AD_OP27

REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a OP27 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002 Low-Noise, Precision Operational Amplifier PIN CONNECTIONS TO-99 (J-Suffix) V+ OUT NC 4V– (CASE) BAL BAL 1 –IN 2 +IN 3 OP27 NC = NO CONNECT FEATURES Low Noise: 80 nV p-p (0.1 Hz to 10 Hz), 3 nV/√Hz Low Drift: 0.2 �V/�C High Speed: 2.8 V/�s Slew Rate, 8 MHz Gain Bandwidth Low VOS: 10 �V Excellent CMRR: 126 dB at VCM of ±11 V High Open-Loop Gain: 1.8 Million Fits 725, OP07, 5534A Sockets Available in Die Form GENERAL DESCRIPTION The OP27 precision operational amplifier combines the low offset and drift of the OP07 with both high speed and low noise. Offsets down to 25 µV and drift of 0.6 µV/°C maximum make the OP27 ideal for precision instrumentation applications. Exceptionally low noise, en = 3.5 nV/√Hz, at 10 Hz, a low 1/f noise corner frequency of 2.7 Hz, and high gain (1.8 million), allow accurate high-gain amplification of low-level signals. A gain-bandwidth product of 8 MHz and a 2.8 V/µsec slew rate provides excellent dynamic accuracy in high-speed, data- acquisition systems. A low input bias current of ±10 nA is achieved by use of a bias-current-cancellation circuit. Over the military temperature range, this circuit typically holds IB and IOS to ±20 nA and 15 nA, respectively. The output stage has good load driving capability. A guaranteed swing of ±10 V into 600 Ω and low output distortion make the OP27 an excellent choice for professional audio applications. (Continued on page 7) V– V+ Q2B R2* Q3 Q2AQ1A Q1B R4 R1* R3 1 8 VOS ADJ. R1 AND R2 ARE PERMANENTLY ADJUSTED AT WAFER TEST FOR MINIMUM OFFSET VOLTAGE. * NONINVERTING INPUT (+) INVERTING INPUT (–) Q6 Q21 C2 R23 R24 Q23 Q24 Q22 R5 Q11 Q12 Q27 Q28 C1 R9 R12 C3 C4 Q26 Q20 Q19 Q46 Q45 OUTPUT Figure 1. Simplified Schematic 8-Pin Hermetic DIP (Z-Suffix) Epoxy Mini-DIP (P-Suffix) 8-Pin SO (S-Suffix) 8 7 6 5 1 2 3 4 NC = NO CONNECT VOS TRIM –IN +IN VOS TRIM V+ OUT NCV– OP27 REV. A–2– OP27 ELECTRICAL CHARACTERISTICS OP27A/E OP27F OP27C/G Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit INPUT OFFSET VOLTAGE1 VOS 10 25 20 60 30 100 µV LONG-TERM VOS STABILITY2, 3 VOS/Time 0.2 1.0 0.3 1.5 0.4 2.0 µV/MO INPUT OFFSET CURRENT IOS 7 35 9 50 12 75 nA INPUT BIAS CURRENT IB ±10 ±40 ±12 ±55 ±15 ±80 nA INPUT NOISE VOLTAGE3, 4 en p-p 0.1 Hz to 10 Hz 0.08 0.18 0.08 0.18 0.09 0.25 µV p-p INPUT NOISE en fO = 10 Hz 3.5 5.5 3.5 5.5 3.8 8.0 nV/√Hz Voltage Density3 fO = 30 Hz 3.1 4.5 3.1 4.5 3.3 5.6 nV/√Hz fO = 1000 Hz 3.0 3.8 3.0 3.8 3.2 4.5 nV/√Hz INPUT NOISE in fO = 10 Hz 1.7 4.0 1.7 4.0 1.7 pA/√Hz Current Density3, 5 fO = 30 Hz 1.0 2.3 1.0 2.3 1.0 pA/√Hz fO = 1000 Hz 0.4 0.6 0.4 0.6 0.4 0.6 pA/√Hz INPUT RESISTANCE Differential-Mode6 RIN 1.3 6 0.94 5 0.7 4 MΩ Common-Mode RINCM 3 2.5 2 GΩ INPUT VOLTAGE RANGE IVR ±11.0 ±12.3 ±11.0 ±12.3 ±11.0 ±12.3 V