L I N E S C A N S E N S O R S
Teledyne DALSA
IL-P3-B Image
Sensors
Fast and sensitive, the IL-P3-B has been designed and
fabricated using the industry’s most sophisticated technology.
The IL-P3-B delivers consistently high image quality, and its
single output design reduces the cost and complexity of
support electronics.
Features
� Single output, 40 MHz data rate
� Surface gated photodiodes for low lag
� Line rate to 73 kHz (512 model)
� Low voltage clocks (<5V)
� 14 µm (H) x 14 µm (V) pixels, 100% fill factor
� 512, 1024, or 2048 pixels
� Antiblooming and exposure control
� Highly sensitive, with responsivity reaching 43 V/(µJ/cm2)
� RoHS compliant
Description
Physical Characteristics IL-P3-B
Pixel dimensions 14 µm x 14 µm
Active area 14µm x 7.2 / 14.4 / 28.7 mm
Active pixels per line 512 / 1024 / 2048
Isolation pixels per line 20
Shielded pixels per line 6
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Pin Symbol Name
1 VSS Amplifier Return
2 OS Output Signal
3 VDD Amplifier Supply
4, 11 TCK Transfer Gate
5 PR Pixel Reset Gate
6, 20 VLS Light Shield
7, 10, 14 NC No Connection
8 VPR Pixel Reset Drain, Guard Ring
9 VSTOR Pixel Storage Gate
12 VLOW Low Bias Voltage
13 VHIGH High Bias Voltage
15, 16 CR2 Readout Register, Phase 2
17, 18 CR1 Readout Register, Phase 1
19 VBB Substrate
21 CRLAST Last Register
22 VSET Output Node Set Gate
23 RST Output Reset Gate
24 VOD Output Reset Drain
Table 1. IL-P3-B Pin Functional Description
24 VOD
23 RST
22 VSET
21 CRLAST
20 VLS
19 VBB
18 CR1
17 CR1
16 CR2
15 CR2
14 NC
13 VHIGH
VSS 1
OS 2
VDD 3
TCK 4
PR 5
VLS 6
NC 7
VPR 8
VSTOR 9
NC 10
TCK 11
VLOW 12
The IL-P3-B series of linear CCD image sensors use proprietary
technology to provide a single output at 40 MHz. The series
employs buried channel CCD shift registers to maximize output
speed and reduce noise. The sensor has a dynamic range of
>1800:1 and provides output which is linear for the operating
range of light input. The IL-P3-B’s exposure control allows
integration times shorter than the readout time. Proprietary
image sensor architecture provides low image lag pixels and
high blue response.
The IL-P3-B sensor’s superior performance makes it ideally
suited for applications requiring maximum speed and high
resolution, such as:
� High performance document scanning
� Inspection
� Optical character recognition
Functional Description
The IL-P3-B sensor is composed of three main functional
groups: surface gated photodiodes in which the signal charge
packets are generated, a single CCD readout shift registers, and
an output amplifier where the charge packets are converted to
voltage pulses.
Detection
The IL-P3-B series includes sensors with 512, 1024, or 2048
pixels with active imaging area lengths of 7, 14, and 28 mm,
respectively. Photoelements are 14 µm square for a
photosensitive area of 196 µm2 and a 1:1 aspect ratio. Light
incident on these photoelements is converted into charge
packets whose size (i.e., number of electrons) is linearly
dependent on the light intensity and the integration time. The
charge is collected into a separate storage well (VSTOR)
adjacent to each photoelement. This helps to minimize image
lag, nonuniformities associated with the use of pixel reset, and
crosstalk between the photodiode and the CCD shift register.
With exposure control disabled, the integration time is the period
between successive pulses of the transfer (TCK) clock. The
integration time can be further reduced with electronic exposure
control using the pixel reset (PR) clock. The pixel reset clock
resets not the photoelements themselves but the storage well
adjacent to each photoelement. When PR is clocked, the
integration time becomes the duration between the falling edge
of the PR clock and the rising edge of the TCK clock.
When PR is clocked, the PR pulse must be damped to produce a
smooth PR pulse. If PR switches too rapidly, the uniformity of
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1 Relative position of package Pin 11
Figure 1. IL-P3-B Block Diagram
Clock Drivers Min. # Required 1
Type Speed PR 2 off PR on
Low Voltage High 2 2
Low Voltage Low 1 2
Glitch High 1 1
1. Redundant clock drivers may be required to drive the
CCD input capacitance. Refer to Figure 7 for details.
