micron nand flash tn2903

TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices Introduction Technical Note Using Micron® MT29F2G08AACWP NAND Flash Memory In Toshiba TC58NVG1S3BTG00 Applications For functional and parametric specifications, refer to the product data sheet on Micron’s Web site: www.micron.com/products/nand Introduction Micron offers a family of NAND Flash devices that target high-density, low-cost applica- tions. This technical note compares the third-generation 2Gb Micron® NAND Flash device with 2Gb Toshiba device TC58NVG1S3BTG00. In most instances throughout this technical note, the actual Micron and Toshiba specifi- cations appear together. Differences between the two specifications are pointed out and implications discussed in the applicable section of the document. Where a difference is of particular importance to the user, pertinent details are highlighted. Where no differ- ence exists between the two specifications, this is noted as well. PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 1 ©2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. All information discussed herein is provided on an “as is” basis, without warranties of any kind. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices Part Numbering Part Numbering Figure 1 shows how to interpret the Micron part numbers, as well as supported options. Figure 1: Micron NAND Flash Part Number Chart MT 29F 2G 08 A A C WP ES :C Micron Technology Product Family 29F = Single-supply NAND Flash memory Density 2G = 2Gb 4G = 4Gb 8G = 8Gb Device Width 08 = 8 bits 16 = 16 bits Operating Voltage Range A = 3.3V (2.70–3.60V) B = 1.8V (1.70–1.95V) Design Revision C = First generation Production Status Blank = Production ES = Engineering sample MS = Mechanical sample QS = Qualification sample Operating Temperature Range Blank = Commercial (0°C to +70°C) ET = Extended (–40°C to +85°C) Reserved for Future Use Flash Performance Blank = Standard Package Codes WP = 48-pin TSOP I (lead-free) Feature Set A = First-generation die B = Second-generation die C = Third-generation die Classification # of die # of CE# # of R/B# I/O A 1 1 1 Common B 2 1 1 Common F 4 1 1 Common PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 2 ©2004 Micron Technology, Inc. All rights reserved. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices Part Replacement Part Replacement Micron NAND Flash devices offer a replacement for Toshiba parts. Table 1 provides equivalent part numbers. Architecture: Valid Blocks Micron and Toshiba specifications are identical with respect to the number of valid blocks in the devices. Table 2 provides a side-by-side comparison. Hardware Compatibility In addition to providing replacements for Toshiba devices, Micron NAND Flash devices offer specifications that are more suitable for current designs. DC Operating Conditions The Micron NAND Flash specification is basically the same as the Toshiba specification (see Table 3); however, Micron and numerous other manufacturers have moved away from using the older TTL specification designated by Toshiba. Most current designs are CMOS, where a ratio (VCC × 0.8) for the VIH parameter and (VCC × 0.2)for VIL is more appropriate. The published Micron VIH specification is 80 percent of VCC. This is a subtle but impor- tant parameter difference. In lower-voltage systems, the old TTL specification is mean- ingless, as VCC values can be less than the Toshiba VIH specification. Notes: 1. Toshiba device: –2V (pulse with less than 20ns). Table 1: Micron and Toshiba Equivalent Parts Micron Part Toshiba Part Density Voltage Bus Width Device ID Package Type Replacement Instructions MT29F2G08AACWP (single 2Gb die) TC58NVG1S3BTG00 (dual 1Gb-die stack) 2Gb 3.3V 8 DAh 48-pin TSOP Type 1 Direct replacement Table 2: Valid Block Comparison Parameter Symbol Micron Toshiba Min Typ Max Unit Min Typ Max Unit Number of valid blocks NVB 2,008 – 2,048 blocks 2,008 – 2,048 blocks Table 3: Recommended DC Operating Conditions Parameter Symbol Micron Toshiba Min Typ Max Unit Min Typ Max Unit Power supply voltage VCC 2.7 3.3 3.6 V 2.7 3.3 3.6 V High-level input voltage VIH VCC × 0.8 – VCC + 0.3 V 2.0 – VCC + 0.3 V Low-level Input voltage VIL –0.3 – VCC × 0.2 V –0.31 – 0.8 V PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 3 ©2004 Micron Technology, Inc. All rights reserved. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices AC Operating Characteristics DC Operating Characteristics Micron and Toshiba DC operating characteristics are shown in Table 4. AC Operating Characteristics As shown in Figures 2 and 3 on page 5 and Table 5 on page 6, there are slight timing dif- ferences between the Micron and Toshiba device specifications. The Toshiba device has a shorter setup time but requires a longer hold time. These timing differences result from the way Micron and Toshiba define timing parame- ters. In Figure 3 on page 5, many of Toshiba’s setup measurements are tied to the falling edge of WE# (WE# going LOW), while the hold measurements are tied to the rising edge of WE#. To make it easier for system designers, Micron specifications tie all timing to the rising (active) edge of WE# (see Figure 2 on page 5). Considering only published Toshiba setup and hold times, the Toshiba part appears faster. However, careful examination of the Toshiba specification shows that for the Toshiba device, the system designer must add the setup time (tCS, for example) to the clock width time (tWP) to arrive at the actual setup time required before the clock rising edge. In this example, tCS = 0ns; add this time to tWP = 25ns. The result is 25ns total setup time for the Toshiba device. The total Micron tCS specification time is 15ns. Hold time for the Micron device is only 5ns, whereas the Toshiba device requires a 10ns hold time. In all cases, the Micron specification meets or exceeds (is faster than) the Toshiba specification. The Micron device also runs with faster READ and WRITE clocks, making the Micron device significantly faster. Table 4: DC Characteristics TA = 0 to 70°C; VCC = 2.7–3.6V Parameter Condition Micron Toshiba Symbol Min Typ Max Unit Symbol Min Typ Max Unit Read current CE# = VIL; IOUT = 0mA; tCYCLE = 50ns ICC1 – 15 30 mA ICC01 – 10 30 mA Program current – ICC2 – 15 30 mA ICC07 – 10 30 mA Erase current – ICC3 – 15 30 mA ICC08 – 10 30 mA Standby current TTL CE# = VIH; WP# = 0V/VCC ISB1 – – 1 µA ICCS1 – – 1 µA Standby current CMOS CE# = VCC – 0.2V; WP# = 0V/VCC ISB2 – – 50 µA ICCS2 – 10 50 µA Input leakage current VIN = 0V to VCC ILI – – ±10 µA ILI – – ±10 µA Output leakage current VOUT = 0V to VCC ILO – – ±10 µA ILO – – ±10 µA R/B# output current VOL = 0.4V IOL (R/B#) 8 10 – mA IOL (R/B#) – 8 – mA High-level output voltage VCC, IOH = –400µA VOH 2.4 – – V VOH 2.4 – – V Low-level output voltage VCC, IOL = 2.1mA VOL – – 0.4 V VOL – – 0.4 V PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 4 ©2004 Micron Technology, Inc. All rights reserved. Designers should take these timing differences into account as they develop designs using either or both devices. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices AC Operating Characteristics Figure 2: Micron Timing Example Figure 3: Toshiba Timing Example WE# CE# ALE CLE I/Ox COMMAND tWP tCHtCS tALH tDHtDS tALS tCLHtCLS Don’t Care WE# CE# ALE CLE I/Ox tWP tCHtCS tALH tDHtDS tALS tCLHtCLS VIH or VIL PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 5 ©2004 Micron Technology, Inc. All rights reserved. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices AC Operating Characteristics Notes: 1. The equivalent of Toshiba tALEA for the Micron device is the combination of tAR (10ns) and tREA (18ns). 2. The equivalent of Toshiba tCLSTO for the Micron device is the combination of tCLEA (23ns) and tREA (18ns). 3. Micron does not distinguish between ID read and data read; tREA is used for both. 4. The Micron specification does not include this parameter; however, this timing has been Table 5: AC Characteristics and Recommended Operating Conditions PARAMETER Symbol Micron Toshiba NotesMin Max Unit Min Max Unit ALE access time tALEA – 28 ns – 45 ns 1 ALE hold time tALH 5 – ns 10 – ns ALE setup time tALS 10 – ns 0 – ns CE# access time tCEA – 23 ns – 45 ns CE# hold time tCH 5 – ns 10 – ns CE# HIGH to output high impedance tCHZ – 20 ns – 20 ns CLE access time tCLEA – 23 ns – 45 ns CLE hold time tCLH 5 – ns 10 – ns CLE setup time tCLS 10 – ns 0 – ns CLE access time (READ STATUS) tCLSTO – 41 ns – 45 ns 2 CE# setup time tCS 15 – ns 0 – ns CE# HIGH access time (READ STATUS) tCSTO – 23 ns – 45 ns Data hold time tDH 5 – ns 10 – ns Data setup time tDS 10 – ns 20 – ns Output high impedance to RE# falling edge tIR 0 – ns 