KIA830H

5A，500V N-CHANNEL MOSFET 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description The KIA830H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features „ RDS(ON)=1.5Ω@VGS=10 V „ Low gate charge ( typical 20nC) „ Fast switching capability „ Avalanche energy specified „ Improved dv/dt capability 3. Pin configuration Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1 of 5 5A，500V N-CHANNEL MOSFET 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolute maximum ratings (TC= 25 ºC , unless otherwise specified) Parameter Symbol Ratings Units Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V Tc=25°C 5.0 A Drain currenet continuous Tc=100°C ID 3.0 A Drain current pulsed (note1) IDP 20 A Repetitive (note1) EAR 7.6 mJ Avalanche energy Single pulse (note2) EAS 305 mJ Peak diode recovery dv/dt (note3) dv/dt 4.5 V/ns Tc=25°C 76 W Total power dissipation Derate above 25°C PD 0.6 W/°C Junction temperature TJ +150 °C Storage temperature TSTG -55~+150 °C 5. Thermal characteristics Parameter Symbol Ratings Units Thermal resistance junction-ambient RthJA 62.5 Thermal resistance, case-to-sink typ. RthCS 0.5 Thermal resistance junction-case RthJC 1.2 °C/W 2 of 5 5A，500V N-CHANNEL MOSFET 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electrical characteristics (TJ=25°C,unless otherwise notes) Parameter Symbol Test Conditions Min Typ Max Units Off characteristics Drain-source breakdown voltage BVDSS VGS=0V,ID=250μA 500 - - V VDS=500V,VGS=0V - - 1 μA Zero gate voltage drain current IDSS VDS=400V,TC=125℃ - - 10 μA Forward VGS=30V,VDS=0V - - 100 nA Gate-body leakage current Reverse IGSS VGS=-30V,VDS=0V - - -100 nA Breakdown voltage temperature coefficient △BVDSS/△TJ ID=250μA - 0.6 - V/°C On characteristics Gate threshold voltage VGS(TH) VDS=VGS, ID=250μA 2.0 - 4.0 V Static drain-source on-resistance RDS(ON) VDS=10V,ID=2.5A - 1.10 1.5 Ω Dynamic characteristics Input capacitance CISS - 520 - pF Output capacitance COSS - 80 - pF Reverse transfer capacitance CRSS VDS=25V,VGS=0V, f=1MHZ - 15 - pF Switching characteristics Turn-on delay time tD(ON) - 10 - ns Rise time tR - 50 - ns Turn-off delay time tD(OFF) - 50 - ns Fall time tF VDD=250V,ID=5.0A, RG=25Ω (note4,5) - 50 - ns Total gate charge QG - 20 - nC Gate-source charge QGS - 2.5 - nC Gate-drain charge QGD VDS=400V, ID=5.0A, VGS=10V (note4,5) - 10 - nC Drain-source diode characteristics Drain-source diode forward voltage VSD VGS=0V,ISD=5.0A - - 1.4 V Continuous drain-source current ISD - - 5.0 A Pulsed drain-source current ISM - - 20.0 A Reverse recovery time tRR - 260 - ns Reverse recovery charge QRR ISD=5.0A, dISD/dt=100A/μs (note4) - 2.0 - μC Note：1. Repetitive rating : pulse width limited by maximum junction temperature 2. L=22mH, IAS= 5.0A, VDD=50V, RG= 25Ω, starting TJ=25°C 3. ISD≤5.0A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C 4. Pulse test : pulse width≤300μs, duty cycle≤2% 5. Essentially independent of operating temperature 3 of 5 5A，500V N-CHANNEL MOSFET 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Test circuits and waveforms 4 of 5 5A，500V N-CHANNEL MOSFET 830HKIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5 of 5