2. PR = Pixel Reset (exposure control).
Table 2. # of Clock Drivers Required
DC Biases # Required 1
Regulated? PR 2 off PR on
Yes 7 7
No 1 1
1. Refer to Figure 7 for details.
2. PR = Pixel Reset (exposure control).
Table 3. # of DC Biases Required
the OS signal will be affected by the PR clock feedthrough. A
current-drive PR clock circuit generally introduces less
feedthrough than a voltage-drive circuit.
Antiblooming is always present when biases fall within the
specified operating conditions. By adjusting VSTOR however,
the user has the added flexibility of selecting the antiblooming
level (the signal level beyond which the additional signal charge
is drained away). A higher VSTOR bias results in a higher anti-
blooming level.
Transfer
The TCK clock controls the transfer of electrons from the
storage well into the 2-phase buried-channel CCD readout
register. Transfer is from the storage wells into the CR1 phases
of the readout register. The readout register is then used to
serially shift the charge packets to the high-speed low-noise
output amplifier.
The final phase of the readout register is connected separately to
CRLAST. This provides the flexibility of timing the transfer of
signal charges to the output node. CRLAST is normally clocked
in phase with CR1, but may be delayed (see Figure 4) to shift the
sampled portion of the output video away from clock
feedthroughs.
All CR clocks operate with 50% duty cycle.
Additional details on driving the sensor are provided on Figure 7.
Output
The signal charge packets from the readout shift register are
transferred serially from the last readout gate (CRLAST), over
the set gate (VSET), to a floating sense node diffusion. The set
gate isolates the sense node diffusion from the last readout gate
and the rest of the readout shift register. As signal charges
accumulate on the floating node diffusion, the potential of this
diffusion decreases. The floating node diffusion is connected to
the input of a 2.5-stage low-noise amplifier, producing an output
signal voltage on the amplifier output (OS). The floating diffusion
is cleared of signal charge by the reset gate (RST) in preparation
for the next signal charge packet. The voltage level of the floating
diffusion after each reset is determined by the output reset drain
voltage (VOD). AC coupling the output is recommended to
eliminate the DC offset.
The output signal (OS) requires an off-chip load drawing
approximately 10mA of load current. If the load capacitance
(CLOAD) is greater than 10pF, larger load current (up to the 18mA
operating limit) may be required. As the load current increases,
the amplifier bandwidth increases. The amplifier can also drive
larger capacitive loads when the load current is larger. We
recommend however that just enough bandwidth be used since
larger bandwidth also results in increased noise.
If an off-chip current load is not available, the amplifier output
(OS) can be connected to a 1kW load resistor. The use of a
passive (resistive) load reduces the amplifier gain, resulting in
lower responsivity and saturation output signal. We do not
recommend passive loads at data rates greater than 25 MHz
because variations in DC offset will result in variations in
bandwidth.
The isolation pixels should not be used for calibration or
detection.
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Parameter Unit Min. Max.
Storage Temp °C -20 80
Operating Temp °C -20 60
Voltage on CR1, CR2, VSTOR, TCK, PR, VLS1 with
respect to VBB
V -10 18
Voltage on OS, VDD, VOD, VSS, VPR, VHIGH, CRLAST,
RST, VSET, VLOW with respect to VBB
V 0 18
Voltage on OSn with respect to VSS V VDD-8 VDD+1
Amplifier Load Current (ILOAD) mA per output 20
WARNING: Exceeding these values will void product warranty and may damage the device.
Note:
1. When VOD or VDD is biased, ensure that VLS never deviates from VBB.
Table 4. IL-P3-B Absolute Maximum Ratings
CAUTION! These devices are sensitive to damage from electrostatic
discharge (ESD). The leads should be shorted together during storage or
handling to prevent damage to the device.
Input Characteristics: Capacitance to VBB 1 Unit Typical
512 1024 2048
from CR1, CR22 pF 70 125 250
from CRLAST pF 9 9 9
from RST pF 7 7 7
from PR pF 31 53 99
from TCK pF 20 36 70
Output Characteristics:
Output Impedance (ROUT)
3 W 130W with ILOAD = 10 mA
Amplifier Supply Current (IDD)
4 mA 14mA with ILOAD = 10 mA
DC Output Offset (VOS) 5 V 8.3V with ILOAD = 10 mA
Notes:
1. Using 1V pk-pk 1MHz signal with +5V DC offset.
2. The two CR1 pins (pins 17 and 18) are internally connected, as are the two CR2 pins (pins 15 and 16).
3. In general, ROUT(W) ~ 324 * (ILOAD)-0.389, ILOAD in mA.
4. In general, IDD (mA) = 4 + ILOAD, ILOAD in mA.
5. In general, VOFFSET (V) = 0.0018 * (ILOAD)
2 - 0.17 * (ILOAD) + 9.8, ILOAD in mA.
