SGM321

SGM321 SGM358 SGM324 PRODUCT DESCRIPTION The SGM321(single), SGM358(dual) and SGM324(quad) are rail-to-rail input and output voltage feedback amplifiers offering low cost. They have a wide input common-mode voltage range and output voltage swing, and take the minimum operating supply voltage down to 2.1V and the maximum recommended supply voltage is 5.5 V. All are specified over the extended – 40°C to +85°C temperature range. The SGM321/358/324 provide 1MHz bandwidth at a low current consumption of 60µA per amplifier. Very low input bias currents of 10pA, enable SGM321/358/ 324 to be used for integrators, photodiode amplifiers, and piezoelectric sensors. Rail-to-rail inputs and outputs are useful to designers buffering ASIC in single-supply systems. Applications for the series amplifiers include safety monitor- ing, portable equipment, battery and power supply control, and signal conditioning and interfacing for transducers in very low power systems. The SGM321 is available in SOT23-5 and SC70-5 packages. The SGM358 comes in SO-8 and MSOP-8 packages. The SGM324 is offered in TSSOP-16 and SO-16 packages. APPLICATIONS ASIC Input or Output Amplifier Sensor Interface Piezo Electric Transducer Amplifier Medical Instrumentation Mobile Communication Audio Output Portable Systems Smoke Detectors Notebook PC PCMCIA cards Battery –Powered equipment DSP interface 1MHz, 60µA, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES • Low Cost • Rail-to-Rail Input and Output 0.8mV Typical VOS • Unity Gain Stable • Gain Bandwidth Product: 1MHz • Very Low Input Bias Currents: 10pA • Operates on 2.1 V to 5.5 V Supplies • Input Voltage Range = - 0.1 V to +5.6 V with VS = 5.5 V • Low Supply Current: 60µA/Amplifier • Small Packaging SGM321 Available in SOT23-5 and SC70-5 SGM358 Available in SO-8 and MSOP-8 SGM324 Available in SO-16 and TSSOP-16 PIN CONFIGURATIONS (Top View) +VS -IN 1 2 3 4 5 -VS +IN SGM321 SOT23-5 / SC70-5 OUT OUT A OUT B +INB +VS1 2 3 4 5 6 7 8 -INA +INA -VS -INB SGM358 SO-8 / MSOP-8 1 2 3 4 5 OUT A -IN A +IN A -VS+VS -IND +IND 6 7 8 9 10 11 12 13 14 15 16 -INB +INB -INC NC NC OUT B OUT C +INC OUT D NC = NO CONNECT TSSOP-16 / SO-16 SGM324 Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com REV. A SGM321/358/324 ２ ELECTRICAL CHARACTERISTICS : VS = +5V (At RL = 100kΩ connected to Vs/2,and VOUT = Vs/2, unless otherwise noted) SGM321/358/324 TYP MIN/MAX OVER TEMPERATURE PARAMETER CONDITION +25℃ +25℃ -40℃ to 85℃ UNITS MIN / MAX INPUT CHARACTERISTICS Input Offset Voltage (VOS) Input Bias Current (IB) Input Offset Current (IOS) Common-Mode Voltage Range (VCM) Common-Mode Rejection Ratio(CMRR) Open-Loop Voltage Gain( AOL) Input Offset Voltage Drift (∆VOS/∆T) VS = 5.5V VS = 5.5V, VCM = - 0.1V to 4 V VS = 5.5V, VCM = - 0.1V to 5.6 V RL = 5KΩ ,Vo = 0.1V to 4.9V RL =100KΩ ,Vo = 0.035V to 4.965V ±0.8 10 10 - 0.1 to + 5.6 70 68 80 84 2.7 ±5 62 56 70 80 ±5.6 62 55 70 80 mV pA pA V dB dB dB dB µV/℃ MAX TYP TYP TYP MIN MIN MIN MIN TYP OUTPUT CHARACTERISTICS Output Voltage Swing from Rail Output Current (IOUT) RL = 100KΩ 0.008 23 20 18.8 V mA TYP MIN POWER SUPPLY Operating Voltage Range Power Supply Rejection Ratio (PSRR) Quiescent Current / Amplifier (IQ) Vs = +2.5 V to + 5.5 V VCM = (-VS) + 0.5 IOUT = 0 82 60 2.1 5.5 60 80 2.5 5.5 58 86 V V dB µA MIN MAX MIN MAX DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) Slew Rate (SR) Settling Time to 0.1%( tS) Overload Recovery Time CL = 100pF G = +1 , 2V Output Step G = +1, 2 V Output Step VIN ·Gain = Vs 1 0.52 5.3 2.6 MHz V/µs µs µs TYP TYP TYP TYP NOISE PERFORMANCE Voltage Noise Density (en) f = 1kHz f = 10kHz 27 20 nV/ Hz nV/ Hz TYP TYP Specifications subject to change without notice. SGM321/358/324 ３ PACKAGE/ORDERING INFORMATION MODEL ORDER NUMBER PACKAGE DESCRIPTION PACKAGE OPTION MARKING INFORMATION SGM321YC5/TR SC70-5 Tape and Reel, 3000 321 SGM321 SGM321YN5/TR SOT23-5 Tape and Reel, 3000 321 SGM358YS/TR SO-8 Tape and Reel, 2500 SGM358YS SGM358 SGM358YMS/TR MSOP-8 Tape and Reel, 3000 SGM358YMS SGM324YS/TR SO-16 Tape and Reel, 2500 SGM324YS SGM324 SGM324YTS TSSOP-16 Tape and Reel, 3000 SGM324YTS ABSOLUTE MAXIMUM RATINGS Supply Voltage, V+ to V- . . . . . . . . . . . . . . . . . . . . . 