7mbr25sa120

7MBR25SA120 IGBT Modules Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive)Co nv er te r B ra ke In ve rte r Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque VCES VGES IC ICP -IC PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C 1 device Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C 1 device 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute 1200 ±20 35 25 70 50 25 180 1200 ±20 25 15 50 30 110 1200 1600 25 260 338 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 V V A A A W V V A A W V V A A A2s °C °C V N·m *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. IGBT MODULE (S series) 1200V / 25A / PIM Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B valueT he rm is to r C on ve rte r Br ak e In ve rte r ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=25mA VGE=15V, Ic=25A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=25A VGE=±15V RG=51W IF=25A chip terminal IF=25A VCES=1200V, VGE=0V VCE=0V, VGE=±20V IC=15A, VGE=15V chip terminal VCC=600V IC=15A VGE=±15V RG=82W VR=1200V IF=25A chip terminal VR=1600V T=25°C T=100°C T=25/50°C 1.0 0.2 8.5 2.6 1.2 0.6 1.0 0.3 3.2 0.35 1.0 0.2 2.6 1.2 0.6 1.0 0.3 1.0 1.5 1.0 3000 5.5 7.2 mA µA V V pF µs V µs mA µA V µs mA V mA W K Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound 0.69 1.30 1.14 °C/W 0.90 0.05 Thermal resistance ( 1 device ) Rth(j-c) Contact thermal resistance * Rth(c-f) Thermal resistance Characteristics IGBT Modules 7MBR25SA120 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic 2.1 2.2 0.35 0.25 0.1 0.45 0.08 2.3 2.4 2.1 2.2 0.35 0.25 0.45 0.08 1.1 1.2 5000 465 495 520 3305 3375 3450 [Converter] 21(P) 23(N) 1(R) 2(S) 3(T) [B ra ke ] [In ver ter ] 2 2 (P 1) 7 (B ) 1 4 (G b) 2 4 (N 1) 2 0 (G u) 1 9 (E u ) 1 3 (G x) 1 8 (G v) 1 7 (E v ) 4 (U ) 1 2 (G y) 5 (V ) 6 (W ) 1 6 (G w ) 1 1 (G z) 1 0 (E n) 1 5 (E w ) 8 9 [T h e rm is to r] IGBT Modules 7MBR25SA120 Characteristics (Representative) 0 1 2 3 4 5 0 10 20 30 40 50 60 8V 10V 12V 15V VGE= 20V [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25 oC (typ.) Co lle ct or c ur re nt : I c [ A ] Collector - Emitter voltage : VCE [ V ] 0 1 2 3 4 5 0 10 20 30 40 50 60 8V 10V 12V 15V VGE= 20V [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125 oC (typ.) Collector - Emitter voltage : VCE [ V ] Co lle ct or c ur re nt : I c [ A ] 0 1 2 3 4 5 0 10 20 30 40 50 60 Tj= 25oC Tj= 125 oC [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector - Emitter voltage : VCE [ V ] Co lle ct or c ur re nt : I c [ A ] 5 10 15 20 25 0 2 4 6 8 10 Ic= 12.5A Ic= 25A Ic= 50A [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 oC (typ.) Co lle ct or - Em itt er v ol ta ge : V CE [ V ] Gate - Emitter voltage : VGE [ V ] 0 5 10 15 20 25 30 35 100 1000 10000 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 oC Ca pa cit an ce : C ie s, C oe s, C re s [ p F ] Collector - Emitter voltage : VCE [ V ] Coes Cres Cies 0 50 100 150 200 250 0 200 400 600 800 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25 oC Gate charge : Qg [ nC ] Co lle ct or - Em itt er v ol ta ge : V CE [ V ] 0 5 10 15 20 25 G at e - E m itt er v ol ta ge : V G E [ V ] IGBT Modules 7MBR25SA120 Vcc=600V, VGE=±15V, Rg=51W , Tj=25°C Vcc=600V, VGE=±15V, Rg=51W , Tj=125°C Vcc=600V, Ic=25A, VGE=±15V, Tj=25°C Vcc=600V, VGE=±15V, Rg=51W Vcc=600V, Ic=25A, VGE=±15V, Tj=125°C +VGE=15V, -VGE<15V, Rg>51 W , Tj<125°C = = = 0 10 20 30 40 50 100 500 