PC929

PC929 Features Application Outline Dimensions (Unit : mm) PC929 *4 Pulse width <=0.15 µs, Duty ratio=0.01 *5 40 to 60% RH, AC for 1 minute, Ta=25˚C 6. 5 1 2 3 4 5 6 7 891011121314 9.22 14 - 0.6 12 - 1.27 7.62 1.0 1.0 10.00 .3 5 3. 5 0. 26 Amp. Co ns tan t vo lta ge ci rcu it IGBT protector circuit Interface 891011121314 1 2 3 4 5 6 7 Internal connection diagram 4 NC 5 NC 6 NC 7 NC 8 FS 9 C 10 GND 11 O2 12 O1 13 VCC 14 GND Terminals 4 to 7 : Shortcircuit in element PC929 1 Cathode 3 Anode 2 Cathode Primary side mark 1. IGBT control for inverter drive (Ta=Topr unless otherwise specified)Absolute Maximum Ratings Operation truth table is shown on the next page. * "OPIC" (Optical IC) is a trademark of the SHARP Corporation. An OPIC consists of a light-detecting element and signal processing circuit integrated onto a single chip. *1, 2, 3 Decrease in the ambient temperature range of the Absolute Max. Rating : Shown in Figs 1 and 2. Parameter Symbol Rating Unit Input Forward current*1 IF 20 mA Reverse voltage VR 6 (Ta = 25˚C) V Output Supply voltage VCC 35 V IO1 0.1 A *4 IO1P 0.4 A IO2 0.1 A *4 IO2P 0.4 A VO1 35 V Power dissipation*2 PO 500 mW Overcurrent detecting voltage VC VCC V Overcurrent detecting current IC 30 mA Error signal output voltage VFS VCC V Error signal output current IFS 20 mA Total power dissipation*3 Ptot 550 mW Isolation voltage*5 Viso 4 000 Vrms Operating temperature Topr - 25 to + 80 ˚C Storage temperature Tstg - 55 to + 125 ˚C Soldering temperature Tsol 260 (for 10 sec) ˚C Shortcircuit Protector Circuit Built-in Photocoupler Suitable for Inverter-Driving MOS-FET/IGBT 1. Built-in IGBT shortcircuit protector circuit 2. Built-in direct drive circuit for IGBT drive (Peak output current ... IO1P, IO2P : MAX. 0.4A) 3. High speed response (tPLH, tPHL : MAX. 0.5 µ s) 4. High isolation voltage (Viso : 4000Vrms) 5. Half lead pin pitch (p=1.27 mm) package type O1 output current O1 peak output current O1 output voltage O2 output current O2 peak output current n n n n data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, 6. Recognized by UL, file NO. E64380 h TÜV ( VDE 0884 ) approved type is also available as an option. (Ta=Topr unless otherwise specified)Electro-optical Characteristics (1) Truth Table Input ON Low level High level High level High level Low level Low level For protective operation OFF Low level Low level High level High level Low level High level O2 Output FS OutputC Input/Output *7 I represents forward current when output goes from "Low" to "High".FLH *6 When measuring output and transfer characteristics, connect a bypass capacitor (0.01 µ F or more) between V 13 and GND 14 near the device.CC PC929 *8 FS=OPEN, V =0VC Parameter Symbol Conditions MIN. TYP. MAX. Unit Measuringcircuit In pu t Forward voltage VF1 Ta = 25˚C, IF = 10mA - 1.6 1.75 V - VF2 Ta = 25˚C, IF = 0.2mA 1.2 1.5 - V - Reverse current IR Ta = 25˚C, VR = 5V - - 10 µ A - Terminal capacitance Ct Ta = 25˚C, V = 0, f = 1kHz - 30 250 pF - O ut pu t Operating supply voltage VCC Ta = - 10 to 60 ˚C 15 - 30 V - - 15 - 24 V VO1L *8 VCC1 = 12V, VCC2 = - 12V IO1 = 0.1A, IF = 5mA - 0.2 0.4 V (1) VO2H *8 VCC = VO1 = 24V, IO2 = - 0.1A IF = 5mA 20 22 - V (2) VO2L *8VCC = VO1 = 24V, IO2 = 0.1A, IF = 0mA - 1.2 2.0 V (3) VO1L Ta = 25˚C, VCC = VO1 = 35V, IF = 0mA *8 - - 500 µ A (4) High level supply current ICCH *8Ta = 25˚C, VCC = VO1 = 24V, IF = 5mA - 10 17 mA (6)*8VCC = VO1 = 24V, IF = 5mA - - 19 mA Low level supply current ICCL Ta = 25˚C, VCC = VO1 = 24V, IF = 0mA *8 - 11 18 mA VCC = VO1 = 24V, IF = 0mA *8 - - 20 mA Tr an sf er c ha ra ct er ist ic s *7 "Low→High" threshold input current IFLH Ta = 25˚C, VCC = VO1 = 24V *8 0.3 1.5 3.0 mA (5) VCC = VO1 = 24V *8 0.2 - 5.0 mA Isolation resistance RISO Ta = 25˚C, DC500V, 40 to60% RH 5 x 1010 1 x 1011 - -Ω Re sp on se ti m e tPLH Ta = 25˚C, VCC = VO1 = 24V *8 RG = 47Ω , CG = 3 000pF, IF = 5mA - 0.3 0.5 µ s (8)tPHL - 0.3 0.5 µ s Rise time tr - 0.2 0.5 µ s Fall time tf - 0.2 0.5 µ s Instantaneous common mode rejection voltage "Output : High level" CMH *8 Ta = 25˚C, VCC = VO1 = 24V, IF = 5mA VCM = 600V(peak ), ∆ VO2H = 2.0V - 1 500 - - V/ µ s (7)Instantaneous common mode rejection voltage "Output : Low level" CML Ta = 25˚C, VCC = VO1 = 24V, IF = 0mA VCM = 600V(peak ), ∆ VO2L = 2.0V *8 1 500 - - V/ µ s "Low→High" propagation delay time "High→Low" propagation delay time O1 low level output voltage O2 high level output voltage O2 low level output voltage O leak current n n (Ta=Topr unless otherwise specified)Electro-optical Characteristics (2) *10 V represents C-terminal voltage when O output goes from "High" to "Low".CTH 2 *9 When measuring overcurrent, protective output and error signal output characteristics, connect a bypass capacitor (0.01 µ F or more) between V 13 and GND 14 near the device.CC PC929 MIN. TYP. MAX. Test circuit *9 Overcurrent detecting voltage*10 VCTH VCC = V01 = 24V, RG = 47Ω Ta = 25˚C, IF = 5mA 6.5 VCC - 6.0 VCC - 5.5 VCC - V (9)Overcurrent detecting voltage hysteresis width VCHIS 1 2 3 V *9 tPCOHL Ta = 25˚C FS = OPEN VCC = V01 = 24V, IF = 5mA - 4 10 µ s (13) tPCOtf 2 5 - µ s - - 2 V (10)VOE *9 Low level error signal voltage VFSL C = OPEN Ta = 25˚C, IF = 5mA, IFS = 10mA - 0.2 0.4 V (11) High level error signal current IFSH VC = 0V Ta = 25˚C, IF = 5mA, VFS = 24V - - 100 µ A (12) Error signal "High→Low" delay time tPCFHL Ta = 25˚C, RFS = 1.8kΩ VCC = VO1 = 24V, IF = 5mA - 1 5 µ s (14) Error signal output pulse width ∆ tFS 20 35 - µ s CG = 3 000pF, FS = OPEN CG = 3 000pF, RG = 47Ω CP = 1 000pF, RC = 1kΩ VCC = VO1 = 24V, RG = 47Ω , CG = 3 000pF, VCC = VO1 = 24V, RG = 47Ω , CG = 3 000pF, CG = 3 000pF, RG = 47Ω CP = 1 000pF, RC = 1kΩ Fig. 1 Forward Current vs. Ambient Temperature 60 50 40 30 20 10 0 0 25 50 75 80 100 125- 25 0 0 25 50 75 80 100 125- 25 600 500 400 300 200 100 550 Fo rw ar d cu rre nt I F (m A) Ambient temperature Ta (˚C) Fig. 2 Power Dissipation vs. Ambient Temperature Ambient temperature Ta (˚C) Po w er d iss ip at io n Pt ot , P o (m W ) Parameter Symbol Conditions Unit O2 "High→Low" delay time at protection from overcurrent O2 fall time at protection from overcurrent O2 output voltage at protection from