Application Note AN4140
Transformer Design Consideration for off-line Flyback
Converters using Fairchild Power Switch (FPSTM)
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
Rev. 1.0.0
1. Introduction
For flyback coverters, the transformer is the most important
factor that determines the performance such as the
efficiency, output regulation and EMI. Contrary to the
normal transformer, the flyback transformer is inherently an
inductor that provides energy storage, coupling and isolation
for the flyback converter. In the general transformer, the
current flows in both the primary and secondary winding at
the same time. However, in the flyback transformer, the
current flows only in the primary winding while the energy
in the core is charged and in the secondary winding while the
energy in the core is discharged. Usually gap is introduced
between the core to increase the energy storage capacity.
This paper presents practical design considerations of
transformers for off-line flyback converters employing
Fairchild Power Switch (FPS). In order to give insight to the
reader, practical design examples are also provided.
2. General Transformer design procedure
(1) Choose the proper core
Core type : Ferrite is the most widely used core material
for commercial SMPS (Switchied mode power supply)
applications. Various ferrite cores and bobbins are shown in
Figure 1. The type of the core should be chosen with regard
to system requirements including number of outputs,
physical height, cost and so on. Table 1 shows features and
typical application of various cores.
Figure 1. Ferrite core (TDK)
Table 1. Features and typical applications of various
cores
Core size : Actually, the initial selection of the core is
bound to be crude since there are too many variables. One
way to select the proper core is to refer to the manufacture's
core selection guide. If there is no proper reference, use the
table 2 as a starting point. The core recommended in table 1
is typical for the universal input range, 67kHz switching
frequency and 12V single output application. When the input
voltage range is 195-265 Vac (European input range) or the
switching frequency is higher than 67kHz, a smaller core can
be used. For an application with low voltage and/or multiple
outputs, usually a larger core should be used than
recommended in the table.
Table 2. Core quick selection table (For universal input
range, fs=67kHz and 12V single output)
Core Features Typical Applications
EE
EI
-Low cost Aux. power
Battery charger
EFD
EPC
-Low profile LCD Monitor
EER -Large winding window area
-Various bobbins for multiple
output
CRT monitor, C-TV
DVDP, STB
PQ -Large cross sectional area
-Relatively expensive
Output
Power
EI core EE core EPC core EER core
0-10W EI12.5
EI16
EI19
EE8
EE10
EE13
EE16
EPC10
EPC13
EPC17
10-20W EI22 EE19 EPC19
20-30W EI25 EE22 EPC25 EER25.5
30-50W EI28
EI30
EE25 EPC30 EER28
50-70W EI35 EE30 EER28L
70-100W EI40 EE35 EER35
100-150W EI50 EE40 EER40
EER42
150-200W EI60 EE50
EE60
EER49
AN4140 APPLICATION NOTE
2
©2002 Fairchild Semiconductor Corporation
Once the core type and size are determined, the following
variables are obtained from the core data sheet.
- Ae : The cross-sectional area of the core (mm2)
- Aw : Winding window area (mm2)
- Bsat : Core saturation flux density (tesla)
Figure 2 shows the Ae and Aw of a core. The typical B-H
characteristics of ferrite core from TDK (PC40) are shown in
Figure 3. Since the saturation flux density (Bsat) decreases as
the temperature increases, the high temperature character-
istics should be considered. If there is no reference data, use
Bsat =0.3~0.35 T.
Figure 2. Window Area and Cross Sectional Area
Figure 3. Typical B-H characteristics of ferrite core
(TDK/PC40)
(2) Determine the primary side inductance (Lm) of
the transformer
In order to determine the primary side inductance, the
following variables should be determined first. (For a
detailed design procedure, please refer to the application
note AN4137.)
- Pin : Maximum input power
- fs : Switching frequency of FPS device
- VDCmin : Minimum DC link voltage
- Dmax : Maximum duty cycle
- KRF : Ripple factor, which is defined at the minimum input
voltage and full load condition, as shown in Figure 4. For
DCM operation, KRF = 1 and for CCM operation KRF < 1.
The ripple factor is closely related with the transformer size
and the RMS value of the MOSFET current. Even though
the conduction loss in the MOSFET can be reduced through
reducing the ripple factor, too small a ripple factor forces an
increase in transformer size. Considering both efficiency and
core size, it is reasonable to set KRF = 0.3-0.5 for the
universal input range and KRF = 0.4-0.8 for the European
input range. Meanwhile, in the case of low power
applications below 5W where size is most critical, a
relatively large ripple factor is used in order to minimize the
transformer size. In that case, it is typical to set KRF = 0.5-
0.7 for the universal input range and KRF = 1.0 for the
European input range.
