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74HC138.pdf

74HC138.pdf

上传者: pagingli 2011-10-10 评分 0 0 0 0 0 0 暂无简介 简介 举报

简介:本文档为《74HC138pdf》,可适用于IT/计算机领域,主题内容包含SemiconductorComponentsIndustries,LLC,March,–RevPublicationOrderNumber:MCH符等。

SemiconductorComponentsIndustries,LLC,March,–RevPublicationOrderNumber:MCHCADHigh–PerformanceSilicon–GateCMOSTheMCHCAisidenticalinpinouttotheLSThedeviceinputsarecompatiblewithstandardCMOSoutputswithpullupresistors,theyarecompatiblewithLSTTLoutputsTheHCAdecodesathree–bitAddresstoone–of–eightactive–lowoutputsThisdevicefeaturesthreeChipSelectinputs,twoactive–lowandoneactive–hightofacilitatethedemultiplexing,cascading,andchip–selectingfunctionsThedemultiplexingfunctionisaccomplishedbyusingtheAddressinputstoselectthedesireddeviceoutputoneoftheChipSelectsisusedasadatainputwhiletheotherChipSelectsareheldintheiractivestates•OutputDriveCapability:LSTTLLoads•OutputsDirectlyInterfacetoCMOS,NMOSandTTL•OperatingVoltageRange:toV•LowInputCurrent:µA•HighNoiseImmunityCharacteristicofCMOSDevices•InCompliancewiththeRequirementsDefinedbyJEDECStandardNoA•ChipComplexity:FETsorEquivalentGatesLOGICDIAGRAMYYYYYYYYCSCSAAAACTIVE–LOWOUTPUTSADDRESSINPUTSCSCHIP–SELECTINPUTSPIN=VCCPIN=GNDInputsOutputsCSCSCSAAAYYYYYYYYXXHXXXHHHHHHHHXHXXXXHHHHHHHHLXXXXXHHHHHHHHHLLLLLLHHHHHHHHLLLLHHLHHHHHHHLLLHLHHLHHHHHHLLLHHHHHLHHHHHLLHLLHHHHLHHHHLLHLHHHHHHLHHHLLHHLHHHHHHLHHLLHHHHHHHHHHLFUNCTIONTABLEH=highlevel(steadystate)L=lowlevel(steadystate)X=don’tcareSO–DSUFFIXCASEBhttp:onsemicomTSSOP–DTSUFFIXCASEFPDIP–NSUFFIXCASEMARKINGDIAGRAMSMCHCANAWLYYWWHCAAWLYWWA=AssemblyLocationWL=WaferLotYY=YearWW=WorkWeekHCAALYWDevicePackageShippingORDERINGINFORMATIONMCHCANPDIP–BoxMCHCADSOIC–RailMCHCADRSOIC–ReelMCHCADTTSSOP–RailMCHCADTRTSSOP–ReelPINASSIGNMENTACSAAYCSCSGNDYYYYVCCYYYMCHCAhttp:onsemicomÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUMRATINGS*ÎÎÎÎÎÎÎÎSymbolÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameterÎÎÎÎÎÎÎÎÎÎValueÎÎÎÎÎÎUnitÎÎÎÎÎÎÎÎVCCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCSupplyVoltage(ReferencedtoGND)ÎÎÎÎÎÎÎÎÎΖtoÎÎÎÎÎÎVÎÎÎÎÎÎÎÎVinÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCInputVoltage(ReferencedtoGND)ÎÎÎÎÎÎÎÎÎΖtoVCCÎÎÎÎÎÎVÎÎÎÎÎÎÎÎVoutÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCOutputVoltage(ReferencedtoGND)ÎÎÎÎÎÎÎÎÎΖtoVCCÎÎÎÎÎÎVÎÎÎÎÎÎÎÎIinÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCInputCurrent,perPinÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎmAÎÎÎÎÎÎÎÎIoutÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCOutputCurrent,perPinÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎmAÎÎÎÎÎÎÎÎICCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCSupplyCurrent,VCCandGNDPinsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎmAÎÎÎÎÎÎÎÎÎÎÎÎPDÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPowerDissipationinStillAir,PlasticDIP†SOICPackage†TSSOPPackage†ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎmWÎÎÎÎÎÎÎÎTstgÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorageTemperatureÎÎÎÎÎÎÎÎÎΖtoÎÎÎÎÎÎCÎÎÎÎÎÎÎÎÎÎÎÎTLÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeadTemperature,mmfromCaseforSeconds(PlasticDIP,SOICorTSSOPPackage)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎC*MaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccurFunctionaloperationshouldberestrictedtotheRecommendedOperatingConditions†DeratingPlasticDIP:–mWCfromtoCSOICPackage:–mWCfromtoCTSSOPPackage:–WCfromtoCForhighfrequencyorheavyloadconsiderations,seeChapteroftheONSemiconductorHigh–SpeedCMOSDataBook(DLD)RECOMMENDEDOPERATINGCONDITIONSÎÎÎÎÎÎÎÎSymbolÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameterÎÎÎÎÎÎMinÎÎÎÎMaxÎÎÎÎÎÎUnitÎÎÎÎÎÎÎÎVCCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCSupplyVoltage(ReferencedtoGND)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVÎÎÎÎÎÎÎÎVin,VoutÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDCInputVoltage,OutputVoltage(ReferencedtoGND)ÎÎÎÎÎÎÎÎÎÎVCCÎÎÎÎÎÎVÎÎÎÎÎÎÎÎTAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperatingTemperature,AllPackageTypesÎÎÎÎÎΖÎÎÎÎÎÎÎÎÎÎCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtr,tfÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInputRiseandFallTimeVCC=V(Figure)VCC=VVCC=VÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnsDCELECTRICALCHARACTERISTICS(VoltagesReferencedtoGND)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎGuaranteedLimitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbolÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameterÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTestConditionsÎÎÎÎÎÎÎÎÎÎÎÎVCCVÎÎÎÎÎÎÎÎÎÎÎΖCtoCÎÎÎÎÎÎÎÎÎCÎÎÎÎÎÎÎÎÎÎÎÎCÎÎÎÎÎÎÎÎÎUnitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIHÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMinimumHigh–LevelInputVoltageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout=VorVCC–V|Iout|µAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVILÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumLow–LevelInputVoltageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout=VorVCC–V|Iout|µAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOHÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMinimumHigh–LevelOutputVoltageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin=VIHorVIL|Iout|µAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin=VIHorVIL|Iout|mA|Iout|mA|Iout|mAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThisdevicecontainsprotectioncircuitrytoguardagainstdamageduetohighstaticvoltagesorelectricfieldsHowever,precautionsmustbetakentoavoidapplicationsofanyvoltagehigherthanmaximumratedvoltagestothishigh–impedancecircuitForproperoperation,VinandVoutshouldbeconstrainedtotherangeGND(VinorVout)VCCUnusedinputsmustalwaysbetiedtoanappropriatelogicvoltagelevel(eg,eitherGNDorVCC)UnusedoutputsmustbeleftopenMCHCAhttp:onsemicomDCELECTRICALCHARACTERISTICS(VoltagesReferencedtoGND)ÎÎÎÎÎÎUnitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎGuaranteedLimitÎÎÎÎÎÎÎÎVCCVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTestConditionsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameterÎÎÎÎÎÎÎÎSymbolÎÎÎÎÎÎUnitÎÎÎÎÎÎÎÎCÎÎÎÎÎÎCÎÎÎÎÎÎÎΖCtoCÎÎÎÎÎÎÎÎVCCVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTestConditionsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameterÎÎÎÎÎÎÎÎSymbolÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOLÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumLow–LevelOutputVoltageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin=VIHorVIL|Iout|µAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin=VIHorVIL|Iout|mA|Iout|mA|Iout|mAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIinÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumInputLeakageCurrentÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin=VCCorGNDÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎεAÎÎÎÎÎÎÎÎÎÎÎÎICCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumQuiescentSupplyCurrent(perPackage)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin=VCCorGNDIout=µAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎεANOTE:InformationontypicalparametricvaluescanbefoundinChapteroftheONSemiconductorHigh–SpeedCMOSDataBook(DLD)ACELECTRICALCHARACTERISTICS(CL=pF,Inputtr=tf=ns)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎGuaranteedLimitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbolÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎParameterÎÎÎÎÎÎÎÎÎÎÎÎVCCVÎÎÎÎÎÎÎÎÎÎÎΖCtoCÎÎÎÎÎÎÎÎÎCÎÎÎÎÎÎÎÎÎÎÎÎCÎÎÎÎÎÎÎÎÎUnitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH,tPHLÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumPropagationDelay,InputAtoOutputY(Figuresand)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH,tPHLÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumPropagationDelay,CStoOutputY(Figuresand)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH,tPHLÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumPropagationDelay,CSorCStoOutputY(Figuresand)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtTLH,tTHLÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumOutputTransitionTime,AnyOutput(Figuresand)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnsÎÎÎÎÎÎÎÎÎÎCinÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximumInputCapacitanceÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎpFNOTE:ForpropagationdelayswithloadsotherthanpF,andinformationontypicalparametricvalues,seeChapteroftheONSemiconductorHigh–SpeedCMOSDataBook(DLD)TypicalC,VCC=VCPDPowerDissipationCapacitance(PerPackage)*pF*Usedtodeterminetheno–loaddynamicpowerconsumption:PD=CPDVCCfICCVCCForloadconsiderations,seeChapteroftheONSemiconductorHigh–SpeedCMOSDataBook(DLD)MCHCAhttp:onsemicomFiguretPHLtPLHVCCGNDFigureVALIDVALIDOUTPUTYtftrVCCGNDtPLHtTLHOUTPUTYINPUTCStPHLtTHLINPUTASWITCHINGWAVEFORMStTHLtTLHVCCGNDtrtPHLtPLHOUTPUTYINPUTCS,CSFiguretf*IncludesallprobeandjigcapacitanceFigureTestCircuitCL*TESTPOINTDEVICEUNDERTESTOUTPUTPINDESCRIPTIONSADDRESSINPUTSA,A,A(Pins,,)AddressinputsTheseinputs,whenthechipisselected,determinewhichoftheeightoutputsisactive–lowCONTROLINPUTSCS,CS,CS(Pins,,)ChipselectinputsForCSatahighlevelandCS,CSatalowlevel,thechipisselectedandtheoutputsfollowtheAddressinputsForanyothercombinationofCS,CS,andCS,theoutputsareatalogichighOUTPUTSY–Y(Pins,,,,,,,)Active–lowDecodedoutputsTheseoutputsassumealowlevelwhenaddressedandthechipisselectedTheseoutputsremainhighwhennotaddressedorthechipisnotselectedMCHCAhttp:onsemicomAAACSCSCSYYYYYYYYEXPANDEDLOGICDIAGRAMMCHCAhttp:onsemicomPACKAGEDIMENSIONSPDIP–NSUFFIXCASE–ISSUERMINMINMAXMAXINCHESMILLIMETERSDIMABCDFGHJKLMSNOTES:DIMENSIONINGANDTOLERANCINGPERANSIYM,CONTROLLINGDIMENSION:INCHDIMENSIONLTOCENTEROFLEADSWHENFORMEDPARALLELDIMENSIONBDOESNOTINCLUDEMOLDFLASHROUNDEDCORNERSOPTIONALBSCBSCBSCBSC–A–BFHGDPLSC–T–SEATINGPLANEKJMLTA()MM()TBAMSSMINMINMAXMAXMILLIMETERSINCHESDIMABCDFGJKMPRBSCBSCNOTES:DIMENSIONINGANDTOLERANCINGPERANSIYM,CONTROLLINGDIMENSION:MILLIMETERDIMENSIONSAANDBDONOTINCLUDEMOLDPROTRUSIONMAXIMUMMOLDPROTRUSION()PERSIDEDIMENSIONDDOESNOTINCLUDEDAMBARPROTRUSIONALLOWABLEDAMBARPROTRUSIONSHALLBE()TOTALINEXCESSOFTHEDDIMENSIONATMAXIMUMMATERIALCONDITION–A––B–DPLKCG–T–SEATINGPLANERXMJFPPL()BMMSOIC–DSUFFIXCASEB–ISSUEJMCHCAhttp:onsemicomPACKAGEDIMENSIONSTSSOP–DTSUFFIXCASEF–ISSUEOÇÇÇÇÇÇDIMMINMAXMINMAXINCHESMILLIMETERSABC––––––DFGBSCBSCHJJKKLBSCBSCMNOTES:DIMENSIONINGANDTOLERANCINGPERANSIYM,CONTROLLINGDIMENSION:MILLIMETERDIMENSIONADOESNOTINCLUDEMOLDFLASHPROTRUSIONSORGATEBURRSMOLDFLASHORGATEBURRSSHALLNOTEXCEED()PERSIDEDIMENSIONBDOESNOTINCLUDEINTERLEADFLASHORPROTRUSIONINTERLEADFLASHORPROTRUSIONSHALLNOTEXCEED()PERSIDEDIMENSIONKDOESNOTINCLUDEDAMBARPROTRUSIONALLOWABLEDAMBARPROTRUSIONSHALLBE()TOTALINEXCESSOFTHEKDIMENSIONATMAXIMUMMATERIALCONDITIONTERMINALNUMBERSARESHOWNFORREFERENCEONLYDIMENSIONAANDBARETOBEDETERMINEDATDATUMPLANE–W–SECTIONN–NSEATINGPLANEIDENTPINDETAILEJJBCDAKKHGÉÉÉÉÉÉDETAILEFMLXL–U–SU()TSU()TSUM()VST()–T––V––W–()XREFKNNMCHCAhttp:onsemicomONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLC(SCILLC)SCI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