overcurrentPr ot ec tiv e ou tp ut Ov erc urr en t de tec tio n Er ro r s ig na l o ut pu t n Test Circuit Diagram VCMwaveform CMH, VO2 waveform CML, VO2 waveform VCM (Peak) GND VO2H VO2L GND VINwaveform VOUT waveform∆ VO2L ∆ VO2H 50% 90% 50% 10% tr tf 1 2 3 8 9 10 11 12 13 14 ↑ IF V ↑VO1L IO1 VCC1 VCC2 2 8 9 10 11 12 13 14 ↑ IF V ↑VO2L VCC IO2 2 8 9 10 11 12 13 14 ↑ V VCC IF variable 2 8 9 10 11 12 13 14 V VCC VO2 SW BA VCM + - 2 8 9 10 11 12 13 14 ↑ V VCC IF V RG VCTH VOUT CG 2 8 9 10 11 12 13 14 ↑ IF V ↑ VCC VO2H VO2 2 8 9 10 11 12 13 14 ↑ VCC IF A ICC 2 8 9 10 11 12 13 14 ↑ VCC IF IO1LA 2 8 9 10 11 12 13 14 ↑ V VCC IF RG CGVOE CF VC RL 2 8 9 10 11 12 13 14 RG CG VCC VIN (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) SW at B, IF= 0mA VOUT tr = tf = 0.01 µ s Pulse width : 5 µ s Duty ratio=50% tpLH tpHL PC929 PC929 PC929 PC929 PC929 PC929 PC929 PC929 PC929 PC929 PC929 3 1 3 1 3 1 SW at A, IF = 5mA 3 1 3 1 3 1 3 1 IO2 3 1 3 1 n Test Circuit Diagram 2 8 9 10 11 12 13 14 ↑ IF V ↓VFSL IFS RG CG VCC (11) IF (Input current) 90% 50% 10% tpCOHL V O E tpCOTF 90% Error detecting threshold voltage (VCTH) 10% ∆ t FS 50% 50% 2 8 9 10 11 12 13 14 ↑ IF RG CG VCC (12) A IFSH VFS (13) 2 8 9 10 11 12 13 14 V RG CG VCC VOUT VIN 2 8 9 10 11 12 13 14 V RG CG VCC VIN RC RFS (14) tr = tf = 0.01µs Pulse width : 25 µ s Duty ratio=25% CP RC tr = tf = 0.01µ s Pulse width : 25 µ s Duty ratio=25% VO2 C (Detecting terminal) FS (Error signal output) tpCFHL PC929 PC929 PC929 PC929 PC929 3 1 3 1 3 1 3 1 (O2 output voltage) n Operations of Shortcircuit Protector Circuit Anode TTL, microcomputer, etc. Photodiode Amp. Constant voltage circuit Interface IGBT protector circuit GND VCC O1 O2 C FS GND Cathode VCC RG RC CP VEE IGBT 8 9 10 11 12 13 14 Light emitting diode PC929 1. Detection of increase in VCE (sat) of IGBT due to overcurrent by means of C-terminal 9 terminal) 2. Reduction of the IGBT gate voltage, and suppression of the collector current. 3. Simultaneous output of signals to indicate the shortcircuit condition (FS signal) from FS terminal to the microcomputer 4. Judgement and processing by the microcomputer PC929 3 1 Feedback to primary side Precautions for Operation 1. It is recommended that a capacitor of about 1000pF is added between C-terminal and GND in order to prevent malfunction of C-terminal due to noise. In the case of capacitor added, rise of the detecting voltage is delayed. Thus, use together a resistance of about 1kΩ set between Vcc and C-terminal. The C-terminal rise time varies with the time constant of CR added. Check sufficiently before use. 2. The light-detecting element used for this product is provided with a parasitic diode between each terminal and GND. When a terminal happens to reach electric potential lower than GND potential even in a moment, malfunction or rupture may result. Design the circuit so that each terminal will be kept at electric potential lower than the GND potential at all times. In the case of instantaneous shortcircuit, run continues. At fault, input to the photocoupler is cut off, and IGBT is turned OFF. n