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74HC14D六路施密特触发反向器

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74HC14D六路施密特触发反向器 DATA SHEET Product specification Supersedes data of 1997 Aug 26 2003 Oct 30 INTEGRATED CIRCUITS 74HC14; 74HCT14 Hex inverting Schmitt trigger 2003 Oct 30 2 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 FE...

74HC14D六路施密特触发反向器
DATA SHEET Product specification Supersedes data of 1997 Aug 26 2003 Oct 30 INTEGRATED CIRCUITS 74HC14; 74HCT14 Hex inverting Schmitt trigger 2003 Oct 30 2 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 FEATURES • Applications: – Wave and pulse shapers – Astable multivibrators – Monostable multivibrators. • Complies with JEDEC standard no. 7A • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 to +85 °C and −40 to +125 °C. DESCRIPTION The 74HC14 and 74HCT14 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC14 and 74HCT14 provide six inverting buffers with Schmitt-trigger action. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW): PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For type 74HC14 the condition is VI = GND to VCC. For type 74HCT14 the condition is VI = GND to VCC − 1.5 V. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC HCT tPHL/tPLH propagation delay nA to nY CL = 15 pF; VCC = 5 V 12 17 ns CI input capacitance 3.5 3.5 pF CPD power dissipation capacitance per gate notes 1 and 2 7 8 pF 2003 Oct 30 3 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 FUNCTION TABLE Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION PINNING INPUT OUTPUT nA nY L H H L TYPE NUMBER PACKAGE TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE 74HC14D −40 to +125 °C 14 SO14 plastic SOT108-1 74HCT14D −40 to +125 °C 14 SO14 plastic SOT108-1 74HC14DB −40 to +125 °C 14 SSOP14 plastic SOT337-1 74HCT14DB −40 to +125 °C 14 SSOP14 plastic SOT337-1 74HC14N −40 to +125 °C 14 DIP14 plastic SOT27-1 74HCT14N −40 to +125 °C 14 DIP14 plastic SOT27-1 74HC14PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1 74HCT14PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1 74HC14BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-1 74HCT14BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-1 PIN SYMBOL DESCRIPTION 1 1A data input 2 1Y data output 3 2A data input 4 2Y data output 5 3A data input 6 3Y data output 7 GND ground (0 V) 8 4Y data output 9 4A data input 10 5Y data output 11 5A data input 12 6Y data output 13 6A data input 14 VCC supply voltage 2003 Oct 30 4 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 handbook, halfpage MNA839 14 1 2 3 4 5 6 7 8 14 13 12 11 10 9 1A 1Y 2A 2Y 3A 3Y GND 4Y 4A 5Y 5A 6Y 6A VCC Fig.1 Pin configuration. handbook, halfpage 1 14 GND(1) 1A VCC 7 2 3 4 5 6 1Y 2A 2Y 3A 3Y 13 12 11 10 9 6A 6Y 5A 5Y 4A 8 GNDTop view 4Y MBL760 Fig.2 Pin configuration DHVQFN14. (1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input. handbook, halfpage MNA840 1A 1Y 1 2 2A 2Y3 4 3A 3Y 5 6 4A 4Y9 8 5A 5Y 11 10 6A 6Y 13 12 Fig.3 Logic symbol. handbook, halfpage MNA841 21 43 65 89 1011 1213 Fig.4 IEC logic symbol. 2003 Oct 30 5 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 handbook, halfpage MNA842 1A 1Y 1 2 2A 2Y3 4 3A 3Y 5 6 4A 4Y9 8 5A 5Y 11 10 6A 6Y 13 12 Fig.5 Functional diagram. handbook, halfpage MNA843 A Y Fig.6 Logic diagram (one Schmitt trigger). 