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micron nand flash tn2913 TN-29-13: Determining NAND Flash Ready/Busy Status Introduction Technical Note Monitoring Ready/Busy Status in 2Gb, 4Gb, and 8Gb Micron NAND Flash Devices For detailed NAND Flash device information, refer to www.micron.com/products/nand/. Introduction Sy...

micron nand flash tn2913
TN-29-13: Determining NAND Flash Ready/Busy Status Introduction Technical Note Monitoring Ready/Busy Status in 2Gb, 4Gb, and 8Gb Micron NAND Flash Devices For detailed NAND Flash device information, refer to www.micron.com/products/nand/. Introduction Systems that utilize NAND Flash memory can use either the ready/busy pin or the status register to determine if a Micron NAND Flash device is busy or ready to accept a new command. This technical note addresses only the use of status register bit 5, which indi- cates the ready/busy status of the NAND Flash device. In addition to the ready/busy status recommendations provided here, Micron also recommends making full use of status register bits 0 and 1 to check PROGRAM and ERASE success, bit 6 to check the cache ready/busy status, and bit 7 to check write protect status. Four options for determining the NAND Flash ready/busy device status are presented in this technical note. Detailed explanations of each option follow. Monitoring Ready/Busy Status Using the R/B# Pin Micron NAND Flash devices are equipped with a ready/busy (R/B#) pin. The system can simply monitor this pin to determine the ready/busy status of the device. If the device is ready to accept a new command, R/B# will be HIGH; if the device is busy, R/B# will be LOW. This is the simplest method for determining the ready/busy status of the device; however, some systems lack the hardware resources to support the R/B# pin. In this case, other methods for monitoring NAND Flash device status are required. Monitoring Ready/Busy Using the READ STATUS (70h) Command Micron NAND Flash devices are equipped with an 8-bit status register that the system software can read during device operation. When bit 5 of this status register is HIGH, the device is ready; when LOW, the device is busy. To access the status register, the system must issue the 70h command, then toggle the read enable (RE#) pin from HIGH to LOW. Additional considerations must be taken into account when the system reads status on a continuing basis. The following examples illustrate three different methods of moni- toring ready/busy using the READ STATUS command. PDF: 09005aef81d73b68 / Source: 09005aef81d73975 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2913_ready_busy.fm - Rev. B 5/07 EN 1 ©2005 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. All information discussed herein is provided on an “as is” basis, without warranties of any kind. TN-29-13: Determining NAND Flash Ready/Busy Status Monitoring Ready/Busy Using the READ STATUS (70h) Command READ STATUS Method 1 To use this method, issue the 70h command, drive the RE# pin LOW, and then drive it HIGH. The status register is output to the I/Os. If I/O5 is LOW, the NAND Flash device is busy; the system toggles RE# again and rechecks I/O5. This process continues until I/O5 = 1, indicating the NAND Flash device is ready for another command. Figure 1: READ STATUS Method 1 Flow Chart Issue READ STATUS (70h) Command Drive RE# LOW Read status register output on I/O[7:0] Drive RE# HIGH I/O5 = 1 Yes Issue next required command No PDF: 09005aef81d73b68 / Source: 09005aef81d73975 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2913_ready_busy.fm - Rev. B 5/07 EN 2 ©2005 Micron Technology, Inc. All rights reserved. TN-29-13: Determining NAND Flash Ready/Busy Status Monitoring Ready/Busy Using the READ STATUS (70h) Command READ STATUS Method 2 To use this method, issue the 70h command and hold the RE# pin LOW. The status register output will continually change on the I/Os when RE# is LOW, so the user can simply monitor the output on I/O5 and wait for it to go HIGH, after which the next command can be issued. Figure 2: READ STATUS Method 2 Flow Chart Issue READ STATUS (70h) Command Drive RE# LOW Read status register output on I/O[7:0] I/O5 = 1 Yes Drive RE# HIGH Issue next required command No PDF: 09005aef81d73b68 / Source: 09005aef81d73975 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2913_ready_busy.fm - Rev. B 5/07 EN 3 ©2005 Micron Technology, Inc. All rights reserved. TN-29-13: Determining NAND Flash Ready/Busy Status Monitoring Ready/Busy Using the READ STATUS (70h) Command READ STATUS Method 3 (Not supported) To use this method, issue the 70h command, drive the RE# pin LOW, and then drive it HIGH. The status register is output to the I/Os. If I/O5 is LOW, the NAND Flash device is busy; the system issues another 70h command, then toggles RE# again and rechecks I/O5. This process continues until I/O5 = 1, indicating that the NAND Flash device is ready for another command. Figure 3: READ STATUS Method 3 Flow Chart Issue READ STATUS (70h) Command Drive RE# LOW Read status register output on I/O[7:0] Drive RE# HIGH I/O5 = 1 Yes Issue next required command No PDF: 09005aef81d73b68 / Source: 09005aef81d73975 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2913_ready_busy.fm - Rev. B 5/07 EN 4 ©2005 Micron Technology, Inc. All rights reserved. TN-29-13: Determining NAND Flash Ready/Busy Status Recommendations Recommendations Micron recommends monitoring the ready/busy status of NAND Flash devices using the R/B# pin, as this is the simplest method and requires the least software interaction between the system and the NAND Flash device. Where a system lacks hardware resources to support the R/B# pin, Micron recommends using READ STATUS Method 1 or 2. These methods require fewer system resources than READ STATUS Method 3. ® 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef81d73b68 / Source: 09005aef81d73975 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2913_ready_busy.fm - Rev. B 5/07 EN 5 ©2005 Micron Technology, Inc. All rights reserved. TN-29-13: Determining NAND Flash Ready/Busy Status Revision History Revision History Rev. B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5/07 • Page 1: Updated Web link and revised description. • “READ STATUS Method 3 (Not supported)” on page 4: Revised description. • Former Table 1 on page 5: Deleted table. • “Recommendations” on page 5: Revised description. Rev. A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10/05 • Initial release. PDF: 09005aef81d73b68 / Source: 09005aef81d73975 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2913_ready_busy.fm - Rev. B 5/07 EN 6 ©2005 Micron Technology, Inc. All rights reserved. Technical Note Introduction Monitoring Ready/Busy Status Using the R/B# Pin Monitoring Ready/Busy Using the READ STATUS (70h) Command READ STATUS Method 1 READ STATUS Method 2 READ STATUS Method 3 (Not supported) Recommendations Revision History
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