混合动力和纯电动车功率半导体器件(PPT only)

混合动力和纯电动车功率半导体器件： 应用技术小结 应用 工程 路基工程安全技术交底工程项目施工成本控制工程量增项单年度零星工程技术标正投影法基本原理 师 何耀华 List of content  High power application with xEV main inverter  Low power application aux drive and dcdc Page 3 功率半导体在逆变器应用中， 设计 领导形象设计圆作业设计ao工艺污水处理厂设计附属工程施工组织设计清扫机器人结构设计 的几个考虑要点 Page 4 For internal use only 如何驱动IGBT模块？ -----对IGBT内部电容的充放电过程 Page 5 For internal use only IGBT驱动电路的原理框图 IGBT Driver UT IGBT Driver UB IGBT Driver VT IGBT Driver VB IGBT Driver WT IGBT Driver WB SMPS 15V/-8V 15V/-8V 15V/-8V 15V/-8V 5V 5V 5V 5V 5V 5V 5V Connector LOGIC FAULT U FAULT V FAULT W RESET F A U L T W F A U L T V F A U L T U F A U L T R E S E T TEMPERATURE BOARD Temperature Board INPUT LOGIC (PWM) DC LINK VOLTAGE MEASUREMENT DC LINK VOLTAGE MEASUREMENT IGBT MODUL TEMP IGBT MODUL TEMPERATURE 12V SMPS IGBT Driver UT INPUT LOGIC (PWM) LOGIC TEMPERATURE BOARD DC LINK VOLTAGE MEASUREMENT IGBT MODUL TEMP IGBT Driver UT IGBT Driver UT IGBT Driver UT IGBT Driver UT IGBT Driver UT Page 6 For internal use only Dr. Christmann 对于每个特定应用，需通过寿命仿真计算，才能确 保设计的可靠性  电气参数评估  机械寿命耐久评估  模块寿命建模计算 31.05.2013 Copyright © Infineon Technologies 2010. All rights reserved. Page 6 客户 车辆驱动 参数 马达电气参数 电气拓扑结构 行驶工况 只有通过对IGBT模块的寿命计算，才能确 保设计的可靠性 Page 7 For internal use only FAST 2011 Set date Page 7 英飞凌提供的技术支持: 仿真计算 Set date Page 7 行驶工况 模块的温度统计 散热设计 被动温度循环（环境温度） 寿命预期 Copyright © Infineon Technologies 2011. All rights reserved. Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 5/31/2013 Page 8 寿命预期分析（仿真结果举例） 预期寿命 热带 寒带 HP1 400A / 650V 15.7 年 8.6 年  HybridPack 模块能满足客户提出的电气参数需求  在这次设计中，IGBT模块的系统焊接层是寿命的瓶颈  环境温度特别是在寒带情下冷车启动工况，导致的温差是影响寿命的主要因素  建议客户重新评估给定的被动温度循环参数是否过高 Copyright © Infineon Technologies 2010. All rights reserved. EV ，HEV运行工况的影响 05.07.2010 Page 9 几种工况下的影响 1.正常电机驱动、车辆最大加速 2.车辆低速运行（Sin ripple） 3.电机堵转，半坡起步（Hill hold） Copyright © Infineon Technologies 2010. All rights reserved. Temp. Waveform Sample of Low Speed  Set date Copyright © Infineon Technologies 2011. All rights Page 10 Zhihong Liang IFCN AIM Sept 2006 Page 11 模块的选择 & 与逆变器输出功率的关系 Ic,nom Chip Technologies Housing & Topology Module Selectio n Inverter Output Power P o w e r L o s s e s Rth(j-a) & Zthjc Io_rms Io_peak  2Ic,nom Vdc-link cos Modulation Factor m fsw fo Thermal Grease Rthha Ta Tj must be  125C (150C*) Operating Conditions 典型问 题 快递公司问题件快递公司问题件货款处理关于圆的周长面积重点题型关于解方程组的题及答案关于南海问题 ： 模块能驱动多少功率的电机？ Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 电机运行在不同工况下，逆变器最大电流能力需要动态调节 电流vs温度曲线（HP2 650V 800A and 1200V 400A） DC-link voltage 370V (650V)/ 460V (1200V),m=0.9, cos phi=1.05 17.10.2011 Page 12 200 250 300 350 400 450 500 550 50 55 60 65 70 75 80 85 90 M ax . c u rr e n t (p h as e A rm s) Cooling temp. (°C) 650V_8l_5Khz 650V_8l_10Khz 650V_8l_15Khz 650V_10l_5Khz 650V_10l_10Khz 650V_10l_15KHz 650V_12l_5KHz 650V_12l_10KHz 650V_12l_15KHz 1200V_8l_5KHz 1200V_8l_10KHz 1200V_8l_10Khz 1200V_10l_5Khz 1200V_10l_10KHz 1200V_10l_15KHz 1200V_12l_5KHz 1200V_12l_10KHz 1200V_12l_15KHz Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 5/31/2013 Page 13 Copyright © Infineon Technologies 2011. All rights reserved. 最大电流能力vs散热水流速曲线@ 不同母线电压下 HP2 800A/650V, Current Curve @ Different Cooling Flow Tcool(°C) =65,fsw = 10kHz,cosΦ = 0.9, Hill hold mode, Duty = 0.5 C u rr e n t ( A ) Cooling Flow(L/Min) Page 14 Copyright © Infineon Technologies 2008. All rights reserved. For internal use only 31.05.2013 逆变器的损耗，效率和发热 Application Pelec Ploss Mild hybrid motor ~15kW ~0,7kW Full hybrid generator ~50kW ~1,6kW Full hybrid Motor ~100kW ~2,5kW + Plosses > Tjunction • Rth j a Tjunction max = Tcoolant Page 15 Copyright © Infineon Technologies 2008. All rights reserved. For internal use only Internal Use Only 2008-08-22 Over Loading High Switching Freq. High Rg Value Vge Under-voltage Wrong Selection of Type of IGBT Software Error (Logic, Dead Time) Gate Driving Error High Vibration – Bond Wires Broken Motor Acceleration Fast Switching – High di/dt High Stray Inductance ESD (Improper Handling, Missing of Earth Connection) Any error that Vge > VGES High Power Loss Short Circuit Mounting Fault Poor Cooling Low Output Frequency High Tch High Tj Ripple High Surge Current > 2Ic,nom J u n c tio n O v e r-te m p e ra tu re Vce > VCES IGBT Failure IGBT失效的分类 Page 16 For internal use only Hybridpack2的直接水冷散热器 area: 190x70 mm 1600 W total IGBT losses @ 300Arms direct cooling  ~ T=37 K @ 6l/min module on cooler  ~ T=69 K @ 6l/min Page 17 For internal use only For internal use only 5/31/2013 Page 17 HP1 平板模块散热需考虑安装工艺 Copyright © Infineon Technologies 2010. All rights reserved. 