三星 LED 株式会社LED 制品介绍

三星 LED 株式会社LED 制品介绍 2009.06 三星 LED 株式会社 LED 制品介绍 MANU 制 品 概 念 工 艺 流 程 重 点 改 善 注 意 事 项 What IS LED? Introduction 半导体发光二极 管(LED)是在半导体P-N结或类似的结构中通以正向电流，以高效率发出可见光 或红外辐射的器件。 LED的发光机理:p-n结未知电压是构成一定的势垒;当加正 向偏置时势垒下降，p区和n 区的多数载流子向对方扩散。由于电子迁移率?比空穴 迁移率大的多，出现大量电子向p区扩散，构成对p区少数载流子的注入。这些电子 和价带上的空穴复合，复合时得到的能量以光能的形式释放。这就是p-n结发光的原 理。 LED Business History - Apr. 1995 : LED 事业开始(基于传统基础的 LED) - Aug.1999 : InGaN 蓝光Chip的开发 及 量产 - Jun. 2004 : LED PKG的中国工厂在 天津建立 - Sep. 2006 : LED BLU Module MP for 40 inch LCD TV (40”)开始 - Aug. 2008 : 量产产品 - 用于手机背光S/V LED , Note-PC;照明用Middle / High Power LED - Jun.2009 : 天津三星 LED公司正式成立 Production Line Location R&D (Headquarter) Fab Line for Epi and Chip Pilot PKG line for R&D PKG Line 的量产 天津 工厂 水源 工厂 I,,,,,, ，, , ,,,, Tianjin, China Suwon PKG Factory 2 Factories [ SUWON ] - R&D - EPI / FAB C/R Samsung LED – Introduction Suwon Facilities - EPI Wafer & FAB Line over 250 M/Month ?07 ?08 ?09 for Chip Chip (M pcs) 150 250 400 PKG (M pcs) 130 220 350 China Facilities for Assembly PKG - Package Line over 220 M/Month [ M/month ] Market Segment [?08] CAPACITY PLAN Samsung LED – Capa. Samsung has various kinds of application for the LED [ Mobile ] [Large Display] [ Lighting ] ? Started Sideview LED Biz in July, 2004, and catching up leading companies; “N” company ? Started LED BLU development in 2004 - 40”,46”, 52” 70” LCD TV Sideview 1W High Line Up : LED Module for Power LED (Sunnix4 PKG) ? In the beginning, Signage application, moving to other ones Signage Street Light(Everland) Display Panel(cheil Industries) Bordeaux TV(SEC) Post Office Sign(Japan) ? LED Light-bar for Note-PC - Line Up : LED Module for 12.1”,13.3” Samsung LED – Application Field Side view LED Road map ?06年 ?06年 ?08年 ?09年 0.8t 0.4t 2.5cd 3.0cd SPL, MP Q3 Q4 Q1 Q2 Q3 Q4 S/V LED ? color (x=0.3) ?10年 2.0cd 2.2cd 2.4cd Q1 0.6t 2.5cd 3.0cd 2.7cd 2.9cd 2.9cd 2.2cd 2.4cd 2.7cd -*- Line up of S/V LEDs For Mobile Line-up High Brightness, Slim, Wide Color Gamut 2.0 cd 2.0cd 2.5cd 0.6t 0.4t 2.3cd 2.7cd 2.2cd 3.0cd 2.4 cd ?07 ?08 ?09 1.7cd ?10 Dimension Brightness IF = 20mA State MP schedule Min. Typ. 3.8×0.9×0.4 mm 1.4cd 2.0cd MP - 1.7cd 1.5cd(B) 2.2cd 2.0cd(B) U. Develop Jun. 09 t = 0.4 mm (1.0 ~ 2.2 cd) Dimension Brightness IF = 20mA State MP schedule Min. Typ. 3.8×1.0×0.6 mm 1.6cd 2.3cd MP - 2.0cd 1.9cd(B) 2.5cd 2.3cd(B) U. Develop DEC/08. t = 0.6 mm (High IV) (1.6 ~ 2.5 cd) -*- VOC 0.4t S/V Solution! High Brightness Reliability Slim Design A leading S/V LED solution for Slim mobile display - Slim PKG, High Brightness. LED (0.4t) 2.0cd Sep. „08 2.4cd Oct. „09 2.2cd Mar. „09 1.7cd Oct . „07 Brightness Over 2.0cd Life Time @ 25?, ~10K hr Slim PKG : 0.4t Development Status of 0.4T S/V LED Current status -*- Long, Stable Life time. @ 25?