BAV70_SER

BAV70 series High-speed switching diodes 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. 1.2 Features 1.3 Applications n High-speed switching n General-purpose switching 1.4 Quick reference data [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. Rev. 07 — 27 November 2007 Product data sheet Table 1. Product overview Type number Package Package configuration Configuration NXP JEITA JEDEC BAV70 SOT23 - TO-236AB small dual common cathode BAV70M SOT883 SC-101 - leadless ultra small dual common cathode BAV70S SOT363 SC-88 - very small quadruple common cathode/common cathode BAV70T SOT416 SC-75 - ultra small dual common cathode BAV70W SOT323 SC-70 - very small dual common cathode n High switching speed: trr ≤ 4 ns n Low capacitance: Cd ≤ 1.5 pF n Low leakage current n Reverse voltage: VR ≤ 100 V n Small SMD plastic packages Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IR reverse current VR = 80 V - - 0.5 µA VR reverse voltage - - 100 V trr reverse recovery time [1] - - 4 ns NXP Semiconductors BAV70 series High-speed switching diodes 2. Pinning information 3. Ordering information Table 3. Pinning Pin Description Simplified outline Symbol BAV70; BAV70T; BAV70W 1 anode (diode 1) 2 anode (diode 2) 3 common cathode BAV70M 1 anode (diode 1) 2 anode (diode 2) 3 common cathode BAV70S 1 anode (diode 1) 2 anode (diode 2) 3 common cathode (diode 3 and diode 4) 4 anode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1 and diode 2) 006aaa144 1 2 3 006aab034 1 3 2 3 1 2 Transparent top view 006aab034 1 3 2 1 32 456 006aab104 1 3 6 2 5 4 Table 4. Ordering information Type number Package Name Description Version BAV70 - plastic surface-mounted package; 3 leads SOT23 BAV70M SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 BAV70S SC-88 plastic surface-mounted package; 6 leads SOT363 BAV70T SC-75 plastic surface-mounted package; 3 leads SOT416 BAV70W SC-70 plastic surface-mounted package; 3 leads SOT323 BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 2 of 15 NXP Semiconductors BAV70 series High-speed switching diodes 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Marking codes Type number Marking code[1] BAV70 A4* BAV70M S4 BAV70S A4* BAV70T A4 BAV70W A4* Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current BAV70 Tamb ≤ 25 °C - 215 mA BAV70M Ts = 90 °C - 150 mA BAV70S Ts = 60 °C - 250 mA BAV70T Ts = 90 °C - 150 mA BAV70W Tamb ≤ 25 °C - 175 mA IFRM repetitive peak forward current BAV70 - 450 mA BAV70M - 500 mA BAV70S - 450 mA BAV70T - 500 mA BAV70W - 500 mA IFSM non-repetitive peak forward current square wave [1] tp = 1 µs - 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 3 of 15 NXP Semiconductors BAV70 series High-speed switching diodes [1] Tj = 25 °C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics Ptot total power dissipation [2] BAV70 Tamb ≤ 25 °C - 250 mW BAV70M Tamb ≤ 25 °C [3] - 250 mW BAV70S Ts = 60 °C - 350 mW BAV70T Ts = 90 °C - 170 mW BAV70W Tamb ≤ 25 °C - 200 mW Per device IF forward current BAV70 Tamb ≤ 25 °C - 125 mA BAV70M Ts = 90 °C - 75 mA BAV70S Ts = 60 °C - 100 mA BAV70T Ts = 90 °C - 75 mA BAV70W Tamb ≤ 25 °C - 100 mA Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per diode Rth(j-a) thermal resistance from junction to ambient in free air [1] BAV70 - - 500 K/W BAV70M [2] - - 500 K/W BAV70W - - 625 K/W Rth(j-t) thermal resistance from junction to tie-point BAV70 - - 360 K/W BAV70W - - 300 K/W Rth(j-sp) thermal resistance from junction to solder point BAV70S - - 255 K/W BAV70T - - 350 K/W BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 4 of 15 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. NXP Semiconductors BAV70 series High-speed switching diodes 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr = 20 ns. Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage [1] IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V IF = 150 mA - - 1.25 V IR reverse current VR = 25 V - - 30 nA VR = 80 V - - 0.5 µA VR = 25 V; Tj = 150 °C - - 30 µA VR = 80 V; Tj = 150 °C - - 100 µA Cd diode capacitance VR = 0 V; f = 1 MHz - - 1.5 pF trr reverse recovery time [2] - - 4 ns VFR forward recovery voltage [3] - - 1.75 V BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 5 of 15 NXP Semiconductors BAV70 series High-speed switching diodes (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Based on square wave currents. Tj = 25 °C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C f = 1 MHz; Tamb = 25 °C Fig 3. Reverse current as a function of reverse voltage; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values 006aab107 VF (V) 0.2 1.41.00.6 1 10 102 103 IF (mA) 10 - 1 (1) (2) (3) (4) mbg704 10 1 102 IFSM (A) 10−1 tp (µs) 1 10410310 102 006aab108 10 - 2 10 - 4 10 - 3 10 1 10- 1 102 IR (m A) 10- 5 VR (V) 0 1008040 6020 (1) (2) (3) (4) 0 8 16124 0.8 0.6 0 0.4 0.2 mbg446 VR (V) Cd (pF) BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 6 of 15 NXP Semiconductors BAV70 series High-speed switching diodes 8. Test information (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 %VR input signal V = VR + IF · RS RS = 50 W IF D.U.T. Ri = 50 W SAMPLING OSCILLOSCOPE mga881 tr t tp 10 % 90 % I input signal RS = 50 Ω I Ri = 50 Ω OSCILLOSCOPE 1 kΩ 450 Ω D.U.T. mga882 VFR t output signal V BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 7 of 