IRFP150

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Case-to-Sink Junction-to-Ambient R JC R CS R JA /W Characteristic Max. UnitsSymbol Typ. FEATURES Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (TC=25 ) Continuous Drain Current (TC=100 ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Value UnitsSymbol IDM VGS EAS IAR EAR dv/dt ID PD TJ , TSTG TL A V mJ A mJ V/ns W W/ A VDSS V TO-3P 1.Gate 2. Drain 3. Source 3 2 1 m W O1 O2 O3 OC OC O1 O1 OC OC OC OC OC q q q IRFP150A BVDSS = 100 V RDS(on) = 0.04 ID = 43 A 100 43 30.4 170 740 43 19.3 6.5 193 1.28 - 55 to +175 300 0.78 -- 40 -- 0.24 -- W 20 +_ ©1999 Fairchild Semiconductor Corporation Rev. B N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse CharacteristicSymbol Max. UnitsTyp.Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS BV/ TJ VGS(th) RDS(on) IGSS IDSS V V/ V nA A pF ns nC -- -- -- -- -- -- -- -- -- -- -- -- -- VGS=0V,ID=250 A ID=250 A See Fig 7 VDS=5V,ID=250 A VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 VGS=10V,ID=21.5A VDS=40V,ID=21.5A VDD=50V,ID=40A, RG=6.2 See Fig 13 VDS=80V,VGS=10V, ID=40A See Fig 6 & Fig 12 Drain-to-Source Leakage Current VGS=0V,VDS=25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISM VSD trr Qrr CharacteristicSymbol Max. UnitsTyp.Min. Test Condition -- -- -- -- -- A V ns C Integral reverse pn-diode in the MOSFET TJ=25 ,IS=43A,VGS=0V TJ=25 ,IF=40A diF/dt=100A/ s D D OC W W m O4 O5 OC m m OC O4 O4 O4 W OC m OC O5O4 m m O4 O1 IRFP150A 100 -- 2.0 -- -- -- -- -- 0.11 -- -- -- -- -- 420 185 17 20 80 45 75 13.2 34.8 -- -- 4.0 100 -100 10 100 0.04 -- 2270 485 215 50 50 160 100 97 -- -- 28.34 1750 -- -- -- 135 0.65 43 170 1.6 -- -- Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=0.6mH, IAS=43A, VDD=25V, RG=27 , Starting TJ =25 ISD 40A, di/dt 470A/ s, VDD BVDSS , Starting TJ =25 Pulse Test : Pulse Width = 250 s, Duty Cycle 2% Essentially Independent of Operating Temperature <_ <_<_ <_ O1 O2 O3 O4 O5 W oC oCm m N-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current IRFP150A 10-1 100 101 100 101 102 @ Notes : 1. 250 ms Pulse Test 2. TC = 25 oC VGS Top : 1 5 V 1 0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V I D , D ra in C ur re nt [A ] VDS , Drain-Source Voltage [V] 2 4 6 8 10 100 101 102 25 oC 175 oC - 55 oC @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 ms Pulse Test I D , D ra in C ur re nt [A ] VGS , Gate-Source Voltage [V] 0 25 50 75 100 125 150 175 0.00 0.01 0.02 0.03 0.04 0.05 0.06 @ Note : TJ = 25 oC VGS = 20 V VGS = 10 V R D S( on ) , [ W ] Dr ai n- So ur ce O n- Re si st an ce ID , Drain Current [A] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 100 101 102 175 oC 25 oC @ Notes : 1. VGS = 0 V 2. 250 ms Pulse TestI DR , R ev er se D ra in C ur re nt [A ] VSD , Source-Drain Voltage [V] 100 101 0 1000 2000 3000 Ciss= Cgs+ Cgd (Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss C oss C iss Ca pa ci ta nc e [ pF ] VDS , Drain-Source Voltage [V] 0 10 20 30 40 50 60 70 80 0 5 10 VDS = 80 V VDS = 50 V VDS = 20 V @ Notes : ID =40.0 AV G S , Ga te -S ou rc e Vo lt ag e [ V] QG , Total Gate Charge [nC] N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area PDM t1 t2 IRFP150A -75 -50 -25 0 25 50 75 100 125 150 175 200 0.8 0.9 1.0 1.1 1.2 @ Notes : 1. VGS = 0 V 2. ID = 250 mA BV DS S , (N or ma li ze d) Dr ai n- So ur ce B re ak do wn V ol ta ge TJ , Junction Temperature [ oC] -75 -50 -25 0 25 50 75 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 @ Notes : 1. VGS = 10 V 2. ID = 20.0 A R D S( on ) , (N or ma li ze d) Dr ai n- So ur ce O n- Re si st an ce TJ , Junction Temperature [ oC] 100 101 102 10-1 100 101 102 103 10 ms DC 100 ms 1 ms 10 ms @ Notes : 1. TC = 25 oC 2. TJ = 175 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) I D , D ra in C ur re nt [A ] VDS , Drain-Source Voltage [V] 25 50 75 100 125 150 175 0 10 20 30 40 50 I D , D ra in C ur re nt [A ] Tc , Case Temperature [ oC] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. Z qJ C(t)=0.78 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZqJ C(t) Z q JC (t ) , T he rm al R es po ns e t1 , Square Wave Pulse Duration [sec] N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS2----2 1 -------------------- BVDSS -- VDD BVDSS Vin Vout 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd Vary tp to obtain required peak ID 10V VDDC LL VDS ID RG t p DUT BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG 3mA VGS Current Sampling (I G) Resistor Current Sampling (I D) Resistor DUT VDS 300nF 50K 200nF12V Same Type as DUT “ Current Regulator ” R1 R2 W IRFP150A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + -- L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” VDD 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period -------------------------- IRFP150A TRADEMARKS ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 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This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. UHC™ VCX™