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TLP521-1-2,4 TLP521−1,TLP521−2,TLP521−4 2002-09-25 1 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP521−−−−1,TLP521−−−−2,TLP521−−−−4 Programmable Controllers AC/DC−Input Module Solid State Relay The TOSHIBA TLP521−1, −2 and −4 consist of a photo−tra...

TLP521-1-2,4
TLP521−1,TLP521−2,TLP521−4 2002-09-25 1 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP521−−−−1,TLP521−−−−2,TLP521−−−−4 Programmable Controllers AC/DC−Input Module Solid State Relay The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521−4 provides four isolated channels in a sixteen plastic DIP package. �� Collector−emitter voltage: 55 V (min) �� Current transfer ratio: 50% (min) Rank GB: 100% (min) �� Isolation voltage: 2500 Vrms (min) �� UL recognized made in Japan: UL1577, file No. E67349 made in Thailand: UL1577, file No. E152349 Pin Configurations (top view) 1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector TLP521-2 1 2 7 8 3 4 5 6 1, 3, 5, 7 2, 4, 6, 8 9, 11, 13, 15 10, 12, 14, 16 : Anode : Cathode : Emitter : Collector TLP521-4 5 6 11 12 7 8 9 10 1 2 15 16 3 4 13 14 TLP521-1 1 2 3 4 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector TOSHIBA 11−5B2 Weight: 0.26 g TOSHIBA 11−10C4 Weight: 0.54 g TOSHIBA 11−20A3 Weight: 1.1 g Unit in mm user 新建印章 TLP521−1,TLP521−2,TLP521−4 2002-09-25 2 Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP521�1 TLP521�2 TLP521�4 Unit Forward current IF 70 50 mA Forward current derating ∆IF /°C �0.93 (Ta ≥ 50°C) �0.5 (Ta ≥ 25°C) mA /°C Pulse forward current IFP 1 (100µ pulse, 100pps) A Reverse voltage VR 5 V LE D Junction temperature Tj 125 °C Collector�emitter voltage VCEO 55 V Emitter�collector valtage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (1 circuit Ta ≥ 25°C) ∆PC /°C �1.5 �1.0 mW /°C D et ec to r Junction temperature Tj 125 °C Storage temperature range Tstg �55~125 °C Operating temperature range Topr �55~100 °C Lead soldering temperature Tsol 260 (10 s) °C Total package power dissipation PT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT /°C �2.5 �1.5 mW /°C Isolation voltage BVS 2500 (AC, 1min., R.H.≤ 60%) (Note 1) Vrms (Note 1): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ―� 5 24 V Forward current IF ― 16 25 mA Collector current IC ―� 1 10 mA Operating temperature Topr �25 ―� 85 °C user 新建印章 TLP521−1,TLP521−2,TLP521−4 2002-09-25 3 Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°CType Classi�� fication (*1) Min Max Marking Of Classification A 50 600 Blank, Y, Y■, G, G■, B, B■, GB Rank Y 50 150 Y, Y■ Rank GR 100 300 G, G■ Rank BL 200 600 B, B■ TLP521 Rank GB 100 600 G, G■, B, B■, GB A 50 600 Blank, GR, BL, GB TLP521�2 TLP521�4 Rank GB 100 600 GR, BL, GB *1: Ex. rank GB: TLP521�1 (GB) (Note): Application type name for certification test, please use standard product type name, i.e. TLP521�1 (GB): TLP521�1, TLP521�2 (GB): TLP521�2 user 新建印章 TLP521−1,TLP521−2,TLP521−4 2002-09-25 4 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V — — 10 µA LE D Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector�emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V Emitter�collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA Collector dark current ICEO VCE = 24 V, Ta = 85°C — 2 50 µA D et ec to r Capacitance (collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn Typ. Max Unit 50 — 600 Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V Rank GB 100 — 600 % — 60 — Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB 30 — — % IC = 2.4 mA, IF = 8 mA — — 0.4 — 0.2 — Collector�emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB — — 0.4 V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) CS VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance RS VS = 500 V, R.H.