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RAPID COMMUNICATIONS
PHYSICAL REVIEW B, VOLUME 63, 161403~R!
malism the current on terminal i can be written as17
I i5
2e
h E2‘
‘
T¯ i j~E ,V !@ f i~E !2 f j~E !#dE , ~1!
where T¯ i j(E ,V) is the transmission coefficient from terminal
i to j and f i(E) is the Fermi function for terminal i. In the
presence of an applied bias, the energy levels are shifted and
T¯ i j(E ,V) is modified. The electronic structure and interac-
tions between nanotubes are modeled using the p-orbital
tight-binding Hamiltonian.18,19 Our conductance calculations
are based on single-particle linear-response theory. Thus,
electron-electron interactions are not included. As nanotubes
are perfect one dimensional quantum wires, the e-e interac-
tion effects may be important. For nanotubes, these were
shows the conductance values for armchair-armchair and
FIG. 1. ~a! A two-terminal nanotube junction can be formed by
bringing two tubes’ ends together in parallel and pointing opposite
directions (l is the contact length!. ~b! The transmission coefficient
T of the two armchair tube @~10,10!-~10,10!# junction as a function
of energy E for l564 Å . Interference of electron waves yields
resonances in transport. ~c! Current-voltage characteristics of the
~10,10!-~10,10! junction for l546 Å .
Contact resistance bet
Alper Buldum a
Department of Physics and Astronomy, The University of Nor
~Received 9 February 200
Fascinating properties of nanotubes arise when they
cation, we demonstrate that such nanotube junctions
tance between the tubes depends strongly on atomic st
the optimal electronic transport between nanotubes o
contact resistance can vary several orders of magnitud
negative differential resistance and nonlinear variation
new device applications.
DOI: 10.1103/PhysRevB.63.161403
Individual carbon nanotubes are perfect molecular wires
with well-known structural, electronic, and transport
properties.1–8 Nanoscale contacts can be formed with two or
more nanotubes. In this rapid communication, we present
fascinating properties of nanotubes when intermolecular
nanotube junctions are formed. It is demonstrated here that
these nanotube junctions have atomic scale characteristics
and the contact resistance depends strongly on the atomic
structure in the contact region. The optimal electronic trans-
port between the nanotubes occurs when the tubes are in the
atomic scale registry. It is also found that the contact resis-
tance can vary several orders of magnitude with atomic scale
movement. In some configurations the intermolecular con-
ductance is comparable to that of perfect nanotubes. Phe-
nomena such as the negative differential resistance and non-
linear variation of resistance with the contact area are found.
The large variation of transport properties found here is simi-
lar to the sensitive dependence of mechanical-frictional prop-
erties on atomic scale registry.9,10 These unusual properties
may lead to new nanoelectronic device applications.
Several techniques have been used to calculate the quan-
tum conductance of carbon nanotubes.8,12–15 Among these
the Green’s-function technique is effective and efficient
when localized orbital basis sets are used.8,14,15 In our calcu-
lations, the Landauer-Bu¨ttiker formalism is employed to cal-
culate the conductance and the I-V characteristics with the
surface Green’s-function matching method.15,16 In this for-
0163-1829/2001/63~16!/161403~4!/$20.00 63 1614
een carbon nanotubes
d Jian Ping Lu
Carolina at Chapel Hill, Chapel Hill, North Carolina 27599
published 5 April 2001!
orm intermolecular junctions. In this rapid communi-
ve atomic scale characteristics and the contact resis-
cture in the contact region. Our calculations show that
urs when the tubes are in atomic scale registry. The
ith atomic scale movements. Phenomena such as the
f resistance are found. These properties may lead to
PACS number~s!: 72.80.Rj, 71.15.Ap, 73.61.Wp
shown to be low energy effects (,1 meV).20,21 Further in-
vestigations may be required for these low energy regimes.
Intermolecular nanotube junctions can be formed in many
geometrical forms. For example, two tubes can be connected
in parallel, perpendicular, or two tubes ends can be brought
together. We have studied the quantum conductance and
current-voltage characteristics of these junctions for different
nanotube positions, orientations and chiralities. The simplest
two-terminal nanotube junction is constructed by bringing
two tubes’ ends together @see Fig. 1~a!#. This junction con-
sists of two semi-infinite tubes in parallel and pointing to
opposite directions. The equilibrium positions of these two
nanotubes are found using molecular dynamics.9 In equilib-
rium positions the tubes are in atomic scale registry and the
contact region structure is like the A-B stacking of graphite.
