INTEGRATED_MODULE_WITH_ELECTROMAGNETIC_SHIELDING

US20210398914A1(19)UnitedStates(12)PatentApplicationPublication(lo)Pub.No.:US2021/0398914AlHaji-Rahimetal.(43)Pub.Date:Dec.23,2021(54)INTEGRATEDMODULEWITHHOIL21/56(2006.01)ELECTROMAGNETICSHIELDINGHOIL23/16(2006.01)HOIL23/31(2006.01)(71)Applicant:QorvoUS,Inc.,Greensboro,NC(US)(52)U.S.Cl.CPC.....HOIL23/552(2013.01);HOIL23/53238(72)Inventors:MohsenHaji-Rahim,ChapelHill,NC(2013.01);HOIL21/78(2013.01);HOIL(US);HowardJosephHolyoak,High23/53223(2013.01);HOIL24/16(2013.01);Point,NC(US)HOIL21/56(2013.01);HOIL21/561(2013.01);HOIL23/16(2013.01);HOIL(21)Appl.No.:17/467,59823/3121(2013.01);HOIL23/53252(2013.01)(22)Filed:Sep.7,2021(57)ABSTRACTThepresentdisclosurerelatestoashieldedintegratedmod­RelatedU.S.ApplicationDataule,whichincludesamodulesubstratewithanumberof(62)DivisionofapplicationNo.16/544,145,filedonAug.perimeterbondpads,atleastoneelectroniccomponent19,2019,nowPat.No.11,139,250,whichisadivi­attachedtothemodulesubstrateandencapsulatedbyamoldsionofapplicationNo.15/903,243,filedonFeb.23,compound,anumberofperimeterverticalshieldcontacts,2018,nowPat.No.10,410,972.andashieldingstructure.Theperimeterbondpadsaresurroundingtheatleastoneelectroniccomponentand(60)ProvisionalapplicationNo.62/462,455,filedonFeb.encapsulatedbythemoldcompound.Eachperimeterverti­23,2017.calshieldcontactiscoupledtoacorrespondingperimeterbondpadandextendsthroughthemoldcompound,suchthatPublicationClassificationatoptipofeachperimeterverticalshieldcontactisexposed(51)Int.Cl.atatopsurfaceofthemoldcompound.TheshieldingHOIL23/552(2006.01)structurecompletelycoversthetopsurfaceofthemoldHOIL23/532(2006.01)compoundandisincontactwiththeperimeterverticalHOIL21/78(2006.01)shieldcontacts.PatentApplicationPnblicationDec.23,2021Sheet1of7US2021/0398914AlPatentApplicationPnblicationDec.23,2021Sheet2of7US2021/0398914AlPatentApplicationPnblicationDec.23,2021Sheet3of7US2021/0398914AlPatentApplicationPnblicationDec.23,2021Sheet4of7US2021/0398914AlPatentApplicationPnblicationDec.23,2021Sheet5of7US2021/0398914AlIPatentApplicationPnblicationDec.23,2021Sheet6of7US2021/0398914AlPatentApplicationPnblicationDec.23,2021Sheet7of7US2021/0398914Al'‘SfCMUS2021/0398914AlDec.23,20211INTEGRATEDMODULEWITHshieldsthatdonotmateriallyaddtothesizeofthemoduleELECTROMAGNETICSHIELDINGbecomesmoredifficult.Thus,thereisaneedforanelec­tromagneticshieldthatisinexpensivetomanufactureonaRELATEDAPPLICATIONSlargescale,doesnotsubstantiallychangethesizeoftheintegratedmodule,andeffectivelydealswithEMIconcerns.[0001]Thisapplicationclaimsprioritytoandisadivi­sionalapplicationofU.S.patentapplicationSer.No.16/544,SUMMARY145,filedAug.19,2019.U.S.patentapplicationSer.No.16/544,145isadivisionalofU.S.patentapplicationSer.No.[0006]Thepresentdisclosurerelatestoanintegrated15/903,243,filedonFeb.23,2018,nowU.S.Pat.No.modulewithelectromagneticshielding,andaprocessfor10,410,972,whichclaimsthebenefitofprovisionalpatentmakingthesame.ThedisclosedshieldedintegratedmoduleapplicationSer.No.62/462,455,filedFeb.23,2017,theisformedfromanintegratedmoduleandashieldingstruc­disclosuresofwhichareherebyincorporatedhereinbyture.Theintegratedmoduleincludesamodulesubstratereferenceintheirentireties.withanumberofperimeterbondpads,atleastoneelectroniccomponent,amoldcompound,andanumberofperimeterFIELDOFTHEDISCLOSUREverticalshieldcontacts.Theatleastoneelectroniccompo­nentisattachedtoatopsurfaceofthemodulesubstrate.The[0002]Thepresentdisclosurerelatestoanintegratedperimeterbondpadsareformedonthetopsurfaceofthemoduleandaprocessformakingthesame,andmoremodulesubstrate,surroundingtheatleastoneelectronicparticularlytoanintegratedmodulewithelectromagneticcomponent,andelectricallycoupledtoground.Themoldshielding,andaprocesstoprovidetheelectromagneticcompoundresidesoverthetopsurfaceofthemoduleshieldingfortheintegratedmodule.substrateandencapsulatestheatleastonetopelectroniccomponent.Herein,atopsurfaceoftheintegratedmoduleisBACKGROUNDatopsurfaceofthemoldcompound,abottomsurfaceofthe[0003]Electroniccomponentshavebecomeubiquitousinintegratedmoduleisabottomsurfaceofthemodulesub­modernsociety.Theelectronicsindustryproudly,butrou­strate,andasidesurfaceoftheintegratedmoduleisatinely,announcesacceleratedclockingspeedsandsmallercombinationofasidesurfaceofthemoldcompoundandaintegratedmodules.Whilethebenefitsofthesedevicesaresidesurfaceofthemodulesubstrate.Eachperimeterverticalmyriad,smallerandfasterelectronicdevicescreateprob­shieldcontactisbondedtoacorrespondingperimeterbondlems.Inparticular,highclockspeedsinherentlyrequirefastpad,andextendsthroughthemoldcompound,suchthatatransitionsbetweensignallevels.Fasttransitionsbetweentoptipofeachperimeterverticalshieldcontactisexposedsignallevelscreateelectromagneticemissionsthroughoutatthetopsurfaceoftheintegratedmodule.Theshieldingtheelectromagneticspectrum.SuchemissionsareregulatedstructurecompletelycoversthetopsurfaceoftheintegratedbytheFederalCommunicationsCommission(FCC)andmoduleandisincontactwiththeperimeterverticalshieldotherregulatoryagencies.Furthermore,fastspeedinher­contacts.entlymeanshigherfrequencies.Higherfrequenciesmean[0007]Inoneembodimentoftheshieldedintegratedmod­shorterwavelengths.Shorterwavelengthsmeanthatshorterule,theshieldingstructurecompletelycoversthesidesur­conductiveelementsactasantennastobroadcastthesefaceoftheintegratedmodulewithoutcoveringthebottomelectromagneticemissions.Theseelectromagneticemis­surfaceoftheintegratedmodule.sionsradiatefromasourceandmayimpingeuponother[0008]Inoneembodimentoftheshieldedintegratedmod­electroniccomponents.Ifthesignalstrengthoftheemissionule,theshieldingstructureincludesafirstlayercompletelyattheimpingeduponelectroniccomponentishighenough,coveringthetopsurfaceandthesidesurfaceoftheinte­theemissionmayinterferewiththeoperationofthegratedmodule,andasecondlayeroverthefirstlayer.impingeduponelectroniccomponent.ThisphenomenonisHerein,thefirstlayerisformedofcopper,aluminum,silver,sometimescalledelectromagneticinterference(EMI)ororgold,andthesecondlayerisformedofnickel.crosstalk.DealingwithEMIandcrosstalkissometimes[0009]Inoneembodimentoftheshieldedintegratedmod­referredtoaselectromagneticcompatibility(EMC).Otherule,athicknessofthefirstlayerisbetween3pmand16pm,components,suchastransceivermodules,inherentlyhaveandathicknessofthesecondlayerisbetween1pmand3lotsofradiatingelementsthatraiseEMIconcerns.Thus,pm.evenelectronicmodulesthatdonothavehighclockspeeds[0010]Inoneembodimentoftheshieldedintegratedmod­mayhaveEMIissues.ule,theperimeterbondpadsareformedfromelectroless[0004]OnewaytoreduceEMIistoshieldtheintegratednickelelectrolesspalladiumimmersiongold(ENEPIG)ormodulesthatcauseEMIorthataresensitivetoEMI.electrolessnickelimmersiongold(ENIG).TheperimeterTypically,theshieldisformedfromaconductivematerialverticalshieldcontactsareformedofcopper,gold,oralloy.thatcoversthetopandatleastaportionofthesideofone[0011]Inoneembodimentoftheshieldedintegratedmod­circuitmodule.Whenelectromagneticemissionsfromtheule,adistancebetweeneachperimeterbondpadandtheatcircuitmodulestriketheinteriorsurfaceoftheconductiveleastoneelectroniccomponentisbetween60pmand100material,theelectromagneticemissionsareelectricallypm.shortedthroughthegroundedconductivematerial,thereby[0012]Inoneembodimentoftheshieldedintegratedmod­reducingemissions.Likewise,whenemissionsfromanotherule,theatleastoneelectroniccomponentisatleastoneofradiatingelementstriketheexteriorsurfaceoftheconduc­aflip-chipdie,awire-bondingdie,asurfacemounteddevicetivematerial,asimilarelectricalshortoccurs,andthe(SMD),aninductor,acapacitor,andaresistor.moduledoesnotsufferEMIfromothermodules.[0013]Inoneembodimentoftheshieldedintegratedmod­[0005]However,astheintegratedmodulescontinuetoule,theatleastoneelectroniccomponentincludesaflrstbecomesmallerfromminiaturization,creatingeffectiveelectroniccomponentandasecondelectroniccomponent.US2021/0398914AlDec.23,20212Herein,theperimeterbondpadssurroundthefirstelectroniccomponentandasecondelectroniccomponent.Theperim­componentandthesecondelectroniccomponent.eterbondpadssurroundthefirstelectroniccomponentand[0014]Inoneembodimentoftheshieldedintegratedmod­thesecondelectroniccomponent.ule,theintegratedmodulefurtherincludesanumberof[0020]Inoneembodimentoftheexemplaryprocess,eachinteriorbondpads,andanumberofinteriorverticalshieldintegratedmodulefurtherincludesanumberofinteriorbondcontacts.Theinteriorbondpadsareformedonthetoppads,andanumberofinteriorverticalshieldcontacts.surfaceofthemodulesubstrate,locatedbetweenthefirstHerein,theinteriorbondpadsareformedonthetopsurfaceelectroniccomponentandthesecondelectroniccomponent,ofthecorrespondingmodulesubstrate,locatedbetweentheandelectricallycoupledtoground.Eachinteriorverticalfirstelectroniccomponentandthesecondelectroniccom­shieldcontactisbondedtoacorrespondinginteriorbondponent,andelectricallycoupledtoground.Eachinteriorpad,andextendsthroughthemoldcompound,suchthataverticalshieldcontactisbondedtoacorrespondinginteriortoptipofeachinteriorverticalshieldcontactisexposedatbondpad,andextendsthroughthemoldcompound,suchthetopsurfaceoftheintegratedmodule.Theshieldingthatatoptipofeachinteriorverticalshieldcontactisstructureisincontactwiththeinteriorverticalshieldcon­exposedatthetopsurfaceofthemoldcompound.Thetacts.shieldingstructureisincontactwiththeinteriorvertical[0015]Accordingtoanexemplaryprocess,aprecursorshieldcontacts.packagehavinganumberofintegratedmodulesisprovided[0021]Inoneembodimentoftheexemplaryprocess,theinitially.Herein,aninter-moduleareaishorizontallyinshieldingstructureincludesafirstlayercompletelycoveringbetweentwoadjacentintegratedmodules.Eachintegratedthetopsurfaceandthesidesurfaceofeachindividualmoduleincludesamodulesubstratewithanumberofintegratedmodule,andasecondlayeroverthefirstlayer.perimeterbondpads,atleastoneelectroniccomponent,aThefirstlayerisformedofcopper,aluminum,silver,ormoldcompound,andanumberofperimeterverticalshieldgold,andthesecondlayerisformedofnickel.contacts.Theatleastoneelectroniccomponentandthe[0022]Inoneembodimentoftheexemplaryprocess,theperimeterbondpadsareonatopsurfaceofthemodulefirstlayerisformedbyanelectrolyticplatingprocessandthesubstrateandencapsulatedbythemoldcompound.Thesecondlayerisformedbyatleastoneofanelectrolessperimeterbondpadssurroundtheatleastoneelectronicplatingprocessandanelectrolyticplatingprocess.componentandareelectricallycoupledtoground.Each[0023]Accordingtoanexemplaryprocess,aprecursorperimeterverticalshieldcontactiscoupledtoacorrespond­packagehavinganumberofintegratedmodulesisprovidedingperimeterbondpad,andextendsthroughthemoldinitially.Herein,aninter-moduleareaishorizontallyincompound,suchthatatoptipofeachperimeterverticalbetweentwoadjacentintegratedmodules.Eachintegratedshieldcontactisexposedatatopsurfaceofthemoldmoduleincludesamodulesubstratewithanumberofcompound.Next,theprecursorpackageissingulatedateachperimeterbondpads,atleastoneelectroniccomponent,ainter-moduleareatoformanumberofindividualintegratedmoldcompound,andanumberofperimeterverticalshieldmodules.Atopsurfaceofeachindividualintegratedmodulecontacts.Theatleastoneelectroniccomponentandtheisatopsurfaceofthemoldcompound,abottomsurfaceofperimeterbondpadsareonatopsurfaceofthemoduleeachindividualintegratedmoduleisabottomsurfaceofthesubstrateandencapsulatedbythemoldcompound.Themodulesubstrate,andasidesurfaceofeachindividualperimeterbondpadssurroundtheatleastoneelectronicintegratedmoduleisacombinationofasidesurfaceofthecomponentandareelectricallycoupledtoground.Eachmoldcompoundandasidesurfaceofthemodulesubstrate.perimeterverticalshieldcontactisbondedtoacorrespond­Finally,ashieldingstructureisappliedtoeachindividualingperimeterbondpad,andextendsthroughthemoldintegratedmodule.Theshieldingstructurecompletelycov­compound,suchthatatoptipofeachperimeterverticalersthetopsurfaceandthesidesurfaceofeachindividualshieldcontactisexposedatatopsurfaceofthemoldintegratedmodule,andisincontactwiththeperimetercompound.Next,ashieldingstructureisappliedtotheverticalshieldcontacts.precursorpackagetoformashieldedpackage.Theshielding[0016]Inoneembodimentoftheexemplaryprocess,structurecompletelycoversatopsurfaceandasidesurfaceprovidingtheprecursorpackageincludesattachingtheatoftheprecursorpackage,suchthattheshieldingstructureisleastoneelectroniccomponenttoacorrespondingmoduleincontactwiththeperimeterverticalshieldcontactsasso­substrate,suchthattheperimeterbondpadsonthecorre­ciatedwitheachintegratedmodule.Finally,theshieldedspondingmodulesubstratesurroundtheatleastoneelec­packageissingulatedateachinter-moduleareatoformatroniccomponent,formingeachperimeterverticalshieldnumberofshieldedintegratedmodules.Herein,atopsur­contactcoupledtothecorrespondingperimeterbondpad,faceofeachshieldedintegratedmoduleiscompletelycov­applyingthemoldcompoundovereachmodulesubstratetoeredbytheshieldingstructure,andtheshieldingstructureencapsulatetheatleastoneelectroniccomponent,theperim­foreachshieldedintegratedmoduleremainsincontactwitheterbondpads,andtheperimeterverticalshieldcontacts,theperimeterverticalshieldcontacts.andthinningthemoldcompoundtoexposethetoptipof[0024]Thoseskilledintheartwillappreciatethescopeofeachperimeterverticalshieldcontact.thepresentdisclosureandrealizeadditionalaspectsthereof[0017]Inoneembodimentoftheexemplaryprocess,afterreadingthefollowingdetaileddescriptionofthepre­formingeachperimeterverticalshieldcontactisprovidedbyferredembodimentsinassociationwiththeaccompanyingawirebondingprocess.drawingfigures.