TPCA8048-H

TPCA8048-H 2009-07-02 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCA8048-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 19 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 4.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 118 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 35 Drain current Pulsed (Note 1) IDP 105 A Drain power dissipation (Tc = 25℃) PD 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 88 mJ Avalanche current IAR 35 A Repetitive avalanche energy (Tc = 25℃) (Note 4) EAR 2.46 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 8 5 1 4 0. 6 ± 0 .1 4.25 ± 0.2 0. 8 ± 0 .1 3. 5 ± 0 .2 1. 1 ± 0 .2 0. 16 6 ± 0 .0 5 0. 95 ± 0. 05 5.0 ± 0.2 S S 0.05 A 0.595 0.4 ± 0.1 6. 0 ± 0 .3 5. 0 ± 0 .2 1 4 0.15 ± 0.05 8 5 1.27 A 0.05 M JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN TPCA8048-H 2009-07-02 2 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc = 25℃) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 35 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ※ Part number TPCA 8048-H * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) Lot No. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) TPCA8048-H 2009-07-02 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 45 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1.0 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 18 A ⎯ 4.8 7.1 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 18 A ⎯ 4.3 6.6 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 18 A 59 118 ⎯ S Input capacitance Ciss ⎯ 5800 7540 Reverse transfer capacitance Crss ⎯ 210 315 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 650 ⎯ pF Gate resistance rg VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1.0 1.5 Ω Rise time tr ⎯ 3.6 ⎯ Turn-on time ton ⎯ 13 ⎯ Fall time tf ⎯ 7.3 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 66 ⎯ ns VDD ≈ 48 V, VGS = 10 V, ID = 35 A ⎯ 90 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 48 V, VGS = 5 V, ID = 35 A ⎯ 46 ⎯ Gate-source charge 1 Qgs1 ⎯ 16 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 12 ⎯ Gate switch charge QSW VDD ≈ 48 V, VGS = 10 V, ID = 35 A ⎯ 19 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 105 A Forward voltage (diode) VDSF IDR = 35 A, VGS = 0 V ⎯ ⎯ −1.2 V R L = 1 .6 7Ω VDD ≈ 30 V 0 V VGS 10 V 4. 7 Ω ID = 18 A VOUT TPCA8048-H 2009-07-02 4 1 0.1 10 100 100 10 VGS = 4.5 V 10 1 10 100 0.1 1 25 100 Ta = −55°C 100 1 1000 10 0.1 0 0.3 0.5 0 ID = 35 A 2 4 6 8 9 18 0.2 10 0.4 0.1 0 0 1 2 3 5 80 Ta = −55°C 25 100 40 4 60 20 ID – VDS 2 0 0.8 VGS = 2.5 V 1.6 1.2 0.4 2.7 3 2.8 2.6 10 4.5 3.8 2.9 3.2 3.4 100 60 40 0 80 20 6 ID – VDS 0 0.2 0.4 0.6 0.8 VGS = 2.4 V 2.5 2.8 10 1 4.5 2.6 2.7 3 3.6 2.9 3.2 6 50 30 20 0 40 10 Drain-source voltage VDS (V) D ra in c ur re nt I D (A ) Drain current ID (A) RDS (ON) – ID D ra in -s ou rc e O N -r es is ta nc e R D S (O N ) ( m Ω) Drain current ID (A) ⎪Yfs⎪ – ID Fo rw ar d tra ns fe r a dm itt an ce |Y fs | ( S ) Drain-source voltage VDS (V) D ra in c ur re nt I D (A ) Gate-source voltage VGS (V) ID – VGS D ra in c ur re nt I D (A ) D ra in -s ou rc e vo lta ge V D S ( V ) Gate-source voltage VGS (V) VDS – VGS Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test TPCA8048-H 2009-07-02 5 0 160 VDD = 48 V VDS = 48 V 12 24 80 12 4 16 0 40 120 8 20 12 24 50 30 20 0 40 10 0 0.5 1.5 −80 −40 0 40 80 120 160 2.5 1.0 2.0 10 0.1 100 1000 10000 1 10 100 Ciss Coss Crss 0 0.1 −0.2 1000 −0.6 −0.8 −1.2 VGS = 0 V 10 4.5 2 3 −0.4 10 100 1 1 −1.0 160 −40 0 40 80 120 −80 0 VGS = 10 V 6 VGS = 4.5 V 12 ID = 9, 18, 35 A 8 2 ID = 9, 18, 35 A 10 4 Drain-source voltage VDS (V) Capacitance – VDS C ap ac ita nc e C (p F) Drain-source voltage VDS (V) IDR – VDS D ra in re ve rs e cu rr en t I D R (A ) G at e th re sh ol d vo lta ge V th (V ) Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) RDS (ON) – Ta D ra in -s ou rc e O N -re si st an ce R D S (O N ) ( m Ω) Total gate charge Qg (nC) D ra in -s ou rc e vo lta ge V D S ( V ) Dynamic input/output characteristics G at e- so ur ce v ol ta ge V G S (V ) Common source Ta = 25°C Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = 10 V ID = 1 mA Pulse test Common source Pulse test Common source ID = 35 A Ta = 25°C Pulse test TPCA8048-H 2009-07-02 6 t =1 ms* VDSS max t =10 ms* 10 100 1000 0.1 10 1 1 100 0.01 0.1 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 (2) (1) (3) 0.1 3.0 2.0 0 1.5 2.5 1.0 0.5 0 40 80 120 160 (1) (2) Tr an si en t t he rm al im pe da nc e r th (° C /W ) Pulse width tw (s) rth – tw (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25℃ Single - pulse D ra in c ur re nt I D (A ) Drain-source voltage VDS (V) Safe operating area ID max (Pulse) * * Single-pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. Case temperature TC (°C) PD – Tc D ra in p ow er d is si pa tio n P D (W ) Ambient temperature Ta (°C) PD – Ta D ra in p ow er d is si pa tio n P D (W ) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s 50 30 20 10 0 0 40 80 120 160 40 TPCA8048-H 2009-07-02 7 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) Circuit Configuration Absolute Maximum Ratings (Ta  25°C) Thermal Characteristics Marking (Note 5) Electrical Characteristics (Ta  25°C) Source-Drain Ratings and Characteristics (Ta ( 25°C) RESTRICTIONS ON PRODUCT USE