COMMON-MODE REJECTION RATIO CMRR VCM = ±11 V 114 126 106 123 100 120 dB POWER SUPPLY PSRR VS = ±4 V REJECTION RATIO to ±18 V 1 10 1 10 2 20 µV/V LARGE-SIGNAL AVO RL ≥ 2 kΩ, VOLTAGE GAIN VO = ±10 V 1000 1800 1000 1800 700 1500 V/mV RL ≥ 600 Ω, VO = ±10 V 800 1500 800 1500 600 1500 V/mV OUTPUT VOLTAGE SWING VO RL ≥ 2 kΩ ±12.0 ±13.8 ±12.0 ±13.8 ±11.5 ±13.5 V RL ≥ 600 Ω ±10.0 ±11.5 ±10.0 ±11.5 ±10.0 ±11.5 V SLEW RATE7 SR RL ≥ 2 kΩ 1.7 2.8 1.7 2.8 1.7 2.8 V/µs GAIN BANDWIDTH PRODUCT7 GBW 5.0 8.0 5.0 8.0 5.0 8.0 MHz OPEN-LOOP OUTPUT RESISTANCE RO VO = 0, IO = 0 70 70 70 Ω POWER CONSUMPTION Pd VO 90 140 90 140 100 170 mW OFFSET ADJUSTMENT RANGE RP = 10 kΩ ±4.0 ±4.0 ±4.0 mV NOTES 1Input offset voltage measurements are performed ~ 0.5 seconds after application of power. A/E grades guaranteed fully warmed up. 2Long-term input offset voltage stability refers to the average trend line of VOS versus. Time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5 µV. Refer to typical performance curve. 3Sample tested. 4See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester. 5See test circuit for current noise measurement. 6Guaranteed by input bias current. 7Guaranteed by design. (@ VS = ±15 V, TA = 25�C, unless otherwise noted.) –SPECIFICATIONS REV. A –3– OP27 (@ VS = ±15 V, –55�C ≤ TA ≤ 125�C, unless otherwise noted.)ELECTRICAL CHARACTERISTICS OP27A OP27C Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT OFFSET VOLTAGE1 VOS 30 60 70 300 µV AVERAGE INPUT OFFSET DRIFT TCVOS2 TCVOSn3 0.2 0.6 4 1.8 µV/°C INPUT OFFSET CURRENT IOS 15 50 30 135 nA INPUT BIAS CURRENT IB ±20 ±60 ±35 ±150 nA INPUT VOLTAGE RANGE IVR ±10.3 ±11.5 ±10.2 ±11.5 V COMMON-MODE REJECTION RATIO CMRR VCM = ±10 V 108 122 94 118 dB POWER SUPPLY REJECTION RATIO PSRR VS = ±4.5 V to ±18 V 2 16 4 51 µV/V LARGE-SIGNAL VOLTAGE GAIN AVO RL ≥ 2 kΩ, VO = ±10 V 600 1200 300 800 V/mV OUTPUT VOLTAGE SWING VO RL ≥ 2 kΩ ±11.5 ±13.5 ±10.5 ±13.0 V NOTES 1Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully warmed up. 2The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kΩ to 20 kΩ. TCVOS is 100% tested for A/E grades, sample tested for C/F/G grades. 3Guaranteed by design. REV. A–4– OP27 ELECTRICAL CHARACTERISTICS (@ VS = ±15 V, –25�C¯≤ TA ≤ 85�C for OP27J, OP27Z, 0�C ≤ TA ≤ 70�C for OP27EP, OP27FP, and –40�C ≤ TA ≤ 85�C for OP27GP, OP27GS, unless otherwise noted.) OP27E OP27F OP27G Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit INPUT ONSET VOLTAGE VOS 20 50 40 140 55 220 µV AVERAGE INPUT OFFSET DRIFT TCVOS1 0.2 0.6 0.3 1.3 0 4 1.8 µV/°C TCVOSn2 0.2 0.6 0.3 1.3 0 4 1.8 µV/°C INPUT OFFSET CURRENT IOS 10 50 14 85 20 135 nA INPUT BIAS CURRENT IB ±14 ±60 ±18 ±95 ±25 ±150 nA INPUT VOLTAGE RANGE IVR ±10.5 ±11.8 ±10.5 ±11.8 ±10.5 ±11.8 V COMMON-MODE REJECTION RATIO CMRR VCM = ±10 V 110 124 102 121 96 118 dB POWER SUPPLY REJECTION RATIO PSRR VS = ±4.5 V 2 15 2 16 2 32 µV/V to ±18 V LARGE-SIGNAL VOLTAGE GAIN AVO RL ≥ 2 kΩ, VO = ±10 V 750 1500 700 1300 450 1000 V/mV OUTPUT VOLTAGE SWING VO RL ≥ 2 kΩ ±11.7 ±13.6 ±11.4 ±13.5 ±11.0 ±13.3 V NOTES 1The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kΩ to 20 kΩ. TCVOS is 100% tested for A/E grades, sample tested for C/F/G grades. 