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首页 集成电路版图PCM.doc

集成电路版图PCM.doc

集成电路版图PCM.doc

上传者: 你de温柔面孔 2017-09-23 评分 0 0 0 0 0 0 暂无简介 简介 举报

简介:本文档为《集成电路版图PCMdoc》,可适用于工程科技领域,主题内容包含集成电路版图PCMTitle:SDPTMSTProcessPCMSpecificationVersion#:DTitle:SDPTMSTProces符等。

集成电路版图PCMTitle:SDPTMSTProcessPCMSpecificationVersion#:DTitle:SDPTMSTProcessPCMSpecificationPurpose:ToprovidegenericPCMspecificationforCSMCFABSDPTMSTScope:ThegenericPCMspecificationincludesthespecificationofalloptionaldevicesTheactualPCMspecificationofspecificproductwilldependsontheactualdevicesusedReference:CSMCQRACONTROLLEDNAVer#:DREFERENCEONLY(FORFAB)Definitions:REVISIONUNAVAILABLENAResponsibility:TDD(TechnologyDevelopmentDivision)responsefordocumentinitialTDDandPID(ProcessIntegrationDivision)responsefordocumentrevisionDocument#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inredTitle:SDPTMSTProcessPCMSpecificationVersion#:DProcessDescription:AVnormalMOSFETPCMspecification:LCLTYPUCLNoNAMEUNITSIZE(LXW)NOTE(testcondition)NTUBFResΩxSheetresistanceofNwellwithoutBNPbodyResΩSheetresistanceofPbodydiffusionxxPbaseARes,ΩSheetresistanceofPbasediffusion(qvnba)ΩxPbaseBRes,SheetresistanceofPbasediffusion(qhvnba)ΩxPbaseCRes,SheetresistanceofPbasediffusion(qhvnba)NRESΩxSheetresistanceofNdiffusionPRESΩxSheetresistanceofPdiffusionPZenerResΩxSheetresistanceofPzenerdiffusionNLDDRESΩxSheetresistanceofNLDDNMRESΩxSheetresistanceofNMPOLYRESΩxSheetresistanceofpolyLowTCPOLYΩxSheetresistanceofLowTcPolywithmetalcoveredRESMxHPOLYΩSheetresistanceofhighresistivitypoly,twodifferentRsoptionsRESM,xPOLYRESΩxSheetresistanceoflowresistivitypolyMRESΩxSheetresistanceofmetal,twodifferentRsoptionsMRES,ΩxMRESΩxSheetresistanceofmetal,twodifferentRsoptionsMRES,ΩxMRESΩxSheetresistanceofmetal,twodifferentRsoptionsMRES,ΩxPxRcallΩCNTxxAveragecontactresistanceofpolycontact,measuredfromcontactchainPxRcallΩCNTxxAveragecontactresistanceofpolycontact,measuredfromcontactchainAveragecontactresistanceofNdiffusioncontact,measuredfromcontactNxRcΩCNTxxchainPxRcΩCNTxxAveragecontactresistanceofPdiffusioncontact,measuredfromcontactDocument#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inredTitle:SDPTMSTProcessPCMSpecificationVersion#:DchainVIARESΩCNTxxContactresistanceofmetalvia,measuredfromviachainVIARESΩCNTxxContactresistanceofmetalvia,measuredfromviachainThresholdvoltageofVNchannelPolygatefieldMOSSweepVds=Vgs,NFOXXVtfVxVtf=VdsIds=uAThresholdvoltageofVPchannelPolygatefieldMOSSweepVds=Vgs,PFOXXVtfVxVtf=VdsIds=uAThresholdvoltageofVnormalNMOS,maximumGmextrapolationmethodNxVtVxSaturationcurrentofVnormalNMOS,measuredatVds=Vgs=VNxIonmAxOffcurrentofVnormalNMOS,Ioff=IdsVds=V,Vgs=VNxIoff(lg)LOG(A)xBreakdownvoltageofVnormalNMOS,Bvds=VdsIds=uA,Vgs=VNxBvdsgtVxThresholdvoltageofVnormalPMOS,maximumGmextrapolationmethodPxVtVxSaturationcurrentofVnormalPMOS,measuredatVds=Vgs=VPxIonmAxOffcurrentofVnormalPMOS,Ioff=IdsVds=V,Vgs=VPxIoff(lg)LOG(A)xBreakdownvoltageofVnormalPMOS,Bvds=VdsIds=uA,Vgs=VPxBvdsgtVxIntermetalisolationmonitorMCOMBLOG(A)WS=IntermetalisolationmonitorMCOMBLOG(A)WS=IntermetalisolationmonitorMCOMBLOG(A)WS=InterpolyisolationmonitorPOLYCOMBLOG(A)WS=InterpolyisolationmonitorPOLYCOMBLOG(A)WS=LVGateoxidethickness,calculatedfromaccumulativemodeMOScapacitanceTOXGoxPWANGSTA=,cmBreakdownvoltageofNwellLVgateoxide,measuredatIg=uABVGOXNWuAVA=,cmBreakdownvoltageofPwellLVgateoxide,measuredatIg=uABVGOXPWuAVA=,cmNote:,ThePbaseresistorarecorrespondingtothedifferentBJToption(qvnba,qhvnba,qhvnba),LowTcPolyresistanceisanoption,Hipolyresistanceisanoption,MMM(topmetal)thicknessisanoptionDocument#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inredTitle:SDPTMSTProcessPCMSpecificationVersion#:DBLDMOSProcessPCMspecificationVdsoperationvoltagev:NoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)ThresholdvoltageofthinGox,LDNMOS,maximumGmextrapolationmethodHNAATxVtVLxW=xSaturationcurrentofthinGox,asymmetryLDNMOS,Vgs=V,Vds=VHNAATxIonmALxW=xRdsonofLDNMOS,Vds=V,Vgs=VHNAATxRdsonLxW=xmΩmmBreakdownvoltageofLDNMOS,Bvds=VdsIds=uA,Vgs=VHNAATxBvdsgtVLxW=xThresholdvoltageofthinGox,LDNMOS,maximumGmextrapolationmethodIHNAAT*xVtVLxW=xSaturationcurrentofthinGox,asymmetryLDNMOS,Vgs=V,Vds=VIHNAATxIonmALxW=xRdsonofLDNMOS,Vds=V,Vgs=VIHNAATxRdsonLxW=xmΩmmBreakdownvoltageofLDNMOS,Bvds=VdsIds=uA,Vgs=VIHNAATxBvdsgtVLxW=xCLDMOSProcessPCMspecificationVdsoperationvoltagev:NoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)ThresholdvoltageofthinGox,LDNMOS,maximumGmextrapolationmethodHNABTxVtVLxW=xSaturationcurrentofthinGox,asymmetryLDNMOS,Vgs=V,Vds=VHNABTxIonmALxW=xRdsonofLDNMOS,Vds=V,Vgs=VHNABTxRdsonLxW=xmΩmmBreakdownvoltageofLDNMOS,Bvds=VdsIds=uA,Vgs=VHNABTxBvdsgtVLxW=xThresholdvoltageofthinGox,LDNMOS,maximumGmextrapolationmethodIHNABT*xVtVLxW=xSaturationcurrentofthinGox,asymmetryLDNMOS,Vgs=V,Vds=VIHNABTxIonmALxW=xRdsonofLDNMOS,Vds=V,Vgs=VIHNABTxRdsonLxW=xmΩmmBreakdownvoltageofLDNMOS,Bvds=VdsIds=uA,Vgs=VIHNABTxBvdsgtVLxW=xDLDMOSProcessPCMspecificationVdsoperationvoltagev:NoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)ThresholdvoltageofthinGox,LDNMOS,maximumGmextrapolationmethodHNACTxVtVLxW=xSaturationcurrentofthinGox,asymmetryLDNMOS,Vgs=V,Vds=VHNACTxIonmALxW=xRdsonofLDNMOS,Vds=V,Vgs=VHNACTxRdsonLxW=xmΩmmBreakdownvoltageofLDNMOS,Bvds=VdsIds=uA,Vgs=VHNACTxBvdsgtVLxW=xThresholdvoltageofthinGox,LDNMOS,maximumGmextrapolationmethodIHNACT*xVtVLxW=xDocument#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inredTitle:SDPTMSTProcessPCMSpecificationVersion#:DSaturationcurrentofthinGox,asymmetryLDNMOS,Vgs=V,Vds=VIHNACTxIonmALxW=xRdsonofLDNMOS,Vds=V,Vgs=VIHNACTxRdsonLxW=xmΩmmBreakdownvoltageofLDNMOS,Bvds=VdsIds