首页 DIFF Process Introduction

DIFF Process Introduction

举报
开通vip

DIFF Process IntroductionnullnullFurnace IntroductionnullContentDiffusion Process Over view: Furnace (Hardware) configuration AP/LP Process Application: Monitor Items:nullDiffusion Process Over viewnullHDPOX -- Pad-ox, Sac-ox,Zero-OX HDFOX – Zero-ox, Well-drive-in, Field-ox, ...

DIFF Process Introduction
nullnullFurnace IntroductionnullContentDiffusion Process Over view: Furnace (Hardware) configuration AP/LP Process Application: Monitor Items:nullDiffusion Process Over viewnullHDPOX -- Pad-ox, Sac-ox,Zero-OX HDFOX – Zero-ox, Well-drive-in, Field-ox, Trench-lining-ox HDGOX -- Gate-ox HDANN-- Anneal HDALY -- Alloy HDPMC -- Polyimide-curing HDBPF-- Flow/Reflow  AP Furnace: LP Furnace: HDDPY -Dope-poly/Rugged-poly, HDUPY-Flat-poly, HDSIN - Thick-SiN, HDTSN- Thin-SiN, HDTEOS -TEOS, HTO, Diffusion Process Over viewnullFurnace Hardware configurationnullOperation panel - This is the operation panel of the system controller.  Gas flow chart panel - This panel indicates the paths of the gases and the locations of their valves.  Heater chamber - Generates heat required for the process.   Carrier I/O port(SMIF) - Loads and unloads the wafer carriers placed on it by an operator.  Carrier transfer - Transports a wafer carrier between the carrier I/0 port and the carrier stage, and between the carrier stage and the transfer stage. Furnace Hardware configurationnullCarrier stage - The carrier stages are used to store the wafer carriers. Transfer stage - This unit is to lock the wafer carrier in place so as the wafer transfer mechanism can transfer wafers to and from the wafer carrier.  Wafer transfer - This unit is to transfer the wafers between the wafer carrier on the transfer stage and the boat. This is basically a robot with 5-fork assembly.  Boat elevator - It is to insert and withdraw the boat to/from the process tube. For LPCVD furnaces it also provide the boat rotary mechanism, which is to rotate the boat during process to improve the uniformity of the deposited film. Furnace Hardware configurationnullAuto-shutter - Closes the furnace mouth when the boat is fully out of the process tube, to prevent the heat from the furnace heating up the loading area. External torch unitFurnace Hardware configurationnullSINFurnace Hardware configurationnull Wafer on Boat Type SD: Top/BTM Monitor wafer: 3pics ED: Product :100pcs-120pcs Furnace Hardware configurationnullOxidation Kinetics: Reaction Formula  Si + O2 SiO2 Dry Oxide (Temp: 700~1200oC)  Si + 2H2O SiO2 + 2H2 Wet Oxide (Temp: 700~1200oC) Linear-Parabolic Model (>300A) Xo2 + AXo= B (t+) Xo / (A/2)=[ 1 + (t+)/(A2/4B) ]1/2 -1 Case 1. (t+) << A2/4B Xo = B (t+) /A ( Linear-short t/L T)) Case 2. t >> A2/4B Xo2 = B t ( Parabolic-long t,H T)) AP Process ApplicationnullPurpose of Oxide 1) Used as a mask against ion implantation and diffusion2) Isolation of individual devicesAP Process ApplicationnullUsed as gate oxide and capacitor dielectric in MOS devices 4) Used as Tunneling oxide in EEPROM AP Process ApplicationnullZero-ox:  Application: - Pre-process for Alignment/Laser mark  Purpose: - Prevent PR direct contact with silicon - make particle (from laser mark) easy removed Well-drive-in:  Application: - P-Well, N-Well formation  Purpose: - Drive in dopant (P, B) at high temperature to form P, N-WellAP Process ApplicationnullPad-ox:  Application: - Buffer layer  Purpose: - Cushion the transition of stresses between silicon substrate and Si3N4 interface due to the different thermal expansion coefficient AP Process ApplicationnullField-ox:  Application: - LOCOS (Local Oxidation of Silicon)  Purpose: - Isolation of integrated circuits Trench-lining-ox:  Purpose: - Buffer oxideAP Process Applicationnull Sac-ox:  Application: - Sacrificial-ox grown before gate-ox  Purpose: - Eliminate the defects caused by Kooi Effect - Prevent silicon surface contamination by Vt-imp, or PR. - Increase scattering for Vt-imp Wsix Anneal:  Purpose: - Transform Wsix from tetragonal to hexagonal (W-rich) for reducing the resistivity AP Process ApplicationnullGate-ox:  Purpose: - Gate dielectric  Breakdown Strength: - 11~14 MV/cm (1.1~1.4 V/10A)  Oxide Charge: - Fixed oxide charge, Qf - Mobile ionic charge, Qm - Interface trapped charge, Qit - Oxide trapped charge, Qd AP Process ApplicationnullPre-S/D-ox:  