Table 5. IL-P3-B Input/Output Characteristics
WARNING: To prevent damage to the sensor, a Schottky diode must connect
VBB and VSS. See Figure 7.
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Symbol Description Unit Min. Rec. 1 Max.
ILOAD Load current to the output (OS) mA 7.5 10.0 18.0
VDD Amplifier supply V 13.5 14.0 15.0
VOD Output reset drain V 12.0 12.5 13.0
VSET Output node set gate V 0.7 1.2 1.4
VSTOR 2, 4 Pixel storage gate V 1.6 2.0 2.2
VPR Pixel reset drain, guard ring V 13 14 15
VHIGH High bias voltage V 13 14 15
VLOW Low bias voltage V -0.5 0 15
VBB3 Substrate V -2.5 -2 -1.5
VLS Light shield V VBB
VSS3 Amplifier return V 0
Notes:
1. When deviating from the recommended biases, ensure that the new biases still meet the essential conditions on Table 8.
2. VSTOR may be adjusted to affect the antiblooming level. VSAT decreases by ~ 870mV for every 1.0V reduction in VSTOR.
3. VBB should never be forward biased with respect to VSS. To protect against damage, a Schottky diode between VBB and
VSS is recommended (see Figure 7).
4. The VSTOR operating limits are only valid for PR Low = 0V. When negative PR Low is applied, the VSTOR operating limits
should be read as the difference, (VSTOR - PR Low). The antiblooming is determined by this difference.
Table 6. IL-P3-B DC Operating Conditions
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Symbol Description Unit Min. Rec.1 Max.
CRx All CR Clocks low* V 0
swing* V 4.8 5.0 6.5
RST Reset Clock low V 0
swing V 7.0 7.0 9.0
TCK Transfer Clock low V -5.0 -3.5 -3.5
high V 4.5 5.0 6.0
PR4 Pixel Reset Clock low V -6.0 0
swing V 3.5 4.0 6.0
ƒDATA
2 Data rate MHz 5 45
ƒLINE
3 Line rate 0512 kHz 82.3
1024 42.5
2048 21.6
Notes:
1. When deviating from the recommended biases, ensure that the new biases still meet the essential conditions on Table 8.
2. The minimum data rate can be lower than 5MHz if 100x antiblooming is not required.
3. Unless the pixel is reset using the PR clock, the integration time increases as line rate decreases. Dark signal is proportional
to the integration time. The minimum line rate is determined by the maximum dark signal or the maximum dark signal shot
noise that the application can tolerate.
4. The VSTOR operating limits are only valid for PR Low = 0V. When negative PR Low is applied, the VSTOR operating limits
should be read as the difference, (VSTOR - PR Low). The antiblooming is determined by this difference.
Table 7. IL-P3-B AC Operating Conditions
Conditions If condition not satisfied, the sensor will exhibit…
CR1 high + 1 > TCK > VSTOR + 3 Larger lag
PR high > VSTOR + 1.5 High PRNU when exposure control is enabled
RST high + 5.5 > VOD Poor MTF
VOD < VDD - 1.5 Higher non-linearity
VLOW > VBB + 2 Spurious charge injection under certain power-up conditions
Table 8. IL-P3-B Essential Bias Conditions
Low
Swing
*
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Specification Unit Min. Typ. Max.
Saturation Output Voltage (VSAT)1 mV 680 800 930
rms Noise mV 0.44 0.48
Wavelength of Peak Responsivity nm 700
Peak Responsivity V/(µJ/cm2) 41.3 43.7 46.5
Dynamic Range 1420:1 1820:1 2110:1
Charge Conversion Efficiency (CCE) µV/e- 8.8 9.3 9.9
Noise Equivalent Exposure (NEE) pJ/cm2 9 10 12
Saturation Equivalent Exposure (SEE) nJ/cm2 15 18
Full Well Capacity1 ke- 73 86
Fixed Pattern Noise (FPN) 2,3 mV < 0.5 1.0
Photoresponse Non-Uniformity (PRNU) 4 % OS
8 pixel local neighborhood 3.0 6.5
Global 5.0 8.5
Charge Transfer Efficiency (CTE) (readout register) 0.99997 0.999999
First Field Lag 5 mV 3.1 4.3 5.4
Dark Signal, Integration time = 52µs mV 0.19 0.22
Notes:
1. VSTOR can be adjusted to increase VSAT and full well. As these quantities increase, the antiblooming capability is
compromised.