As the contact ~or interaction! region is finite this junction
shows quantum-interference effects. The interference of
waves transmitted and reflected from the ends of the tubes
yields resonances in electron transport as shown in Fig. 1~b!.
The number of resonances increases with increasing contact
length, l. This quantum-interference effect introduces the
negative differential resistance ~NDR! in the current-voltage
characteristics @shown in Fig. 1~c!#. NDR has many applica-
tions including high-speed switching, memory, and
amplification.22
An interesting feature of this junction is the sensitive de-
pendence of conductance on the contact length, l. Figure 2
©2001 The American Physical Society03-1
RAPID COMMUNICATIONS
ALPER BULDUM AND JIAN PING LU PHYSICAL REVIEW B 63 161403~R!
zigzag-zigzag tube junctions. In both cases the dependence
of conductance on l is nonlinear and quasiperiodic but the
periods are different. In the armchair tubes’ case @Fig. 2~a!#
the period is 3az (az52.46 Å , unit cell length of armchair
tubes!, which is the Fermi wavelength for armchair tubes.
The same periodicity was found in earlier experiments and
theoretical calculations on the scanning tunneling micros-
copy images of finite nanotubes.23 In zigzag tubes’ case,
however, the period is found to be the unit cell length (az
54.26 Å ). As the Fermi wavelength for zigzag tubes is
infinite, only atomic corrugation is responsible for the varia-
tion of conductance.
It is also interesting to note that the conductance values
are high and comparable to ideal tubes when the tubes are
in-registry. Therefore, this simple end-end contact geometry
is an ideal way of connecting multiple tubes in device appli-
cations. On the other hand, small displacements of tubes
from the in-registry configurations lead to dramatic reduction
in the intertube conductance. Thus, rapid switching between
high and low conductance states can be achieved and fast
atomic scale switches can be constructed by using these end-
end junctions. We also have investigated a mixed junction of
an armchair ~10,10! and a zigzag ~18,0! tube. In this case, the
conductance values are an order of magnitude smaller with
no apparent periodic variations.
A four-terminal junction can be formed by placing one
nanotube perpendicular to another as shown in Fig. 3~a!.
Multiprobe measurements can be performed on this
junction11 with current passing two terminals and voltage
measured using the other two. We find that the conductance
between the tubes depends strongly on the atomic structure
in the contact region. The conductance is high when two
tubes are in-registry where atoms from one tube are placed
on top of another like A-B stacking of graphite. Thus, an
armchair tube crossing a zigzag tube forms an in-registry
junction and the conductance is high. In contrast two perpen-
dicular armchair tubes forms an out-of-registry junction, the
conductance between the tubes is low.
In general, different transport properties can be achieved
by manipulating these junctions such as rotating or translat-
ing one of the tubes with respect to the other. In Figs. 3~b!
and 3~c! the variations of contact resistance with respect to
rotation angle Q between the tubes is presented. A large
variation of resistance is observed. Lower resistance values
FIG. 2. ~a! The variation of conductance at the Fermi energy as
a function of contact length, l for the ~10,10!-~10,10! junction. Each
pair of peaks form a period with length 3az (az52.46 Å unit-cell
length of armchair tubes!. ~b! Variation of conductance with l for
the ~18,0!-~18,0! junction. The period is the unit-cell length (az
54.26 Å ) for zigzag tubes.
16140
are found when the junction is in-registry configurations. In
the case of the ~18,0!-~10,10! junction the tubes are in-
registry at Q530,90,150°. In the ~10,10!-~10,10! junction
the tubes are in-registry at Q50,60,120,180°. Even when
the tubes are in-registry the contact resistance can be differ-
ent at different Q due to change in the contact area. For
example, in the ~18,0!-~10,10! junction, the resistance is
lower at Q530° than at Q590° as the contact area at Q
530° is larger. In Fig. 3~d!, the variation of resistance with
the translation of upper tube is shown for the ~18,0!-~10,10!
junction. The variation is small in comparison to the case of
rotating the tubes. The lowest resistance is achieved when
the contact structure is like A-A stacking of graphite.