15 NXP Semiconductors BAV70 series High-speed switching diodes 9. Package outline Fig 7. Package outline BAV70 (SOT23/TO-236AB) Fig 8. Package outline BAV70M (SOT883/SC-101) Fig 9. Package outline BAV70S (SOT363/SC-88) Fig 10. Package outline BAV70T (SOT416/SC-75) 04-11-04Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 1 2 3 03-04-03Dimensions in mm 0.62 0.55 0.55 0.47 0.50 0.46 0.65 0.20 0.12 3 2 1 0.30 0.22 0.30 0.22 1.02 0.95 0.35 06-03-16Dimensions in mm 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 1 32 46 5 04-11-04Dimensions in mm 0.95 0.60 1.8 1.4 1.75 1.45 0.9 0.7 0.25 0.10 1 0.30 0.15 1 2 3 0.45 0.15 04-11-04Dimensions in mm 0.45 0.15 1.1 0.8 2.2 1.8 2.2 2.0 1.35 1.15 1.3 0.4 0.3 0.25 0.10 1 2 3 BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 8 of 15 Fig 11. Package outline BAV70W (SOT323/SC-70) NXP Semiconductors BAV70 series High-speed switching diodes 10. Packing information [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping 11. Soldering Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 BAV70 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 BAV70M SOT883 2 mm pitch, 8 mm tape and reel - -315 BAV70S SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 BAV70T SOT416 4 mm pitch, 8 mm tape and reel -115 -135 BAV70W SOT323 4 mm pitch, 8 mm tape and reel -115 -135 Fig 12. Reflow soldering footprint BAV70 (SOT23/TO-236AB) solder resist occupied area solder lands solder paste Dimensions in mm sot023 1.00 0.60 (3x) 1.30 12 3 2.50 3.00 0.85 2.70 2.90 0.50 (3x) 0.60 (3x) 3.30 0.85 BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 9 of 15 NXP Semiconductors BAV70 series High-speed switching diodes Fig 13. Wave soldering footprint BAV70 (SOT23/TO-236AB) Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint BAV70M (SOT883/SC-101) sot023 4.004.60 2.80 4.50 1.20 3.40 3 2 1 1.20 (2x) preferred transport direction during soldering Dimensions in mm solder resist occupied area solder lands solder lands solder paste solder resist occupied area Dimensions in mm 1.30 0.30R = 0.05 (12 · ) R = 0.05 (12· ) 0.60 0.70 0.800.90 0.30 (2 · ) 0.35 (2 · ) 0.20 0.40 (2 · ) 0.50 (2 · ) 0.25 (2 · ) 0.30 0.40 0.50 BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 10 of 15 NXP Semiconductors BAV70 series High-speed switching diodes Fig 15. Reflow soldering footprint BAV70S (SOT363/SC-88) Fig 16. Wave soldering footprint BAV70S (SOT363/SC-88) sot363 1.20 2.40 0.50 (4 · ) 0.40 (2 · ) 0.90 2.10 0.50 (4 · ) 0.60 (2 · ) 2.35 2.65 solder lands solder resist occupied area solder paste Dimensions in mm solder lands solder resist occupied area 1.15 3.75 transport direction during soldering 1.000.30 4.004.50 5.25 sot363Dimensions in mm BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 11 of 15 NXP Semiconductors BAV70 series High-speed switching diodes Fig 17. Reflow soldering footprint BAV70T (SOT416/SC-75) Fig 18. Reflow soldering footprint BAV70W (SOT323/SC-70) Fig 19. Wave soldering footprint BAV70W (SOT323/SC-70) solder resist occupied area solder lands solder pasteDimensions in mm msa438 2.0 0.6 (3x) 0.7 1.5 1 2 3 1.1 2.2 0.5 (3x) 0.85 0.6 1.9 msa429 0.852.35 0.55 (3· ) 1.3250.75 2.40 2.65 1.30 3 2 1 0.60 (3· ) 0.50 (3· ) 1.90 solder lands solder resist occupied area solder paste Dimensions in mm msa419 4.00 4.60 2.103.65 1.15 2.70 3 2 1 0.90(2· ) preferred transport direction during soldering solder lands solder resist occupied area Dimensions in mm BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 12 of 15 NXP Semiconductors BAV70 series High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAV70_SER_7 20071127 Product data sheet - BAV70_6 BAV70S_2 BAV70T_3 BAV70W_6 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BAV70M added • Section 1.1 “General description”: amended • Table 1 “Product overview”: added • Table 2 “Quick reference data”: added • Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VRRM maximum value from 85 V to 100 V • Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VR maximum value from 75 V to 100 V • Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of IR condition VR from 75 V to 80 V for Tj = 25 °C • Table 8 “Characteristics”: for BAV70, BAV70S and BAV70W change of IR maximum value from 2.5 µA to 0.5 µA for Tj = 25 °C • Table 8 “Characteristics”: for BAV70T change of IR maximum value from 2.0 µA to 0.5 µA for Tj = 25 °C • Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of IR maximum value from 60 µA to 30 µA for IR condition VR = 25 V; Tj = 150 °C • Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of IR condition VR from 75 V to 80 V for Tj = 150 °C • Section 8 “Test information”: added • Section 10 “Packing information”: added • Section 11 “Soldering”: added • Section 13 “Legal information”: updated BAV70_6 20020403 Product specification - BAV70_5 BAV70S_2 19971021 Product specification - BAV70S_1 BAV70T_3 20040204 Product specification - BAV70T_2 BAV70W_6 20020405 Product specification - BAV70W_5 BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 13 of 15 NXP Semiconductors BAV70 series High-speed switching diodes 13. Legal information 13.1 Data sheet status [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 14 of 15 NXP Semiconductors BAV70 series High-speed switching diodes 15. Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision