75N75

UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2005 Unisonic Technologies Co., Ltd. QW-R502-097,A 75Amps, 75Volts N-CHANNEL POWER MOSTFET „ DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. „ FEATURES * RDS(ON) = 12.5mΩ @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 1 TO-252 TO- 2511 1 1 TO-220F *Pb-free plating product number: 75N75L „ ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 75N75-TA3-T 75N75L-TA3-T TO-220 G D S Tube 75N75-TF3-T 75N75L-TF3-T TO-220F G D S Tube 75N75-TM3-T 75N75L-TM3-T TO-251 G D S Tube 75N75-TN3-R 75N75L-TN3-R TO-252 G D S Tape Reel 75N75-TN3-T 75N75L-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 75N75L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating, Blank: Pb/Sn 75N75 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw QW-R502-097,A „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 75 V TC = 25℃ 75 A Continuous Drain Current TC = 100℃ ID 56 A Drain Current Pulsed (Note 1) IDM 300 A Gate to Source Voltage VGS ±20 V Single Pulsed (Note 2) EAS 900 mJ Avalanche Energy Repetitive (Note 1) EAR 300 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25℃ 220 W Total Power Dissipation Derating above 25℃ PD 1.4 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance Junction-Ambient θJA 62.5 ℃/W Thermal Resistance Junction-Case θJC 0.8 ℃/W Thermal Resistance Case-Sink θCS 0.5 ℃/W „ ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 75 V Breakdown Voltage Temperature Coefficient BV△ DSS/△TJ ID = 1mA, Referenced to 25℃ 0.08 V/℃ VDS = 75 V, VGS = 0 V 20 µA Drain-Source Leakage Current IDSS VDS = 75 V, VGS = 0 V, TJ = 150℃ 250 µA Gate-Source Leakage Current VGS = 20V, VDS = 0 V 100 nA Gate-Source Leakage Reverse IGSS VGS = -20V, VDS = 0 V -100 nA On Characteristics Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 48 A 12.5 15 mΩ Dynamic Characteristics Input Capacitance CISS 3300 pF Output Capacitance COSS 530 pF Reverse Transfer Capacitance CRSS VGS = 0 V, VDS = 25 V f = 1MHz 80 pF Switching Characteristics Turn-On Delay Time tD(ON) 12 ns Rise Time tR 79 ns Turn-Off Delay Time tD(OFF) 80 ns Fall Time tF VDD = 38V, ID =48A, VGS=10V, (Note 4, 5) 52 ns Total Gate Charge QG 90 140 nC Gate-Source Charge QGS 20 35 nC Gate-Drain Charge (Miller Charge) QGD VDS = 60V, VGS = 10 V ID = 48A, (Note 4, 5) 30 45 nC 75N75 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-097,A „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source-Drain Diode Ratings and Characteristics Continuous Source Current IS 75 Pulsed Source Current ISM 300 A Diode Forward Voltage VSD IS = 48A, VGS = 0 V 1.4 V Reverse Recovery Time trr 90 ns Reverse Recovery Charge Qrr IS = 48A, VGS = 0 V dIF / dt = 100 A/µs 300 µC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. 75N75 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw QW-R502-097,A „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG - VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. Period D=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) - + VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit Fig. 1B Peak Diode Recovery dv/dt Waveforms 75N75 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw QW-R502-097,A „ TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON) tR tD(OFF) tFPulse Width ≤ 1μs Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 50kΩ 0.3μF DUT VDS Same Type as D.U.T. 10V0.2μF 12V Charge QGS QGD QG VGS 1mA VG Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform D.U.T. RD 10V VDS L VDD tp IAS tp Time BVDSS Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms 75N75 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R502-097,A „ TYPICAL CHARACTERISTICS 102 101 100 10110-1 100 Drain-Source Voltage, VDS (V) D ra in C ur re nt , I D (A ) On-State Characteristics 102 101 100 2 Gate-Source Voltage, VGS (V) D ra in C ur re nt , I D (A ) Transfer Characteristics 4 6 8 103 5 7 9 V GS Top: 15V 10 V 8 V 7 V 6 V 5 .5V 5V Bottorm : 4.5V 4.5V Note: 1. VDS=25V 2. 20µs Pulse Test 15 0℃ 25 ℃ 11 0D ra in -S ou rc e O n- R es is ta nc e, R D S( O N) (m Ω ) Drain Current, ID (A) 30 70 80 12 13 14 15 On-Resistance Variation vs. Drain Current and Gate Voltage 102 101 100 0.2 Source-Drain Voltage, VSD (V) R ev er se D ra in C ur re nt , I SD (A ) Reverse Drain Current vs. Allowable Case Temperature 1.60.4 0.6 0.8 1.0 1.2 1.410 50 100 *Note: 1. VGS=0V 2. 250µs Test 25℃ 150℃ VGS=10V 20 40 60 90 4000 0 5 Drain-Source Voltage, VDC (V) C ap ac ita nc e (p F ) Capacitance Characteristics (Non-Repetitive) 1000 2000 10 0 G at e- to -S ou rc e V ol ta ge , V G S (V ) Total Gate Charge, QG (nC) 5 15 20 25 8 10 12 Gate Charge Characteristics 10 6 4 2 0 25 6000 CISS COSS 3000 5000 15 20 30 35 *Note: 1. VGS=0V 2. f = 1MHzCRSS 30 35 40 45 VDS=60V VDS=38V *Note: ID=48A CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD 75N75 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-097,A „ TYPICAL CHARACTERISTICS(Cont.) -100 D ra in -S ou rc e B re ak do w n V ol ta ge , B V D SS (N or m al iz ed ) Junction Temperature, TJ (℃) -50 50 200 *Note: 1. VGS=0V 2. ID=250µA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 0 1.1 1.0 0.9 0.8 D ra in -S ou rc e O n- R es is ta nc e, R D S( O N) , (N or m al iz ed ) -100 50 100 150 3.0 On-Resistance Variation vs. Junction Temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature, TJ (℃) *Note: 1. VGS=10V 2. ID=3.5A -50 200 10 1 0.1 Drain-Source Voltage, VD (V) D ra in C ur re nt , I D ,(A ) Maximum Safe Operating 1 100 D ra in C ur re nt , I D (A ) Case Temperature, TC (℃) 75 100 150 70 Maximum Drain Current vs. Case Temperature 0 1255025 20 50 10 100 1000 DC Operation in This Area by RDS(ON) *Note: 1. Tc=25℃ 2. TJ=150℃ 3.Single Pulse 10ms 1ms 100µs 10 30 40 60 0.01 Square Wave Pulse Duration, t1 (sec) Th er m al R es po ns e, Z θ JC (t) 11E-5 1 0.1 0.1 10 0.01 Transient Thermal Response Curve 0.02 0.1 0.2 1E-4 1E-3 0.01 *Note: 1. ZθJC (t) = 0.88℃/W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC=PDM×ZθJC (t) Single pulse D=0.5 0.05 75N75 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R502-097,A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.