SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors BD176 BD178 BD180
DESCRIPTION
With TO-126 package
·Complement to type BD175 /177 /179
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1 Emitter
2 Collector;connected to mounting base
3 Base
Absolute maximum ratings (Ta=25�)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
BD176 -45
BD178 -60 VCBO Collector-base voltage
BD180
Open emitter
-80
V
BD176 -45
BD178 -60 VCEO Collector-emitter voltage
BD180
Open base
-80
V
VEBO Emitter -base voltage Open collector -5 V
IC Collector current (DC) -3 A
ICM Collector current-Peak -7 A
PC Collector power dissipation TC=25� 30 W
Tj Junction temperature 150 �
Tstg Storage temperature -65~150 �
SavantIC Semiconductor Product Specification
2
Silicon PNP Power Transistors BD176 BD178 BD180
CHARACTERISTICS
Tj=25� unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.8 V
VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.3 V
BD176 -45
BD178 -60 VCEO(SUS)
Collector-emitter
sustaining voltage
BD180
IC=-0.1A; IB=0
-80
V
BD176 VCB=-45V; IE=0
BD178 VCB=-60V; IE=0 ICBO Collector cut-off current
BD180 VCB=-80V; IE=0
-100 µA
IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA
hFE-1 DC current gain IC=-150mA ; VCE=-2V 40 250
hFE-2 DC current gain IC=-1A ; VCE=-2V 15
fT Transition frequency IC=-250mA; VCE=-10V 3 MHz
� hFE-1 Classifications
6 10 16
40-100 63-160 100-250
� classification 16 :only BD176
SavantIC Semiconductor Product Specification
3
Silicon PNP Power Transistors BD176 BD178 BD180
PACKAGE OUTLINE
Fig.2 Outline dimensions
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