Colloquium: Topological insulators
M. Z. Hasan*
Joseph Henry Laboratories, Department of Physics, Princeton University, Princeton, New
Jersey 08544, USA
C. L. Kane†
Department of Physics and Astronomy, University of Pennsylvania, Philadelphia,
Pennsylvania 19104, USA
�Published 8 November 2010�
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but
have protected conducting states on their edge or surface. These states are possible due to the
combination of spin-orbit interactions and time-reversal symmetry. The two-dimensional �2D�
topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum
Hall state. A three-dimensional �3D� topological insulator supports novel spin-polarized 2D Dirac
fermions on its surface. In this Colloquium the theoretical foundation for topological insulators and
superconductors is reviewed and recent experiments are described in which the signatures of
topological insulators have been observed. Transport experiments on HgTe/CdTe quantum wells are
described that demonstrate the existence of the edge states predicted for the quantum spin Hall
insulator. Experiments on Bi1−xSbx, Bi2Se3, Bi2Te3, and Sb2Te3 are then discussed that establish these
materials as 3D topological insulators and directly probe the topology of their surface states. Exotic
states are described that can occur at the surface of a 3D topological insulator due to an induced
energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological
magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana
fermions and may provide a new venue for realizing proposals for topological quantum computation.
Prospects for observing these exotic states are also discussed, as well as other potential device
applications of topological insulators.
DOI: 10.1103/RevModPhys.82.3045 PACS number�s�: 73.20.�r, 73.43.�f, 85.75.�d, 74.90.�n
CONTENTS
I. Introduction 3045
II. Topological Band Theory 3046
A. The insulating state 3046
B. The quantum Hall state 3047
1. The TKNN invariant 3047
2. Graphene, Dirac electrons, and Haldane
model 3047
3. Edge states and the bulk-boundary
correspondence 3048
C. Z2 topological insulator 3049
D. Topological superconductor, Majorana fermions 3050
1. Bogoliubov–de Gennes theory 3050
2. Majorana fermion boundary states 3051
3. Periodic Table 3051
III. Quantum Spin Hall Insulator 3052
A. Model system: Graphene 3052
B. HgTe/CdTe quantum well structures 3053
IV. 3D Topological Insulators 3054
A. Strong and weak topological insulators 3054
B. The first 3D topological insulator: Bi1−xSbx 3055
C. Second generation materials: Bi2Se3, Bi2Te3, and
Sb2Te3 3058
V. Exotic Broken Symmetry Surface Phases 3061
A. Quantum Hall effect and topological
magnetoelectric effect 3061
1. Surface quantum Hall effect 3061
2. Topological magnetoelectric effect and
axion electrodynamics 3061
B. Superconducting proximity effect 3062
1. Majorana fermions and topological
quantum computing 3062
2. Majorana fermions on topological insulators 3063
VI. Conclusion and Outlook 3064
Acknowledgments 3064
References 3065
I. INTRODUCTION
A recurring theme in condensed-matter physics has
been the discovery and classification of distinctive
phases of matter. Often, phases can be understood using
Landau’s approach, which characterizes states in terms
of underlying symmetries that are spontaneously bro-
ken. Over the past 30 years, the study of the quantum
Hall effect has led to a different classification paradigm
based on the notion of topological order �Thouless et al.,
1982; Wen, 1995�. The state responsible for the quantum
Hall effect does not break any symmetries, but it defines
a topological phase in the sense that certain fundamen-
tal properties �such as the quantized value of the Hall
*mzhasan@princeton.edu
†kane@physics.upenn.edu
REVIEWS OF MODERN PHYSICS, VOLUME 82, OCTOBER–DECEMBER 2010
0034-6861//82�4�/3045�23� © 2010 The American Physical Society3045
conductance and the number of gapless boundary
modes� are insensitive to smooth changes in material
parameters and cannot change unless the system passes
through a quantum phase transition.
In the past five years a new field has emerged in
condensed-matter physics based on the realization that
the spin-orbit interaction can lead to topological insulat-
ing electronic phases �Kane and Mele, 2005a, 2005b; Fu,
Kane, and Mele, 2007; Moore and Balents, 2007; Roy,
2009b� and on the prediction and observation of these
phases in real materials �Bernevig, Hughes, and Zhang,
2006; Fu and Kane, 2007; König et al., 2007; Hsieh et al.,
2008; Xia, Qian, Hsieh, Wray, et al., 2009; Zhang, Liu, et
al., 2009�. A topological insulator, like an ordinary insu-
lator, has a bulk energy gap separating the highest occu-
pied electronic band from the lowest empty band. The
surface �or edge in two dimensions� of a topological in-
sulator, however, necessarily has gapless states that are
protected by time-reversal symmetry. The topological in-
sulator is closely related to the two-dimensional �2D�
integer quantum Hall state, which also has unique edge
states. The surface �or edge� states of a topological insu-
lator lead to a conducting state with properties unlike
any other known one-dimensional �1D� or 2D electronic
systems. In addition to their fundamental interest, these
states are predicted to have special properties that could
be useful for applications ranging from spintronics to
quantum computation.