2003 Oct 30 6 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134); voltages are referenced to GND (ground = 0 V). Notes 1. For DIP14 packages: above 70 °C the value of PD derates linearly with 12 mW/K. 2. For SO14 packages: above 70 °C the value of PD derates linearly with 8 mW/K. For (T)SSOP14 packages: above 60 °C the value of PD derates linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C the value of PD derates linearly with 4.5 mW/K. SYMBOL PARAMETER CONDITIONS 74HC14 74HCT14 UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature see DC and AC characteristics per device −40 +25 +85 −40 +25 +85 °C −40 − +125 −40 − +125 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7 V IIK input diode current VI < −0.5 V or VI > VCC + 0.5 V − ±20 mA IOK output diode current VO < −0.5 V or VO > VCC + 0.5 V − ±20 mA IO output source or sink current −0.5 V < VO < VCC + 0.5 V − ±25 mA ICC; IGND VCC or GND current − 50 mA Tstg storage temperature −65 +150 °C Ptot power dissipation Tamb = −40 to +125 °C DIP14 packages; note 1 − 750 mW Other packages; note 2 − 500 mW 2003 Oct 30 7 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 DC CHARACTERISTICS Type 74HC14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). SYMBOL PARAMETER TEST CONDITIONS MIN. TYP.(1) MAX. UNIT OTHER VCC (V) Tamb = 25 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA 2.0 1.9 2.0 − V IO = −20 µA 4.5 4.4 4.5 − V IO = −20 µA 6.0 5.9 6.0 − V IO = −4.0 mA 4.5 3.98 4.32 − V IO = −5.2 mA 6.0 5.48 5.81 − V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA 2.0 − 0 0.1 V IO = 20 µA 4.5 − 0 0.1 V IO = 20 µA 6.0 − 0 0.1 V IO = 4.0 mA 4.5 − 0.15 0.26 V IO = 5.2 mA 6.0 − 0.16 0.26 V ILI input leakage current VI = VCC or GND 6.0 − − 0.1 µA ICC quiescent supply current VI = VCC or GND; IO = 0 6.0 − − 2.0 µA Tamb = −40 to +85 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA 2.0 1.9 − − V IO = −20 µA 4.5 4.4 − − V IO = −20 µA 6.0 5.9 − − V IO = −4.0 mA 4.5 3.84 − − V IO = −5.2 mA 6.0 5.34 − − V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA 2.0 − − 0.1 V IO = 20 µA 4.5 − − 0.1 V IO = 20 µA 6.0 − − 0.1 V IO = 4.0 mA 4.5 − − 0.33 V IO = 5.2 mA 6.0 − − 0.33 V ILI input leakage current VI = VCC or GND 6.0 − − 1.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 6.0 − − 20 µA 2003 Oct 30 8 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 Note 1. All typical values are measured at Tamb = 25 °C. Tamb = −40 to +125 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA 2.0 1.9 − − V IO = −20 µA 4.5 4.4 − − V IO = −20 µA 6.0 5.9 − − V IO = −4.0 mA 4.5 3.7 − − V IO = −5.2 mA 6.0 5.2 − − V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA 2.0 − − 0.1 V IO = 20 µA 4.5 − − 0.1 V IO = 20 µA 6.0 − − 0.1 V IO = 4.0 mA 4.5 − − 0.4 V IO = 5.2 mA 6.0 − − 0.4 V ILI input leakage current VI = VCC or GND 6.0 − − 1.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 6.0 − − 40 µA SYMBOL PARAMETER TEST CONDITIONS MIN. TYP.(1) MAX. UNIT OTHER VCC (V) 2003 Oct 30 9 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 Type 74HCT14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Note 1. All typical values are measured at Tamb = 25 °C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP.(1) MAX. UNIT OTHER VCC (V) Tamb = 25 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA 4.5 4.4 4.5 − V IO = −4.0 mA 4.5 3.98 4.32 − V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA 4.5 − 0 0.1 V IO = 4.0 mA 4.5 − 0.15 0.26 V ILI input leakage current VI = VCC or GND 5.5 − − 0.1 µA ICC quiescent supply current VI = VCC or GND; IO = 0 5.5 − − 2.0 µA ∆ICC additional supply current per input VI = VCC − 2.1 V; IO = 0 4.5 to 5.5 − 30 108 µA Tamb = −40 to +85 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA 4.5 4.4 − − V IO = −4.0 mA 4.5 3.84 − − V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA 4.5 − − 0.1 V IO = 4.0 mA 4.5 − − 0.33 V ILI input leakage current VI = VCC or GND 5.5 − − 1.