Figure 4. MOSFET Drain Current and Ripple Factor (KRF)
With the given variables, the primary side inductance, Lm is
obtained as
AwAwAwAw
AeAeAeAe
100
500
400
300
200
800 1600
0
0
Magnetic field H (A/m )
Fl
ux
d
en
sit
y
B
(m
T)
M agnetization Curves (typical)
M aterial :PC40
100 ℃℃℃℃
120 ℃℃℃℃
60 ℃℃℃℃
25 ℃℃℃℃
I∆ EDCI
EDC
RF I
IK
2
∆
=
CCM operation : KRF < 1
I∆ EDCI
EDC
RF I
IK
2
∆
=
DCM operation : KRF =1
peak
dsI
peak
dsI
Dmax
Dmax
Lm
VDC
min Dmax⋅( )
2
2PinfsKRF
----------------------------------------------= (1)
APPLICATION NOTE AN4140
3
©2002 Fairchild Semiconductor Corporation
where VDCmin is the minimum DC input voltage, Dmax is the
maximum duty cycle, Pin is the maximum input power, fs is
the switching frequency of the FPS device and KRF is the
ripple factor.
Once Lm is determined, the maximum peak current and RMS
current of the MOSFET in normal operation are obtained as
With the chosen core, the minimum number of turns for the
transformer primary side to avoid the core saturation is given
by
where Lm is the primary side inductance, Iover is the FPS
pulse-by-pulse current limit level, Ae is the cross-sectional
area of the core and Bsat is the saturation flux density in
tesla.
If the pulse-by-pulse current limit level of FPS is larger than
the peak drain current of the power supply design, it may
result in excessive transformer size since Iover is used in
determining the minimum primary side turns as shown in
equation (6). Therefore, it is required to choose a FPS with
proper current limit specifications or to adjust the peak drain
current close to Iover by increasing the ripple factor as shown
in Figure 5. It is reasonable to design Idspeak to be 70-80% of
Iover considering the transient response and tolerance of Iover.
Figure 5. Adjustment peak drain current
(3) Determine the number of turns for each output
Figure 6 shows the simplified diagram of the transformer,
whrere Vo1 stands for the reference output that is regulated
by the feedback control while Vo(n) stands for the n-th
output.
First, determine the turns ratio (n) between the primary side
and the feedback controlled secondary side as a reference.
where Np and Ns1 are the number of turns for primary side
and reference output, respectively, Vo1 is the output voltage
and VF1 is the diode (DR1) forward voltage drop of the
reference output that is regulated by the feedback control.
Then, determine the proper integer for Ns1 so that the
resulting Np is larger than Npmin obtained from equation (6).
The number of turns for the other output (n-th output) is
determined as
The number of turns for Vcc winding is determined as
where Vcc* is the nominal value of the supply voltage of the
FPS device, and VFa is the forward voltage drop of Da as
defined in Figure 6. Since Vcc increases as the output load
increases, it is proper to set Vcc* as Vcc start voltage (refer to
the data sheet) to avoid triggering the over voltage protection
during normal operation.
Figure 6. Simplified diagram of the transformer
Ids
peak IEDC
∆I
2
-----+= (2)
Ids
rms 3 IEDC( )
2 ∆I
2
-----
2+
Dmax
3
--------------= 3( )
where IEDC
Pin
VDC
min Dmax⋅
--------------------------------------= 4( )
and ∆I
VDC
min Dmax
Lmfs
-----------------------------------= (5)
NP
min LmIover
BsatAe
------------------- 106 (turns)×= (6)
I∆ EDCI
Increasing ripple
factor (KRF)
peak
dsI
Pulse-by-pulse current limit of FPS (Iover)
I∆
peak
dsI
Decreasing pirmary
side Inductance (Lm)=
70-80% of Iover
n
VR0
Vo1 VF1+
--------------------------
NP
Ns1
---------= = (7)
Ns n( )
Vo n( ) VF n( )+
Vo1 VF1+
---------------------------------= Ns1⋅ turns( ) 8( )
Na
Vcc* VFa+
Vo1 VF1+
----------------------------= Ns1⋅ turns( ) 9( )
Np
NS1
-
VRO
+
DR1
Na
Da
NS(n)
DR(n) +
VO(n)
-
+
VO1
-
+ VF(n) -
+ VF1 -- VFa +
+
Vcc*
-
AN4140 APPLICATION NOTE
4
©2002 Fairchild Semiconductor Corporation
Once the number of turns on the primary side have been
determined, the gap length of the core is obtained through
approximation as
where AL is the AL-value with no gap in nH/turns2, Ae is the
cross sectional area of the core as shown in Figure 2, Lm is
specified in equation (1) and Np is the number of turns for
the primary side of the transformer
(4) Determine the wire diameter for each
winding
The wire diameter is determined based on the rms current
through the wire. The current density is typically 5A/mm2
when the wire is long (>1m). When the wire is short with a
small number of turns, a current density of 6-10 A/mm2 is
also acceptable. Avoid using wire with a diameter larger than
1 mm to avoid severe eddy current losses as well as to make
winding easier. For high current output, it is better to use
parallel windings with multiple strands of thinner wire to
minimize skin effect.