≤ 60% — 1011 — Ω AC, 1 minute 2500 — — AC, 1 second, in oil — 5000 — Vrms Isolation voltage BVS DC, 1 minute, in oil — 5000 — Vdc user 新建印章 TLP521−1,TLP521−2,TLP521−4 2002-09-25 5 Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Rise time tr — 2 — Fall time tf — 3 — Turn�on time ton — 3 — Turn�off time toff VCC = 10 V IC = 2 mA RL = 100Ω — 3 — µs Turn�on time tON — 2 — Storage time ts — 15 — Turn�off time tOFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA — 25 — µs IF VCE VCC tON 4.5V 0.5V tOFF tS VCC VCE Fig.1 : SWITCHING TIME TEST CIRCUIT IF RL user 新建印章 TLP521−1,TLP521−2,TLP521−4 2002-09-25 6 Ambient temperature Ta (°C) IF – Ta Al lo w ab le fo rw ar d cu rre nt I F (m A) 100 80 -20 0 60 40 20 100 80 60 20 40 0 TLP521-1 Ambient temperature Ta (°C) IF – Ta Al lo w ab le fo rw ar d cu rre nt I F (m A) TLP521-2 TLP521-4 100 80 -20 0 60 40 20 100 80 60 20 40 0 Ambient temperature Ta (°C) PC – Ta Al lo w ab le c ol le ct or p ow er d is si pa tio n P C (m W ) 240 160 -20 0 120 80 40 100 80 60 20 40 0 200 TLP521-1 IFP – DR Al lo w ab le p ul se fo rw ar d cu rre nt I F P ( m A) Duty cycle ratio DR 3000 3 3 10-3 3 10 1000 500 30 100 50 300 10-1 10-2 3 100 Pulse width ≤ 100µs Ta = 25°C TLP521-1 PC – Ta Al lo w ab le c ol le ct or p ow er d is si pa tio n P C (m W ) 120 80 -20 0 60 40 20 100 80 60 20 40 0 100 TLP521-2 TLP521-4 Ambient temperature Ta (°C) IFP – DR Al lo w ab le p ul se fo rw ar d cu rre nt I F P ( m A) Duty cycle ratio DR 3000 3 3 10-3 3 10 1000 500 30 100 50 300 10-1 10-2 3 100 Pulse width ≤ 100µs Ta = 25°C TLP521-2 TLP521-4 user 新建印章 TLP521−1,TLP521−2,TLP521−4 2002-09-25 7 Forward voltage VF (V) IF – VF Fo rw ar d cu rre nt I F (m A) 100 50 0.4 0.3 5 0.5 30 3 1 10 0.1 0.6 0.8 1.0 1.2 1.4 1.6 Ta=25°C Fo rw ar d vo lta ge te m pe ra tu re co ef fic ie nt ∆V F/ ∆T a ( m V/ °C ) ∆VF/∆Ta – IF Forward current IF (mA) 0.1 -2.0 -2.4 -2.8 -0.4 0.3 -1.6 -1.2 -0.8 1 3 10 30 IFP – VFP Pu ls e fo rw ar d cu rre nt I F P ( m A) Pulse forward voltage VFP (V) 1000 500 0 3 50 5 300 30 10 100 1 0.4 0.8 1.2 1.6 2.0 2.4 Pulse width ≤10µs Repetitive frequency =100Hz Ta = 25°C ICEO – Ta Ambient temperature Ta (℃) 101 100 10-1 160 120 80 40 0 10-2 10-3 10-4 10V 5V VCE=24V C ol le ct or d ar k cu rre nt I C E O (µ A) Collector-emitter voltage VCE (V) C ol le ct or c ur re nt I C (m A) IC – VCE 25 1.0 0.8 0.4 0.6 0.2 20 15 10 0 0 5 1.2 1.4 Ta=25°C 50mA 10mA 20mA 5mA IF=2mA 30mA 40mA Collector-emitter voltage VCE (V) C ol le ct or c ur re nt I C (m A) IC – VCE 50mA 10mA 20mA 15mA PC(MAX.) IF=5mA 30mA 80 10 8 4 6 0 2 60 40 20 0 Ta=25°C user 新建印章 TLP521−1,TLP521−2,TLP521−4 2002-09-25 8 Ambient temperature Ta (℃) C ol le ct or c ur re nt I C (m A) IC – Ta 80 60 20 40 0 -20 0.3 0.1 100 10 5 30 100 50 IF = 0.5mA 3 1 0.5 1mA 5mA 10mA 25mA VCE = 5V IC/IF – IF C ur re nt tr an sf er ra tio I C /I F ( % ) Forward current IF (mA) Ta = 25°C VCE=5V VCE=0.4V 500 300 50 30 1 0.3 10 5 100 10 30 100 3 Sample A Sample B Ambient temperature Ta (℃) C ol le ct or -e m itt er s at ur at io n vo lta ge V C E( sa t) ( V) VCE(sat) – Ta 100 80 60 20 40 0 -20 0.20 0.16 0.12 0.08 0.04 0 IF = 5mA IC = 1mA IC – IF C ol le ct or c ur re nt I C (m A) Forward current IF (mA) 100 50 10 5 0.3 0.5 0.1 3 1 0.3 1 3 10 30 100 30 0.05 0.03 Ta = 25°C VCE=5V VCE=0.4V Sample A Sample B RL – Switching Time Sw itc hi ng ti m e ( µs ) Load resistance RL (kΩ) 1000 500 300 100 50 30 10 5 3 1 3 10 30 100 300 1 Ta = 25°C IF = 16mA VCC= 5V tON tOFF tS user 新建印章 TLP521−1,TLP521−2,TLP521−4 2002-09-25 9 �� TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. �� The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. �� Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. �� The products described in this document are subject to the foreign exchange and foreign trade laws. �� The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. �� The information contained herein is subject to change without notice. 000707EBCRESTRICTIONS ON PRODUCT USE user 新建印章
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