2. Maximum peak-to-peak variation of all outputs.
3. Due to its general purpose design, the camera and sensor evaluation hardware provides an output that cannot be used to
directly measure low FPN.
4. The peak-to-peak variation is measured at ~50% SEE.
5. Lag is measured at 500 mV. Lag is lower if signal is lower.
Test Conditions:
� Operating temperature = 35°C.
� ƒRST = data rate per output = 40MHz.
� ILOAD = 10mA.
� CLOAD = 10pF.
� Tungsten halogen light source, black body color temperature 3200K, filtered with 750nm IR cutoff filter.
� See Sensor Measurement Definitions (doc# 03-36-00149) for specification definitions.
Table 9. IL-P3-B Performance Specifications
Life Support Applications
These products are not designed for use in life suppor t appliances, devices, or systems where malfunction of these products
can reasonably be expected to result in personal injury. DALSA customers using or selling these products for use in such
applications do so at their own risk and agree to fully indemnify DALSA for any damages resulting from such improper use or
sale.
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10µW/cm
�
100µW/cm� 25µW/cm�
100
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Output vs. Integration Time
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1000800600400 500 700 900
10
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Responsivity
Figure 2. Performance Measurements
Symbol Description Unit Min. Rec. Max.
tCR Period of CRx clocks
t1 Integration time (PR disabled)
t2 Integration time (PR enabled)
t3 TCK to first valid pixel pixels 24 24
t4 Overclock pixels pixels 0 2
t5 CRLAST rising edge to CR2 falling edge ns -0.25tCR 0 0.25tCR
t6 TCK high overlap with CR1 high ns 200 200
t7 TCK falling edge to CR1 falling edge ns 2
t8 CRLAST rising to RST rising edge ns -0.25tCR 0.5tCR - t11 0.5tCR - t11
t9 RST falling edge to CRLAST falling edge ns 0 0 0.5tCR-t11
t10 RST pulse width (FWHM)
1 ns 3.5 5 0.25tCR
t11 CR rise and fall time ns 1 2 0.25tCR
Notes:
1. Full Width Half Maximum
Table 10. IL-P3-B Timing Parameters
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TCK
RST
OS
CR2
CRLAST
CR1
Line 1 Line 2
Active Pixels
Line 3
t
1
PR
t
t t
2
3 3t4
Figure 3. IL-P3-B Overall Timing
TCK
RST
CR2
CRLAST
CR1
t5
t6
t8
t9
t7
tCR
t11 t11
t10
t11 t11
OS
Overclock
Pixel
Overclock
Pixel
Isolation
Pixel
Isolation
Pixel
Figure 4. IL-P3-B Detailed Readout Register Timing
n+
n+ n+
VDD
VODRSTVSETCRLASTCR2CR2
TCK
PRVPR Pixel
VSTOR
CR1CR1
OS
VSS
Figure 5. IL-P3-B Gate Structure Diagram
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R
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Figure 6. IL-P3-B Readout Register Timing
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Figure 7. IL-P3-B Sensor Operation Connections
12 Teledyne DALSA Corp.: Phone: 519-886-6000 Fax: 519-886-8023
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1. Clock drivers are designed to drive only up to a maximum capacitance (CMAX) at a given clock frequency. If the total
capacitances of CRLAST and CR1 (see Table 5) exceed CMAX, more than one CR1 driver is required.
2. Clock drivers are designed to drive only up to a maximum capacitance (CMAX) at a given clock frequency. If the total
capacitances of CR2 (see Table 5) exceed CMAX, more than one CR2 driver is required.
3. Each pin should be connected to a clock driver, though not necessarily to the same clock driver. If more than one clock
driver is used, it is acceptable to drive each pin from separate drivers.
4. Need to source IDD = 4 + ILOAD mA.
5. May have an optional antiblooming level adjustment.
Notes to Figure 7.
ISO 9001 Teledyne DALSA maintains a registered quality system meeting the ISO 9001 standard.
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Figure 8. IL-P3-B Package Dimensions*
20
*Note: 2048 mechanical shown. Sensor mechanicals for the 1k and 512 resolutions available on request.
14 Teledyne DALSA Co
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