ina129-ht

? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? R V- G IN V+ IN V- V+ V O Ref 1 2 3 4 8 7 6 5 R G D, JD OR HKJ PACKAGE (TOP VIEW) 8 5 4 1 HKQ as formed or HKJ mounted dead bug HKQ PACKAGE (TOP VIEW) RG V- IN V+IN V- V+ VO Ref RG INA128-HT, INA129-HT www.ti.com SBOS501C –JANUARY 2010–REVISED APRIL 2012 PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS Check for Samples: INA128-HT, INA129-HT 1FEATURES (1) SUPPORTS EXTREME TEMPERATURE APPLICATIONS • Low Offset Voltage • Controlled Baseline• Low Input Bias Current: 50 nA Typ • One Assembly/Test Site• High CMR: 95 dB Typ • One Fabrication Site• Inputs Protected to ±40 V • Available in Extreme (–55°C/210°C)• Wide Supply Range: ±2.25 V to ±18 V Temperature Range (2) • Low Quiescent Current: 2 mA Typ • Extended Product Life Cycle APPLICATIONS • Extended Product-Change Notification • Product Traceability• Bridge Amplifier • Texas Instruments' high temperature products• Thermocouple Amplifier utilize highly optimized silicon (die) solutions • RTD Sensor Amplifier with design and process enhancements to • Medical Instrumentation maximize performance over extended • Data Acquisition temperatures. (1) Typical values for 210°C application (2) Custom temperature ranges available DESCRIPTION The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy. The versatile three operational amplifier design and small size make them ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain. A single external resistor sets any gain from 1 to 10,000. The INA128 provides an industry-standard gain equation; the INA129 gain equation is compatible with the AD620. The INA128/INA129 is laser trimmed for very low offset voltage (50 μV) and high common-mode rejection (93 dB at G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current of 2 mA - typically. Internal input protection can withstand up to ±40 V without damage. The INA129 is available in 8-pin ceramic DIP and 8-pin ceramic surface-mount packages, specified for the –55°C to 210°C temperature range. The INA128 is available in an 8-pin SO-8 surface-mount package, specified for the –55°C to 175°C temperature range. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2010–2012, Texas Instruments IncorporatedProducts conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? A1 A2 A3 40 kW40 kW 40 kW40 kW VIN 2 1 8 3 6 5 VIN RG V+ V- Ref VO G = 1 + 49.4 kW RG + 4 7 INA128, INA129 Over-Voltage Protection Over-Voltage Protection - 25 kW (1) 25 kW (1) NOTE: (1) INA129: 24.7 kW G = 1 + 50 kW RG INA128: INA129: a b c d Origin INA128-HT, INA129-HT SBOS501C –JANUARY 2010–REVISED APRIL 2012 www.ti.com ORDERING INFORMATION TA PACKAGE ORDERABLE PART NUMBER TOP-SIDE MARKING HKJ INA129SHKJ INA129SHKJ HKQ INA129SHKQ INA129SHKQ –55°C to 210°C KGD INA129SKGD1 NA JD INA129SJD INA129SJD –55°C to 175°C D INA128HD 128HD BARE DIE INFORMATION BACKSIDE BOND PADDIE THICKNESS BACKSIDE FINISH POTENTIAL METALLIZATION COMPOSITION 15 mils Silicon with backgrind GND Al-Si-Cu (0.5%) 2 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? P A D # 1 NC V- IN V+ IN V- Ref V O V+ NCRG RGRG RG INA128-HT, INA129-HT www.ti.com SBOS501C –JANUARY 2010–REVISED APRIL 2012 Table 1. Bond Pad Coordinates in Microns DISCRIPTION PAD NUMBER a b c d NC 1 -57.4 -31.1 -53.3 -27 V-IN 2 -9.85 -31.4 -5.75 -27.3 V+IN 3 25.05 -31.4 29.15 -27.3 V- 4 56.2 -34.3 60.3 -30.2 Ref 5 53.75 -17.6 57.85 -11 VO 6 50.35 27.8 56.95 31.9 V+ 7 7.75 30.2 11.85 34.3 NC 8 -57.4 28.4 -53.3 32.5 RG 9 -57.4 13.4 -53.3 20 RG 10 -57.5 2.7 -53.4 9.3 RG 11 -57.5 -7.9 -53.4 -1.3 RG 12 -57.4 -18.6 -53.3 -12 Copyright © 2010–2012, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? INA128-HT, INA129-HT SBOS501C –JANUARY 2010–REVISED APRIL 2012 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE UNIT VS Supply voltage ±18 V Analog input voltage range ±40 V Output short-circuit (to ground) Continuous HKJ, HKQ, KGD and JD –55 to 210packagesTA Operating temperature °C D package –55 to 175 HKJ, HKQ, KGD and JD –55 to 210packagesTSTG Storage temperature range °C D package –55 to 175 Lead temperature (soldering, 10s) 300 °C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. THERMAL CHARACTERISTICS FOR HKJ OR HKQ PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER MIN TYP MAX UNIT to ceramic side of case 5.7 θJC Junction-to-case thermal resistance °C/Wto top of case lid (metal side of case) 13.7 ELECTRICAL CHARACTERISTICS FOR INA128 TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted) TA = –55°C to 125°C TA = 175°C (1)TESTPARAMETER UNITCONDITIONS MIN TYP MAX MIN TYP MAX INPUT OFFSET VOLTAGE, RTI ±25 ±125Initial TA = 25°C µV±100/G ±1000/G ±0.2 ±1 ±3.5 vs temperature TA = TMIN to TMAX µV/°C±5/G ±20/G ±80/G VS = ±2.25 V to ±2 ±5vs power supply µV/V ±18 V ±200/G ±500/G Long-term stability ±1 ±3/G ±1 ±3/G µV/mo Impedance, differential 1010 || 2 1010 || 2 Ω || pF Common mode 1011||9 1011||9 Ω || pF Common mode voltage VO = 0 V (V+) − 2 (V+) − 1.4 (V+) − 2 (V+) − 1.4 Vrange (2) (V−) + 2 (V−) + 1.7 (V−) + 2 (V−) + 1.7 V Safe input voltage ±40 ±40 V VCM = ±13 V, ΔRS = 1 kΩ G = 1 58 86 58 75 Common-mode rejection G = 10 78 106 78 85 dB G = 100 99 125 99 110 G = 1000 113 130 113 120 (1) Minimum and maximum parameters are characterized for operation at TA = 175°C, but may not be production tested at that temperature. Production test limits with statistical guardbands are used to ensure high temperature performance. (2) Input common-mode range varies with output voltage — see typical curves. 4 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? INA128-HT, INA129-HT www.ti.com SBOS501C –JANUARY 2010–REVISED APRIL 2012 ELECTRICAL CHARACTERISTICS FOR INA128 (continued) TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted) TA = –55°C to 125°C TA = 175°C (1)TESTPARAMETER UNITCONDITIONS MIN TYP MAX MIN TYP MAX CURRENT Bias current ±2 ±10 ±45 nA vs temperature ±30 ±550 pA/°C Offset Current ±1 ±10 ±45 nA vs temperature ±30 ±550 pA/°C NOISE G = 1000,Noise voltage, RTI RS = 0 Ω f = 10 Hz 10 10 nV/√Hz f = 100 Hz 8 8 nV/√Hz f = 1 kHz 8 8 nV/√Hz fB = 0.1 Hz to 10 Hz 0.2 0.8 µVPP Noise current f = 10 Hz 0.9 pA/√Hz f = 1 kHz 0.3 pA/√Hz fB = 0.1 Hz to 10 Hz 30 pAPP GAIN 1 + 1 +Gain equation V/V(50 kΩ/RG) (50 kΩ/RG) Range of gain 1 10000 1 10000 V/V G = 1 ±0.01 ±0.1 ±0.1 ±0.5 G = 10 ±0.02 ±0.5 ±0.5 ±1 Gain error % G = 100 ±0.05 ±0.7 ±0.7 ±1.5 G = 1000 ±0.5 ±2.5 ±2 ±4 Gain vs temperature (3) G = 1 ±1 ±10 ±75 ppm/°C 50-kΩ resistance (3) (4) ±25 ±100 ±75 ppm/°C VO = ±13.6 V, ±0.0001 ±0.001 ±0.008G = 1 % ofG = 10 ±0.0003 ±0.002 ±0.010Nonlinearity FSR G = 100 ±0.0005 ±0.002 ±0.010 G = 1000 ±0.001 See (5) ±0.6 See (5) OUTPUT Positive RL = 10kΩ (V+) − 1.4 (V+) − 0.9 (V+) − 1.4 (V+) − 0.9Voltage V Negative RL = 10kΩ (V−) + 1.4 (V−) + 0.8 (V−) + 1.4 (V−) + 0.8 Load capacitance stability 1000 1000 pF Short-curcuit current +6/−15 +6/−15 mA FREQUENCY RESPONSE G = 1 1300 1100 G = 10 700 700 Bandwidth, −3 dB kHz G = 100 200 190 G = 1000 20 17.5 VO = ±10 V,Slew rate 4 4 V/µsG = 10 (3) Specified by wafer test. (4) Temperature coefficient of the 50-kΩ term in the gain equation. (5) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%. Copyright © 2010–2012, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? INA128-HT, INA129-HT SBOS501C –JANUARY 2010–REVISED APRIL 2012 www.ti.com ELECTRICAL CHARACTERISTICS FOR INA128 (continued) TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted) TA = –55°C to 125°C TA = 175°C (1)TESTPARAMETER UNITCONDITIONS MIN TYP MAX MIN TYP MAX G = 1 7 7 G = 10 7 7 Settling time, 0.01% µs G = 100 9 9 G = 1000 80 80 Overload recovery 50% overdrive 4 4 µs POWER SUPPLY Voltage range ±2.25 ±15 ±18 ±2.25 ±15 ±18 V Current, total VIN = 0 V ±0.7 ±1 ±1 mA TEMPERATURE RANGE Specification −55 125 175 °C Operating −55 125 175 °C ELECTRICAL CHARACTERISTICS FOR INA129 over operating free-air temperature range (unless otherwise noted) TA = –55°C to 125°C TA = 210°C (1)TESTPARAMETER UNITCONDITIONS MIN TYP MAX MIN TYP MAX INPUT OFFSET VOLTAGE, RTI ±25 ±125Initial TA = 25°C µV±100/G ±1000/G ±0.2 ±1 ±1 vs temperature TA = TMIN to TMAX µV/°C±5/G ±20/G ±850/G VS = ±2.25 V to ±0.2 ±2 ±20vs power supply µV/V ±18 V ±20/G ±200/G ±1000/G Long-term stability ±1 ±3/G ±1 ±3/G µV/mo Impedance, differential 1010 || 2 1010 || 2 Ω || pF Common mode 1011||9 1011||9 Ω || pF Common mode voltage VO = 0 V (V+) − 2 (V+) − 1.4 (V+) − 2 (V+) − 1.4 Vrange (2) (V−) + 2 (V−) + 1.7 (V−) + 2 (V−) + 1.7 V Safe input voltage ±40 ±40 V VCM = ±13 V, ΔRS = 1 kΩ G = 1 58 86 53 Common-mode rejection G = 10 78 106 69 dB G = 100 99 125 89 G = 1000 113 130 95 CURRENT Bias current ±2 ±10 ±50 nA vs temperature ±30 ±600 pA/°C Offset Current ±1 ±10 ±50 nA vs temperature ±30 ±600 pA/°C (1) Minimum and maximum parameters are characterized for operation at TA = 210°C, but may not be production tested at that temperature. Production test limits with statistical guardbands are used to ensure high temperature performance. (2) Input common-mode range varies with output voltage — see typical curves. 6 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? INA128-HT, INA129-HT www.ti.com SBOS501C –JANUARY 2010–REVISED APRIL 2012 ELECTRICAL CHARACTERISTICS FOR INA129 (continued) over operating free-air temperature range (unless otherwise noted) TA = –55°C to 125°C TA = 210°C (1)TESTPARAMETER UNITCONDITIONS MIN TYP MAX MIN TYP MAX NOISE G = 1000,Noise voltage, RTI RS = 0 Ω f = 10 Hz 10 25 nV/√Hz f = 100 Hz 8 20 nV/√Hz f = 1 kHz 8 20 nV/√Hz fB = 0.1 Hz to 10 Hz 0.2 2 µVPP Noise current f = 10 Hz 0.9 pA/√Hz f = 1 kHz 0.3 pA/√Hz fB = 0.1 Hz to 10 Hz 30 pAPP GAIN 1 + 1 +Gain equation V/V(49.4 kΩ/RG) (49.4 kΩ/RG) Range of gain 1 10000 1 10000 V/V G = 1 ±0.01 ±0.1 ±1.1 G = 10 ±0.02 ±0.5 ±2.6 Gain error % G = 100 ±0.05 ±0.7 ±13.5 G = 1000 ±0.5 ±2 ±65.5 Gain vs temperature (3) G = 1 ±1 ±10 ±100 ppm/°C 49.4-kΩ resistance (3) (4) ±25 ±100 ±100 