1000 ton tr toff tf [ Inverter ] Switching time vs. Collector current (typ.) Sw itc hi ng ti m e : to n, tr , t of f, tf [ n se c ] Collector current : Ic [ A ] 0 10 20 30 40 50 100 500 1000 tf tr ton toff [ Inverter ] Switching time vs. Collector current (typ.) Collector current : Ic [ A ] Sw itc hi ng ti m e : to n, tr , t of f, tf [ n se c ] 10 50 100 500 50 100 500 1000 5000 toff ton tr tf [ Inverter ] Switching time vs. Gate resistance (typ.) Gate resistance : Rg [ W ] Sw itc hi ng ti m e : to n, tr , t of f, tf [ n se c ] 0 10 20 30 40 50 0 1 2 3 4 5 6 7 Err(25 oC) Eoff(25 oC) Eon(25 oC) Err(125 oC) Eoff(125 oC) Eon(125 oC) [ Inverter ] Switching loss vs. Collector current (typ.) Sw itc hi ng lo ss : E on , E of f, Er r [ m J/p uls e ] Collector current : Ic [ A ] 10 50 100 500 0 5 10 15 20 [ Inverter ] Switching loss vs. Gate resistance (typ.) Sw itc hi ng lo ss : E on , E of f, Er r [ m J/p uls e ] Gate resistance : Rg [ W ] Eon Err Eoff 0 200 400 600 800 1000 1200 1400 0 10 20 30 40 50 60 [ Inverter ] Reverse bias safe operating area Collector - Emitter voltage : VCE [ V ] Co lle ct or c ur re nt : Ic [ A ] IGBT Modules 7MBR25SA120 0 1 2 3 4 0 10 20 30 40 50 60 Tj=25 oCTj=125 oC [ Inverter ] Forward current vs. Forward on voltage (typ.) Fo rw ar d cu rre nt : I F [ A ] Forward on voltage : VF [ V ] 0 10 20 30 40 10 100 300 Irr(125 oC) Irr(25 oC) trr(25 oC) trr(125 oC) [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=51 W Forward current : IF [ A ] R ev er se re co ve ry c ur re nt : I rr [ A ] R ev er se re co ve ry ti m e : tr r [ n se c ] 0.0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 60 Tj= 25 oC Tj= 125 oC [ Converter ] Forward current vs. Forward on voltage (typ.) Forward on voltage : VFM [ V ] Fo rw ar d cu rre nt : I F [ A ] 0.001 0.01 0.1 1 0.01 0.1 1 5 IGBT[Brake] Transient thermal resistance Th er m al re si st an se : R th (j-c ) [ o C /W ] Pulse width : Pw [ sec ] FWD[Inverter] Conv. Diode IGBT[Inverter] -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.1 1 10 100 200 [ Thermistor ] Temperature characteristic (typ.) Temperature [ oC ] R es is ta nc e : R [ k W ] IGBT Modules 7MBR25SA120 0 1 2 3 4 5 0 5 10 15 20 25 30 35 8V 10V 12V 15V VGE= 20V [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25 oC (typ.) Co lle ct or c ur re nt : I c [ A ] Collector - Emitter voltage : VCE [ V ] 0 1 2 3 4 5 0 5 10 15 20 25 30 35 8V 10V 12V15VVGE= 20V [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125 oC (typ.) Collector - Emitter voltage : VCE [ V ] Co lle ct or c ur re nt : I c [ A ] 0 1 2 3 4 5 0 5 10 15 20 25 30 35 Tj= 25 oC Tj= 125 oC [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector - Emitter voltage : VCE [ V ] Co lle ct or c ur re nt : I c [ A ] 5 10 15 20 25 0 2 4 6 8 10 Ic= 7.5A Ic= 15A Ic= 30A [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 oC (typ.) Co lle ct or - Em itt er v ol ta ge : V CE [ V ] Gate - Emitter voltage : VGE [ V ] 0 5 10 15 20 25 30 35 50 100 1000 5000 [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 oC Ca pa cit an ce : C ie s, C oe s, C re s [ p F ] Collector - Emitter voltage : VCE [ V ] Coes Cres Cies 0 50 100 150 0 200 400 600 800 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25 oC Gate charge : Qg [ nC ] Co lle ct or - Em itt er v ol ta ge : V CE [ V ] 0 5 10 15 20 25 G at e - E m itt er v ol ta ge : V G E [ V ] IGBT Modules 7MBR25SA120 Outline Drawings, mm