May 2002
2002 Fairchild Semiconductor Corporation NDS9430 Rev B
NDS9430
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –5.3 A, –30 V RDS(ON) = 60 mΩ @ VGS = –10 V
RDS(ON) =100 mΩ @ VGS = –4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
SSSO-8
D
D
D
G
D
D
D D
S
S S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) –5.3 A
– Pulsed –20
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
PD
(Note 1c) 1
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
NDS9430 NDS9430 13’’ 12mm 2500 units
N
D
S9430
NDS9430 Rev B
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C –23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
4.5 mV/°C
RDS(on) Static Drain–Source
On–Resistance
VGS = –10 V, ID = –5.3 A
VGS = –4.5 V, ID = –2 A
VGS= –10 V, ID = –5.3 A,TJ=125°C
42
65
57
60
100
73
mΩ
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
gFS Forward Transconductance VDS = –5 V, ID = –5.3 A 10 S
Dynamic Characteristics
Ciss Input Capacitance 528 pF
Coss Output Capacitance 132 pF
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
70 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 7 14 ns
tr Turn–On Rise Time 13 24 ns
td(off) Turn–Off Delay Time 14 25 ns
tf Turn–Off Fall Time
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
9 17 ns
Qg Total Gate Charge 10 14 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge
VDS = –15 V, ID = –4 A,
VGS = –10 V
2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.8 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
N
D
S9430
NDS9430 Rev B
Typical Characteristics
0
10
20
30
0 1 2 3 4 5 6
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-I D
, D
R
A
IN
C
U
R
R
EN
T
(A
)
VGS = -10V
-3.0V
-3.5V
-4.0V
-4.5V
-5.0V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0 6 12 18 24 30
-ID, DRAIN CURRENT (A)
R
D
S(
O
N
),
N
O
R
M
A
LI
ZE
D
D
R
A
IN
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E
VGS=-4.0V
-4.0V
-6.0V
-7.0V
-8.0V
-10V
-5.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
R
D
S(
O
N
),
N
O
R
M
A
LI
ZE
D
D
R
A
IN
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E
ID = -5.3A
VGS = -10V
0
0.05
0.1
0.15
0.2
0.25
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
R
D
S(
O
N
),
O
N
-R
ES
IS
TA
N
C
E
(O
H
M
) ID = -2.8A
TA = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-I D
, D
R
A
IN
C
U
R
R
EN
T
(A
)
TA = -55
oC
25oC
125oC
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I S
, R
EV
ER
SE
D
R
A
IN
C
U
R
R
EN
T
(A
) VGS =0V
TA = 125
oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
N
D
S9430
NDS9430 Rev B
Typical Characteristics
0
2
4
6
8
10
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
-V
G
S
, G
A
TE
-S
O
U
R
C
E
VO
LT
A
G
E
(V
) ID = -5.3A VDS = -5V -10V
-15V
0
100
200
300
400
500
600
700
800
0 5 10 15 20 25 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
C
A
PA
C
IT
A
N
C
E
(p
F) CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I D
, D
R
A
IN
C
U
R
R
EN
T
(A
)
DC
1s
100ms
100µs
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 125
oC/W
TA = 25
oC
10ms
1ms
10s
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(
pk
),
PE
A
K
T
R
A
N
SI
EN
T
PO
W
ER
(W
)
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(
t),
N
O
R
M
A
LI
ZE
D
E
FF
EC
TI
VE
TR
A
N
SI
EN
T
TH
ER
M
A
L
R
ES
IS
TA
N
C
E
RθJA(t) = r(t) + RθJA
RθJA = 125
oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
N
D
S9430
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