=uA,Vgs=VIHNACTxBvdsgtVLxW=xELDMOSProcessPCMspecificationVdsoperationvoltagev:NoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)ThresholdvoltageofthinGox,LDNMOS,maximumGmextrapolationmethodHNADTxVtVLxW=xSaturationcurrentofthinGox,asymmetryLDNMOS,Vgs=V,Vds=VHNADTxIonmALxW=xRdsonofLDNMOS,Vds=V,Vgs=VHNADTxRdsonLxW=xmΩmmBreakdownvoltageofLDNMOS,Bvds=VdsIds=uA,Vgs=VHNADTxBvdsgtVLxW=xThresholdvoltageofthinGox,LDNMOS,maximumGmextrapolationmethodIHNADT*xVtVLxW=xSaturationcurrentofthinGox,asymmetryLDNMOS,Vgs=V,Vds=VIHNADTxIonmALxW=xRdsonofLDNMOS,Vds=V,Vgs=VIHNADTxRdsonLxW=xmΩmmBreakdownvoltageofLDNMOS,Bvds=VdsIds=uA,Vgs=VIHNADTxBvdsgtVLxW=xNote:*IHNAisisolatedasymmetricLDMOS,fifthterminalBNshouldbeconnectedwithterminaldrainsideFVasymmetricandsymmetricHVPMOSProcessPCMspecification:NoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)ThresholdvoltageofthinGox,asymmetryHVPMOS,maximumGmHPATxVtVLxW=xextrapolationmethodSaturationcurrentofthinGox,asymmetryHVPMOS,Vgs=V,Vds=VHPATxIonmALxW=xBreakdownvoltageofthinGox,asymmetryHVPMOS,Bvds=VdsIds=uA,Vgs=VHPATxBvdsgtVLxW=xThresholdvoltageofsymmetryHVPMOS,maximumGmextrapolationLxW=xHPSTxVtVmethodSaturationcurrentofsymmetryHVPMOS,Vgs=V,Vds=VHPSTxIonmALxW=xBreakdownvoltageofsymmetryHVPMOS,Bvds=VdsIds=uA,Vgs=VHPSTxBvdsgtVLxW=xBVHGOXBreakdownvoltageofHVgateoxide,measuredatIg=uAVA=,cmNepiuAHVGateoxidethickness,calculatedfromaccumulativemodeMOScapacitanceTOXHGOXNepiANGSTA=,cmGParasiticBipolarPCMspecification:Document#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inredTitle:SDPTMSTProcessPCMSpecificationVersion#:DNoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)VPNPHFENAEmitter=xCurrentgainofPNwellPsubparasiticBJTVPNPBVCEOVEmitter=xBVceoofPNwellPsubparasiticBJTLPNPHFENAEmitter=xCurrentgainIb=nAofPbodyNepiPbodyparasiticBJTLPNPBVCEOVEmitter=xBVceoofPbodyNepiPbodyparasiticBJTVNPNHFENAEmitter=xCurrentgainofNPbodyNepiparasiticBJTVNPNBVCEOVEmitter=xBVceoofNPbodyNepiparasiticBJTHHighperformanceBipolarPCMspecificationNote:VerticalNPbaseHNWhavethreeoptionsarecorrespondingtoqvnba,qhvnba,qhvnbadefinedinSDPTMSTProcessapplicationnoteNoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)VNPNAHFENACurrentgainofNPbaseHNwellparasiticBJT(qvnba)Emitter=xVNPNABVCEOVBVceoofNPbaseNNwellparasiticBJT(qvnba)Emitter=xVNPNBHFENAEmitter=xCurrentgainofNPbaseHNwellparasiticBJT(qhvnba)VNPNBBVCEOVEmitter=xBVceoofNPbaseNNwellparasiticBJT(qhvnba)VNPNCHFENAEmitter=xCurrentgainofNPbaseHNwellparasiticBJT(qhvnba)VNPNCBVCEOVEmitter=xBVceoofNPbaseNNwellparasiticBJT(qhvnba)IPIPcapacitorPCMSpecificationNote:PIPcapacitorhasthreeoptionsarecorrespondingtocpipv,cpipv,cpipvdefinedinSDPTMSTProcessapplicationnoteNoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)BVPPvVBreakdownvoltageofPIPcapacitor(cpipv)A=,cmCAPSPPvUnitcapacitanceofPIPcapacitor(cpipv)fFumA=,cmBVPPvVBreakdownvoltageofPIPcapacitor(cpipv)A=,cmCAPSPPvUnitcapacitanceofPIPcapacitor(cpipv)fFumA=,cmBVPPvVBreakdownvoltageofPIPcapacitor(cpipv)A=,cmCAPSPPvUnitcapacitanceofPIPcapacitor(cpipv)fFumA=,cmDocument#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inredTitle:SDPTMSTProcessPCMSpecificationVersion#:DJNJFETPCMspecificationSIZE(LXW)NoNAMEUNITLCLTYPUCLNOTE(testcondition)JFETPBVtVxThresholdvoltageofJFET(PbodyHNWBP),maximumGmextrapolationmethodJFETPBIonmAxSaturationcurrentofJFET(PbodyHNWBP),Vg=,Vd=V,Vs=JFETPBBVVxBreakdownvoltageofJFET(PbodyHNWBP),Vs=Vg=v,VdsweepBV=IguAJFETBAVtVxThresholdvoltageofJFET(PbaseHNWBP),maximumGmextrapolationmethodJFETBAIonmASaturationcurrentofJFET(PbaseHNWBP),Vg=,Vd=V,Vs=xJFETBABVVxBreakdownvoltageofJFET(PbaseHNWBP),Vs=Vg=v,VdsweepBV=IguANote:JFET(PbaseHNWBP):PbasedosagesametoqvnbaKJunctionPCMSpecificationNoNAMEUNITLCLTYPUCLSIZE(LXW)NOTE(testcondition)NPTUBBVVxBreakdownvoltageofNPwelljunctionPNTUBBVVxBreakdownvoltageofPNwelljunctionPHNWBVVxBreakdownvoltageofPHNWjunctionNPbodyBVVxBreakdownvoltageofNPbodyjunctionPbodyNepiBVVxBreakdownvoltageofPbodyNepijunctionVBreakdownvoltageofNPbasejunction(qvnba)NPbaseABVVBreakdownvoltageofNPbasejunction(qhvnba)NPbaseBBVxVBreakdownvoltageofNPbasejunction(qhvnba)NPbaseCBVNwellPwellBVVxBreakdownvoltageofNwelltoPwellallonBPjunction(LVrule)NwellPwellBVVxBreakdownvoltageofNwelltoPwellallonBPjunction(HVrule)HNwellHPwellBVVxBreakdownvoltageofHNwelltoHPwellallonBPjunctionNMPXBVVxBreakdownvoltageofNMtoHPwelljunctionwithGToverlapsNMZenerdiodeZrxZenervoltage(currentrangemA~mA)VZenerRzOhmxZenerdiodeimpendenceXSWxAVTVSchottkydiodethreshold(dswhnw)XSWxABVVSchottkydiodebreakdown(dswhnw)XSWxBVTVSchottkydiodethreshold(dswhnw)Document#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inredTitle:SDPTMSTProcessPCMSpecificationVersion#:DXSWxBBVVSchottkydiodebreakdown(dswhnw)NOTE:TheNPbaseBVarecorrespondingtothedifferentBJToption(qvnba,qhvnba,qhvnba)ThisisonlythepreliminaryPCMSPEC,becausethereisnotenoughdataforprocessdistributionThePCMSPCwillberevisedinthefutureDocument#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inredTitle:SDPTMSTProcessPCMSpecificationVersion#:DAppendices:NAEffectiveDate:ThisdocumentiseffectiveimmediatelyafterdistributionuptothedateofrevisedversionConfidentiality:ConfidentialModifyRecord:NAPageNumberModifyDateOldversionNewversionResponsibilityContentABJingjTuChangBCSuXChenChangCDSuXChenChangENDDocument#:WTDPAL()ConfidentialTheinformationcontainedhereinistheexclusivepropertyofCSMCandshallnotbedistributed,reproduced,ordisclosedinwholeorinpartwithoutpriorwrittenpermissionofCSMCElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromDocumentCenterPrintedversionsareuncontrolledexceptwhenstamped“DONOTCOPY”inred

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