IRF540N

IRF540N HEXFET® Power MOSFET 03/13/01 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.15 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 100V RDS(on) = 44mΩ ID = 33A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. � Advanced Process Technology � Ultra Low On-Resistance � Dynamic dv/dt Rating � 175°C Operating Temperature � Fast Switching � Fully Avalanche Rated Description Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A IDM Pulsed Drain Current � 110 PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 0.87 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current� 16 A EAR Repetitive Avalanche Energy� 13 mJ dv/dt Peak Diode Recovery dv/dt � 7.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) PD - 91341B 查询IRF540N供应商查询IRF540N供应商 IRF540N 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)� ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V � trr Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A Qrr Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs � ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 33 110 A � Starting TJ = 25°C, L =1.5mH RG = 25Ω, IAS = 16A. (See Figure 12) � Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: � ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C � Pulse width ≤ 400µs; duty cycle ≤ 2%. � This is a typical value at device destruction and represents operation outside rated limits. � This is a calculated value limited to TJ = 175°C . Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 44 mΩ VGS = 10V, ID = 16A�� VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 21 ––– ––– S VDS = 50V, ID = 16A� ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 71 ID = 16A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 35 ––– ID = 16A td(off) Turn-Off Delay Time ––– 39 ––– RG = 5.1Ω tf Fall Time ––– 35 ––– VGS = 10V, See Fig. 10 � Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1960 ––– VGS = 0V Coss Output Capacitance ––– 250 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy� ––– 700� 185� mJ IAS = 16A, L = 1.5mH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current IRF540N www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T , Junction Temperature ( C) R , D ra in -to -S ou rc e O n Re sis ta nc e (N orm ali ze d) J D S( on ) ° � � V = I = GS D 10V 33A 1 10 100 1000 0.1 1 10 100 � 20µs PULSE WIDTH T = 25 CJ ° � TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) DS D 4.5V 1 10 100 1000 0.1 1 10 100 � 20µs PULSE WIDTH T = 175 CJ ° � TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) DS D 4.5V 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 � V = 50V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) GS D � T = 25 CJ ° � T = 175 CJ ° IRF540N 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 0 500 1000 1500 2000 2500 3000 V , Drain-to-Source Voltage (V) C, C ap ac ita nc e (pF ) DS � V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd � Ciss � Coss � Crss 0 20 40 60 80 0 4 8 12 16 20 Q , Total Gate Charge (nC) V , G at e- to -S ou rc e Vo lta ge (V ) G G S � � FOR TEST CIRCUIT SEE FIGURE I =D 13 16A �V = 20VDS V = 50VDS V = 80VDS 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 V ,Source-to-Drain Voltage (V) I , R ev er se D ra in C ur re nt (A ) SD SD � V = 0 V GS � T = 25 CJ ° � T = 175 CJ ° 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 I D , D ra in -to -S ou rc e Cu rre nt (A ) TA = 25°C TJ = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec IRF540N www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature VDS 90% 10% VGS td(on) tr td(off) tf VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. VGS + -VDD Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 T , Case Temperature ( C) I , D ra in C ur re nt (A ) °C D 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 � Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C � P t t DM 1 2 t , Rectangular Pulse Duration (sec) Th er m al R es po ns e (Z ) 1 th JC 0.01 0.02 0.05 0.10 0.20 D = 0.50 � SINGLE PULSE (THERMAL RESPONSE) IRF540N 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - VGS Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR )D SS IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current R G IA S 0 .01Ωtp D .U .T LVD S + - VD D D R IV E R A 1 5V 20V 25 50 75 100 125 150 175 0 100 200 300 400 Starting T , Junction Temperature ( C) E , Si ng le P ul se A va la nc he E ne rg y (m J) J AS ° � ID TOP BOTTOM 6.5A 11.3A 16A IRF540N www.irf.com 7 Peak Diode Recovery dv/dt Test Circuit P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W.Period + - + + +- - - � � � RG VDD • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer � * Reverse Polarity of D.U.T for P-Channel VGS [ ] [ ] *** VGS = 5.0V for Logic Level and 3V Drive Devices [ ] *** Fig 14. For N-channel HEXFET® power MOSFETs IRF540N 8 www.irf.com L E A D A S S IG NM E NT S 1 - G A T E 2 - D R A IN 3 - S O U RC E 4 - D R A IN - B - 1 .32 (.05 2) 1 .22 (.04 8) 3 X 0.55 (.02 2)0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 4.69 ( .18 5 ) 4.20 ( .16 5 ) 3X 0.93 (.03 7)0.69 (.02 7) 4.06 (.16 0) 3.55 (.14 0) 1.15 (.04 5) M IN 6.47 (.25 5) 6.10 (.24 0) 3 .7 8 (.149 ) 3 .5 4 (.139 ) - A - 10 .54 (.4 15) 10 .29 (.4 05)2.87 (.11 3) 2.62 (.10 3) 1 5.24 (.60 0) 1 4.84 (.58 4) 1 4.09 (.55 5) 1 3.47 (.53 0) 3 X 1 .4 0 (.0 55 )1 .1 5 (.0 45 ) 2.54 (.10 0) 2 X 0 .3 6 (.01 4) M B A M 4 1 2 3 N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB Package Outline TO-220AB Dimensions are shown in millimeters (inches) PA R T N U M B ERIN TE R N A TIO N A L R E C TIF IER L O G O E XA MP L E : TH IS IS AN IR F1 0 1 0 W IT H AS SE M B L Y L O T C O D E 9 B1 M A S SE M BL Y L O T C O D E D ATE C O D E (YYW W ) YY = YE AR W W = W E EK 9 2 4 6 IR F 10 1 0 9B 1 M A Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/01