When the junctions are placed on a substrate, electronic
contact can be significantly enhanced by the structural relax-
ation of the tubes and adhesion between tubes and the sub-
strate. We investigate the effect of relaxation by performing
molecular dynamics simulations using empirical potentials.24
The cross junction is relaxed on a rigid surface25 and con-
stant forces ~3.0 nN! are applied to the ends of the upper tube
~of length 127 Å ) to simulate the effect of substrate adhe-
sion. An example of relaxed junction is shown in Fig. 4~a!.
Current-voltage characteristics of rigid and relaxed cross
junctions are presented in Figs. 4~b! and 4~c! for two differ-
ent nanotube junctions. We found that, when tubes are in-
registry, the resistance drops dramatically with relaxation
and/or applying forces. In contrast, when the tubes are out of
registry, the change in resistance with relaxation and/or ap-
plying forces is small. For example, in the case of the ~18,0!-
~10,10! ~in-registry! junction @Fig. 4~b!# the resistance is
2.05 MV for rigid tubes but reduced to 682 KV after re-
laxation. When forces are applied the resistance drops to
121 KV . On the other hand, two perpendicular ~10,10!
tubes are out of registry @Fig. 4~c!#, the resistance between
FIG. 3. ~a! A model of four-terminal junction formed by cross-
ing two nanotubes. The terminal labels, rotation angle, Q and the
translation directions are shown. The tubes are considered to be
rigid. The current is passing between 1 and 4 and voltage is mea-
sured between 2 and 3. ~b! Contact resistance of the ~18,0!-~10,10!
junction as a function of rotation angle Q . The tubes are in-registry
at Q530,90,150°. ~c! Resistance of the ~10,10!-~10,10! junction.
The tubes are in-registry at Q50,60,120,180°. ~d! Resistance of the
~18,0!-~10,10! junction as functions of translation of one tube rela-
tive to the other in the x and y directions.
3-2
the two conducting channels of the nanotube are extended
states around the whole circumference. Increasing the tube
size, though increasing the geometrical contact area, in fact
reduces the relative weight of conducting channel wave func-
RAPID COMMUNICATIONS
CONTACT RESISTANCE BETWEEN CARBON NANOTUBES PHYSICAL REVIEW B 63 161403~R!
tubes is 3.36 MV for the rigid junction and decreases to
3.21 MV when the junction is relaxed. Applying forces re-
duces the resistance to 1.66 MV .
The contact resistance we have calculated is in good
agreement with recent experiment11 which found
90–360 KV resistances for metal-metal cross junctions on a
surface. Our results suggest that modest pressure and/or
force can dramatically enhance the intertube transport if the
tubes are in-registry.
1 R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Prop-
erties of Carbon Nanotubes ~Imperial College Press, London,
1998!.
2 J. W. G. Wildo¨er, L. C. Venema, A. G. Rinzler, R. E. Smalley,
and C. Dekker, Nature ~London! 391, 59 ~1998!.
3 T. W. Odom, J. L. Huang, P. Kim, and C. M. Lieber, Nature
~London! 391, 62 ~1998!.
4 P. G. Collins, A. Zettl, H. Bando, A. Thess, and R. E. Smalley,
Science 278, 100 ~1997!.
5 M. Bockrath et al., Science 275, 192 ~1997!; S. J. Tans et al.,
Nature ~London! 386, 474 ~1998!.
6 S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature ~Lon-
don! 393, 49 ~1998!.
FIG. 4. ~a! An example of the relaxed cross junction with ap-
plied forces. Deformation in the contact region can be clearly seen.
The tubes are 127 Å long and only the central part of the junction
is shown here. ~b! I-V characteristics of a ~18,0!-~10,10! ~in-
registry! cross junction. The resistance value for the rigid case is
2.05 MV , but decreases to 682 KV with relaxation and to
121 KV with force. ~c! I-V characteristics of a ~10,10!-~10,10!
~out-of-registry! cross junction. The resistance values are 3.36,
3.21, and 1.66 MV for a rigid, relaxed without force and relaxed
with force cases.
16140
tion around the contact. However, we found the effect of
relaxation and forces are more dramatic for larger tubes as
they are more susceptible to deformation.
