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PMOS-NDS9430 May 2002 2002 Fairchild Semiconductor Corporation NDS9430 Rev B NDS9430 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It ha...

PMOS-NDS9430
May 2002 2002 Fairchild Semiconductor Corporation NDS9430 Rev B NDS9430 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Applications • Power management • Load switch • Battery protection Features • –5.3 A, –30 V RDS(ON) = 60 mΩ @ VGS = –10 V RDS(ON) =100 mΩ @ VGS = –4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D SSSO-8 D D D G D D D D S S S G Pin 1 SO-8 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) –5.3 A – Pulsed –20 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9430 NDS9430 13’’ 12mm 2500 units N D S9430 NDS9430 Rev B Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –23 mV/°C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 4.5 mV/°C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –5.3 A VGS = –4.5 V, ID = –2 A VGS= –10 V, ID = –5.3 A,TJ=125°C 42 65 57 60 100 73 mΩ ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A gFS Forward Transconductance VDS = –5 V, ID = –5.3 A 10 S Dynamic Characteristics Ciss Input Capacitance 528 pF Coss Output Capacitance 132 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 70 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 7 14 ns tr Turn–On Rise Time 13 24 ns td(off) Turn–Off Delay Time 14 25 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 9 17 ns Qg Total Gate Charge 10 14 nC Qgs Gate–Source Charge 2.2 nC Qgd Gate–Drain Charge VDS = –15 V, ID = –4 A, VGS = –10 V 2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.8 –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% N D S9430 NDS9430 Rev B Typical Characteristics 0 10 20 30 0 1 2 3 4 5 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) -I D , D R A IN C U R R EN T (A ) VGS = -10V -3.0V -3.5V -4.0V -4.5V -5.0V -6.0V 0.8 1 1.2 1.4 1.6 1.8 2 0 6 12 18 24 30 -ID, DRAIN CURRENT (A) R D S( O N ), N O R M A LI ZE D D R A IN -S O U R C E O N -R ES IS TA N C E VGS=-4.0V -4.0V -6.0V -7.0V -8.0V -10V -5.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) R D S( O N ), N O R M A LI ZE D D R A IN -S O U R C E O N -R ES IS TA N C E ID = -5.3A VGS = -10V 0 0.05 0.1 0.15 0.2 0.25 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) R D S( O N ), O N -R ES IS TA N C E (O H M ) ID = -2.8A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 3 6 9 12 15 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) -I D , D R A IN C U R R EN T (A ) TA = -55 oC 25oC 125oC VDS = -5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) -I S , R EV ER SE D R A IN C U R R EN T (A ) VGS =0V TA = 125 oC 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. N D S9430 NDS9430 Rev B Typical Characteristics 0 2 4 6 8 10 0 2 4 6 8 10 Qg, GATE CHARGE (nC) -V G S , G A TE -S O U R C E VO LT A G E (V ) ID = -5.3A VDS = -5V -10V -15V 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) C A PA C IT A N C E (p F) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) -I D , D R A IN C U R R EN T (A ) DC 1s 100ms 100µs RDS(ON) LIMIT VGS = -10V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 10ms 1ms 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) P( pk ), PE A K T R A N SI EN T PO W ER (W ) SINGLE PULSE RθJA = 125°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) r( t), N O R M A LI ZE D E FF EC TI VE TR A N SI EN T TH ER M A L R ES IS TA N C E RθJA(t) = r(t) + RθJA RθJA = 125 oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 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