DTC3059datasheet

1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • DC/DC Converter - Load Switch - Adaptor Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) - 30 0.060 at VGS = - 10 V 7.6 a 2 nC 0.075 at VGS = - 4.5 V 6a S G D P-Channel MOSFET Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 7.6 a A TC = 85 °C - 5.8 TA = 25 °C - 6a, b, c TA = 85 °C - 5.2b, c Pulsed Drain Current IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 5.3 TA = 25 °C - 2.1b, c Maximum Power Dissipation TC = 25 °C PD 6.3 W TC = 85 °C 3.3 TA = 25 °C 2.5b, c TA = 85 °C 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t ≤ 5 s RthJA 40 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 15 20 RoHS COMPLIANT D G SD DTC3059 Administrator 附注 原厂代理商 深圳森利威尔电子有限公司 联系人：黄先生 手机：13760325070 QQ：2355368872 欢迎咨询,竭诚服务 2 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 30 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 85 °C - 5 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 7.2 A 0.055 0.060 Ω VGS = - 4.5 V, ID = - 6.0 A 0.066 0.075 Forward Transconductancea gfs VDS = - 15 V, ID = - 7.2 A 18 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 1340 pFOutput Capacitance Coss 215 Reverse Transfer Capacitance Crss 185 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 7.2 A 28 42 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 7.2 A 15 23 Gate-Source Charge Qgs 4.5 Gate-Drain Charge Qgd 7.2 Gate Resistance Rg f = 1 MHz 1.2 6 12 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 2.6 Ω ID ≅ - 5.8 A, VGEN = - 4.5 V, Rg = 1 Ω 50 75 ns Rise Time tr 140 210 Turn-Off Delay Time td(off) 30 45 Fall Time tf 18 27 Turn-On Delay Time td(on) VDD = - 15 V, RL = 2.6 Ω ID ≅ - 5.8 A, VGEN = - 10 V, Rg = 1 Ω 11 17 Rise Time tr 11 17 Turn-Off Delay Time td(off) 37 56 Fall Time tf 12 18 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 5.3 A Pulse Diode Forward Current ISM - 20 Body Diode Voltage VSD IS = - 5.8 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 5.8 A, dI/dt = - 100 A/µs, TJ = 25 °C 22 33 ns Body Diode Reverse Recovery Charge Qrr 15 25 nC Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 9 DTC3059 3 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On Resistance vs. Drain Current Gate Charge 0 4 8 12 16 20 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) - D ra in Cu rr e n t(A ) I D VGS = 10 thru 4 V VGS = 3 V 0.00 0.01 0.02 0.03 0.04 0.05 0 4 8 12 16 20 - O n- Re si st an ce (Ω ) R D S( on ) ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 0 6 12 18 24 30 - G at e- to - So u rc e Vo lta ge (V ) Qg - Total Gate Charge (nC) V G S VDS = 24 V VDS = 15 V ID = 7.2 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0.0 0.7 1.4 2.1 2.8 3.5 VGS - Gate-to-Source Voltage (V) - D ra in Cu rr e n t(A ) I D TC = 25 °C TC = 125 °C TC = - 55 °C 0 600 1200 1800 2400 0 6 12 18 24 30 Ciss VDS - Drain-to-Source Voltage (V) C - C ap ac ita nc e (pF ) Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (N o rm a liz ed ) - O n- Re si st an ce R D S( on ) VGS = 10 V, ID = 6.0 A VGS = 4.5 V, ID = 7.2 A DTC3059 4 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Forward Diode Voltage vs. Temp. Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 150 °C VSD - Source-to-Drain Voltage (V) - So u rc e Cu rr e n t(A ) I S TJ = 25 °C 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V ) V G S( th ) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0 4 8 12 16 20 - O n- R e si st an ce (Ω ) R D S( on ) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 7.2 A 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 Time (s) Po w e r (W ) Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 - D ra in Cu rr e n t(A ) I D 0.1 TA = 25 °C Single Pulse 1 ms 10 ms 1 s 10 s DC Limited by RDS(on)* BVDSS Limited 100 µs 100 ms DTC3059 5 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 TC - Case Temperature (°C) I D - D ra in Cu rr e n t(A ) Package Limited Power, Junction-to-Case 0 2 4 6 8 0 25 50 75 100 125 150 TC - Case Temperature (°C) Po w e r (W ) Power, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Po w e r (W ) DTC3059 6 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square Wave Pulse Duration (s) N o rm a liz ed Ef fe ct ive Tr a n si en t Th er m al Im pe da nc e 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 0.02 1 Normalized Thermal Transient Impedance, Junction-to-Foot 1 0.1 0.01 0.2 Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz ed Ef fe ct ive Tr a n si en t Th er m al Im pe da nc e 10-3 10-2 110-110-4 0.05 0.02 Single Pulse 0.1 DTC3059 1 Package outline - SOT89 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 E 2.29 2.60 0.090 0.102 B 0.44 0.56 0.017 0.022 E1 2.13 2.29 0.084 0.090 B1 0.36 0.48 0.014 0.019 e 1.50 BSC 0.059 BSC C 0.35 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC D 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 D1 1.62 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 D1 D A C B1 L EH E1 B e e1 3DFNDJH�,QIRUPDWLRQ