24
High Breakdown Voltage, Fully Depleted Series
Large Active Area Photodiodes
The Large Active Area High Speed Detectors can be fully depleted to
achieve the lowest possible junction capacitance for fast response
times. They may be operated at a higher reverse voltage, up to the
maximum allowable value, for achieving even faster response times in
nano seconds. The high reverse bias at this point, increases the effective
electric field across the junction, hence increasing the charge collection
time in the depleted region. Note that this is achieved without the sacrifice
for the high responsivity as well as active area.
The Large Active Area Radiation Detectors can also be fully depleted
for applications measuring high energy X-rays, -rays as well as high
energy particles such as electrons, alpha rays and heavy ions. These
types of radiation can be measured with two different methods. Indirect
and direct.
Indirect High Energy Radiation Measurement:
In this method, the detectors are coupled to a scintillator crystal for
converting high energy radiation into a detectable visible wavelength.
The devices are mounted on a ceramic and covered with a clear layer
of an epoxy resin for an excellent optical coupling to the scintillator.
This method is widely used in detection of high energy gamma rays and
electrons. This is where the X-UV devices fail to measure energies higher
than 17.6 keV. The type and size of the scintillator can be selected based
on radiation type and magnitude.
Direct High Energy Radiation Measurement:
Both PIN-RD100 and PIN-RD100A, can also be used without any epoxy resin or glass window for direct measurement of high energy radiation such as
alpha rays and heavy ions. The radiation exhibits loss of energy along a linear line deep into the silicon after incident on the active area.
The amount of loss and the penetration depth is determined by the type and magnitude of the radiation. In order to measure completely the amount
of radiation, the depletion layer should be deep enough to cover the whole track from the incident point to the stop point. This requires a high bias
application to fully deplete the detector. In spite of the large active area as well as high bias voltage applications, the devices exhibit super low dark
currents, low capacitances and low series resistances.
In addition to their use in high energy particle detection, the PIN-RD100 and PIN-RD100A are also excellent choices for detection in the range between
350 to 1100 nm in applications where a large active area and high speed is desired.
These detectors can be coupled to a charge sensitive preamplifier or lownoise op-amp as shown in the opposite page. The configuration for indirect
measurement is also shown with a scintillator crystal.
n FEATURES
Large Active Area
High Speed Detectors
• Large Active Area
• Fully Depleteable
• Fast Response
• Ultra Low Dark Current
• Low Capacitance
Large Active Area
Radiation Detectors
• Large Active Area
• Scintillator Mountable
• Fully Depleteable
• Ultra Low Dark Current
• Low Capacitance
• High Breakdown Voltage
n APPLICATIONS
Large Active Area
High Speed Detectors
• Laser Guided Missiles
• Laser Warning
• Laser Range Finder
• Laser Alignment
• Control Systems
Large Active Area
Radiation Detectors
• Electron Detection
• Medical Instrumentation
• High Energy Spectroscopy
• Charged Particle Detection
• High Energy Physics
• Nuclear Physics
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25
Fully Depleted Photodiodes
Typical Electro-Optical Specifications at TA=23ºC
DIRECT DETECTION
For direct detection of high-energy
particles, the pre-amplifier is a FET
input op-amp, followed by one
or more amplification stages, if
necessary, or a commercial charge
sensitive preamplifier. The counting
efficiency is directly proportional
to the incident radiation power.
The reverse bias voltage must be
selected as such to achieve the best
signal-to-noise ratio. For low noise
applications, all components should
be enclosed in a metal box. Also,
the bias supply should be either
simple batteries or a very low ripple
DC supply. The detector should
also be operated in the photovoltaic
mode.
Amplifier: OPA-637, OPA-27 or similar
RF : 10 MΩ to 10 GΩ
RS : 1 MΩ; Smaller for High Counting Rates
CF: 1pF
CD : 1pF to 10 µF
OUTPUT VOUT = Q / CF
Where Q is the Charge Created By One Photon or
One Particle
OSD-35-LR’s ceramic packages come without window, instead the optically clear epoxy is used.
† Measured at Vbias = -50V
¶ For mechanical drawings please refer to pages 58 thru 69.
* Non-Condensing temperature and Storage Range, Non-Condensing Environment.
INDIRECT DETECTION (WITH
SCINTILLATOR CRYSTAL)
The circuit is very similar to the direct detection
circuit except that the photodiode is coupled to a
scintillator. The scintillator converts the high-energy
X-rays and/or X-rays into visible light. Suitable
scintillators include CsI(TL), CdWO4, BGO and
NaI(TL). The amplifier should be a FET input op-
amp, followed by one or more amplification stages,
or a commercial charge sensitive preamplifier.
The output voltage depends primarily on the
scintillator efficiency and should be calibrated by
using radioactive sources.
M
o
d
e
l
N
u
m
b
e
r Active Area
P
e
a
k
R
e
sp
o
n
si
v
it
y
W
a
v
e
le
n
g
th
(n
m
)
Responsivity
(A/W)
D
e
p
le
ti
o
n
V
o
lt
a
g
e
Dark Current
(nA)
Capacitance
(pF)
Rise Time
(ns)
NEP
(W/√Hz)
Reverse
Voltage
(V)
Temp.*
Range
(˚C)
Package
Style ¶
A
re
a
(
m
m
2
)
D
im
e
n
si
o
n
s
(m
m
) 900 nm V -100 V -100 V
900 nm
-100 V
50Ω
900nm
-100V 10 µA
O
p
e
ra
ti
n
g
S
to
ra
g
e
typ. typ. typ. max. typ. max. typ. typ. max.
