IRFP250

IRFP250N HEXFET® Power MOSFET 10/09/00 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current  120 PD @TC = 25°C Power Dissipation 214 W Linear Derating Factor 1.4 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy‚ 315 mJ IAR Avalanche Current 30 A EAR Repetitive Avalanche Energy 21 mJ dv/dt Peak Diode Recovery dv/dt ƒ 8.6 V/ns TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.7 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance www.irf.com 1 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Description VDSS = 200V RDS(on) = 0.075Ω ID = 30A S D G l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements TO-247AC PD - 94008 IRFP250N 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ trr Reverse Recovery Time ––– 186 279 ns TJ = 25°C, IF = 18A Qrr Reverse Recovery Charge ––– 1.3 2.0 µC di/dt = 100A/µs „ ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 30 120 A ‚ Starting TJ = 25°C, L = 1.9mH RG = 25Ω, IAS = 18A. (See Figure 12)  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Notes: ƒ ISD ≤ 18A, di/dt ≤ 374A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 18A „ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 18A „ ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 123 ID = 18A Qgs Gate-to-Source Charge ––– ––– 21 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 57 VGS = 10V, See Fig. 6 and 13 „ td(on) Turn-On Delay Time ––– 14 ––– VDD = 100V tr Rise Time ––– 43 ––– ID = 18A td(off) Turn-Off Delay Time ––– 41 ––– RG = 3.9Ω tf Fall Time ––– 33 ––– RD = 5.5Ω, See Fig. 10 „ Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 2159 ––– VGS = 0V Coss Output Capacitance ––– 315 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 83 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current IRFP250N www.irf.com 3 0.01 0.1 1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) DS D 4.5V 0.1 1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 175 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) DS D 4.5V Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 V = 50V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) GS D T = 25 CJ ° T = 175 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T , Junction Temperature( C) R , D ra in -to -S ou rc e O n Re sis ta nc e (N orm ali ze d) J D S( on ) ° V = I = GS D 10V 30A Fig 4. Normalized On-Resistance Vs. Temperature IRFP250N 4 www.irf.com Fig 7. Typical Source-Drain Diode Forward Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1 10 100 1000 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C° °J C V , Drain-to-Source Voltage (V) I , D ra in C ur re nt (A ) I , D ra in C ur re nt (A ) DS D 10us 100us 1ms 10ms Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 5000 C, C ap ac ita nc e(p F) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 100 0 4 8 12 16 Q , Total Gate Charge (nC) V , G at e- to -S ou rc e Vo lta ge (V ) G G S I =D 18A V = 40VDS V = 100VDS V = 160VDS 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V ,Source-to-Drain Voltage (V) I , R ev er se D ra in C ur re nt (A ) SD SD V = 0 V GS T = 25 CJ ° T = 175 CJ ° IRFP250N www.irf.com 5 RD Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % VGS RG D.U.T. 10V + - 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 T , Case Temperature ( C) I , D ra in C ur re nt (A ) °C D Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % VGS RG D.U.T. 10V VDD 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 T , Case Temperature ( C) I , D ra in C ur re nt (A ) °C D 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) Th er m al R es po ns e( Z ) 1 th JC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) IRFP250N 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - 10 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (B R )D S S IA S Fig 12c. Maximum Avalanche Energy Vs. Drain Current R G IA S 0 .01Ωtp D .U .T LV D S + - VD D D R IV E R A 15V 20V 25 50 75 100 125 150 175 0 200 400 600 800 Starting T , Junction Temperature ( C) E , Si ng le P ul se A va la nc he E ne rg y (m J) J AS ° ID TOP BOTTOM 7.3A 13A 18A IRFP250N www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W.Period + - + + +- - - Fig 14. For N-Channel HEXFETS * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit ƒ „ ‚ RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer  * IRFP250N 8 www.irf.com Part Marking Information TO-247AC Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 IN TER N A TION A L R E CTIF IE R LO G O A S SE M B L Y L OT CO D E E XAM P LE : TH IS IS A N IRF P E30 W ITH A SS E M B LY L O T C O D E 3 A 1Q P A R T N U M B ER D A TE C O D E (YYW W ) YY = YE A R W W W EE K 3A 1Q 93 02 IRFP E 30 A LE A D A S S IG N M E N TS NO TE S : - D - 5 .30 (.209 ) 4 .70 (.185 ) 2 .50 (.089) 1 .50 (.059) 4 3X 0 .80 (.031) 0 .40 (.016) 2.60 (.102) 2.20 (.087)3 .40 (.133 ) 3 .00 (.118 ) 3X 0 .25 (.010 ) M C A S 4.30 (.170 ) 3 .70 (.145 ) - C - 2X 5.50 (.217)4.50 (.177) 5 .50 (.217) 0.25 (.010) 1 .40 (.056 ) 1 .00 (.039 ) 3.65 (.143 ) 3.55 (.140 ) DM MB - A - 15.90 (.626) 15.30 (.602) - B - 1 2 3 20 .30 (.800) 19 .70 (.775) 14.80 (.583 ) 14.20 (.559 ) 2 .40 (.094) 2 .00 (.079) 2X 2X 5.45 (.215) 1 D IM E N S IO NING & TO LE R A N CING P E R A N S I Y 14.5M , 1982. 2 CO N TR O LLIN G D IM E N S IO N : IN CH . 3 CO N F O RM S TO JE D E C O U TLINE TO -247-A C . 1 - G A TE 2 - DR A IN 3 - S O UR C E 4 - DR A IN