L455
HiPerDynFREDTM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Pulse test: � Pulse Width = 5 ms, Duty Cycle < 2.0 %
� Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXY...
HiPerDynFREDTM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Pulse test: � Pulse Width = 5 ms, Duty Cycle < 2.0 %
� Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Features
� Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
� Low cathode to tab capacitance (<25pF)
� International standard package
� Planar passivated chips
� Very short recovery time
� Extremely low switching losses
� Low IRM-values
� Soft recovery behaviour
� Epoxy meets UL 94V-0
� Isolated and UL registered E153432
Applications
� Antiparallel diode for high frequency
switching devices
� Antisaturation diode
� Snubber diode
� Free wheeling diode in converters
and motor control circuits
� Rectifiers in switch mode power
supplies (SMPS)
� Inductive heating
� Uninterruptible power supplies (UPS)
� Ultrasonic cleaners and welders
Advantages
� Avalanche voltage rated for reliable
operation
� Soft reverse recovery for low EMI/RFI
� Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
A = Anode, C = Cathode
* Patent pending
ISOPLUS 247TM
A
C
Isolated back surface *
CA
© 2000 IXYS All rights reserved 1 - 1
DSEP 15-12CR
IFAV = 15 A
VRRM = 1200 V
trr = 20 ns
VRSM VRRM Type
V V
1200 1200 DSEP 15-12CR
01
8
Symbol Conditions Maximum Ratings
IFRMS 50 A
IFAVM TC = 130°C; rectangular, d = 0.5 15 A
IFRM tP < 10 µs; rep. rating, pulse width limited by TVJM tbd A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A
EAS TVJ = 25°C; non-repetitive 0.1 mJ
IAS = 1.0 A; L = 180 µH
IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.1 A
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 150 W
VISOL 50/60 Hz RMS; IISOL � 1 mA 2500 V~
FC mounting force with clip 20...120 N
Weight typical 6 g
Symbol Conditions Characteristic Values
typ. max.
IR � TVJ = 25°C VR = VRRM 100 µA
TVJ = 150°C VR = VRRM 0.5 mA
VF � IF = 15 A; TVJ = 150°C 2.67 V
TVJ = 25°C 4.04 V
RthJC 1 K/W
RthCH with heatsink compound 0.25 K/W
trr IF = 1 A; -di/dt = 200 A/µs; 20 ns
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs 4.0 4.9 A
TVJ = 100°C
Preliminary Data
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