2Guaranteed by design. REV. A –5– OP27 OP27N OP27G OP27GR Parameter Symbol Conditions Limit Limit Limit Unit INPUT OFFSET VOLTAGE* VOS 35 60 100 µV Max INPUT OFFSET CURRENT IOS 35 50 75 nA Max INPUT BIAS CURRENT IB ±40 ±55 ±80 nA Max INPUT VOLTAGE RANGE IVR ±11 ±11 ±11 V Min COMMON-MODE REJECTION RATIO CMRR VCM = IVR 114 106 100 dB Min POWER SUPPLY PSRR VS = ±4 V to ±18 V 10 10 20 µV/V Max LARGE-SIGNAL VOLTAGE GAIN AVO RL ≥ 2 kΩ, VO = ±10 V 1000 1000 700 V/mV Min AVO RL ≥ 600 Ω, VO = ±10 V 800 800 600 V/mV Min OUTPUT VOLTAGE SWING VO RL ≥ 2 kΩ ±12.0 ±12.0 +11.5 V Min VO RL2600n ±10.0 ±10.0 ±10.0 V Min POWER CONSUMPTION Pd VO = 0 140 140 170 mW Max NOTE *Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. WAFER TEST LIMITS (@ VS = ±15 V, TA = 25�C unless otherwise noted.) DICE CHARACTERISTICS 1. NULL 2. (–) INPUT 3. (+) INPUT 4. V– 6. OUTPUT 7. V+ 8. NULL DIE SIZE 0.109 � 0.055 INCH, 5995 SQ. MILS (2.77 � 1.40mm, 3.88 SQ. mm) REV. A–6– OP27 OP27N OP27G OP27GR Parameter Symbol Conditions Typical Typical Typical Unit AVERAGE INPUT OFFSET VOLTAGE DRIFT* TCVOS or Nulled or Unnulled 0.2 0.3 0.4 µV/°C TCVOSn RP = 8 kΩ to 20 kΩ AVERAGE INPUT OFFSET CURRENT DRIFT TCIOS 80 130 180 pA/°C AVERAGE INPUT BIAS CURRENT DRIFT TCIB 100 160 200 pA/°C INPUT NOISE VOLTAGE DENSITY en fO = 10 Hz 3.5 3.5 3.8 nV/√Hz en fO = 30 Hz 3.1 3.1 3.3 nV/√Hz en fO = 1000 Hz 3.0 3.0 3.2 nV/√Hz INPUT NOISE CURRENT DENSITY in fO = 10 Hz 1.7 1.7 1.7 pA/√Hz in fO = 30 Hz 1.0 1.0 1.0 pA/√Hz in fO = 1000 Hz 0.4 0.4 0.4 pA/√Hz INPUT NOISE VOLTAGE enp-p 0.1 Hz to 10 Hz 0.08 0.08 0.09 µV p-p SLEW RATE SR RL ≥ 2 kΩ 2.8 2.8 2.8 V/µs GAIN BANDWIDTH PRODUCT GBW 8 8 8 MHz NOTE *Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. TYPICAL ELECTRICAL CHARACTERISTICS (@ VS = ±15 V, TA = 25�C unless otherwise noted.) REV. A OP27 –7– Package Type �JA3 �JC Unit TO 99 (J) 150 18 °C/W 8-Lead Hermetic DlP (Z) 148 16 °C/W 8-Lead Plastic DIP (P) 103 43 °C/W 20-Contact LCC (RC) 98 38 °C/W 8-Lead SO (S) 158 43 °C/W NOTES 1For supply voltages less than ±22 V, the absolute maximum input voltage is equal to the supply voltage. 2The OP27’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±0.7 V, the input current should be limited to 25 mA. 3�JA is specified for worst-case mounting conditions, i.e., �JA is specified for device in socket for TO, CERDIP, and P-DIP packages; �JA is specified for device soldered to printed circuit board for SO package. 