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 5.5 − − 20 µA ∆ICC additional supply current per input VI = VCC − 2.1 V; IO = 0 4.5 to 5.5 − − 135 µA Tamb = −40 to +125 °C VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA 4.5 4.4 − − V IO = −4.0 mA 4.5 3.7 − − V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA 4.5 − − 0.1 V IO = 4.0 mA 4.5 − − 0.4 V ILI input leakage current VI = VCC or GND 5.5 − − 1.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 5.5 − − 40 µA ∆ICC additional supply current per input VI = VCC − 2.1 V; IO = 0 4.5 to 5.5 − − 147 µA 2003 Oct 30 10 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 TRANSFER CHARACTERISTICS Type 74HC At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Note 1. All typical values are measured at Tamb = 25 °C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT WAVEFORMS VCC (V) Tamb = 25 °C; note 1 VT+ positive-going threshold Figs 7 and 8 2.0 0.7 1.18 1.5 V 4.5 1.7 2.38 3.15 V 6.0 2.1 3.14 4.2 V VT− negative-going threshold Figs 7 and 8 2.0 0.3 0.52 0.90 V 4.5 0.9 1.40 2.00 V 6.0 1.2 1.89 2.60 V VH hysteresis (VT+ − VT−) Figs 7 and 8 2.0 0.2 0.66 1.0 V 4.5 0.4 0.98 1.4 V 6.0 0.6 1.25 1.6 V Tamb = −40 to +85 °C VT+ positive-going threshold Figs 7 and 8 2.0 0.7 − 1.5 V 4.5 1.7 − 3.15 V 6.0 2.1 − 4.2 V VT− negative-going threshold Figs 7 and 8 2.0 0.3 − 0.90 V 4.5 0.90 − 2.00 V 6.0 1.20 − 2.60 V VH hysteresis (VT+ − VT−) Figs 7 and 8 2.0 0.2 − 1.0 V 4.5 0.4 − 1.4 V 6.0 0.6 − 1.6 V Tamb = −40 to +125 °C VT+ positive-going threshold Figs 7 and 8 2.0 0.7 − 1.5 V 4.5 1.7 − 3.15 V 6.0 2.1 − 4.2 V VT− negative-going threshold Figs 7 and 8 2.0 0.30 − 0.90 V 4.5 0.90 − 2.00 V 6.0 1.2 − 2.60 V VH hysteresis (VT+ − VT−) Figs 7 and 8 2.0 0.2 − 1.0 V 4.5 0.4 − 1.4 V 6.0 0.6 − 1.6 V 2003 Oct 30 11 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 Family 74HCT At recommended operating conditions: voltages are referenced to GND (ground = 0 V) Note 1. All typical values are measured at Tamb = 25 °C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT WAVEFORMS VCC (V) Tamb = 25 °C; note 1 VT+ positive-going threshold Figs 7 and 8 4.5 1.2 1.41 1.9 V 5.5 1.4 1.59 2.1 V VT− negative-going threshold Figs 7 and 8 4.5 0.5 0.85 1.2 V 5.5 0.6 0.99 1.4 V VH hysteresis (VT+ − VT−) Figs 7 and 8 4.5 0.4 0.56 − V 5.5 0.4 0.60 − V Tamb = −40 to +85 °C VT+ positive-going threshold Figs 7 and 8 4.5 1.2 − 1.9 V 5.5 1.4 − 2.1 V VT− negative-going threshold Figs 7 and 8 4.5 0.5 − 1.2 V 5.5 0.6 − 1.4 V VH hysteresis (VT+ − VT−) Figs 7 and 8 4.5 0.4 − − V 5.5 0.4 − − V Tamb = −40 to +125 °C VT+ positive-going threshold Figs 7 and 8 4.5 1.2 − 1.9 V 5.5 1.4 − 2.1 V VT− negative-going threshold Figs 7 and 8 4.5 0.5 − 1.2 V 5.5 0.6 − 1.4 V VH hysteresis (VT+ − VT−) Figs 7 and 8 4.5 0.4 − − V 5.5 0.4 − − V 2003 Oct 30 12 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 AC CHARACTERISTICS Type 74HC GND = 0 V; tf = tf = 6 ns; CL = 50 pF Note 1. All typical values are measured at Tamb = 25 °C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT WAVEFORMS VCC (V) Tamb = 25 °C; note 1 tPHL/tPLH propagation delay nA to nY see Fig.9 2.0 − 41 125 ns 4.5 − 15 25 ns 6.0 − 