& 25mA, operation. ? Normal Operation Test ? High Humidity & High Temp. Operation Test @ 60? & 95%RH & 20mA, operation. Degradation rate of Luminous Intensity Degradation rate of Luminous Intensity Development Status of 0.4T S/V LED -*- Development Status of 0.6T S/V LED A leading S/V LED solution for Slim mobile display - High Brightness, Long Life time. LED (0.6t) 2.3cd May. „08 2.7cd Jun. „09 2.5cd Oct. „08 2.0cd Oct . „07 High Brightness Reliability Brightness Over 2.5cd Life Time @ 25?, ~15K hr Current status VOC 0.6t S/V Solution! Reform Soldering Pad. Redesign Lead frame. Development Status of 0.6T S/V LED Luminous Properties(472US) ; B3 : 2.3 cd, E rank : 2.5cd Current Properties Operation Voltage ; 3.0 ~ 3.8 V Approaching Technologies Redesign Lead frame ; Change Lead position. ; VOC of Customer ? Reducing the Soldering error in SMT process. ; Strategy of Development in SEMCO ? Applying „new design „ from 2.5cd 0.6T S/V LED. -*- 462US(Mass Product) 472US(Developing) Size 3.8×1.0×0.6t 3.8×1.0×0.6t 3D Appearance Land Position Radiation Angle Short Axis : 117 ? Long Axis : 118 ? Short Axis : 117 ? Long Axis : 118 ? IV (mcd) 1600 ~ 2400 2000 ~ 2700 Change of Foot Print Design Development Status of 0.6T S/V LED Details of „new PKG type? -*- Development Status of 0.6T S/V LED Long, Stable Life time. @ 25?& 30mA, operation. ? Normal Operation Test ? High Humidity & High Temp. Operation Test @ 60? & 95%RH & 25mA, operation. Degradation rate of Luminous Intensity Degradation rate of Luminous Intensity 制 造流程 EPI FAB PKG P-GaN InGaN N-GaN Al2O3 Insulating LED CHIP ? EPI 工艺 : 通过MOCVD 技术Epi-晶片活化层 (量子井) 的生长 ? FAG 工艺: 把EPI 晶片装配成芯片的过程 ? 封装工艺 : 应用的几种封装技术 ( Lamp, SMD, Side View, Top View etc) -*- Model Process 0.6T Zener Bonding Chip Bonding Wire Bonding Dispensing Trim Forming Side view 0.6t -*- Model Process BLU Chip Bonding Wire Bonding Dispensing Trim Forming Finished product 照明用 三星LED组织图 LED製品技術G 次長 崔俊義 LED品質革新G LED天津工厂 常務 金璨洙 LED製造G 次長 ?成軍 製造支援課 課長 高麗軍 S/V組立課 BLU組立課 課長 宋勝子 ??? ?? 課長 ?長靑 課長 ?維軍 (品質企劃) 課長 董文杰 ( 工程 路基工程安全技术交底工程项目施工成本控制工程量增项单年度零星工程技术标正投影法基本原理 品質) (外注品質) (顧客品質) 完 成 課 (生産管理) (製造革新) 經理 ? 晶 課長 陳 娜 工程技術課 次長 張 弘 三星LED 社长 金在旭 LED生 産企劃G