4Absolute Maximum Ratings apply to both DICE and packaged parts, unless otherwise noted. ABSOLUTE MAXIMUM RATINGS4 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V Input Voltage1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . ±0.7 V Differential Input Current2 . . . . . . . . . . . . . . . . . . . . ±25 mA Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range OP27A, OP27C (J, Z) . . . . . . . . . . . . . . . . –55°C to +125°C OP27E, OP27F (J, Z) . . . . . . . . . . . . . . . . . –25°C to +85°C OP27E, OP27F (P) . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C OP27G (P, S, J, Z) . . . . . . . . . . . . . . . . . . –40°C to +85°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300°C Junction Temperature . . . . . . . . . . . . . . . . . –65°C to +150°C ORDERING INFORMATION1 Package TA = 25°C Operating VOS Max CERDIP Plastic Temperature (µV) TO-99 8-Lead 8-Lead Range 25 OP27AJ2, 3 OP27AZ2 MIL 25 OP27EJ2, 3 OP27EZ OP27EP IND/COM 60 OP27FP3 IND/COM 100 OP27CZ3 MIL 100 OP27GJ OP27GZ OP27GP XIND 100 OP27GS4 XIND NOTES 1Burn-in is available on commercial and industrial temperature range parts in CERDIP, plastic DIP, and TO-can packages. 2For devices processed in total compliance to MIL-STD-883, add /883 after part number. Consult factory for 883 data sheet. 3Not for new design; obsolete April 2002. 4For availability and burn-in information on SO and PLCC packages, contact your local sales office. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP27 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE (Continued from page 1) PSRR and CMRR exceed 120 dB. These characteristics, coupled with long-term drift of 0.2 µV/month, allow the circuit designer to achieve performance levels previously attained only by dis- crete designs. Low-cost, high-volume production of OP27 is achieved by using an on-chip Zener zap-trimming network. This reliable and stable offset trimming scheme has proved its effectiveness over many years of production history. The OP27 provides excellent performance in low-noise, high- accuracy amplification of low-level signals. Applications include stable integrators, precision summing amplifiers, precision voltage- threshold detectors, comparators, and professional audio circuits such as tape-head and microphone preamplifiers. The OP27 is a direct replacement for 725, OP06, OP07, and OP45 amplifiers; 741 types may be directly replaced by remov- ing the 741’s nulling potentiometer. REV. A OP27 –8– FREQUENCY – Hz G AI N – dB 100 0.01 90 80 70 60 50 0.1 1 10 100 40 30 TEST TIME OF 10sec FURTHER LIMITS LOW FREQUENCY (<0.1Hz) GAIN TPC 1. 