFordirectdetectionofhighenergyparticles,thepreamplifierisaFETinputopamp,followedbyoneormoreamplificationstages,ifnecessary,oracommercialchargesensitivepreamplifierThecountingefficiencyisdirectlyproportionaltotheincidentradiationpowerThereversebiasvoltagemustbeselectedassuchtoachievethebestsignaltonoiseratioForlownoiseapplications,allcomponentsshouldbeenclosedinametalboxAlso,thebiassupplyshouldbeeithersimplebatteriesoraverylowrippleDCsupplyThedetectorshouldalsobeoperatedinthephotovoltaicmodeAmplifier:OPA,OPAorsimilarRF:MΩtoGΩRS:MΩSmallerforHighCountingRatesCF:pFCD:pFtoµFOUTPUTVOUT=QCFWhereQistheChargeCreatedByOnePhotonorOneParticleOSDLR’sceramicpackagescomewithoutwindow,insteadtheopticallyclearepoxyisused†MeasuredatVbias=V¶Formechanicaldrawingspleaserefertopagesthru*NonCondensingtemperatureandStorageRange,NonCondensingEnvironmentINDIRECTDETECTION(WITHSCINTILLATORCRYSTAL)ThecircuitisverysimilartothedirectdetectioncircuitexceptthatthephotodiodeiscoupledtoascintillatorThescintillatorconvertsthehighenergyXraysandorXraysintovisiblelightSuitablescintillatorsincludeCsI(TL),CdWO,BGOandNaI(TL)TheamplifiershouldbeaFETinputopamp,followedbyoneormoreamplificationstages,oracommercialchargesensitivepreamplifierTheoutputvoltagedependsprimarilyonthescintillatorefficiencyandshouldbecalibratedbyusingradioactivesourcesModelNumberActiveAreaPeakResponsivityWavelength(nm)Responsivity(AW)DepletionVoltageDarkCurrent(nA)Capacitance(pF)RiseTime(ns)NEP(W√Hz)ReverseVoltage(V)Temp*Range(˚C)PackageStyle¶Area(mm)Dimensions(mm)nmVVVnmVΩnmVµAOperatingStoragetyptyptypmaxtypmaxtyptypmaxLargeActiveArea,HighSpeedPINRDφe~~TOPINRDφePINRDSq††††e~~CeramicPINRDASqeModelNumberActiveAreaPeakResponsivityWavelength(nm)ResponsivitynmCapacitance(pF)ShuntResistance(GΩ)NEP(W√Hz)RiseTime(ns)Temp*Range(˚C)PackageStyle¶Area(mm)Dimensions(mm)AWVVnmVnmΩOperatingStoragetyptypmintyptyptypOSDLRSeriesOSDLRAxe~~CeramicOSDLRDx::icshopqq:icqqcom::icshopqq:icqqcomForFurtherAssistancePleaseCallOneofOurExperiencedSalesandApplicationsEngineersOrOntheInternetatwwwosioptoelectronicscomParameterDefinitions:A=Distancefromtopofchiptotopofglassa=PhotodiodeAnodeB=Distancefromtopofglasstobottomofcasec=PhotodiodeCathode(Note:cathodeiscommontocaseinmetalpackageproductsunlessotherwisenoted)W=WindowDiameterFOV=FiledofView(seedefinitionbelow)Dimensionsareininches(inch=mm)Pindiametersare±"unlessotherwisespecifiedTolerances(unlessotherwisenoted)General:XX±"XXX±"ChipCentering:±"Dimension‘A’:±"WindowsAll‘UV’EnhancedproductsareprovidedwithQUARTZglasswindows,±"thickAll‘XUV’productsareprovidedwithremovablewindowsAll‘DLS’PSDproductsareprovidedwithARcoatedglasswindowsAll‘FIL’photoconductiveandphotovoltaicproductsareepoxyfilledinsteadofglasswindows::icshopqq:icqqcom::icshopqq:icqqcomMechanicalSpecificationsAllunitsininchesPinoutsarebottomviewTOProducts:XUVProducts:XUVXUVProducts:PINDSInTECTOTOSpecialCeramicPlasticProducts:RDRDAUVPUVECUVECUVECUVDCUVDCUVDCXUVCXUVCOSDCOOSDLRAOSDLRDProducts:PINRDPINRDTOSpecialPlasticProducts:PINDPINDPPINDPSBProducts:XUVBNC(W)(W)ABCNotchIndicatesAnodePinMinDaccaaccaCasePinCircleDia=PinCircleDia=PinDiameter=BNCConnectorOuterContact=CathodePinCircleDia=PNABCDUVECUVECUVECUVDCUVDCUVDCXUVCXUVCRDRDAUVPDimensionsTEC()ThermistorThermistorTEC()BottomInGaAs,CathodeBottomInGaAs,AnodeTopSilicon,AnodeTopSilicon,CathodePinoutOSDCOOSDLRAOSDLRDNote:OSDprefixpackagescomewith”(min)leads::icshopqq:icqqcom::icshopqq:icqqcom

用户评价(0)

关闭

新课改视野下建构高中语文教学实验成果报告(32KB)

抱歉,积分不足下载失败,请稍后再试!

提示

试读已结束,如需要继续阅读或者下载,敬请购买!

文档小程序码

使用微信“扫一扫”扫码寻找文档

1

打开微信

2

扫描小程序码

3

发布寻找信息

4

等待寻找结果

我知道了
评分:

/4

PIN-RD15

VIP

在线
客服

免费
邮箱

爱问共享资料服务号

扫描关注领取更多福利