7.5 V Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . .(–VS )– 0.5 V to (+VS) +0.5V Storage Temperature Range . . . . . . . . .–65℃ to +150℃ Junction Temperature . . . . . . . . . . . . . . . .. . . . . . . .150℃ Operating Temperature Range . . . . . . . –45℃ to +85℃ Lead Temperature Range (Soldering 10 sec) . . . . . . . . . . .. . . . . . . . . . . . . . . . 300℃ ESD(HBM) . . . . . . . . . . .. . .. . . . .. . . . . . . . . . . . . . . .4KV NOTES 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION This integrated circuit can be damaged by ESD. Shengbang Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. SGM321/358/324 ４ TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100kΩ connected to Vs/2,unless otherwise noted. Small-Signal Step Response Large-Signal Step Response 2µs/div 10µs/div Small-Signal Overshoot vs.Load Capacitance 0 10 20 30 40 50 60 10 100 1000 10000 Load Capacitance(pF) Sm al l- Si gn al O ve rs ho ot (% ) G = -5RFB = 100KΩ Small-Signal Overshoot vs.Load Capacitance 0 10 20 30 40 50 60 10 100 1000 10000 Load Capacitance(pF) Sm al l- Si gn al O ve rs ho ot (% ) G = +1 RL = 100KΩ G = -1 RFB = 5KΩ G = -1 RFB = 100KΩ Maximum Output Voltage vs.Frequency 0 1 2 3 4 5 6 1 10 100 1000 10000 Frequency(kHz) Ou tp ut V ol ta ge (V p- p) Maximum Output Voltage Without Slew-Rate Induced Distortion VS = 5.5V VS = 5V VS = 2.5V Quiescent And Short-Circuit Current vs.Supply Voltage 25 30 35 40 45 50 2 2.5 3 3.5 4 4.5 5 5.5 Supply Voltage(V) Qu ie sc en t Cu rr en t( μA ) ISC IQ 5 15 20 10 25 30 Sh or t- Ci rc ui t Cu rr en t( mA ) 20 mV /d iv 50 0m V/ di v G = +1 CL = 100pFRL = 100KΩ G = +1 CL = 100pFRL = 100KΩ SGM321/358/324 ５ TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100kΩ connected to Vs/2,unless otherwise noted. CMRR And PSRR vs.Frequency 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 10000 Frequency(kHz) CM RR ,P SR R( dB ) CMRR PSRR Input Voltage Noise Spectral Density vs.Frequency 10 100 1000 0.01 0.1 1 10 100Frequency(kHz) Vo lt ag e No is e( nV / √H z) Output Voltage Swing vs.Output Current 0 1 2 3 0 4 8 12 16 20 Output Current(mA) Ou tp ut V ol ta ge (V ) 25℃ 135℃ -50℃ 25℃ 135℃ -50℃ VS = 3V Sourcing Current Sinking Current Output Voltage Swing vs.Output Current 0 1 2 3 4 5 0 5 10 15 20 25 30 Output Current(mA) Ou tp ut V ol ta ge (V ) 25℃135℃ -50℃ 25℃135℃ -50℃ VS = 5V Sourcing Current Sinking Current Supply Current vs.Temperature 30 35 40 45 50 55 60 -50 -30 -10 10 30 50 70 90 110 130 Temperature(℃) Su pp ly C ur re nt ( μ A) VS = 2.5V VS = 5V VS = 3V Open-Loop Gain vs.Temperature 60 70 80 90 100 110 120 -50 -30 -10 10 30 50 70 90 110 130 Temperature(℃) Op en – Lo op G ai n( dB ) RL = 5kΩ RL = 100kΩ SGM321/358/324 ６ TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100kΩ connected to Vs/2,unless otherwise noted. Common-Mode Rejection Ratio vs.Temperature 60 70 80 90 100 110 120 -50 -30 -10 10 30 50 70 90 110 130 Temperature(℃) CM RR (d B) -Vs < VCM <(+Vs) -Vs < VCM < (+Vs)-1.5V Power-Supply Rejection Ratio vs.Temperature 60 70 80 90 100 110 120 -50 -30 -10 10 30 50 70 90 110 130 Temperature(℃) PS RR (d B) Overload Recovery Time Time(2µs/div) Vs = 5V G = -5 VIN = 500mV2.5V 0V 500mV 0V SGM321/358/324 ７ APPLICATION NOTES Driving Capacitive Loads The SGM3XX can directly drive 250pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RLOAD. VIN VOUTSGM321 CL RISO Figure 1. Indirectly Driving Heavy Capacitive Load An improvement circuit is shown in Figure 2, It provides DC accuracy as well as AC stability. RF provides the DC accuracy by connecting the inverting signal with the output, CF and RIso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop. VIN VOUTSGM321 CL RISO RL RF CF Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. Power-Supply Bypassing and Layout The SGM3XX family operates from either a single +2.5V to +5.5V supply or dual ±1.25V to ±2.75V supplies. For single-supply operation, bypass the power supply VDD with a 0.1µF ceramic capacitor which should be placed close to the VDD pin. For dual-supply operation, both the VDD and the VSS supplies should be bypassed to ground with separate 0.1µF ceramic capacitors. 2.2µF tantalum capacitor can be added for better performance. SGM321 VDD Vn Vp VSS VOUT 10µF 0.1µF 10µF 0.1µF SGM321 Vn Vp VDD VSS(GND) VOUT 10µF 0.1µF Figure 3. Amplifier with Bypass Capacitors SGM321/358/324 ８ Typical Application Circuits Differential Amplifier The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then VOUT = ( Vp – Vn ) × R2 / R1 + Vref. Vn Vp VOUTSGM321 Vref R1 R2 R3 R4 Figure 4. Differential Amplifier Instrumentation Amplifier The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance. Vn Vp SGM321 Vref R1 R2 R3 R4 VOUT SGM321 SGM321 Figure 5. Instrumentation Amplifier Low Pass Active Filter The low pass filter shown in Figure 6 has a DC gain of ( - R2 / R1 ) and the –3dB corner frequency is 1/2πR2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration. VIN VOUTSGM321 R1 R2 R3 = R1 // R2 C Figure 6. Low Pass Active Filter SGM321/358/324 ９ PACKAGE OUTLINE DIMENSIONS SC70-5 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.650TYP 0.026TYP e1 1.200 1.400 0.047 0.055 L 0.525REF 0.021REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SGM321/358/324 １０ PACKAGE OUTLINE DIMENSIONS SOT23-5 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.400 0.012 0.016 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L 0.700REF 0.028REF L1 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° SGM321/358/324 １１ PACKAGE OUTLINE DIMENSIONS SO-8 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 B 0.330 0.510 0.013 0.020 C 0.190 0.250 0.007 0.010 D 4.780 5.000 0.188 0.197 E 3.800 4.000 0.150 0.157 E1 5.800 6.300 0.228 0.248 e 1.270TYP 0.050TYP L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° SGM321/358/324 １２ PACKAGE OUTLINE DIMENSIONS MSOP-8 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.800 1.200 0.031 0.047 A1 0.000 0.200 0.000 0.008 A2 0.760 0.970 0.030 0.038 b 0.30 TYP 0.012 TYP c 0.15 TYP 0.006 TYP D 2.900 3.100 0.114 0.122 e 0.65 TYP 0.026 TYP E 2.900 3.100 0.114 0.122 E1 4.700 5.100 0.185 0.201 L 0.410 0.650 0.016 0.026 θ 0° 6° 0° 6° SGM321/358/324 １３ PACKAGE OUTLINE DIMENSIONS SO-16 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 D 9.800 10.20 0.386 0.402 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 (BSC) 0.050 (BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° SGM321/358/324 １４ PACKAGE OUTLINE DIMENSIONS TSSOP-16 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max D 4.900 5.100 0.193 0.201 E 4.300 4.500 0.169 0.177 b 0.190 0.300 0.007 0.012 c 0.090 0.200 0.004 0.008 E1 6.250 6.550 0.246 0.258 A 1.100 0.043 A2 0.800 1.000 0.031 0.039 A1 0.020 0.150 0.001 0.006 e 0.65 (BSC) 0.026 (BSC) L 0.500 0.700 0.020 0.028 H 0.25(TYP) 0.01(TYP) θ 1° 7° 1° 7°