2008-07-25 焊接可靠性，取决于散热底板和DBC板的材料选择， 不同材料有不同的热膨胀系数(CTE) [ppm/K] Thermal Shock Test Results Copyright © Infineon Technologies 2010. All rights reserved. 绑定线的可靠性 Bond-wire lift-off (left) and reconstruction of Al metallization (right) Bond-wire heel cracks Page 20 For internal use only 汽车级功率半导体模块的可靠性验证过程 Qualification not 100% according to AEC Q-101 as Q101 refers to discretes (e.g. 77 modules) Half-sine pulse, 30g ±, 3x per axis (x, y, z), bare module Mechanical Shock Shock Conditions Description Type 1.000h, Tj = Tjmax=150°C, VCE = 0,9 * VCEmax High Temperature Reverse Bias HTRB 1.000h, Tj = 150°C, VGE = ±VGEmax High Temperature Gate Stress HTGS 1.000h, 85°C, 85% RH, VCE = 0.8*VCEmax, but max. 80V, VGE = 0V High Humidity High Temperature Reverse Bias H3TRB 1.000h, Ta = Tstg_min = -40°C No operation; bare module Low Temperature Storage LTS Tstg_min - Tstg_max typ. -40°C to +125°C tstorage = 30 min, tchange ≤ 30s 1.000 cycles; No operation; bare module Thermal Shock (2-chamber-test) TST External heating and external cooling 2 min < tcycl. < 6min; ΔTj=80K, Tcmin =25°C, (typical values) 25kcycles Thermal Cycling TC 5-200 Hz sine wave (1 oct. per min.), 5g, 30h per axis (x, y, z) bare module Vibration V Internal heating and external cooling 1min < tcycl. < 6min; ΔTj=60K, Tcmin = 50°C, (typical values) 15kcycles Power Cycling [min] PC (min) Internal heating and external cooling 0.5sec < tcycl. < 5sec; ΔTj=60K, Tjmax = 150°C, (typical values) 150kcycles Power Cycling [sec] PC (sec) Chip relevant Package relevant Chip relevant Package relevant Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 5/31/2013 Page 21 失效分析实验室支持 Copyright © Infineon Technologies 2010. All rights reserved. Set date Copyright © Infineon Technologies 2011. All rights Page 22 Copyright © Infineon Technologies 2010. All rights reserved. Set date Page 23 Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 05.07.2010 Overview aux. drives and converters High-voltage battery M Charger AC/DC Low- voltage battery HV auxiliaries High- power DC/DC Inverter DC/AC HV-LV DC/DC Battery mgmt. High-voltage boardnet EV = electric vehicle HEV = hybrid electric vehicle HV = high-voltage LV = low-voltage AC = alternating current DC = direct current Page 24 Copyright © Infineon Technologies 2010. All rights reserved. Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 10.02.2010 Page 25 Automotive Easy Modules BENEFITS:  Power Density and Robustness  Easy Mounting Processes  PressFIT Technology  Low System Cost  Compact Design  Reliable Isolation  Automotive Quality & Reliability  NTC for Temperature Sensing  Low Stray Inductance (Module & System)  Platform for different Topologies Module Properties EASY 1B & 2B Module Module Construction Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 10.02.2010 Page 26 Overview aux. drives and converters  Auxillary Drives  Air Conditioning  Oil Pump  Cooling Pump  DC/DC-Converter (HV/LV)  PTC-Heater  Charger (onboard) 10.02.2010 Page 26 Applications Overview aux. drives and converters Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Page 27 May, 2011 Automotive EASY Module Family Flexible platform for different Applications Page 27 Product in development: Auxiliary Drives Configuration: Six-Pack (B6) Chips: 50A, 75A IGBT3 EMCON3 (other current rating on request) Early Engineering Samples available. Application: DC/DC-converter