0.1 Hz to 10 Hzp-p Noise Tester Frequency Response BANDWIDTH – Hz R M S VO LT AG E N O IS E – � V 10 100k 1 0.1 0.01 100 1k 10k TA = 25�C VS = �15V TPC 4. Input Wideband Voltage Noise vs. Bandwidth (0.1 Hz to Frequency Indicated) TOTAL SUPPLY VOLTAGE (V+ – V–) – V VO LT AG E NO IS E – n V/ H z 5 4 1 0 10 4020 30 3 2 TA = 25�C AT 10Hz AT 1kHz TPC 7. Voltage Noise Density vs. Supply Voltage –Typical Performance Characteristics FREQUENCY – Hz 10 1 TA = 25�C VS = �15V 9 8 7 6 5 4 3 2 1 10 100 1k VO LT AG E NO IS E – n V/ H z I/F CORNER = 2.7Hz TPC 2. Voltage Noise Density vs. Frequency SOURCE RESISTANCE – � 100 1 10k100 1k TO TA L N O IS E – n V/ H z 10 TA = 25�C VS = �15V R2 R1 RS – 2R1 AT 1kHz AT 10Hz RESISTOR NOISE ONLY TPC 5. Total Noise vs. Sourced Resistance FREQUENCY – Hz CU RR EN T NO IS E – pA / Hz 10.0 0.1 10 10k 1.0 100 1k I/F CORNER = 140Hz TPC 8. Current Noise Density vs. Frequency FREQUENCY – Hz 100 1 1 10 100 1k VO LT AG E NO IS E – n V/ H z 10 LOW NOISE AUDIO OP AMP INSTRUMENTATION RANGE TO DC AUDIO RANGE TO 20kHz I/F CORNER 741 OP27 I/F CORNER I/F CORNER = 2.7Hz TPC 3. A Comparison of Op Amp Voltage Noise Spectra TEMPERATURE – �C VO LT AG E NO IS E – n V/ Hz 5 –50 –25 0 25 50 75 100 125 4 3 2 1 AT 10Hz AT 1kHz VS = �15V TPC 6. Voltage Noise Density vs. Temperature TOTAL SUPPLY VOLTAGE – V SU PP LY C UR RE NT – m A 5.0 5 TA = +125�C 4.0 3.0 2.0 1.0 15 25 35 45 TA = +25�C TA = –55�C TPC 9. Supply Current vs. Supply Voltage REV. A –9– OP27 TEMPERATURE – �C O FF SE T VO LT AG E – � V 60 –75 40 20 0 –20 –40 –60 –50 –25 0 25 50 75 100 125 150 175 50 10 –30 –70 30 –10 –50 TRIMMING WITH 10k� POT DOES NOT CHANGE TCVOS OP27C OP27A OP27A OP27A OP27C TPC 10. Offset Voltage Drift of Five Representative Units vs. Temperature TIME – Sec O PE N- LO O P G AI N – dB 30 –20 5 0 0 20 40 60 80 100 25 20 15 10 TA = 25�C TA = 70�C DEVICE IMMERSED IN 70�C OIL BATH VS = �15V THERMAL SHOCK RESPONSE BAND TPC 13. Offset Voltage Change Due to Thermal Shock FREQUENCY – Hz VO LT AG E G AI N – dB 130 1 110 90 70 50 30 10 –10 10 100 1k 10k 100k 1M 10M 100M TPC 16. Open-Loop Gain vs. Frequency TIME – Months CH AN G E IN O FF SE T VO LT AG E – � V 6 0 2 –2 –6 4 0 –2 –6 1 2 3 4 5 6 7 4 0 –4 6 2 –4 TPC 11. Long-Term Offset Voltage Drift of Six Representative Units TEMPERATURE – �C IN PU T BI AS C UR RE NT – n A –50 40 20 0 –25 0 25 50 75 100 125 150 50 30 10 VS = �15V OP27A OP27C TPC 14. Input Bias Current vs. Temperature TEMPERATURE – �C SL EW R AT E – V/ � s –50 60 2 –25 0 25 50 75 100 125 4 VS = �15V SLEW 50 70 3 PH AS E M AR GI N – De gr ee s 10 9 8 7 6 GA IN B AN DW ID TH P RO DU CT – M Hz GBW –75 �M TPC 17. Slew Rate, Gain-Bandwidth Product, Phase Margin vs. Temperature TIME AFTER POWER ON – Min CH AN G E IN IN PU T O FF SE T VO LT AG E – � V 10 1 0 1 42 3 5 TA = 25�C VS = 15V 5 OP27 C/G OP27 F OP27 A/E TPC 12. Warm-Up Offset Voltage Drift TEMPERATURE – �C IN PU T O FF SE T CU RR EN T – n A –75 50 0 –50 –25 0 25 50 75 100 125 VS = �15V 40 30 20 10 OP27A OP27C TPC 15. Input Offset Current vs. Temperature FREQUENCY – Hz 25 1M 10M 100M G AI N – dB 20 15 10 5 0 –5 –10 80 100 120 140 160 180 200 220 PH A SE S HI FT – D eg re es TA = 25�C VS = �15V � GAIN PHASE MARGIN = 70� TPC 18. Gain, Phase Shift