Large Active Area, High Speed
PIN-RD07 7.1 3.00 φ
900
0.55 48 0.2 5.0 8.0 9.0 1.5 1.2 e-14 135
-4
0
~
+
1
0
0
-5
5
~
+
1
2
5
26 / TO-8
PIN-RD15 14.9 4.35 φ 0.58 55 1.0 30 14 16 3.0 2.5 e-14 140
PIN-RD100 100 10 Sq
950 0.60
75 2 † 10 † 50 † 60 † --- 3.2 e-14 120
-2
0
~
+
6
0
-2
0
~
+
8
0
25 / Ceramic
PIN-RD100A 100 10 Sq 35 2 10 40 45 --- 3.4 e-14 70
M
o
d
e
l
N
u
m
b
e
r Active Area
P
e
a
k
R
e
sp
o
n
si
v
it
y
W
a
v
e
le
n
g
th
(n
m
)
Responsivity
900 nm
Capacitance
(pF)
Shunt
Resistance
(GΩ)
NEP
(W/√Hz)
Rise
Time
(ns)
Temp.*
Range
(˚C)
Package
Style ¶
A
re
a
(
m
m
2
)
D
im
e
n
si
o
n
s
(m
m
) A/W 0 V -10 V 900 nm
0 V
632nm
50Ω
O
p
e
ra
ti
n
g
S
to
ra
g
e
typ. typ. min. typ. typ. typ.
OSD35-LR Series
OSD35-LR-A 34.2 5.8 x 5.9 830 0.54 1300 2 3 5.6 e-15 ---
-2
5
~
+
7
5
-4
5
~
+
1
0
0
25 / Ceramic
OSD35-LR-D 34.2 5.8 x 5.9 830 0.54 1300 0.1 0.3 1.8 3-14 ---
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For Further Assistance
Please Call One of Our Experienced
Sales and Applications Engineers
310-978-0516
- Or -
On the Internet at
www.osioptoelectronics.com
57
1. Parameter Definitions:
A = Distance from top of chip to top of glass.
a = Photodiode Anode.
B = Distance from top of glass to bottom of case.
c = Photodiode Cathode
(Note: cathode is common to case in metal package products unless otherwise noted).
W = Window Diameter.
F.O.V. = Filed of View (see definition below).
2. Dimensions are in inches (1 inch = 25.4 mm).
3. Pin diameters are 0.018 ± 0.002" unless otherwise specified.
4. Tolerances (unless otherwise noted)
General: 0.XX ±0.01"
0.XXX ±0.005"
Chip Centering: ±0.010"
Dimension ‘A’: ±0.015"
5. Windows
All ‘UV’ Enhanced products are provided with QUARTZ glass windows,
0.027 ± 0.002" thick.
All ‘XUV’ products are provided with removable windows.
All ‘DLS’ PSD products are provided with A/R coated glass windows.
All ‘FIL’ photoconductive and photovoltaic products are epoxy filled instead of
glass windows.
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61
Mechanical Specifications
All units in inches. Pinouts are bottom view.
TO-522
Products:
XUV-005
Products:
XUV-020
XUV-035
Products:
PIN-DSIn-TEC
TO-823 TO-824
Special Ceramic / Plastic25
Products:
RD-100
RD-100A
UV-35P
UV-005EC
UV-035EC
UV-100EC
UV-005DC
UV-035DC
UV-100DC
XUV-50C
XUV-100C
OSD35-7CO
OSD35-LR-A
OSD35-LR-D
Products:
PIN-RD07
PIN-RD15
TO-826
Special Plastic27
Products:
PIN-220D
PIN-220DP
PIN-220DP/SB
Products:
XUV-100
BNC28
0.600
0.525
0.435
0.113
0.231
(W)
0.550
0.485
0.430
(W)
0.375
0.500
0.075
0.225
0.375
0.201
0.530
0.120
0.550
0.460
0.065
0.360
0.285
0.090
A
B
C
0.310
0.209
0.118
0.076
0.065
0.236
0.626
0.450
0.560
1.250
1.575
0.975
0.625
0.083
0.390
0.470
Notch
Indicates
Anode Pin
0.080
0.390 Min.
D
3a
3 1 3 1
1
5
4
81c
c a
3a 1c
3c
3 1
2
1a
2 Case
Pin Circle Dia.=0.295
Pin Circle Dia.=0.295
Pin Diameter=0.040
BNC Connector
Outer Contact = Cathode
Pin Circle Dia.=0.200
P/N A B C D
UV-005EC 0.400 0.350 0.030 0.280
UV-035EC 0.400 0.350 0.030 0.290
UV-100EC 0.650 0.590 0.048 0.500
UV-005DC 0.400 0.350 0.030 0.280
UV-035DC 0.400 0.350 0.030 0.290
UV-100DC 0.650 0.590 0.053 0.500
XUV-50C 0.650 0.590 0.027 0.490
XUV-100C 0.650 0.590 0.027 0.490
RD-100 0.650 0.590 0.027 0.490
RD-100A 0.650 0.590 0.027 0.490
UV-35P 0.390 0.345 0.050 0.275
Dimensions
1 TEC (-)
2 Thermistor
3 Thermistor
4 TEC (+)
5 Bottom InGaAs, Cathode
6 Bottom InGaAs, Anode
7 Top Silicon, Anode
8 Top Silicon, Cathode
Pinout
OSD35-7CO
OSD35-LR-A
OSD35-LR-D
0.390
0.390
0.390
0.350
0.350
0.350
0.290
0.290
0.290
---
---
---
Note: OSD35-prefix packages come with 0.31” (min.) leads
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