ppm/°C VO = ±13.6 V, ±0.0001 ±0.001 ±0.1G = 1 % ofG = 10 ±0.0003 ±0.002 ±0.2Nonlinearity FSR G = 100 ±0.0005 ±0.002 ±0.7 G = 1000 ±0.001 See (5) ±2.4 See (5) OUTPUT Positive RL = 10kΩ (V+) − 1.4 (V+) − 0.9 (V+) − 1.4 (V+) − 0.9Voltage V Negative RL = 10kΩ (V−) + 1.4 (V−) + 0.8 (V−) + 1.4 (V−) + 0.8 Load capacitance stability 1000 1000 pF Short-curcuit current +6/−15 +12/−5 mA FREQUENCY RESPONSE G = 1 1300 850 G = 10 700 400 Bandwidth, −3 dB kHz G = 100 200 50 G = 1000 20 7.5 VO = ±10 V,Slew rate 4 4 V/µsG = 10 G = 1 7 10 G = 10 7 10 Settling time, 0.01% µs G = 100 9 30 G = 1000 80 150 Overload recovery 50% overdrive 4 4 µs (3) Specified by wafer test. (4) Temperature coefficient of the 49.4-kΩ term in the gain equation. (5) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%. Copyright © 2010–2012, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? 1000 10000 100000 1000000 110 120 130 140 150 160 170 180 190 200 210 Continuous TJ (°C) E s ti m a te d L if e (H o u rs ) Electromigration Fail Mode Wirebond Failure Mode INA128-HT, INA129-HT SBOS501C –JANUARY 2010–REVISED APRIL 2012 www.ti.com ELECTRICAL CHARACTERISTICS FOR INA129 (continued) over operating free-air temperature range (unless otherwise noted) TA = –55°C to 125°C TA = 210°C (1)TESTPARAMETER UNITCONDITIONS MIN TYP MAX MIN TYP MAX POWER SUPPLY Voltage range ±2.25 ±15 ±18 ±2.25 ±15 ±18 V Current, total VIN = 0 V ±0.7 ±0.75 ±2 mA TEMPERATURE RANGE Specification −55 125 210 °C Operating −55 125 210 °C (1) See the data sheet for absolute maximum and minimum recommended operating conditions. (2) The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the dominant failure mechanism affecting device wearout for the specific device process and design characterisitics. (3) Wirebond lifetime is only applicable for D package. Figure 1. INA128HD/INA129SKGD1 Operating Life Derating Chart 8 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? − 60 50 40 30 20 10 0 10 20 G a in (d B ) Frequency (Hz) 1k G = 100V/V G = 10V/V G = 1V/V G = 1000V/V − 10k 100k 1M 10M Frequency (Hz) C o m m o n -M o d e R e je c ti o n ( d B ) 10 140 120 100 80 60 40 20 0 100k G =1V/V G =10V/V G =100V/V G =1000V/V 100 1k 10k 1M Frequency (Hz) P o w e r S u p p ly R e je c ti o n ( d B ) 140 120 100 80 60 40 20 0 10 G =100V/V G =1000V/V G=1V/V G= 10V/V 100k100 1k 10k 1M Frequency (Hz) P o w e r S u p p ly R e je c ti o n ( d B ) 140 120 100 80 60 40 20 0 10 G =100V/V G = 1000V/V G=1V/V G=10V/V INA128-HT, INA129-HT www.ti.com SBOS501C –JANUARY 2010–REVISED APRIL 2012 TYPICAL CHARACTERISTICS At TA = 25°C, VS = ±15 V, unless otherwise noted. GAIN COMMON-MODE REJECTION vs vs FREQUENCY FREQUENCY Figure 2. Figure 3. POSITIVE POWER SUPPLY REJECTION NEGATIVE POWER SUPPLY REJECTION vs vs FREQUENCY FREQUENCY Figure 4. Figure 5. Copyright © 2010–2012, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? Output Voltage (V) C o m m o n -M o d e V o lt a g e ( V ) 5 4 3 2 1 0 0 G=1 G=1 G ≥ 10 G ≥ 10 G ≥ 10 G=1 1 2 3 4 5 -1-2-3-4-5 VS = ±2.5V VS = ±5V 1 2 3 4 5 Output Voltage (V) C o m m o n -M o d e V o lt a g e ( V ) 0 15 10 5 0 10 G=1 G = 1 G ≥ 10 G ≥ 10 VD/2 + + VCM V V O D/2 Ref -15V +15V -10-15 5 10 15 -5 5 15 Gain (V/V) S e tt li n g T im e (m s ) 100 10 1 0.01% 0.1% 1 10 100 1000 Frequency (Hz) 1 10 100 1k 100 