vs. Frequency REV. A OP27 –10– TOTAL SUPPLY VOLTAGE – V O PE N- LO O P G AI N – V/ � V 2.5 0 10 4020 30 TA = 25�C 50 2.0 1.5 1.0 0.5 0 RL = 2k� RL = 1k� TPC 19. Open-Loop Voltage Gain vs. Supply Voltage CAPACITIVE LOAD – pF % O VE R SH O OT 80 60 0 0 500 20001000 1500 40 20 VS = �15V VIN = 100mV AV = +1 100 2500 TPC 22. Small-Signal Overshoot vs. Capacitive Load TIME FROM OUTPUT SHORTED TO GROUND – Min SH O RT - CI RC UI T CU RR EN T – m A 60 0 1 42 3 5 50 40 30 20 10 TA = 25�C VS = �15V ISC(+) ISC(–) TPC 25. Short-Circuit Current vs. Time FREQUENCY – Hz 28 1k 10k 100k 1M PE A K -T O - PE A K A M PL IT UD E – V 24 20 16 12 8 4 0 TA = 25�C VS = �15V 10M TPC 20. Maximum Output Swing vs. Frequency 20mV 500ns 50mV 0V –50mV AVCL = +1 CL = 15pF VS = �15V TA = 25�C TPC 23. Small-Signal Transient Response FREQUENCY – Hz CM RR – dB 140 1k 120 100 80 60 10k 100k 1M100 VS = �15V TA = 25�C VCM = �10V TPC 26. CMRR vs. Frequency LOAD RESISTANCE – � M A XI M UM O UT PU T – V 18 100 1k 10k 16 14 12 10 8 6 4 2 0 –2 TA = 25�C VS = �15V POSITIVE SWING NEGATIVE SWING TPC 21. Maximum Output Voltage vs. Load Resistance 2V 2�s +5V 0V –5V AVCL = +1 VS = �15V TA = 25�C TPC 24. Large-Signal Transient Response SUPPLY VOLTAGE – V CO M M O N- M O DE R AN G E – V 16 0 �5 12 8 4 0 –4 �10 �15 �20 –8 –12 –16 TA = –55�C TA = +125�C TA = +25�C TA = +25�C TA = –55�C TA = +125�C TPC 27. Common-Mode Input Range vs. Supply Voltage REV. A –11– OP27 OP12 OP27 D.U.T. 100k� 4.3k� 4.7�F 2k� 24.3k� VOLTAGE GAIN = 50,000 2.2�F 22�F 110k� SCOPE � 1 RIN = 1M� 0.1�F 10� 100k� 0.1�F TPC 28. Voltage Noise Test Circuit (0.1 Hz to 10 Hz) LOAD RESISTANCE – � 2.4 100 1k 10k 100k O PE N- LO O P VO LT AG E G AI N – V/ � V TA = 25�C VS = �15V2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 TPC 29. Open-Loop Voltage Gain vs. Load Resistance 1 SEC/DIV 120 80 40 0 –40 –90 –120 VO LT AG E NO IS E – n V 0.1Hz to 10Hz p-p NOISE TPC 30. Low-Frequency Noise APPLICATION INFORMATION OP27 series units may be inserted directly into 725 and OP07 sockets with or without removal of external compensation or nulling components. Additionally, the OP27 may be fitted to unnulled 741-type sockets; however, if conventional 741 nulling circuitry is in use, it should be modified or removed to ensure correct OP27 operation. OP27 offset voltage may be nulled to zero (or another desired setting) using a potentiometer (see Offset Nulling Circuit). The OP27 provides stable operation with load capacitances of up to 2000 pF and ±10 V swings; larger capacitances should be decoupled with a 50 Ω resistor inside the feedback loop. The OP27 is unity-gain stable. Thermoelectric voltages generated by dissimilar metals at the input terminal contacts can degrade the drift performance. Best operation will be obtained when both input contacts are main- tained at the same temperature. OFFSET VOLTAGE ADJUSTME