In conclusion, quantum transport properties of intermo-
lecular nanotube junctions are investigated. We find that
nanotube junctions have atomic scale characteristics in their
transport properties and the contact resistance strongly de-
pends on the atomic structure in the contact region. The op-
timal electronic transport between nanotubes occurs when
the tubes are in atomic scale registry. The contact resistance
can vary several orders of magnitude with atomic scale ma-
nipulations. The negative differential resistance is found in
nanotube end-end contacts. Similar properties may be found
in the contacts of other nanoscale wires and structures. These
unusual properties may lead to new atomic scale switches,
resistors, amplifiers, and memory devices.
Note added: Recent experiments26 performed at UNC-
Chapel Hill found that the contact resistance between nano-
tube and graphite varied more than an order of magnitude by
changing the angular alignment between tube and graphite
lattice, similar to the effects predicted in this article.
The authors thank R. Superfine, M. R. Falvo, S. Paulson,
and S. Washburn for stimulating discussions. This work is
supported by U. S. Office of Naval Research ~N00014-98-1-
0593!.
7 Z. Yao, H. W. C. Postma, L. Balents, and C. Dekker, Nature
~London! 402, 273 ~1999!.
8 L. Chico, V. H. Crespi, L. X. Benedict, S. G. Louie, and M. L.
Cohen, Phys. Rev. Lett. 76, 971 ~1996!.
9 A. Buldum and J. P. Lu, Phys. Rev. Lett. 83, 5050 ~1999!.
10 M. R. Falvo, R. M. Taylor, A. Helser, V. Chi, F. P. Brooks, S.
Washburn, and R. Superfine, Nature ~London! 397, 236 ~1999!.
11 M. S. Fuhrer et al., Science 288, 494 ~2000!; M. S. Fuhrer et al.,
Physica E 6, 868 ~2000!.
12 R. Tamura and M. Tsukada, Phys. Rev. B 58, 8120 ~1998!.
13 H. J. Choi and J. Ihm, Phys. Rev. B 59, 2267 ~1999!.
14 M. P. Anantram and T. R. Govindan, Phys. Rev. B 58, 4882
~1998!.
The low contact resistance in the case of in-registry con-
figurations can be understood considering the coupling of
electronic states between the tubes. Strong coupling occurs
when the tubes are in-registry. Although the magnitudes of
individual hopping integrals between the atoms on different
tubes are similar for in-registry and out-of-registry junctions,
phase coherence is achieved in the in-registry junction which
enhances the coupling of the electronic states between the
tubes.
We have also investigated the dependence of the contact
resistance on nanotube size and found that the resistance in-
crease with tube diameter. This effect is due to the fact that
3-3
15 M. B. Nardelli, Phys. Rev. B 60, 7878 ~1999!.
16 F. Garcia-Moliner and V. R. Velasco, Phys. Rep. 200, 83 ~1991!.
17 S. Datta, Electronic Transport in Mesoscopic Systems ~Cam-
bridge University Press, Cambridge, 1995!.
18 O. H. LeBlanc, Jr., J. Chem. Phys. 35, 1275 ~1961!; 36, 1082~E!
~1962!.
19 M. P. Gelfand and J. P. Lu, Phys. Rev. Lett. 68, 1050 ~1992!.
20 C. L. Kane, L. Balents, and M. P. A. Fischer, Phys. Rev. Lett. 79,
5086 ~1997!; R. Egger, A. O. Gogolin, ibid. 79, 5082 ~1997!.
21 M. Bockrath et al., Nature ~London! 397, 598 ~1999!.
22 For examples, please see B. G. Streetman, Solid State Electronic
Devices ~Prentice Hall, New Jersey, 1995!.
23 L. C. Venema et al., Science 283, 52 ~1999!; A. Rubio et al.,
Phys. Rev. Lett. 82, 3520 ~1999!; V. Meunier, P. Senet, and Ph.
Lambin, Phys. Rev. B 60, 7792 ~1999!.
24 D. W. Brenner, Phys. Rev. B 42, 9458 ~1990!.
25 The cross junction is relaxed on a rigid graphite surface in order
to have a substrate holding the junction. Periodic boundary con-
ditions are applied in lateral directions and all nanotube atoms
are allowed to move. Only the nanotubes are considered in con-
ductance calculations.
26 S. Paulson, A. Helser, M. B. Nardelli, R. M. Taylor II, M. R.
Falvo, R. Superfine, and S. Washburn, Science 290, 1742
~2000!.
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