[0018]Inoneembodimentoftheexemplaryprocess,BRIEFDESCRIPTIONOFTHEDRAWINGthinningthemoldcompoundisprovidedbyamechanicalFIGURESgrindingprocess.[0019]Inoneembodimentoftheexemplaryprocess,the[0025]TheaccompanyingdrawingfiguresincorporatedinatleastoneelectroniccomponentincludesafirstelectronicandformingapartofthisspecificationillustrateseveralUS2021/0398914AlDec.23,20213aspectsofthedisclosure,andtogetherwiththedescriptionhereintodescribearelationshipofoneelement,layer,orservetoexplaintheprinciplesofthedisclosure.regiontoanotherelement,layer,orregionasillustratedin[0026]FIGS.lA-lBprovideanexemplaryshieldedinte­theFigures.Itwillbeunderstoodthatthesetermsandthosegratedmoduleaccordingtooneembodimentofthepresentdiscussedaboveareintendedtoencompassdifferentorien­disclosure.tationsofthedeviceinadditiontotheorientationdepicted[0027]FIGS.2A-2Bprovideanalternativeshieldedinte­intheFigures.gratedmoduleaccordingtooneembodimentofthepresent[0036]Theterminologyusedhereinisforthepurposeofdisclosure.describingparticularembodimentsonlyandisnotintended[0028]FIGS.3A-3Bprovideanalternativeshieldedinte­tobelimitingofthedisclosure.Asusedherein,thesingulargratedmoduleaccordingtooneembodimentofthepresentforms“a,”“an,”and“the”areintendedtoincludethepluraldisclosure.formsaswell,unlessthecontextclearlyindicatesotherwise.[0029]FIGS.4-9provideexemplarystepsthatillustrateaItwillbefurtherunderstoodthattheterms“comprises,”processtoformtheexemplaryshieldedintegratedmodule“comprising,”“includes,”and/or“including”whenusedshowninFIG.lA.hereinspecifythepresenceofstatedfeatures,integers,steps,[0030]FIGS.10-11provideexemplarystepsthatillustrateoperations,elements,and/orcomponents,butdonotpre­aprocesstoformtheexemplaryshieldedintegratedmodulecludethepresenceoradditionofoneormoreotherfeatures,showninFIG.3A.integers,steps,operations,elements,components,and/or[0031]Itwillbeunderstoodthatforclearillustrations,groupsthereof.FIGS.1-11maynotbedrawntoscale.[0037]Unlessotherwisedefined,allterms(includingtech­nicalandscientificterms)usedhereinhavethesamemean­DETAILEDDESCRIPTIONingascommonlyunderstoodbyoneofordinaryskillinthe[0032]Theembodimentssetforthbelowrepresentthearttowhichthisdisclosurebelongs.Itwillbefurthernecessaryinformationtoenablethoseskilledinthearttounderstoodthattermsusedhereinshouldbeinterpretedaspracticetheembodimentsandillustratethebestmodeofhavingameaningthatisconsistentwiththeirmeaninginthepracticingtheembodiments.Uponreadingthefollowingcontextofthisspecificationandtherelevantartandwillnotdescriptioninlightoftheaccompanyingdrawingfigures,beinterpretedinanidealizedoroverlyformalsenseunlessthoseskilledintheartwillunderstandtheconceptsoftheexpresslysodefinedherein.disclosureandwillrecognizeapplicationsoftheseconcepts[0038]Thepresentdisclosurerelatestoanintegratednotparticularlyaddressedherein.Itshouldbeunderstoodmodulewithelectromagneticshielding,andaprocessforthattheseconceptsandapplicationsfallwithinthescopeofmakingthesame.FIGS.lAandIB(separatingelementsforthedisclosureandtheaccompanyingclaims.clarity)provideanexemplaryshieldedintegratedmodule10[0033]Itwillbeunderstoodthat,althoughthetermsfirst,accordingtooneembodimentofthepresentdisclosure.Forsecond,etc.maybeusedhereintodescribevariousele­thepurposeofthisillustration,theexemplaryshieldedments,theseelementsshouldnotbelimitedbytheseterms.integratedmodule10includesashieldingstructure12,aThesetermsareonlyusedtodistinguishoneelementfrommodulesubstrate14withperimeterbondpads16andanother.Forexample,afirstelementcouldbetermedainteriorbondpads18,afirstelectroniccomponent20,asecondelement,and,similarly,asecondelementcouldbesecondelectroniccomponent22,perimeterverticalshieldtermedafirstelement,withoutdepartingfromthescopeofcontacts24,interiorverticalshieldcontacts26,andamoldthepresentdisclosure.Asusedherein,theterm“and/or”compound28(onlyone/twoperimeterbondpad(s),one/twoincludesanyandallcombinationsofoneormoreoftheperimeterverticalshieldcontact(s),oneinteriorbondpad,associatedlisteditems.andoneinteriorverticalshieldcontactarelabeledwitha[0034]Itwillbeunderstoodthatwhenanelementsuchasreferencenumberforclarity).Herein,themodulesubstratealayer,region,orsubstrateisreferredtoasbeing“on”or14,thefirstelectroniccomponent20,thesecondelectronicextending“onto”anotherelement,itcanbedirectlyonorcomponent22,theperimeterbondpads16,theinteriorbondextenddirectlyontotheotherelementorinterveningele­pads18,theperimeterverticalshieldcontacts24,thementsmayalsobepresent.Incontrast,whenanelementisinteriorverticalshieldcontacts26,andthemoldcompoundreferredtoasbeing“directlyon”orextending“directly28formanintegratedmodule30withoutshielding.onto”anotherelement,therearenointerveningelements[0039]Indetail,themodulesubstrate14maybealami­present.Likewise,itwillbeunderstoodthatwhenanele­natehavinganumberoflaminatelayersandagroundplanementsuchasalayer,region,orsubstrateisreferredtoas(notshownforsimplificationandclarity).Theselaminatebeing“over”orextending“over”anotherelement,itcanbelayersofthemodulesubstrate14mayincludeprepregdirectlyoverorextenddirectlyovertheotherelementormaterial,andthegroundplaneisintheinteriorportionoftheinterveningelementsmayalsobepresent.Incontrast,whenmodulesubstrate14.Theperimeterbondpads16andtheanelementisreferredtoasbeing“directlyover”orextend­interiorbondpads18areformedonthetopsurfaceoftheing“directlyover”anotherelement,therearenointerveningmodulesubstrate14,andelectricallycoupledtothegroundelementspresent.Itwillalsobeunderstoodthatwhenanplanewithinthemodulesubstrate14(notshown).Theelementisreferredtoasbeing“connected”or“coupled”toperimeterbondpads16andtheinteriorbondpads18mayanotherelement,itcanbedirectlyconnectedorcoupledtobeformedfromthesamematerials,suchaselectrolesstheotherelementorinterveningelementsmaybepresent.Innickelelectrolesspalladiumimmersiongold(ENEPIG),contrast,whenanelementisreferredtoasbeing“directlyelectrolessnickelimmersiongold(ENIG),oranymetalconnected”or“directlycoupled”toanotherelement,theresuitableforwire-bonding.arenointerveningelementspresent.[0040]Thefirstelectroniccomponent20andthesecond[0035]Relativetermssuchas“below”or“above”orelectroniccomponent22areattachedtoatopsurfaceofthe“upper”or“lower”or“horizontal”or“vertical”maybeusedmodulesubstrate14.Indifferentapplications,theshieldedUS2021/0398914AlDec.23,20214integratedmodule10mayincludefewerormoreelectronicsidesurfaceofthemoldcompound28andasidesurfaceofcomponents.Thefirstelectroniccomponent20/thesecondthemodulesubstrate14isasidesurfaceoftheintegratedelectroniccomponent22maybeaflip-chipdie,awire­module30.Theshieldingstructure12completelycoversthebondingdie,asurfacemounteddevice(SMI)),aninductor,topsurfaceandthesidesurfaceoftheintegratedmodule30,acapacitor,aresistororotheractive/passivecomponent.whilethebottomsur