IRFZ44

IRFZ44N HEXFET® Power MOSFET 01/03/01 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.5 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 55V RDS(on) = 17.5mΩ ID = 49A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description PD - 94053 Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A IDM Pulsed Drain Current  160 PD @TC = 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 25 A EAR Repetitive Avalanche Energy 9.4 mJ dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) IRFZ44N 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V „ trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A Qrr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs „ ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 49 160 A ‚ Starting TJ = 25°C, L = 0.48mH RG = 25Ω, IAS = 25A. (See Figure 12)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: ƒ ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A „ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 25A„ ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 63 ID = 25A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 60 ––– ID = 25A td(off) Turn-Off Delay Time ––– 44 ––– RG = 12Ω tf Fall Time ––– 45 ––– VGS = 10V, See Fig. 10 „ Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1470 ––– VGS = 0V Coss Output Capacitance ––– 360 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy‚ ––– 530… 150† mJ IAS = 25A, L = 0.47mH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current IRFZ44N www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) DS D 4.5V 1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 175 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) DS D 4.5V 1 10 100 1000 4 5 6 7 8 9 10 11 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) GS D T = 25 CJ ° T = 175 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) R , D ra in -to -S ou rc e O n Re sis ta nc e (N orm ali ze d) J D S( on ) ° V = I = GS D 10V 49A IRFZ44N 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 0 500 1000 1500 2000 2500 V , Drain-to-Source Voltage (V) C, C ap ac ita nc e (pF ) DS V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss 0 10 20 30 40 50 60 70 0 4 8 12 16 20 Q , Total Gate Charge (nC) V , G at e- to -S ou rc e Vo lta ge (V ) G G S I =D 25A V = 11VDS V = 27VDS V = 44VDS 0.1 1 10 100 1000 0.0 0.6 1.2 1.8 2.4 V ,Source-to-Drain Voltage (V) I , R ev er se D ra in C ur re nt (A ) SD SD V = 0 V GS T = 25 CJ ° T = 175 CJ ° 1 10 100 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 I D , Dr ai n- to -S ou rc e Cu rre nt (A ) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec IRFZ44N www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 T , Case Temperature ( C) I , D ra in C ur re nt (A ) °C D VDS 90% 10% VGS td(on) tr td(off) tf VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. VGS + -VDD Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) Th er m al R es po ns e (Z ) 1 th JC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) IRFZ44N 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - VGS Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR )D SS IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current R G IA S 0 .01Ωtp D .U .T LVD S + - VD D D R IV E R A 1 5V 20V 25 50 75 100 125 150 175 0 60 120 180 240 300 Starting T , Junction Temperature ( C) E , Si ng le P ul se A va la nc he E ne rg y (m J) J AS ° ID TOP BOTTOM 10A 18A 25A IRFZ44N www.irf.com 7 Peak Diode Recovery dv/dt Test Circuit P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W.Period + - + + +- - - ƒ „ ‚ RG VDD • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer  * Reverse Polarity of D.U.T for P-Channel VGS [ ] [ ] *** VGS = 5.0V for Logic Level and 3V Drive Devices [ ] *** Fig 14. For N-channel HEXFET® power MOSFETs IRFZ44N 8 www.irf.com L E A D A S S IG NM E NT S 1 - G A T E 2 - D R A IN 3 - S O U RC E 4 - D R A IN - B - 1 .32 (.05 2) 1 .22 (.04 8) 3 X 0.55 (.02 2)0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 4.69 ( .18 5 ) 4.20 ( .16 5 ) 3X 0.93 (.03 7)0.69 (.02 7) 4.06 (.16 0) 3.55 (.14 0) 1.15 (.04 5) M IN 6.47 (.25 5) 6.10 (.24 0) 3 .7 8 (.149 ) 3 .5 4 (.139 ) - A - 10 .54 (.4 15) 10 .29 (.4 05)2.87 (.11 3) 2.62 (.10 3) 1 5.24 (.60 0) 1 4.84 (.58 4) 1 4.09 (.55 5) 1 3.47 (.53 0) 3 X 1 .4 0 (.0 55 )1 .1 5 (.0 45 ) 2.54 (.10 0) 2 X 0 .3 6 (.01 4) M B A M 4 1 2 3 N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB Package Outline TO-220AB Dimensions are shown in millimeters (inches) PA R T N U M B ERIN TE R N A TIO N A L R E C TIF IER L O G O E XA MP L E : TH IS IS AN IR F1 0 1 0 W IT H AS SE M B L Y L O T C O D E 9 B1 M A S SE M BL Y L O T C O D E D ATE C O D E (YYW W ) YY = YE AR W W = W E EK 9 2 4 6 IR F 10 1 0 9B 1 M A Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/01