Purpose: - Screen oxide for preventing channel effect Alloying:  Purpose: - Diffuse in the H to react with Si dangling bonds on gate-ox and silicon substrate interface for GOI concern. Polyimide-curing:  Purpose: - Drive out the solvent in polyimide Flow/Reflow:  Purpose: - ILD Planarization AP Process ApplicationnullFTP-WVG-LPAP Process ApplicationnullTo ExhaustVV1VV2MVSVPumping lineN2NH3DCSMainfoldOuter TubeInner TubeColdTrapBoatT/CPedestal InjectorSSVSVP.SW1IV2Pumping line moduleExhaust line moduleGas line moduleExhaust lineLP Process ApplicationnullLPCVD Thick SiN3SiH2Cl2 + 4NH3 Si3H4 + 6 HCl + 6H2 NH3+HCL---- NH4Cl(by –product)  Reaction Formula: Reaction Temperature: 650oC, 760oC, 780oC Reaction Pressure: 0.2 Torr Reaction Gas: SiH2Cl2 ,NH3  Application: - OD-defined, Spacer/LinerLP Process ApplicationnullLPCVD Thin SiN3SiH2Cl2 + 4NH3 Si3H4 + 6 HCl + 6H2 HCL+NH3 NH4CL (by-product) Reaction Formula: Reaction Temperature: 650degC, Reaction Pressure: 0.2 TorrReaction Gas : SiH2Cl2 , NH3 Application: - ONO Capacitance, Composite SpacerLP Process ApplicationnullLPCVD TEOSSi(OC2H5)4 SiO2 + By-product TetraEthylOrthoSilicate Reaction Formula: Reaction Temperature: 650oC, 680oC Reaction Pressure: 0.3-0.4 Torr Reaction Gas : Si(OC2H5)4 ,N2, O2 Application: - Hard Mask, Spacer/LinerLP Process ApplicationnullLPCVD HTO (SiH2Cl2 Base)SiH2Cl2 + 2N2O SiO2 + 2HCl + 2N2 Reaction Formula: Reaction Temperature: 800oC Reaction Pressure: 0.18 Torr Reaction Gas : SiH2Cl2 : N2O Application: - SpacerLP Process ApplicationnullLPCVD FLAT-POLYSiH4 Si(poly) + 2H2 Reaction Formula: Reaction Temperature: 620oC Reaction Pressure: 0.11 Torr, 0.2 Torr Reaction Gas Flow: SiH4(B) : SiH4(C) :SiH4(T)  Application: - Gate electrode, Resistor, ConductorLP Process ApplicationnullLPCVD AMORPHOUS SISiH4 Si(amorphous) + 2H2 Reaction Formula: Reaction Temperature: 545oC, 550oC Reaction Pressure: 0.085 Torr Reaction Gas Flow: SiH4(B) : SiH4(C) :SiH4(T)  Application: - Gate electrodeAA Spacer 540C APY950ALP Process ApplicationnullLPCVD DOPE-POLYSiH4 Si(Dope-poly) + 2H2 PH3 Reaction Formula: Reaction Temperature: 530oC, 540oC Reaction Pressure: 1 Torr, 0.375 Torr Reaction Gas Flow: SiH4 PH3(B) :PH3(C) :PH3(T) = depend on recipe Application: - Gate electrode, ConductorLP Process ApplicationnullGate Poly ( P1) 800+/-80A (530C, 8.0E20)POLY4 DEP( P4) 720+/-60A, 530C, 1.14E21RUGGED POLY( P1) 570C, 530+/-60A Reflectivity: 0.43+/-0.05BOTTOM PLATE POLY DEP 300+/-30A, 530C, 1.14E21Plug Poly ( P2) 3000+/-300A (Q time: 8 hrs) 530C, 3E20TOP OXIDATION 800C, CW THK: 200+/-20ACAPACITOR SIN DEP (Q time: 4 hrs) FTP furance, 650C, 49+/-4ALP Process ApplicationnullLP Process ApplicationnullDielectric layer (thickness = d)Dielectric layer (thickness = d)STISTIDielectric layer (thickness = d)STISTInon-selective P3 Poly deposition (dope-poly tube) resist coat P3 CMP HSG formation (selective HSG tube) PH3 anneal (dope-poly tube) P3 Poly deposition(In-situ HSG tube) HSG formation (seeding/anneal) PH3 anneal resist coating Poly CMP LP Process ApplicationSelective approachnullLP FURNACE SOG-curing/Baking  Purpose: - Drive out the solvent in SOG or DIW absorbed in Via  Process Temperature: 420oC, 300oC  Process Pressure: 0.25 Torr  Process Gas Flow: N2 = 200sccm or 500sccm LP Process ApplicationnullMonitor Items Particle: - Frequency: AP furnace: 1 time/ week (TLC-PRG) (ADGOX furnace: 2 times/week) LP furnace: every run - Tool: Excite  Thickness: (Furnace) or RI: - Frequency: every run of recipe with thickness - Tool: OP3290; Rudolph S200; KT F5X P concentration: - Frequency: Dope-poly/Rugged poly every run - Tool: XRF/OP3290nullMonitor Items Gate -ox DL/LT, Fe concentration, Qsc: - Frequency: Gate-oxide / twice per week(TLC-PRG) Oxide furnace / weekly - Tool: SDI FAaST230  Gate -ox Vbd,TDDB: - Frequency: Gate-oxide / weekly (short loop) Oxide furnace / New EQ - Tool: Reliability Lab tool
本文档为【DIFF Process Introduction】,请使用软件OFFICE或WPS软件打开。作品中的文字与图均可以修改和编辑, 图片更改请在作品中右键图片并更换,文字修改请直接点击文字进行修改,也可以新增和删除文档中的内容。
该文档来自用户分享,如有侵权行为请发邮件ishare@vip.sina.com联系网站客服,我们会及时删除。
[版权声明] 本站所有资料为用户分享产生,若发现您的权利被侵害,请联系客服邮件isharekefu@iask.cn,我们尽快处理。
本作品所展示的图片、画像、字体、音乐的版权可能需版权方额外授权,请谨慎使用。
网站提供的党政主题相关内容(国旗、国徽、党徽..)目的在于配合国家政策宣传,仅限个人学习分享使用,禁止用于任何广告和商用目的。
下载需要: 免费 已有0 人下载
最新资料
资料动态
专题动态
is_252460
暂无简介~
格式:ppt
大小:1MB
软件:PowerPoint
页数:0
分类:互联网
上传时间:2011-10-23
浏览量:48