4n32

Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.2, 15-Feb-11 1 Optocoupler, Photodarlington Output, High Gain, with Base Connection 4N32, 4N33 Vishay Semiconductors DESCRIPTION The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. FEATURES • Very high current transfer ratio, 500 % min. • High isolation resistance, 1011  typical • Standard plastic DIP package • Compliant to RoHS Directive to 2002/95/EC and in accordance WEEE 2002/96/EC AGENCY APPROVALS • UL1577, file no. E52744 system code H • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 (pending), avialable with option 1 • BSI IEC60950; IEC60065 • FIMKO Notes • Additional options may be possible, please contact sales office. (1) Also available in tubes, do not put T on the end. i179005_1 1 2 3 6 5 4 B C E A C NC VD E i179005 ORDERING INFORMATION 4 N 3 # - X 0 # # T PART NUMBER PACKAGE OPTION TAPE AND REEL AGENCY CERTIFIED/PACKAGE CTR (%) UL, BSI, FIMKO  500  500 DIP-6 4N32 4N33 DIP-6, 400 mil, option 6 4N32-X006 - SMD-6, option 7 4N32-X007T (1) 4N33-X007T (1) SMD-6, option 9 4N32-X009T (1) 4N33-X009T (1) VDE, UL, BSI, FIMKO  500  500 DIP-6 4N32-X001 4N33-X001 SMD-6, option 7 4N32-X017T 4N33-X017T (1) > 0.1 mm 10.16 mm > 0.7 mm 7.62 mm DIP Option 7 Option 6 Option 9 www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81865 2 Rev. 1.2, 15-Feb-11 4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Notes • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Indicates JEDEC registered values. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 3 V Forward current IF 60 mA Power dissipation Pdiss 100 mW Derate linearly from 55 °C 1.33 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter base breakdown voltage BVEBO 8 V Collector base breakdown voltage BVCBO 50 V Emitter collector breakdown voltage BVECO 5 V Collector (load) current IC 100 mA Power dissipation Pdiss 150 mW Derate linearly 2 mW/°C COUPLER Total dissipation Ptot 250 mW Derate linearly 3.3 mW/°C Isolation test voltage (between emitter 1 s VISO 5300 VRMS Leakage path 7 mm min. Air path 7 mm min. Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012  VIO = 500 V, Tamb = 100 °C RIO  1011  Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time (1) at 260 °C 10 s ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF 1.25 1.5 V Reverse current VR = 3 V IR 0.1 100 μA Capacitance VR = 0 V CO 25 pF OUTPUT Collector emitter breakdown voltage (1) IC = 100 μA, IF = 0 BVCEO 30 V Collector base breakdown voltage (1) IC = 100 μA, IF = 0 BVCBO 50 V Emitter base breakdown voltage (1) IC = 100 μA, IF = 0 BVEBO 8 V Emitter collector breakdown voltage (1) IC = 100 μA, IF = 0 BVECO 5 10 V Collector emitter leakage current VCE = 10 V, IF = 0 ICEO 1 100 nA IC = 0.5 mA, VCE = 5 V hFE 13 COUPLER Collector emitter saturation voltage VCEsat 1 V Coupling capacitance 1.5 pF Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.2, 15-Feb-11 3 4N32, 4N33 Optocoupler, Photodarlington Output, High Gain, with Base Connection Vishay Semiconductors Note • As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter Current vs. LED Current CURRENT TRANSFER RATIO PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Current transfer ratio VCE = 10 V, IF = 10 mA CTR 500 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time VCC = 10 V, IC = 50 mA ton 5 μs Turn-off time IF = 200 mA, RL = 180  toff 100 μs SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part 1) 55/100/21 Comparative tracking index CTI 175 399 VIOTM 8000 V VIORM 890 V PSO 700 mW ISI 400 mA TSI 175 °C Creepage distance Standard DIP-6 7 mm Clearance distance Standard DIP-6 7 mm Creepage distance 400 mil DIP-6 8 mm Clearance distance 400 mil DIP-6 8 mm Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.4 mm i4n32-33_02 0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE = 5 V IF - LED Current (mA) N CT R C E - N or m al iz ed C TR CE VCE = 5 V IF = 10 mA TA = 25 °C Normalized to: VCE = 1 V i4n32-33_03 10010.1 0.001 0.01 0.1 1 10 IF - LED Current (mA) N I CE - N or m al iz ed I C E 10 VCE = 5 V IF = 10 mA TA = 25 °C Normalized to: VCE = 5 V VCE = 1 V www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81865 4 Rev. 1.2, 15-Feb-11 4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection Fig. 3 - Normalized Collector Base Photocurrent vs. LED Current Fig. 4 - Non-Saturated and Saturated hFE vs. Base Current Fig. 5 - Low to High Propagation Delay vs. Collector Load Resistance and LED Current Fig. 6 - High to Low Propagation Delay vs. Collector Load Resistance and LED Current Fig. 7 - Switching Waveform and Switching Schematic i4n32-33_04 0.1 1 10 100 0.001 0.01 0.1 1 10 IF = LED Current (mA) N I CB - N or m al iz ed I C B VCB = 3.5 V IF = 10 mA TA = 25 °C Normalized to: i4n32-33_05 0.01 0.1 1 10 100 0 2000 4000 6000 8000 10 000 VCE = 5 V VCE = 1 V Ib - Base Current (µA) h F E - Fo rw ar d Tr an sf er G ai n TA = 25 °C i4n32-33_06 0 10 15 20 0 20 40 60 80 TA = 25 °C, VCC = 5 V VTH = 1.5 V IF - LED Current (mA) t pL H - Lo w /H ig h Pr op ag at io n D el ay (µ s) 1 kΩ 5 220 Ω 470 Ω 100 Ω i4n32-33_07 0 10 15 20 0 5 10 15 20 IF - LED Current (mA) TA = 25 °C VCC = 5 V VTH = 1.5 V t pH L - H ig h/ Lo w Pr op ag at io n D el ay (µ s) 1 kΩ 100 Ω 5 i4n32-33_08 IF tRVO tD tS tFtPHL tPLH VTH = 1.5 V RL VCC IF VO Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.2, 15-Feb-11 5 4N32, 4N33 Optocoupler, Photodarlington Output, High Gain, with Base Connection Vishay Semiconductors PACKAGE DIMENSIONS in millimeters DIP-6 Package Dimensions PACKAGE MARKING Notes • Example marking for 4N32-X017T. • Only options 1, and 7 reflected in the package marking. • The VDE logo is only marked on option 1 parts. • Tape and reel suffix (T) is not part of the package marking. i178004 0.25 typ. 2.95 ± 0.5 3.555 ± 0.255 0.8 min. 7.62 typ. 0.85 ± 0.05 2.54 typ. 1 min. 0.5 ± 0.05 6.4 ± 0.1 8.6 ± 0.1 Pin one ID 654 123 18° 3° to 9° 7.62 to 8.81 4° typ. ISO method A 1.2 ± 0.1 Option 6 Option 7 20802-24 Option 9 10.16 typ. 7.62 typ. 8 min. 7.62 typ. 4.3 ± 0.3 0.6 min. 10.3 max. 0.7 min. 10.3 max. 7.62 typ. 8 min.0.6 min. 0.1 ± 0.1 3.6 ± 0.33.5 ± 0.3 0.1 min. 2.54 R 0.25 1.78 0.76 1.528 min. 11.05 2.54 R 0.25 1.78 0.76 1.528 min. 11.05 2.55 ± 0.25 21764-18 4N32 -X017 V YWW H 68 Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1 Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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