The concept of topological order �Wen, 1995� is often
used to characterize the intricately correlated fractional
quantum Hall states �Tsui, Stormer, and Gossard, 1982�,
which require an inherently many-body approach to un-
derstand �Laughlin, 1983�. However, topological consid-
erations also apply to the simpler integer quantum Hall
states �Thouless et al., 1982�, for which an adequate de-
scription can be formulated in terms of single-particle
quantum mechanics. In this regard, topological insula-
tors are similar to the integer quantum Hall effect. Due
to the presence of a single-particle energy gap, electron-
electron interactions do not modify the state in an essen-
tial way. Topological insulators can be understood within
the framework of the band theory of solids �Bloch,
1929�. It is remarkable that after more than 80 years,
there are still treasures to be uncovered within band
theory.
In this Colloquium, we review the theoretical and ex-
perimental foundations of this rapidly developing field.
We begin in Sec. II with an introduction to topological
band theory, in which we explain the topological order
in the quantum Hall effect and in topological insulators.
We also give a short introduction to topological super-
conductors, which can be understood within a similar
framework. A unifying feature of these states is the
bulk-boundary correspondence, which relates the topo-
logical structure of bulk crystal to the presence of gap-
less boundary modes. Section III describes the 2D topo-
logical insulator, also known as a quantum spin Hall
insulator, and discusses the discovery of this phase in
HgCdTe quantum wells. Section IV is devoted to three-
dimensional �3D� topological insulators. We review their
experimental discovery in Bi1−xSbx, as well as more re-
cent work on “second-generation” materials Bi2Se3 and
Bi2Te3. Section V focuses on exotic states that can occur
at the surface of a topological insulator due to an in-
duced energy gap. An energy gap induced by a magnetic
field or proximity to a magnetic material leads to a novel
quantum Hall state along with a topological magneto-
electric effect. An energy gap due to proximity with a
superconductor leads to a state that supports Majorana
fermions and may provide a new venue for realizing pro-
posals for topological quantum computation. In Sec. VI
we conclude with a discussion of new materials, new ex-
periments, and open problems.
Some aspects of this subject have been described in
other reviews, including the review of the quantum spin
Hall effect by König et al. �2008� and surveys by Moore
�2010� and Qi and Zhang �2010�.
II. TOPOLOGICAL BAND THEORY
A. The insulating state
The insulating state is the most basic state of matter.
The simplest insulator is an atomic insulator, with elec-
trons bound to atoms in closed shells. Such a material is
electrically inert because it takes a finite energy to dis-
lodge an electron. Stronger interaction between atoms
in a crystal leads to covalent bonding. One of the tri-
umphs of quantum mechanics in the 20th century was
the development of the band theory of solids, which pro-
vides a language for describing the electronic structure
of such states. This theory exploits the translational sym-
metry of the crystal to classify electronic states in terms
of their crystal momentum k, defined in a periodic Bril-
louin zone. The Bloch states �um�k��, defined in a single
unit cell of the crystal, are eigenstates of the Bloch
Hamiltonian H�k�. The eigenvalues Em�k� define energy
bands that collectively form the band structure. In an
insulator an energy gap separates the occupied valence-
band states from the empty conduction-band states.
Though the gap in an atomic insulator, such as solid ar-
gon, is much larger than that of a semiconductor, there is
a sense in which both belong to the same phase. One can
imagine tuning the Hamiltonian so as to interpolate con-
tinuously between the two without closing the energy
gap. Such a process defines a topological equivalence
between different insulating states. If one adopts a
slightly coarser “stable” topological classification
scheme, which equates states with different numbers of
trivial core bands, then all conventional insulators are
equivalent. Indeed, such insulators are equivalent to the
vacuum, which according to Dirac’s relativistic quantum
theory also has an energy gap �for pair production�, a
conduction band �electrons�, and a valence band �posi-
trons�.
Are all electronic states with an energy gap topologi-
cally equivalent to the vacuum? The answer is no, and
the counterexamples are fascinating states of matter.