0 – ns Data output hold time tOH 15 – ns 10 – ns Memory cell array to starting address tR – 25 µs – 25 µs Read cycle time tRC 30 – ns 50 – ns RE# access time (serial data access) tREA – 18 ns – 35 ns RE# access time (READ ID) tREAID – 18 ns – 35 ns 3 RE# HIGH hold time tREH 10 – ns 15 – ns RE# HIGH to WE# LOW tRHW 304 – ns 30 – ns RE# HIGH to output high impedance tRHZ – 30 ns – 30 ns Read pulse width tRP 15 – ns 35 – ns Ready to RE# falling edge tRR 20 – ns 20 – ns Device reset time (READ/PROGRAM/ERASE) tRST – 5/10/500 µs – 6/10/500 µs RE# LOW access time (READ STATUS) tRSTO – 18 ns – 35 ns Ready to WE# falling edge tRW 20 – ns 20 – ns WE# HIGH to busy tWB – 100 ns – 200 ns Write cycle time tWC 30 – ns 50 – ns WE# HIGH hold time tWH 10 – ns 15 – ns WE# HIGH to CE# LOW tWHC 304 – ns 30 – ns WE# HIGH to RE# LOW tWHR 60 – ns 30 – ns Write pulse width tWP 15 – ns 25 – ns WP# HIGH to WE# LOW tWW 100 – ns 100 – ns 4 PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 6 ©2004 Micron Technology, Inc. All rights reserved. verified in lab tests. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices AC Test Conditions AC Test Conditions As shown in Table 6, the specifications for the Micron and Toshiba parts are not identical for AC test conditions. The Micron input and output comparison points are presented as a ratio of the VCC voltage. PROGRAM and ERASE Characteristics The maximum PROGRAM and ERASE specifications for the Micron and Toshiba devices differ, as shown in Table 7. Notes: 1. The Micron specification is 8 program cycles for each 2,112-byte page. Absolute Maximum Ratings Table 6: AC Test Conditions Parameter Micron Toshiba Input level 3.3V, 0.0V 2.4V, 0.4V Input pulse rise and fall time 5ns 3ns Input comparison level VCC/2 1.5V, 1.5V Output data comparison level VCC/2 1.5V, 1.5V Output load CL (100pF) + TTL CL (100pF) + TTL Table 7: PROGRAM and ERASE Characteristics TA = 0–70°C; Vcc = 2.7–3.6V Parameter Symbol Micron Toshiba Min Typ Max Unit Min Typ Max Unit Number of PROGRAM cycles on same page before ERASE required (per 512 + 16 bytes)1 N – – 8 – – 8 BLOCK ERASE time tBERASE – 2 3 ms – 1.5 10 ms Average PROGRAM time tPROG – 300 700 µs – 200 500 µs Table 8: Absolute Maximum Values Comparison Rating Symbol Micron Toshiba Value Unit Value Unit Power supply voltage VCC –0.6 to 4.6 V –0.6 to 4.6 V Input voltage VIN –0.6 to 4.6 V –0.6 to 4.6 V I/O voltage VIO –0.6 to 4.6 V –0.6 to (VCC + 0.3V), where (VCC + 0.3V) ≤ 4.6V V Power dissipation PD < 0.3 W 0.3 W Soldering temperature (10s) TSOLDER 260 °C 260 °C Storage temperature TSTG –65 to +150 °C –55 to +150 °C Operating temperature TOPR 0 to 70 °C 0 to 70 °C PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 7 ©2004 Micron Technology, Inc. All rights reserved. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices Pin Configuration Pin Configuration With a few noted exceptions, the Micron and Toshiba devices are compatible. Three Micron pins are different from those in the Toshiba device. Comparing the two devices, the I/O pinout is identical; the I/O numbering scheme is different. Micron counts I/O[7:0], and Toshiba uses I/O[8:1]. Micron Pin 6 on the 2Gb Device This pin is NC on the 2Gb Micron device and is connected to ground on the Toshiba device. Grounding pin 6 on the Micron device is a suitable option. Micron Pins 6 and 10 on the 8Gb Device On the 8Gb Micron device, pins 6 and 10 are used as the second ready/busy (R/B#) and chip enable (CE#) signals. Designers interested in larger capacities should connect pins 6 and 10 to a second channel of their controller. These pins are NC on both the Micron and the Toshiba 2Gb devices. Forward-thinking designers should be aware of the additional capabilities of Micron’s larger devices and orient their designs to take full advantage of these capabilities in future product generations. PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 8 ©2004 Micron Technology, Inc. All rights reserved. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices Pin Configuration Figure 4: Micron Pin Configuration (x8) Figure 5: Toshiba Pin Configuration (x8) NC NC NC NC NC NC R/B# RE# CE# NC NC Vcc Vss NC NC CLE ALE WE# WP# DNU DNU DNU NC NC NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC DNU Vcc Vss NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC 1 ● 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 NC NC NC NC NC NC R/B# RE# CE# NC NC VCC VSS NC NC CLE ALE WE# WP# NC NC NC NC NC NC NC NC NC I/O8 I/O7 I/O6 I/O5 NC PSL NC VCC VSS NC NC NC I/O4 I/O3 I/O2 I/O1 NC NC NC NC 1 ● 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 9 ©2004 Micron Technology, Inc. All rights reserved. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices Power-Up Power-Up The Micron and Toshiba devices use the same supply voltage and power-on threshold (2.5V). It is important to note that the Toshiba device can take up to 1ms to become ready, whereas the Micron device is ready in 100µs. In a mixed environment, the Micron device will report a ready status earlier than the Toshiba device without compromising Toshiba parts. Figure 6: Micron Power-Up Figure 7: Toshiba Power-Up WE# R/B# WP# Vcc 100µs HIGH 3V device: ≈ 2.5V 3V device: ≈ 2.5V UndefinedDon’t Care Vcc CE#, WE#, RE#, CLE, ALE WP# R/B# 100µs MAX 1ms MAX Operation 0V 2.5V 2.7V VIH VIL Don’t Care Invalid PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 10 ©2004 Micron Technology, Inc. All rights reserved. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices Bus Operations Bus Operations The Micron device offers compatibility with all Toshiba bus operations. Tables 9 and 10 demonstrate this compatibility. Notes: 1. Mode selection settings: H = Logic level HIGH; L = Logic level LOW; X = “Don’t care.” 2. WP# should be biased to CMOS HIGH or LOW for standby. Notes: 1. Mode selection settings: H = Logic level HIGH; L = Logic level LOW; X = ”Don’t care.” Table 9: Micron Logic Table CLE1 ALE CE# WE# RE# WP# Read mode Command input H L L H X Address input L H L H X Write mode Command input H L L H H Address input L H L H H Data input L L L H H Sequential read and data output L L L H X During READ (busy) L L L H H X During PROGRAM (busy) X X X X X H During ERASE (busy) X X X X X H Write protect X X X X X L Standby X X H X X 0V/VCC2 Table 10: Toshiba Logic Table CLE1 ALE CE# WE# RE# WP# Command input H L L H X Data input L L L H H Address input L H L H X Serial data output L L L H X During PROGRAM (busy) X X X X X H During ERASE (busy) X X H X X H During READ (busy) X X L H H X PROGRAM, ERASE inhibit X X X X X L Standby X X H X X 0V/VCC PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm - Rev. B 5/07 EN 11 ©2004 Micron Technology, Inc. All rights reserved. TN-29-03: 2Gb NAND Flash Replacement for Toshiba Devices Software Software Software Compatibility The most important consideration relative to software compatibility is to ensure that multiple device IDs are supported by the intended software. This will make it easier to meet design requirements for NAND Flash devices from multiple vendors. Micron NAND Flash software has a number of modules to aid system development pro- cesses. To learn about Micron NAND Flash software, contact a local Micron sales office. As discussed previously, the Micron device supports additional commands that the Toshiba device does not. This will not present a problem, as the Micron device is back- ward-compatible with the Toshiba device. When these additional commands are imple- mented, additional performance gains may be realized without incurring additional hardware costs. Software Support for Device IDs All NAND Flash devices support a READ ID command to report each device ID (device manufacturer and device configuration). Most controllers utilize this feature to identify and correctly support the features of a specific device. For Toshiba devices, the first two device ID bytes reported are 98h and DAh (see Figure 9 on page 13). For Micron devices, the first two device ID bytes reported are 2Ch and DAh (see Figure 8 on page 13). If the user device ID software interrogates bytes 3 and 4 of the Toshiba device, the soft- ware will require minor modification in order to utilize the data reported from these bytes on Micron devices. Table 11: Byte Allocation Byte Description Micron Toshiba First Manufacturer ID 2Ch 98h Second Device ID See Table 1 on page 3 See Table 1 on page 3 Third Chip #, cell type, program page, write cache 80h 81h or 01h Fourth Organization: x8 95h 15h Organization: x16 D5h NA Fifth Plane #, plane size NA 44h or C4h PDF: 09005aef81697814 / Source: 09005aef816978b3 Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2903_nand_dropin_repl_for_toshiba.fm -