10 1 10k G = 1V / V G =10V/V 100 10 1 0.1 Current Noise G =100, 1000V/V In p u t B ia s C u rr e n t N o is e (p A /√ H z) In p u t- R e fe rr e d V o lt a g e N o is e (n V /√ H z ) ¾ ¾ 1k INA128-HT, INA129-HT SBOS501C –JANUARY 2010–REVISED APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. INPUT COMMON-MODE RANGE INPUT COMMON-MODE RANGE vs vs OUTPUT VOLTAGE OUTPUT VOLTAGE (VS = ±15 V) (VS = ±5 V, ±2.5 V) Figure 6. Figure 7. INPUT-REFERRED NOISE SETTLING TIME vs vs FREQUENCY GAIN Figure 8. Figure 9. 10 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? 0 0.5 1 1.5 2 2.5 -55 -25 0 25 50 75 100 125 155 190 210 Temperature (°C) Q u ie s c e n t C u rr e n t (m A ) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 S le w R a te (V /µ S ) Slew Rate IQ 5 4 3 2 1 0 In p u t C u rr e n t (m A ) Input Voltage (V) G = 1 V / V G = 1V / V G = 1000V/V G = 1000V/V VIN IIN +15V Flat region represents normal linear operation. 1 2 3 4 5 -50 15V -40 -30 -20 -10 0 10 20 30 40 50 -2 3 8 13 18 23 28 33 -50 -25 0 25 50 75 100 125 150 190 210 Temperature (°C) In p u t B ia s C u rr e n t (n A ) I OS I B 10 8 6 4 2 0 0 100 200 300 400 500 -2 -4 -6 -8 -10 Time (ms) O ff s e t V o lt a g e C h a n g e (m V ) INA128-HT, INA129-HT www.ti.com SBOS501C –JANUARY 2010–REVISED APRIL 2012 TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. QUIESCENT CURRENT AND SLEW RATE vs TEMPERATURE INPUT OVER-VOLTAGE V/I CHARACTERISTICS Figure 10. Figure 11. INPUT BIAS CURRENT vs INPUT OFFSET VOLTAGE WARM-UP TEMPERATURE Figure 12. Figure 13. Copyright © 2010–2012, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? (V-)+1.2 (V-) (V+) 0 1 2 3 4 Output Current (mA) O u tp u t V o lt a g e ( V ) (V+)-0.4 (V+)-0.8 (V+)-1.2 (V-)+0.8 (V-)+0.4 (V-)+1.2 (V-) (V+) (V+)-0.4 (V+)-0.8 (V+)-1.2 (V-)+0.8 (V-)+0.4 Power Supply Voltage (V) RL = 10 kΩ -40 °C +85 C° +25 C° -40 °C +85 C° -40 °C +25 C° +85 C° 0 5 10 15 20 O u tp u t V o lt a g e S w in g ( V ) 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 190 210 Temperature (°C) S h o rt -C ir c u it C u rr e n t (m A ) -I SC +I SC Frequency (Hz) P e a k -t o -P e a k O u tp u t V o lt a g e ( V ) P P 30 25 20 15 10 5 0 1k G = 1 G =10, 100 G = 1000 10k 100k 1M INA128-HT, INA129-HT SBOS501C –JANUARY 2010–REVISED APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. OUTPUT VOLTAGE SWING OUTPUT VOLTAGE SWING vs vs OUTPUT CURRENT POWER SUPPLY VOLTAGE Figure 14. Figure 15. SHORT-CIRCUIT OUTPUT CURRENT MAXIMUM OUTPUT VOLTAGE vs vs TEMPERATURE FREQUENCY Figure 16. Figure 17. 12 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0755-82916832 ? ? ? ? ? ? ? ? ? ? ? ? ? G = 1 20mV/div G = 10 5 s/divm Frequency (Hz) T H D + N (% ) 100 1k 1 0.1 0.01 0.001 100k VO = 1 V r m s G = 1 RL = 100kW G =100, R = 100kL W 500kHz Measurement Bandwidth Dashed Portion is noise limited. 10k G =1, R = 100kL W R = 10kL W G =10V/V G = 1 5V/div G = 10 5 s/divm G = 10 0 20mV/div G = 10 0 0 20 s/divm 5V/div G =1000 20 s/divm G =100 1s/div 0.1 V/divm INA128-HT, INA129-HT www.ti.com SBOS501C –JANUARY 2010–REVISED APRIL 2012 TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. TOTAL HARMONIC DISTORTION + NOISE vs SMALL SIGNAL FREQUENCY (G = 1, 10) Figure 18. Figure 19. SMALL SIGNAL LARGE SIGNAL (G = 100, 1000) (G = 1, 10) Figure 20. Figure 21. L