3046 M. Z. Hasan and C. L. Kane: Colloquium: Topological insulators
Rev. Mod. Phys., Vol. 82, No. 4, October–December 2010
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B. The quantum Hall state
The simplest counterexample is the integer quantum
Hall state �von Klitzing, Dorda, and Pepper, 1980;
Prange and Girvin, 1987�, which occurs when electrons
confined to two dimensions are placed in a strong mag-
netic field. The quantization of the electrons’ circular
orbits with cyclotron frequency �c leads to quantized
Landau levels with energy �m=��c�m+1/2�. If N Lan-
dau levels are filled and the rest are empty, then an en-
ergy gap separates the occupied and empty states just as
in an insulator. Unlike an insulator, though, an electric
field causes the cyclotron orbits to drift, leading to a Hall
current characterized by the quantized Hall conductivity,
�xy = Ne
2/h . �1�
The quantization of �xy has been measured to 1 part in
109 �von Klitzing, 2005�. This precision is a manifestation
of the topological nature of �xy.
Landau levels can be viewed as a “band structure.”
Since the generators of translations do not commute
with one another in a magnetic field, electronic states
cannot be labeled with momentum. However, if a unit
cell with area 2��c /eB enclosing a flux quantum is de-
fined, then lattice translations do commute, so Bloch’s
theorem allows states to be labeled by 2D crystal mo-
mentum k. In the absence of a periodic potential, the
energy levels are simply the k independent Landau lev-
els Em�k�=�m. In the presence of a periodic potential
with the same lattice periodicity, the energy levels will
disperse with k. This leads to a band structure that looks
identical to that of an ordinary insulator.
1. The TKNN invariant
What is the difference between a quantum Hall state
characterized by Eq. �1� and an ordinary insulator? The
answer, explained by Thouless, Kohmoto, Nightingale,
and den Nijs �1982� �TKNN�, is a matter of topology. A
2D band structure consists of a mapping from the crystal
momentum k �defined on a torus� to the Bloch Hamil-
tonian H�k�. Gapped band structures can be classified
topologically by considering the equivalence classes of
H�k� that can be continuously deformed into one an-
other without closing the energy gap. These classes are
distinguished by a topological invariant n�Z �Z denotes
the integers� called the Chern invariant.
The Chern invariant is rooted in the mathematical
theory of fiber bundles �Nakahara, 1990�, but it can be
understood physically in terms of the Berry phase
�Berry, 1984� associated with the Bloch wave functions
�um�k��. Provided there are no accidental degeneracies
when k is transported around a closed loop, �um�k�� ac-
quires a well defined Berry phase given by the line inte-
gral of Am= i�um��k�um�. This may be expressed as a sur-
face integral of the Berry flux Fm=��Am. The Chern
invariant is the total Berry flux in the Brillouin zone,
nm =
1
2�
� d2k Fm. �2�
nm is integer quantized for reasons analogous to the
quantization of the Dirac magnetic monopole. The total
Chern number, summed over all occupied bands, n
=�m=1
N nm is invariant even if there are degeneracies be-
tween occupied bands, provided the gap separating oc-
cupied and empty bands remains finite. TKNN showed
that �xy, computed using the Kubo formula, has the
same form, so that N in Eq. �1� is identical to n. The
Chern number n is a topological invariant in the sense
that it cannot change when the Hamiltonian varies
smoothly. This helps to explain the robust quantization
of �xy.
The meaning of Eq. �2� can be clarified by a simple
analogy. Rather than maps from the Brillouin zone to a
Hilbert space, consider simpler maps from two to three
dimensions, which describe surfaces. 2D surfaces can be
topologically classified by their genus g, which counts
the number of holes. For instance, a sphere �Fig. 1�c�
has g=0, while a donut �Fig. 1�f� has g=1. A theorem in
mathematics due to Gauss and Bonnet �Nakahara, 1990�
states that the integral of the Gaussian curvature over a
closed surface is a quantized topological invariant, and
its value is related to g. The Chern number is an integral
of a related curvature.
2. Graphene, Dirac electrons, and Haldane model
A simple example of the quantum Hall effect in a
band theory is provided by a model of graphene in a
periodic magnetic field introduced by Haldane �1988�.
We briefly digress here to introduce graphene because it
will provide insight into the conception of the 2D quan-
tum spin Hall insulator and because the physics of Dirac
electrons present in graphene has important parallels at
the surface of a 3D topological insulator.
B
Insulating State
Quantum Hall State
E
k
0
E
k
EG
(a) (b) (c)
(d) (e) (f)
/a−π/a−π
0 /a−π/a−π
hωc
FIG. 1. �Color online� States of matter. �a�–�c� The insulating
state. �a� An atomic insulator. �b� A simple model insulating
band structure. �d�–�f� The quantum Hall state. �d� The cyclo-
tron motion of electrons. �e� The Landau levels, which may be
viewed as a band structure. �c� and �f� Two surfaces which
differ in their genus, g. �c� g=0 for the sphere and �f� g=1 for
the donut. The Chern number n that distinguishes the two
states is a topological invariant similar to the genus.