3. Transformer Construction Method.
(1) Winding Sequence
(a) Primary winding
Figure 7. Primary side winding
It is typical to place all the primary winding or a portion of
the primary winding innermost on the bobbin. This
minimizes the length of wire, reducing the conduction loss in
the wire. The EMI noise radiation can be reduced, since the
other windings can act as Faraday shields. When the primary
side winding has more than two layers, the innermost layer
winding should start from the drain pin of FPS as shown in
Figure 7. This allows the winding driven by the highest
voltage to be shielded by other windings, thereby
maximizing the shielding effect.
(b) Vcc winding
In general, the voltage of each winding is influenced by the
voltage of the adjacent winding. The optimum placement of
the Vcc winding is determined by the over voltage protection
(OVP) sensitivity, the Vcc operating range and control
scheme.
-Over voltage protection (OVP) sensitivity : When the
output voltage goes above its normal operation value due to
some abnormal situation, Vcc voltage also increases. FPS
uses Vcc voltage to indirectly monitor the over voltage
situation in the secondary side. However, a RCD snubber
network acts as an another output as shown in Figure 8 and
Vcc voltage is also influenced by the snubber capacitor
voltage. Because the snubber voltage increases as the drain
current increases, OVP of FPS can be triggered not only by
the output over voltage condition, but also by the over load
condition.
The sensitivity of over voltage protection is closely related to
the physical distance between windings. If the Vcc winding
is close to the secondary side output winding, Vcc voltage
will change sensitively to the variation of the output voltage.
Meanwhile, if the Vcc winding is placed close to the primary
side winding, Vcc voltage will vary sensitively as the
snubber capacitor voltage changes.
Figure 8. Primary side winding
G 40πAe
NP
2
1000Lm
--------------------- 1
AL
------–
= mm( ) 10( )
3mm 3mm
........ Np/2 ......
....... Np/2 .....
.......... Ns .........
...... Na ...
To FPS Drain pin
Bobbin
Barrier tape
Insulation tape
Np
NS1
-
Vsn
+
Na
NS2
+
Vcc
-
+
VO2
-
+
VO1
-
APPLICATION NOTE AN4140
5
©2002 Fairchild Semiconductor Corporation
- Vcc operating range : As mentioned above, Vcc voltage is
influenced by the snubber capacitor voltage. Since the
snubber capacitor voltage changes according to drain
current, Vcc voltage can go above its operating range
triggering OVP in normal operation. In that case, Vcc
winding should be placed closest to the reference output
winding that is regulated by feedback control and far from
the primary side winding as shown in Figure 9.
Figure 9. Winding sequence to reduce Vcc variation
- Control scheme : In the case of primary side regulation,
the output voltages should follow the Vcc voltage tightly for
a good output regulation. Therefore, Vcc winding should be
placed close to the secondary windings to maximize the
coupling of the Vcc winding with the secondary windings.
Meanwhile, Vcc winding should be placed far from primary
winding to minimize coupling to the primary. In the case of
secondary side regulation, the Vcc winding can be placed
between the primary and secondary or on the outermost
position.
(c) Secondary side winding
When it comes to a transformer with multiple outputs, the
highest output power winding should be placed closest to the
primary side winding, to reduce leakage inductance and to
maximize energy transfer efficiency. If a secondary side
winding has relatively few turns, the winding should be
spaced to traverse the entire width of the winding area for
improved coupling. Using multiple parallel strands of wire
will also help to increase the fill factor and coupling for the
secondary windings with few turns as shown in Figure 10.
To maximize the load regulation, the winding of the output
with tight regulation requirement should be placed closest to
the winding of the reference output that is regulated by the
feedback control.
Figure 10. Multiple parallel strands winding
(2) Winding method
-Stacked winding on other winding: A common technique
for winding multiple outputs with the same polarity sharing a
common ground is to stack the secondary windings instead
of winding each output winding separately, as shown in
Figure 11. This approach will improve the load regulation of
the stacked outputs and reduce the total number of secondary
turns. The windings for the lowest voltage output provide the
return and part of the winding turns for the next higher
voltage output. The turns of both the lowest output and the
next higher output provide turns for succeeding outputs. The
wire for each output must be sized to accommodate its
output current plus the sum of the output currents of all the
output stacked on top of it.
-Stacked winding on other output: If a transformer has a
very high voltage and low current output, the winding can be
stacked on the lower voltage output as shown in Figure 12.
This approach provides better regulation and reduced diode
voltage stress for the stacked output. The wire and rectifier
diode for each output must be sized to accommodate its
output current plus the sum of the output currents of all the
output stacked on top of it.
3mm 3mm
.......... Np .........
........ Ns2 .......
..... Ns1 (Reference output) .....
...... Na (Vcc winding) .....
.............. Np ..............
.............. Np ..............
Secondary winding
(4 turns)
Secondary winding
(3 strands, 4 turns)
AN4140 APPLICATION NOTE
6
©2002 Fairchild Semiconductor Corporation
Figure 11. Stacked winding on other winding
Figure 12. Stacked winding on other output
(3) Minimization of Leakage Inductance
The winding order in a transformer has a large effect on the
leakage inductance. In a multiple output transformer, the
secondary with the highest output power should be placed
closest to the primary for the best coupling and lowest
leakage. The most common and effective way to minimize
the leakage inductance is a sandwich winding as shown in
Figure 13. Secondary windings with only a few turns should
be spaced across the width of the bobbin window instead of
being bunched together, in order to maximize coupling to the
primary. Using multiple parallel strands of wire is an
additional technique of increasing the fill factor and coupling
of a winding with few turns as shown in Figure 10.
Figure 13. Sandwich winding
(4) Transformer shielding
A major source of common mode EMI in Switched Mode
Power Supply (SMPS) is the parasitic capacitances coupled
to the switching devices. The MOSFET drain voltage drives
capacitive current through various parasitic capacitances.
Some portion of these capacitive currents flow into the
neutral line that is connected to the earth ground and
observed as common mode noise. By using an electrostatic
separation shield between the windings (at primary winding
side, or at secondary winding side, or both), the common
mode signal is effectively "shorted" to the ground and the
capacitive current is reduced. When properly designed, such
shielding can dramatically reduce the conducted and radiated
emissions and susceptibility. By using this technique, the
size of EMI filter can be reduced. The shield can be easily
implemented using copper foil or tightly wound wire. The
shield should be virtually grounded to a quiescent point such
as primary side DC link, primary ground or secondary
ground.
Figure 14 shows a shielding example, which allows the
removal of the Y-capacitor that is commonly used to reduce
common mode EMI. As can be seen, shields are used not
only on the bottom but also on the top of the primary
winding in order to cancel the coupling of parasitic capaci-
tances. Figure 15 also shows the detailed shielding
construction.
Np
NS1
DR1
VO1
NS2
DR2
VO2
Np
NS1
DR1
VO1
NS2
DR2
VO2
3mm 3mm
.............. Np/2 ..............
.............. Ns2 ..............
.............. Ns1 ..............
.............. Na ..............
.............. Np/2 ..............
AN4140 APPLICATION NOTE
7
©2003 Fairchild Semiconductor Corporation
Figure 14. Shielding example to remove Y-capacitor
(5) Practical examples of transformer
construction
As described in the above sections, there many factors that
should be considered in determining the winding sequence
and winding method. In this section some practical examples
of transformer construction are presented to give a compre-
hensive understanding of practical transformer construction.
Figure 15. Shielding method to remove Y-Capacitor
a) LCD monitor SMPS example
Figure 16 shows a simplified transformer schematic for
typical LCD monitor SMPS. The 5V output is for the Micro-
processor and 13V output is for the inverter input of LCD
back light. While 5V output is regulated with the feedback
control, 13V output is determined by the transformer turns
ratio and a stacked winding is usually used to maximize the
regulation.
Np
Na
NS
Drain
DC link
Shielding A
Shielding B
3mm 3mm
.............. Np ..............
Shield A
.............. Na ..............
.............. Ns ..............
Shield B
Primary Winding
#1 #2 #3 #4 #5
Winding Directio
Winding Direction
Insulation Tape Copper Foil
#1 #2 #3 #4 #5
TOP
BOTTOM
Insulation Tape
#1 #2 #3 #4 #5
Copper Foil
APPLICATION NOTE AN4140
8
©2003 Fairchild Semiconductor Corporation
Transformer construction Example A (Figure 17) : In this
example, the leakage inductance is minimized by employing
a sandwich winding. The Vcc winding is placed outside to
provide shielding effect. Since the Vcc winding is placed on
the top half of primary winding, the coupling between the
Vcc winding and 5V output winding is poor, which may
require a s
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