Configuration: TBD (e.g. H-Bridge) Chips: TBD (e.g. IGBT3_HighSpeed, EMCON3) More Info: “EASY ATV Selection Guide DC/DC-converter” Product in development: Application: PTC-Heater Configuration: TBD Chips: TBD (e.g. IGBT3, EMCON3) 5 Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 10.02.2010 Page 28 Automotive Easy Modules Improved Reliability and Quality Improved ceramic material and dimple layout  Reduces copper de-lamination & DCB cracking  Strongly improved thermal cycling performance DCB Improvements for Automotive Requirements Traceability for Automotive Requirements DMX Chip on DCB & DMX code on housing  Tracing: wafer lot, wafer no, wafer xy-position of chip  100% x-ray pictures  …  Automotive: Zero Defect Strategy + Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 31.05.2013 Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 31.05.2013 Copyright © Infineon Technologies 2010. All rights reserved. For internal use only 31.05.2013 Modules and PCB mounting on the heat sink For internal use only Easy module based DC_DC LiuMeng/HeYaohua Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Typical requirement on DC_DC Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Typical requirement on DC_DC Copyright © Infineon Technologies 2010. All rights reserved. Set date Page 35 Copyright © Infineon Technologies 2011. All rights reserved. 功能描述 带同步整流功能的移相全桥控制器 基于高速IGBT3芯片,可达100Khz开关频率 通过9:1变比的变压器,输入电压范围可达 160V至350V 输出电流高达170A(14V)（附边电流限制） 最高效率可达93%(包括辅助电路功耗) 平均效率在160V时可达90% (全温度/负载条件下) 低系统bom成本(无须谐振电感,附边无须主动钳位器件etc) Key Function Full Bridge Phase Shift Converter with Synchronous Rectification 100 kHz Switching Frequency with High Speed IGBT3 and Rapid Diode  Wide Input Voltage Range (160 V…350 V with 9:1 transformer) Output currents up to 170 A @14 V (limit of secondary side) High efficiency up to 93% incl. all aux supplies High efficiency over wide load and temp conditions e.g. >90% @160 V from 150 W to 2.3 kW Low system BOM (e.g. no resonating inductance, no active components in sec side snubber,…) 基于汽车级Easy Module 的HV to LV DC/DC转换器参考设计 HV to LV DC/DC-Converter Evaluation Kit with Easy Automotive Module Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Block diagram dcdc H bridge Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Easy module H bridge High speed IGBT Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Function Principle of Phase Shift ZVT Converter Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Current waveform of the transformer primary side Current waveform of the transformer primary side with the corresponding gate control signals of the 4 HV switches. Each half bridge leg is driven by constant 50% duty cycle. The phase shift of the right leg is here the duty cycle command for the converter energy transfer. The leakage inductance of the transformer leads to a loss of duty cycle (Dloss). Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Synchronous Rectification(LV side) Simulated waveforms of the MOSFET switch at the secondary side over a switching period T: Vgs, Vds and Is Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Power Loss Distribution Power losses distribution on the HV switches, LV switches and passive components (including power transformer, filter inductor, filter capacitor and losses in the PCB) for two different input voltages Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Efficiency vs output current Copyright © Infineon Technologies 2010. All rights reserved. For internal use only Key bom of dc_dc converter 推荐产品 Infineon Product 特点 Feature F4-50R07W1H3_B11A 基于easy 1B封装的H桥IGBT功率模块，内置IGBT3高速IGBT和二极管，电压可达650V Easy 1B Automotive H-bridge with High Speed IGBT3 and Rapid Diode 650V . IPB180N08S4-02 附边同步整流mosfet ，TO263-7封装，80V 2.2mΩ 80V 2.2mΩ OptiMOS™ in TO263-7 1ED020I12FA & 2ED020I12FA IGBT 驱动芯片，单通道/双通道，驱动电流高达2A EiceDriver™ 2A Single /Dual Channel Gate Driver Copyright © Infineon Technologies 2010. All rights reserved. Set date Page 46