3047M. Z. Hasan and C. L. Kane: Colloquium: Topological insulators
Rev. Mod. Phys., Vol. 82, No. 4, October–December 2010
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Graphene is a 2D form of carbon that is of current
interest �Novoselov et al., 2005; Zhang et al., 2005; Geim
and Novoselov, 2007; Castro Neto et al., 2009�. What
makes graphene interesting electronically is the fact that
the conduction band and valence band touch each other
at two distinct points in the Brillouin zone. Near those
points the electronic dispersion resembles the linear dis-
persion of massless relativistic particles, described by the
Dirac equation �DiVincenzo and Mele, 1984; Semenoff,
1984�. The simplest description of graphene employs a
two band model for the pz orbitals on the two equivalent
atoms in the unit cell of graphene’s honeycomb lattice.
The Bloch Hamiltonian is then a 2�2 matrix,
H�k� = h�k� · �� , �3�
where �� = ��x ,�y ,�z� are Pauli matrices and h�k�
= „hx�k� ,hy�k� ,0…. The combination of inversion �P� and
time-reversal �T� symmetry requires hz�k�=0 because P
takes hz�k� to −hz�−k�, while T takes hz�k� to +hz�−k�.
The Dirac points occur because the two components
h�k� can have point zeros in two dimensions. In
graphene they occur at two points, K and K�=−K,
whose locations at the Brillouin-zone corners are fixed
by graphene’s rotational symmetry. For small q
k−K,
h�q�=�vFq, where vF is a velocity, so H�q�=�vFq ·�� has
the form of a 2D massless Dirac Hamiltonian.
The degeneracy at the Dirac point is protected by P
and T symmetry. By breaking these symmetries the de-
generacy can be lifted. For instance, P symmetry is vio-
lated if the two atoms in the unit cell are inequivalent.
This allows hz�k� to be nonzero. If hz�k� is small, then
near K �Eq. �3� becomes a massive Dirac Hamiltonian,
H�q� = �vFq · �� + m�z, �4�
where m=hz�K�. The dispersion E�q�= ±���vFq�2+m2
has an energy gap 2�m�. Note that T symmetry requires
the Dirac point at K� to have a mass m�=hz�K�� with the
same magnitude and sign, m�=m. This state describes an
ordinary insulator.
Haldane �1988� imagined lifting the degeneracy by
breaking T symmetry with a magnetic field that is zero
on the average but has the full symmetry on the lattice.
This perturbation allows nonzero hz�k� and introduces a
mass to the Dirac points. However, P symmetry requires
the masses at K and K� to have opposite signs, m�=−m.
Haldane showed that this gapped state is not an insula-
tor but rather a quantum Hall state with �xy=e2 /h.
This nonzero Hall conductivity can be understood in
terms of Eq. �2�. For a two level Hamiltonian of the
form of Eq. �3� it is well known that the Berry flux
�Berry, 1984� is related to the solid angle subtended by
the unit vector hˆ�k�=h�k� / �h�k��, so that Eq. �2� takes
the form
n =
1
4�
� d2k��kxhˆ� �kyhˆ� · hˆ . �5�
This simply counts the number of times hˆ�k� wraps
around the unit sphere as a function of k. When the
masses m=m�=0, hˆ�k� is confined to the equator hz=0,
with a unit �and opposite� winding around each of the
Dirac points where �h�=0. For small but finite m, �h�
�0 everywhere, and hˆ�K� visits the north or south pole,
depending on the sign of m. It follows that each Dirac
point contributes ±e2 /2h to �xy. In the insulating state
with m=m� the two cancel, so �xy=0. In the quantum
Hall state they add.
It is essential that there were an even number of Dirac
points since otherwise the Hall conductivity would be
quantized to a half integer. This is in fact guaranteed by
the fermion doubling theorem �Nielssen and Ninomiya,
1983�, which states that for a T invariant system Dirac
points must come in pairs. We return to this issue in Sec.
IV, where the surface of a topological insulator provides
a loophole for this theorem.
3. Edge states and the bulk-boundary correspondence
A fundamental consequence of the topological classi-
fication of gapped band structures is the existence of
gapless conducting states at interfaces where the topo-
logical invariant changes. Such edge states are well
known at the interface between the integer quantum
Hall state and vacuum �Halperin, 1982�. They may be
understood in terms of the skipping motion electrons
execute as their cyclotron orbits bounce off the edge
�Fig. 2�a� . Importantly, the electronic states responsible
for this motion are chiral in the sense that they propa-
gate in one direction only al
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