12 21 ns tTHL/tTLH output transition time see Fig.9 2.0 − 19 75 ns 4.5 − 7 15 ns 6.0 − 6 13 ns Tamb = −40 to +85 °C tPHL/tPLH propagation delay nA to nY see Fig.9 2.0 − − 155 ns 4.5 − − 31 ns 6.0 − − 26 ns tTHL/tTLH output transition time see Fig.9 2.0 − − 95 ns 4.5 − − 19 ns 6.0 − − 15 ns Tamb = −40 to +125 °C tPHL/tPLH propagation delay nA to nY see Fig.9 2.0 − − 190 ns 4.5 − − 38 ns 6.0 − − 32 ns tTHL/tTLH output transition time see Fig.9 2.0 − − 110 ns 4.5 − − 22 ns 6.0 − − 19 ns 2003 Oct 30 13 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 Type 74HCT GND = 0 V; tr = tf = 6 ns; CL = 50 pF Note 1. All typical values are measured at Tamb = 25 °C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT WAVEFORMS VCC (V) Tamb = 25 °C; note 1 tPHL/tPLH propagation delay nA to nY see Fig.9 4.5 − 20 34 ns tTHL/tTLH output transition time see Fig.9 4.5 − 7 15 ns Tamb = −40 to +85 °C tPHL/tPLH propagation delay nA to nY see Fig.9 4.5 43 − − ns tTHL/tTLH output transition time see Fig.9 4.5 19 − − ns Tamb = −40 to +125 °C tPHL/tPLH propagation delay nA to nY see Fig.9 4.5 − − 51 ns tTHL/tTLH output transition time see Fig.9 4.5 − − 22 ns TRANSFER CHARACTERISTIC WAVEFORMS MNA844 VO VIVH VT+VT− Fig.7 Transfer characteristic. handbook, halfpage MNA845 VO VI VH VT+ VT− Fig.8 The definitions of VT+, VT− and VH. VT+ and VT− are between limits of 20% and 70%. 2003 Oct 30 14 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 handbook, halfpage 0 2.0 50 0 10 20 30 40 0.4 0.8 1.2 1.6 MNA846 ICC (m A) VI (V) Fig.9 Typical 74HC14 transfer characteristics. VCC = 2 V. handbook, halfpage 0 5 1.0 0 0.2 0.4 0.6 0.8 1 2 3 4 MNA847 ICC (mA) VI (V) Fig.10 Typical 74HC14 transfer characteristics. VCC = 4.5 V. handbook, halfpage 0 6.0 ICC (mA) VI (V) 1.0 0 0.2 0.4 0.6 0.8 1.2 2.4 3.6 4.8 MNA848 Fig.11 Typical 74HC14 transfer characteristics. VCC = 6 V. handbook, halfpage 0 5 1.5 0 0.3 0.6 0.9 1.2 1 2 3 4 MNA849 ICC (mA) VI (V) Fig.12 Typical 74HCT14 transfer characteristics. VCC = 4.5 V. 2003 Oct 30 15 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 handbook, halfpage 0 1 2 3 6 1.8 0 0.6 0.3 1.2 1.5 0.9 4 5 MNA850 ICC (mA) VI (V) Fig.13 Typical 74HCT14 transfer characteristics. VCC = 5.5 V. AC WAVEFORMS handbook, halfpage MNA722 tPLHtPHL VMVM 90% 10% VM VM nY output nA input VI GND VOH VOL tTLHtTHL Fig.14 The input (nA) to output (nY) propagation delays and output transitions times. 74HC14: VM = 50%; VI = GND to VCC. 74HCT14: VM = 1.3 V; VI = GND to 3.0 V. 2003 Oct 30 16 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 handbook, full pagewidth open GND 50 pF VCC VCC VI VO MNA742 D.U.T. CL =RT RL = 1 kW PULSE GENERATOR S1 Fig.15 Load circuitry for switching times. TEST S1 tPLH/tPHL open tPLZ/tPZL VCC tPHZ/tPZH GND Definitions for test circuit: RL = Load resistor. CL = load capacitance including jig and probe capacitance. RT = termination resistance should be equal to the output impedance Zo of the pulse generator. 2003 Oct 30 17 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 APPLICATION INFORMATION The slow input rise and fall times cause additional power dissipation. This can be calculated using the following formula: Pad = fi × (tr × ICC(AV) + tf × ICC(AV)) × VCC. Where: Pad = additional power dissipation (µW); fi = input frequency (MHz); tr = input rise time (µs); 10% to 90%; tf = input fall time (µs); 10% to 90%; ICC(AV) = average additional supply current (µA). ICC(AV) differs with positive or negative input transitions, as shown in Figs 16 and 17. For 74HC/HCT14 used in a relaxation oscillator circuit, see Fig.18. Note to application information All values given are typical unless otherwise specified. handbook, halfpage 0 2 4 6 400 300 100 0 200 MNA852 ICC(AV) (m A) VCC (V) positive - going edge negative - going edge negative - going Fig.16 Average ICC for 74HC14 Schmitt trigger devices. Linear change of VI between 0.1VCC to 0.9VCC handbook, halfpage 0 2 4 6 400 300 100 0 200 MNA853 VCC (V) positive - going egde positive - going edge negative - going egde negative - going edge ICC(AV) (m A) Fig.17 Average ICC for HCT Schmitt trigger devices. Linear change of VI between 0.1VCC to 0.9VCC. handbook, halfpage MNA854 R C Fig.18 Relaxation oscillator using 74HC/HCT14. 74HC14 : f 1T--- 1 0.8 RC-------------------≈= 74HCT14 : f 1T--- 1 0.67 RC----------------------≈= 2003 Oct 30 18 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 PACKAGE OUTLINES UNIT Amax. A1 A2 A3 bp c D (1) E(1) (1)e HE L Lp Q Zywv q REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm inches 1.75 0.250.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.0 0.4 SOT108-1 X w M q AA1 A2 bp D HE Lp Q detail X E Z e c L v M A (A )3 A 7 8 1 14 y 076E06 MS-012 pin 1 index 0.069 0.0100.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.35 0.34 0.16 0.15 0.05 1.05 0.0410.2440.228 0.028 0.024 0.028 0.0120.01 0.25 0.01 0.0040.0390.016 99-12-27 03-02-19 0 2.5 5 mm scale SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 2003 Oct 30 19 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 UNIT Amax. 1 2 (1) (1)b1 c D (1)ZE e MHL REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm inches DIMENSIONS (inch dimensions are derived from the original mm dimensions) SOT27-1 99-12-2703-02-13 A min. A max. b max.wMEe1 1.73 1.13 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 3.60 3.05 0.2542.54 7.62 8.25 7.80 10.0 8.3 2.24.2 0.51 3.2 0.068 0.044 0.021 0.015 0.77 0.73 0.014 0.009 0.26 0.24 0.14 0.12 0.010.1 0.3 0.32 0.31 0.39 0.33 0.0870.17 0.02 0.13 050G04 MO-001 SC-501-14 MH c (e )1 ME A L se a tin g pl an e A1 w M b1 e D A2 Z 14 1 8 7 b E pin 1 index 0 5 10 mm scale Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1 2003 Oct 30 20 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 UNIT A1 A2 A3 bp c D (1) E (2) (1)e HE L Lp Q Zywv q REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.150.05 0.95 0.80 0.30 0.19 0.2 0.1 5.1 4.9 4.5 4.3 0.65 6.6 6.2 0.4 0.3 0.72 0.38 8 0 o o0.13 0.10.21 DIMENSIONS (mm are the original dimensions) Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. 0.75 0.50 SOT402-1 MO-153 99-12-2703-02-18 w M bp D Z e 0.25 1 7 14 8 q AA1 A2 Lp Q detail X L (A )3 HE E c v M A X A y 0 2.5 5 mm scale TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 A max. 1.1 pin 1 index 2003 Oct 30 21 Philips Semiconductors Product specification Hex inverting Schmitt trigger 74HC14; 74HCT14 terminal 1 index area 0.51 A1 EhbUNIT ye 0.2 c REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 3.12.9 Dh 1.65 1.35 y1 2.6 2.4 1.15 0.85 e1 20.300.18 0.05 0.00 0.05 0.1 DIMENSIONS (mm are the original dimensions) SOT762-1 MO-241 - - -- - - 0.5 0.3 L 0.1 v 0.05 w 0 2.5 5 mm scale SOT762-1 DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; body 2.5 x 3 x 0.85 mm A(1) max. A A1 c detail X yy1 Ce L Eh Dh e e1 b 2 6 13 9 8 71 14 X D E C B A 02-10-17 03-01-27 terminal 1 index area AC C Bv M w
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